UTC PCR406

DESCRIPTION
The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

SCR

TO-92

1:CATHODE

2:GATE

3:ANODE

ABSOLUTE MAXIMUM RATINGS

PARAMETERS
Repetitive Peak Off-State Voltage PCR406-6 PCR406-5 On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature

SYMBOL
VDRM

TEST CONDITION
Tj=40 to 125C (RGK =1k) Tc=40C Half Cycle=180, Tc=40C IGR=10uA 10us Max. 20ms Max.

RATING
400 300 0.8 0.5 1 0.1 150 -40~125 -40~125 250

UNITS
V A A V A mW C C C

IT(RMS) IT(AV) VGRM IGM PG(AV) Tj TSTG TSLD

1.6mm from case 10s Max.

ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified)

PARAMETER
Off state leakage current Off state leakage current On state voltage On state threshold voltage On state slops resistance Gate trigger current Gate trigger voltage Holding current Latching current Critical rate of voltage rise

SYMBOL
IDRM IDRM

TEST CONDITIONS
VDRM(RGK=1K), Tj=125C VDRM(RGK=1K), Tj=25C IT=0.4A IT=0.8A Tj=125C Tj=125C VD=7V VD=7V RGK=1K RGK=1K VD=0.67*VDRM(RGK=1K), Tj=125C

MIN

MAX
0.1 1.0 1. 4 2.2 0.95 600 200 0.8 5 6

UNIT
mA A V V m A V mA mA V/s

VT VT(TO) Rt IGT VGT IH IL DV/DT

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R301-010,A

UTC PCR406
PARAMETER
Critical rate of current rise Gate controlled delay time Commutated turn-off time

SCR
SYMBOL
DV/DT TGD TG

TEST CONDITIONS
IG=10mA, dIG/dt=0.1A/s, Tj=125C IG=10mA, dIG/dt=0.1A/s, Tj=85C, VD=0.67*VDRM, VR=35V, IT=IT(AV)

MIN

MAX

UNIT
A/s

2.2 200

s s

CLASSIFICATION OF IGT
RANK RANGE B 50-100A C 100-200A AA 8-15A AB 15-20A AC 20-25A AD 25-50A

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R301-010,A

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