Shen zhen TuoFeng industrial co.

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AO3407 P-Channel Enhancement Mode Field Effect Transistor

General Description
The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3407 is Pb-free (meets ROHS & Sony 259 specifications). AO3407L is a Green Product ordering option. AO3407 and AO3407L are electrically identical.

Features
VDS (V) = -30V ID = -4.1 A (V GS = -10V) RDS(ON) < 52m (VGS = -10V) RDS(ON) < 87m (VGS = -4.5V)

D (SOT-23) Top View G D S G S

Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B

Maximum -30 20 -4.1 -3.5 -20 1.4 1 -55 to 150

Units V V A

TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG

W C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 65 85 43

Max 90 125 60

Units C/W C/W C/W

AO3407

Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-3A Forward Transconductance VDS=-5V, ID=-4A 5.5 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -10 40.5 57 64 8.2 -0.77 -1 -2.2 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.3 VGS=-4.5V, VDS=-15V, ID=-4A 7 3.1 3 8.6 VGS=-10V, VDS=-15V, RL=3.6, RGEN=3 IF=-4A, dI/dt=100A/s 5 28.2 13.5 27 15 36 15 18 840 52 73 87 -1.8 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge (10V) Qg Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/s

AO3407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 -10V 15 -ID (A) 10 -5V -4.5V -4V -ID(A) 6 4 2 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.6 VGS=-4.5V 1.4 VGS=-10V -VGS(Volts) Figure 2: Transfer Characteristics 8 VDS=-5V

10

-3.5V VGS=-3V

125C

25C

0 0.00

80 RDS(ON) (m) VGS=-4.5V 60 VGS=-10V 40

1.2

ID=-2A

20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (m) -IS (A) 100 80 60 40 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-2A

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C

Alpha & Omega Semiconductor, Ltd.

AO3407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-4A Capacitance (pF) 1000 800 600 400 200 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics

Ciss

Coss Crss

100

TJ(Max)=150C TA=25C RDS(ON) limited 0.1s 100s 10s 1ms 10ms

40

TJ(Max)=150C TA=25C

Power (W)

-ID (Amps)

10

30

20

1 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

10

0 0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton Single Pulse

0.01 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.