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G E SOLID STATE

3875081 G E SOLID STATE

Unllunctlon Transistors and Switches _

2N6027, 2N6028, GES6027, GES6028

Programmable Unijunction Transistor

Features:

• Planar Passivated Structure

• Low Leakage Current

• Low Peak Point Current

• Low Forward Voltage

• Fast, High Energy Trigger Pulse

• Programmable II

• Programmable RBB

• Programmable Ip

• programmable Iv

• Low Cost

II

T0-92

T0-98

The GE/RCA 2N6027, 2N6028 and GES6027, GES6028 PUTS are PNP three-terminal planar passivated devices available in the standard plastic TO-S8 and TO-92 packages. The terminals are designated as anode, anode gate and cathode.

The devices have been characterized as Programmable Un ijunction Transistors (PUn. offering many advantages over conventional unijunction transistors. The designer can select R1 and R2 to program unljunction characteristics such as II. RBB• Ip and lv to meet his particular needs.

PUTs are specifically characterized for long interval timers and other applications requiring low leakage and low peak point current. PUTs similar types have been characterized for general use wheren the low peak paint current of the 2N6028 and others is not essential. Applications of the PUT include timers. high gain phase control circuits and relaxation oscillators.

Operation of the PUT as a unijunction is easily understood. Figure 1 (a) shows a basic unijunction circuit. Figure 2(a) shows identically the same circuit except that the unljunctlon transistor Is replaced by the PUT plus resistors R1 and R2. Comparing the equivalent circuits of Figure 1(b)and 2(b), it Is seen that both circuits have a diode connected to a voltage divider. When this diode becomes forward biased In the uni-

Applications:

• SCRTrlgger

• Pulse and Timing

Circuits

• Oscillators

• Sensing Circuits

• Sweep Circuits

junction transistor. Rl becomes strongly modulated to a lower resistance value. This generates a negative resistance characteristic between the emitter E and base one (B1. For the PUT, the resistors Rl and Rz control the voltage at which Ihe diode (anode to gate) becomes forward biased. After the diode conducts. the regeneration Inherent In a PNPN device causes the PUT to switch on. This generates a negative resistance characteristic from anode to cathode (Figure 2(b) simulating the modulation of Rl for a conventional unijunctlon,

Resistors RB2 and RBI (Figure 1 (a)) are generally unnecessary when the PUT replaces a conventional UJT. This Is illustrated in Figure 2(0). Resistor RBl is often used to bypass the interbase current of the unijunction which would otherwise trigger the SCR. Since R 1 in the case of the PUT, can be returned directly to ground there is not current to bypass at the SCR gate. Resistor Rsz is used for temperature compensation and for limiting the dissipation In the UJT during capacitor discharge. Sinea R2 (Figure 2) is not modulated. Razcan be absorbed into it.

Thase types are supplied in JEDEC TO-S2 package (GES6027, GES6028) and in JEDEC TO-98 package (2N6027,2N6028).

Devicas In TO-98 package are supplied with and without seating flange (see Dimensional Outline).

122 ___

File Number 2050

G E SOLID STATE

3875081 G E SOLID STATE

01

DEI3875081 0018019 8 T

01E 18019

D

______________________ UnlJunction Transistors and Switches

2N6027, 2N6028, GES6027, GES6028 T'2S·o'l.

MAXIMUM RATINGS, Absolute·Maximum Values:

GATE·CATHODEFORWARDVOLlAGE' , .. , , , ;, " •. , .

GATE·CATHODE REVERSE VOLTAGE' , . , • , , •• ,

GATE·ANODE REVERSE VOLTAGE' , , ...• ,

ANODE·CATHODEVOLTAGE' •• " .

DCANODECURRENT' (Note 1) ., ,., ••.•• ,"', ,., , , ••..•. , ..

PEAKANODE,RECURRENTFORWARD

(1001's pulse width, 1% duty cycle) .

(20I'S pulse width, 1 % duty cycle)' •. , ••.• , •. , •••• , ...••..• , .•.•.....••••..•.•..•..•..•.•..•.•••• , •..

