Solutions Chap07

CHAPTER SEVEN SOLUTIONS
εA 8.854 × 10 −12 (78.54 × 10 −6 )

1. (a) C = = = 6.954 pF
d 100 × 10 − 6
1 2E 2(1 × 10 − 3 )
(b) Energy , E = CV 2 ∴V = = = 16.959kV
2 C 6.954 × 10 −12
1 2 E 2(2.5 × 10 −6 )
(c) E = CV 2 ∴C = 2 = = 500 pF
2 V (100 2 )
εA Cd (500 × 10 −12 )(100 × 10 −6 )
C= ∴ε = = = 636.62 pF .m −1
d A (78.54 × 10 ) −6
ε 636.62 × 10 −12
∴ Re lative _ permittivity, = = 71.9
ε0 8.854 × 10 −12
Engineering Circuit Analysis, 6th Edition Copyright 2002 McGraw-Hill, Inc. All Rights Reserved
For VA = -1V, W =
2K sε 0
(Vbi − V A ) = 2(11.8) 8−.854 (
× 10 −12 )
(0.57 + 1)
2. (a)
qN (
1.6 × 10 19 1 × 10 24 )( )
−9
= 45.281 × 10 m
Cj =
(
11.8 8.854 × 10 −12 1 × 10 −12)( ) = 2.307 fF
−9
45.281 × 10
For VA = -5V, W =
2K sε 0
(Vbi − V A ) = 2(11.8) 8.854 × 10 −12 (
(0.57 + 5) )
(b)
qN 1.6 × 10 −19 1 × 10 24 ( )( )
= 85.289 × 10 −9 m
Cj =
(
11.8 8.854 × 10 −12 1 × 10 −12)( ) = 1.225 fF
−9
85.289 × 10
(c) For VA = -10V,
W=
2K sε 0
(Vbi − V A ) = 2(11.8) 8−.854 (
× 10 −12
(0.57 + 10) )
qN (
1.6 × 10 19 1 × 10 24 )( )
= 117.491 × 10 −9 m
Cj =
( )(
11.8 8.854 × 10 −12 1 × 10 −12 ) = 889.239aF
−9
117.491 × 10
3. We require a capacitor that may be manually varied between 100 and 1000 pF by rotation
of a knob. Let’s choose an air dielectric for simplicity of construction, and a series of 11
half-plates:
fixed
Top view Side view with no Side view with a small

overlap between plates overlap between plates.
Constructed as shown, the half-plates are in parallel, so that each of the 10 pairs must
have a capacitance of 1000/ 10 = 100 pF when rotated such that they overlap completely.
If we arbitrarily select an area of 1 cm2 for each half-plate, then the gap spacing between
each plate is d = εA/C = (8.854×10-14 F/cm)(1 cm2)/ (100×10-12 F) = 0.8854 mm. This is
tight, but not impossible to achieve. The final step is to determine the amount of overlap
which corresponds to 100 pF for the total capacitor structure. A capacitance of 100 pF is
equal to 10% of the capacitance when all of the plate areas are aligned, so we need a pie-
shaped wedge having an area of 0.1 cm2. If the middle figure above corresponds to an
angle of 0o and the case of perfect alignment (maximum capacitance) corresponds to an
angle of 180o, we need to set out minimum angle to be 18o.
−  3 − 
t t
2×10 − 3
3e . − e dt = −1.080 µJ

dv t
4. (a) Energy stored = ∫ v.C = C∫ 5 5
t0 dt 0  5 
 
(b) Vmax = 3V
1
Max. energy at t=0, = CV 2 = 1.35mJ ∴ 37% E max = 499.5µJ
2
V at 37% Emax = 1.825V
t
−
v (t ) = 1.825 = 3e 5 ∴ t = 2.486 s ⇒≈ 2 s
 −
1.2 
−6  3
− e 5  = −141.593µA
dv
(c) i=C = 300 × 10
dt  5 
 
(d) ( )
P = vi = 2.011 − 120.658 × 10 −6 = −242.6µW
5. (a) v=
1 π
(
. 1 × 10 −3 )2 = 1
.
(3.14159 ) (1 × 10 −3 )2 = 33.421mV
C 2 47 × 10 −6 2
(b) v=
1 π
(
. 1 × 10 −3 )2 + 0  = 1
.
(3.14159 ) (1 × 10 −3 )2 = 33.421mV
C 2 47 × 10 −6 2
(c) v=
1 π
(
. 1 × 10 −3 )2 + π4 (1 × 10 −3 )2  = 1  3π
. (1 × 10 −3 )2  = 50.132mV
C 2 47 × 10 −6  4
200ms
1 200ms 1  7 × 10 −3  0.426
6. V= ∫0 idt =  − cos πt  =
C  π 
C  0
C
1 181.086 × 10 −9 181.086 × 10 −9
E= CV 2 = 3 × 10 −6 = ∴C = = 30181µF
2 2C 2 3 × 10 −6 ( )
7.
(a) c = 0.2 µ F, vc = 5 + 3cos 2 200tV; ∴ ic = 0.2 × 10−6 (3) (−2) 200sin 200t cos 200t
∴ ic = −0.12sin 400tmA
1 2 1
(b) wc = cvc = × 2 × 10−7 (5 + 3cos 2 200t ) 2 ∴ wc max = 10−7 × 64 = 6.4µ J
2 2
1 t
(c) vc = × 106 ∫ 8e−100t × 10−3 dt = 103 × 40(−0.01) (e −100t − 1) = 400(1 − e100t )V
0.2 0
(d) vc = 500 − 400e−100t V
0.1
8. vc (0) = 250V, c = 2mF ( a) vc (0.1) = 250 + 500 ∫ 5dt
0
0.2
∴ vc (0.1) = 500V; vc (0.2) = 500∫ 10dt = 1000V
0.1
∴ vc (0.6) = 1750V, vc (0.9) = 2000V

