MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR3AM OUTLINE DRAWING Dimensions

in mm
10 MAX 0.5

3.2±0.2
φ3.2±0.1
TYPE NAME

23.7±0.5
VOLTAGE
CLASS ∗

8 MAX
1.2±0.1
0.8

4 MAX
12 MIN
0.8

0.5
1.5 MIN
2.5 2.5

4.5 MAX
123 ∗ Measurement point of
case temperature

1.55±0.1
10 MAX
24
1 T1 TERMINAL
2 T2 TERMINAL
• IT (RMS) ........................................................................ 3A 3 GATE TERMINAL
34
• VDRM ..............................................................400V/600V 1
T2 TERMINAL

• IFGT !, IRGT !, IRGT # ......................... 30mA (15mA) ✽6 TO-202

APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control, other general
purpose control applications

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
8 12
VDRM Repetitive peak off-state voltage ✽1 400 600 V
VDSM Non-repetitive peak off-state voltage ✽1 500 720 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc =86°C 3 A
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 30 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 3.7 A2s
current

PGM Peak gate power dissipation 3 W

PG (AV) Average gate power dissipation 0.3 W
VGM Peak gate voltage 6 V
IGM Peak gate current 0.5 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 1.6 g
✽1. Gate open.

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA
VTM On-state voltage Tc=25°C, ITM=4.5A, Instantaneous measurement — — 1.5 V
VFGT ! ! — — 1.5 V
VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 1.5 V
VRGT # # — — 1.5 V
IFGT ! ! — — 30 ✽6 mA
IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 30 ✽6 mA
IRGT # # — — 30 ✽6 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
Rth (j-c) Thermal resistance Junction to case ✽4 ✽5 — — 10 °C/ W

Critical-rate of rise of off-state — —

(dv/dt)c ✽3 V/µs
commutating voltage

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽5. The contact thermal resistance Rth (c-f) in case of greasing is 3°C/W.
✽6. High sensitivity (IGT≤15mA) is also available. (IGT item 1)

Voltage VDRM (dv/dt) c Commutating voltage and current waveforms

class (V) Test conditions (inductive load)
Min. Unit

SUPPLY
1. Junction temperature
8 400 VOLTAGE TIME
Tj=125°C

2. Rate of decay of on-state commutating current MAIN CURRENT (di/dt)c

5 V/µs (di/dt)c=–1.5A/ms TIME
3. Peak off-state voltage MAIN
VD=400V VOLTAGE TIME
12 600
(dv/dt)c VD

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

102 40
7 TC = 25°C
SURGE ON-STATE CURRENT (A)

5 35
ON-STATE CURRENT (A)

3
2 30
101
7 25
5
3 20
2
15
100
7
5 10
3
2 5

10–1 0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
102 103
7 7 TYPICAL EXAMPLE
5
5
3 4
2 PGM = 3W IRGT III
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

3

GATE TRIGGER CURRENT (Tj = t°C)

101 PG(AV) = 0.3W
2
7
5
IGM = 102
3 VGT 0.5A
2 IFGT I, IRGT I
7
100 5
7 4
5 3
3 IRGT I 2
2
IFGT I, IRGT III VGD = 0.2V
10–1 101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

GATE TRIGGER VOLTAGE VS. IMPEDANCE CHARACTERISTICS
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 102
7 TYPICAL EXAMPLE 7 JUNCTION TO AMBIENT
5
5
4 3
2
GATE TRIGGER VOLTAGE (Tj = 25°C)

3
GATE TRIGGER VOLTAGE (Tj = t°C)

2 101
7 JUNCTION TO CASE
5
102 3
7 2
5 100
4 7
3 5
2 3
2
101 10–1
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER ALLOWABLE CASE TEMPERATURE

DISSIPATION VS. RMS ON-STATE CURRENT
5.0 130
ON-STATE POWER DISSIPATION (W)

CURVES APPLY REGARDLESS

4.5 120 OF CONDUCTION ANGLE
CASE TEMPERATURE (°C)

4.0 110
360°
3.5 CONDUCTION 100
3.0 RESISTIVE, 90
INDUCTIVE
2.5 LOADS 80
2.0 70
1.5 60 360°
CONDUCTION
1.0 50 RESISTIVE,
0.5 40 INDUCTIVE
LOADS
0 30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT VS. RMS ON-STATE CURRENT
130 160
NATURAL CONVECTION NATURAL CONVECTION
120 ALL FINS ARE BLACK PAINTED NO FINS
AMBIENT TEMPERATURE (°C)

AMBIENT TEMPERATURE (°C)

140
110 IRON AND GREASED CURVES APPLY REGARDLESS
CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE
100 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE
90 RESISTIVE, INDUCTIVE 100 LOADS
LOADS
80 80
70 60
60
40
50 50 50 t1.2
40 20
30 30 t1.2
30 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE

100 (%)

CURRENT VS. JUNCTION HOLDING CURRENT VS.

TEMPERATURE JUNCTION TEMPERATURE
105 103
100 (%)

7 TYPICAL EXAMPLE TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)

5 7
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

5
3 4
2
3
HOLDING CURRENT (Tj = 25°C)

104
HOLDING CURRENT (Tj = t°C)

2
7
5
3 102
2 7
103 5
7 4
5 3
3 2
2
102 101
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

LACHING CURRENT VS. BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 160
100 (%)

7 TYPICAL EXAMPLE
5 + – 140
T2 , G

,,,,,,,,,,,
LACHING CURRENT (mA)

3 DISTRIBUTION TYPICAL

,,,,,,,,,,,
2 120
EXAMPLE
BREAKOVER VOLTAGE (Tj = 25°C)

,,,,,,,,,,,
102
BREAKOVER VOLTAGE (Tj = t°C)

7 100
5
3 ,,,,,,,,,,,
,,,,,,,,,,,
80

,,,,,,,,,,,
2
60

,,,,,,,,,,,
101

,,,,,,,,,,,
7
5 40
3
2 ,,,,,,,,,,,
 T2+, G+ TYPICAL
 – –
 T2 , G EXAMPLE
20

100 0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS
100 (%)

CRITICAL RATE OF RISE OF OFF-STATE

160 102 VOLTAGE WAVEFORM
TYPICAL EXAMPLE Tj = 125°C TYPICAL

COMMUTATING VOLTAGE (V/µs)

7 t
140 EXAMPLE
5 (dv/dt)C VD Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )

4
120 3 CURRENT WAVEFORM IT = 4A
IT (di/dt)C τ = 500µs
2
100 τ t VD = 200V
f = 3Hz
80 101
7 I QUADRANT
60 5
4
40 III QUADRANT
III QUADRANT 3
MINIMUM
20 2 CHARAC-
I QUADRANT TERISTICS
VALUE
0 100 0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10 2 3 4 5 7 101 2 3 4 5 7 102

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CURRENT VS. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

GATE CURRENT PULSE WIDTH
103 6Ω 6Ω
100 (%)

7 TYPICAL EXAMPLE
5 IRGT III
4 A A
3 IRGT I 6V 6V
GATE TRIGGER CURRENT (DC)

RG RG
GATE TRIGGER CURRENT (tw)

2 IFGT I V V

102 TEST PROCEDURE 1 TEST PROCEDURE 2

7
5 6Ω
4
3
2
A
6V
V RG
101 0
10 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3

Feb.1999