PEAK ANODE, NON· RECURRENT FORWARD (1 Ol'sec) ...•••.•.. , , • , .

GATE CURRENT' . , • , , . , •..•• , . , . , , , , , .•••.. , •• , .. , , , .. , ..•. , •.••.••••.••..•.•..•.•.••..•.•••• , ••.

CAPACITIVE DISCHARGE ENERGY (Note 2) ••.•••..•....•..•..•.•..•..•..•.•.....•.....•••..•..•••.••. DISSIPATION (Total Average Power)(Note 1) .......•.••.•....•.....•..................................•.

OPERATING AMBIENT TEMPERATURE RANGE (Note 1) , .. , .

+100V -100V +100V :l:l00V

150mA

lA 2A 5A

±20mA 250l'J 300mW -50· to + 100·e

* In accordance with JEDEC reglstretion data format. NOTES:

1. Derate currents and powers 1 %I·C above 25·C.

2. E = 112 CV2 capacitor discharge energy with no current limiting

~ ~

ELECTRICAL CHARACTERISTICS, At AmbIent Temperature (TAl = 25'C Unless Otherwise Specified

LIMITS
CHARACTERiSTICS SYMBOL 2N6027 2N6028 UNITS
GES6027 GES6028
MIN. MAX. MIN. MAX
Forward Voltage' (IF - 50mA) VF - 1.5 - 1.5
Pulse Output Voltage' Vo 6 - 6 -
OlfsetVoltage'(Vs = 10V) VT V
Ra- MC 0.2 1.6 0.2 t.6
RG = tOke 0.2 0.6 0.2 0.6
Peak Current' (VS = 10 V) Ip
Ra = 1 MC - 2 - 0.15
Rr. = 10ke - 5 - t
Valley Current' (Vs - 10V) Iv !lA
Ra.1 MC - 50 - 25
Rr. = 10kC 70 - 25 -
Rr. = 200C 1.5 - 1 - mA
Anode Gate·Anode Leakage Current (VS = 40 V)'
T _ 25°0 IGAO - 10 - 10
T = 75°0 - 100 - 100 nA
Gale to Cathode Leakage Current
V" = 40 V, Anode-cathode short IGKS - 100 - 100
Pulse Voltage Rate of Rise t, - eo - 80 ns 'In accordance with JEDEC registration dala format.

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G E SOLID STATE

3875081 G E SOLID STATE

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DE 13875081 0018020 4 ___ 01E 18020 0

Unijunctlon Transistors and Switches _

2N6027, 2N6028, GES6027, GES6028

Elip RZ 82

H, 8,

RB."",tH2 ~VE.'

", ,. R,+R2

ZE

92CS-42lU

Typlca' circuit (8)

Unijunclion transistor equivalent circuit

(b)

Negalive resistance characteristic

(c)

Fig. 1- Un/junction trans/star

+

"2

H.,

A G

82

PUT At

92CS-42330

Programmable un/junction Ilansistor raplaclng unijunction Ilansistor in typical circuit, Fig. 1, a.

Programmable unljunction transistor equivalent circuit

Simplified, typical CirCUit, FIg. 1, a uUlizing programmable un/junclion trsnslstor:

(a)

(b)

(c)

F/g. 2 - Programmable un/junction transIstor equivalent of un/junction transistor.

124 _

G E SOLID STATE

3875081 G E SOLID STATE

01

DEI3875081 0018021 6 I 01E 18021 D

_____________________ UniJunctlon Transistors and Switches

2N6027, 2N6028, GES6027, GES6028 T'2S-oCf

V.

Fig. 3 - Offset voltage, peak cu"ent, and voltage cUlrant meaSUlem9llt circuits and wavefolm.

92,CI-<42553

Fig. 4 - Anode gate-anode leakage CUflent measulement circuit.

Fig. 5 -Gate to cathode leakage cunent measurement clrcuit.

HOV

5tOkn tUn

aTtn.

Vo

'v~

o .• v _ f

Or '

92CS-42534

Fig. Ii - Pulse output voltage and pulse voltage rate-of-rise measUlement cilcult and wave/olm.

