MOS fabr ication pr ocess

• nMOS
• CMOS for logic
• BiCMOS for I/O and driver circuit
nMOS fabr ication
Summar y of an nMOS pr ocess

Depletion mode only

SiO 2
 Mask Layout
L-Edit layout program
 Technology Setup
• Setup > Technology > MOSIS: Orbit 2U SCNA
 CIF Layer s
• Setup > CIF
 CIF Layer Names
CMOS Poly Gate (CPF) Poly (Poly1)
CMOS Electr ode (CPS) (Poly2)
CMOS Active Ar ea Active (Thinox=n-diff + tr ansistor channel)
CMOS Metal Fir st Metal 1

CMOS Metal Second Metal 2

CMOS Well N-diff N well
CMOS Select N N select
CMOS Select P P select
CMOS Contact Poly Poly contact
CMOS Contact Electr ode Poly2 contact
CMOS Contact Active Active contact
CMOS Via Via

CMOS Over glass Over glass

 Enhancement Mode NMOS Mask Layout
(1) Use Layout program (L-Edit) to draw 6 masks of an enhancement mode nMOS
process by using L-edit and Orbit 2µm double metal, double poly, CMOS technology.

4λ
10λ
4λ

20λ

2λ
2λ

4λ 4λ 4λ 4λ
28λ
Mask #1- CAA

Use CAA (CMOS Active Ar ea) layer to dr aw a

W=28 H=20 r ectangular and define the n-diffusion
+tr ansistor channel.

4λ
4λ

20λ

2λ
2λ

4λ 4λ 4λ 4λ
28λ
Mask #2- CPG

Use CPG (CMOS Poly Gate) layer to dr aw a

W=4 H=24 and a W=8 H=8 r ectangular s and
define the poly gate.

4λ
10λ
4λ

20λ

2λ
2λ

4λ 4λ 4λ 4λ
28λ
Mask #2 again for n +-diffusion (CSN)

Use CSN (CMOS select N) to dr aw a W=32 H=24

r ectangular for you to select the n-diffusion r egion
within CAA, but not pr otected by CPG.

4λ
10λ
4λ

20λ

2λ
2λ

4λ 4λ 4λ 4λ
28λ
Cr oss-Section
Mask #3- CCP & CCA

CCP

CCA CCA

Use CCP (CMOS Contact Poly) and CCA (CMOS

Contact Active) to dr aw 5 W=4 H=4 r ectangular to
open the poly contacts thr ough thick OX

4λ
10λ
4λ

20λ

2λ
2λ

4λ 4λ 4λ 4λ
28λ
Cr oss Section after Mask #3
Mask #4 - CMF

CMF

Use CMF to dr aw metal lines to contact Poly and

n-diffusion thr ough CCP and CCA open ar eas.

4λ
10λ
4λ

20λ

2λ
2λ

4λ 4λ 4λ 4λ
28λ
Cr oss Section after Mask #4
 Mask #5 – Via layer

CVA
Use CVA to dr aw 3 W=4, H=4 via openings thr ough OX.
Mask #6 – Over galss Opening

COG
Use COG to dr aw 3 W=4, H=4 via openings thr ough Over glass
(demo pur pose, violate design r ules).
 Summar y of nMOS Layer s

COG
CVA
Over glass
Metal (CMF)
OX
Poly1(CPG)
OX
n +- diffusion n +- diffusion
Thin OX

P-doped Si wafer