Beruflich Dokumente
Kultur Dokumente
R IR = IDS
IR = (VCC - Vout) / R
Vout = VDS
Vin IDS
1
MOSFET IV Characteristics
Load Line
2
Voltage Transfer Characteristics
3
CMOS Inverter
IDn
V in = V DD -VGSp
IDn = - IDp
V out = VDD -VDSp
Vout
V in=3 Vin=3
VGSp=-5
Vin = VDD -VGSp Vout = VDD -VDSp
IDn = - IDp
4
CMOS Inverter Load Characteristics
In,p
V in = 0 Vin = 5
NMOS
PMOS
5
Finding CMOS VTC--1
6
Finding CMOS VTC--3
CMOS VTC
7
CMOS VTC--Spice Results
NMOS sat
PMOS lin
4
NMOS sat
3
PMOS sat
2
NMOS lin
PMOS sat NMOS lin
1
PMOS off
1 2 3 4 5 V in
8
DIGITAL GATES
Fundamental Parameters
l Functionality
l Reliability, Robustness
l Area
l Performance
» Speed (delay)
» Power Consumption
» Energy
VDD
v(t)
i(t)
(a) Inductive coupling (b) Capacitive coupling (c) Power and ground
noise
9
DC Operation:
Voltage Transfer Characteristic
V(y)
V(x) V(y)
V f
OH
V(y)=V(x)
V Switching Threshold
M
VOL
VOL V V(x)
OH
V V(y)
"1" OH Slope = -1
V V
IH OH
Undefined
Region
Slope = -1
V
IL VOL
"0"
V
OL V V V(x)
IL IH
10
Definition of Noise Margins
"1"
V
OH
NMH
V
Noise Margin High IH
Undefined
Region
Noise Margin Low
NML V
IL
V
OL
"0"
...
v0 v1 v2 v3 v4 v5 v6
f(v) finv(v)
finv(v) f(v)
11
The Ideal Gate
Vout
Ri = ∞
Ro = 0
g= −∞
Vin
5.0
4.0 NML
3.0
Vout (V)
2.0
VM
NMH
1.0
12
Derivation of Switching Threshold
3.0
VM
2.0
13
Derivation of Vih and Vil
14