_________________________________________________________________ 125

G E SOLID STATE

01

DE 13875081 0018022 8 r-

Unljunction Transistors and Switches "'--_

2N6027, 2N6028, GES6027, GES6028

Fig. 7- Typical peak point current characterisrlcs.

o e Vs.fOV
,
4 ~toJ.Q
<t 2
.. ~~''b.r---.
I
'4.1 ~.Q
!:! •
,_ , <, <,
z •
'" ~,~ <,
0:
0: 2
" ofi.Q
u <,
,_ ~
~o.t
0 •
.. •
" <, "-
tl • <,
..
2
0,01 <,
- - - 7D

50 25 0 25 eo 75 100

AMBIENT TEMPERATURE (TAJ-·C 92(5'42337

o

Fig. 9- Typlca/peakpoint current characieristics.

3 VOLTAGE SOURCE {Vsl"ov

> \
.!. 2 r-1.~'<-
...
e
OJ
..
~ r\''b~ ~.,
0
> 1
... " ~
'" ~
.,
.. r-- t--....
..
0 r-r"OT
0 ~ ~ -75

-DO -ZD 0 25 DO lD

AMBIENT TEMPERATURE !TAI-'C nCS-42339

Ag. 11- Typical offset voltage charaoteristics.

126

Fig, 8 - Typical velley current characteristics.

000. vs·1QV

• -~o.~
« 2 ~l,oo.a -
.. t---
1-looe
d" • r--. r--
Ii; • RG.,
'" "~ -
0: 2
0: --..
" r--,
u
,.. 10
'" .
..J •
..J 4
!I
2
1 -7D

-50 -25

100

°

25

50

75

AMBIENT TEMPERATURE (TAJ-·C 9ZC:Sw4ZUI

Fig. 10- TypIcal valley current charaoteristics.

30 ?v
> 25-, 510kn 16Ul
I
~ r-- /'
OJ 20r-- ~~~ O~V
.. - ann
;!
_, (.' :;..;
0 1Dr-- 20n
> ,/'
,_ -:
"
.. ~
,_
" 10
0 V
"' V --
.,
_, -1°00• -
"
.. 5 .,/
~ f...-
0_ 100

40

10 15 20 25

VOLTAGE SOURCE (Vs,-V

30 35

92C5-42340

Fig. 12 - Typical pulse voltage characteristics.

G E SOLID STATE

3875081 G E SOLID STATE

01

DE 13875081 0018023 0 __

01E 18023

o

_____________________ UnlJunction Transistors and Switches

2N6027, 2N6028, GES6027, GES6028

T' 2.S· 0'7

Here are four ways to use the PUT as a unijunction. Note the flexibility due to "programmability." Applicaticns from long time Interval latching timers to wide range relaxation oscillators are possible.

PUT

'2<:$-42344

Low Ip; very high tv, temperature and V .. compensa6on

Lowlpandlv

Fig. 13 - Typical programmable unijunction transIstor circuits.

This sampling circuit lowers the effective peak current of the output PUT, a2. By allowing the capacitor to charge with high gate voltage and periodically lowering gate voltage, when a1 fires, the timing reistor can be a value which supplies a much lower current than Ip. The triggering requirement here is that minimum charge to trigger flow through the timing resister during the period of the at oscillator. This Is not capacitor size dependent, only capacitor leakage and stability dependent.

Fig. 14 -Hour lime-delay sampling circuit.

Here Is a handy circuit which operates as an oscillator and a limer. The 2N6028 is normally on due to excess holding current through the 100 kohm resistor. When the switch is momentarily closed, the 10 "F capacitor Is charged to a full 15 volts and 2N6028 starts oscillating (1.8 Meg and 820 pF). The circuit latches when 2N2926 zener breaks down again.

Fig. 15-1-second, 1kHzoscil/atorcircuit.

I.

t.8tn

PUT

-Bj 92(5-42341

Low Ip; medium tv, temperature, V. compensation

Low Ip, medium Iv

START +~~~----------_.-------.

+,~

220kll

92(5-4234,

TERMINAL CONNECTIONS TO-92 and TO-9B Packages Lead 1 - Anode

Lead 2 - Gate

Lead 3 - Cathode

127