∴ 0.9 < t < 1: vc = 2000 + 500 ∫ 10dt = 2000 + 5000(t − 0.9)
t
0.9
∴ vc = 2100 = 2000 + 5000(t2 − 0.9) ∴ t2 = 0.92 ∴ 0.9 < t < 0.92s
9.
1 2 1
(a) wc = Cv = × 10−6 v 2 = 2 × 10−2 e−1000t ∴ v = ±200e −500t V
2 2
i = Cv′ = 10 (±200) (−500)e−500t = m0.1e−500 t
−6
−v 200
∴R = = = 2k Ω
i 0.1
(b) PR = i 2 R = 0.01 × 2000e −1000 t = 20e −1000 t W

∞
∴ WR = ∫ 20e −1000t dt = −0.02e −1000t ∞
0 = 0.02J
0
10. (a) Left circuit:

By Voltage division, VC =
1k
(5) = 0.877V
4.7k + 1k
Right circuit:
V1 = 1(1 // 2 ) = V
2
3
1 1
By Voltage Division, V2 = V ∴VC = − V
3 3
(b)
11.
(a)
(b) PL = vLiL ∴ PL max = (−100) (−5) = 500W at t = 40− ms
(c) PL min = 100(−5) = −500W at t = 20+ and 40+ ms
1 2 1
(d) WL = Li L ∴ WL (40ms) = × 0.2(−5) 2 = 2.5J
2 2
12.
L = 50 × 10−3 , t < 0 : i = 0; t > 0 i = 80te −100t mA = 0.08te −100t A

∴ i′= 0.08e-100t − 8te−100t ∴ 0.08 = 8t , tm , = 0.01s, i max = 0.08 × 0.01e−1
∴ i max = 0.2943mA; v = 0.05i′ = e −100t (0.004 − 0.4t )
0.8
∴ v′ = e −100t (−0.4) − 100e −100t (0.004 − 0.4t ) ∴−0.4 = 0.4 − 40t , t = = 0.02 s
40
v = e−2 (0.004 − 0.008) = −0.5413mV this is minimum∴ v max = 0.004V at t=0
13.
(a) t > 0 : is = 0.4t 2 A ∴ vin = 10is + 5is′ = 4t 2 + 4tV
1 t
5 ∫0
(b) iin′ = 0.1vs + 40tdt + 5 = 4t + 4t 2 + 5A
14. vL = 20 cos1000tV, L = 25mH, iL (0) = 0
t
(a) iL = 40∫ 20 cos 1000tdt = 0.8sin 1000tA ∴ p = 8sin 2000t W
0
1
(b) w = × 25 × 10−3 × 0.64sin 2 1000t = 8sin 2 1000t mJ
2
15.
t
(a) 0 < t < 10 ms: iL = −2 + 5∫ 100dt = −2 + 500t ∴ iL (10ms) = 3A, iL (8ms) = 2A
0
iL (0) = 0 ∴ iL (10ms) = 500 × 0.01 = 5A ∴ iL (20ms) = 5 + 5∫

0.02
(b) 104 (0.02 − t )dt
0.01
∴ iL (20ms) = 5 + 5 ×10 4 (0.02t − 0.5t )0.02

0.01 = 5 + 5 × 10 (0.0002 − 0.00015) = 7.5A
4
1
∴ wL = × 0.2 × 7.52 = 5.625J
2
(c) If the circuit has been connected for a long time, L appears like short circuit.
V8Ω =
8
(100V ) = 80V
2+8
20V
I 2Ω = = 10 A
2Ω
80V
∴i x = = 1A
80Ω
16. L = 5H, VL = 10(e− t − e−2t )V, iL (0) = 0.08A
(a) vL (1) = 10(e−1 − e−2 ) = 2.325+ V
t
(b) iL = 0.08 + 0.2 ∫ 10(e− t − e−2t )dt = 0.08 + 2( −e− t + 0.5e −2 t )t0
0
iL = 0.08 + 2(−e − t + 0.5e −2t + 1 − 0.5) = 1.08 + e −2 t − 2e − t ∴ iL (1) = 0.4796A
(c) iL (∞ ) = 1.08A
17.
40 12
(a) vx = 120 × + 40 × 5 ×
12 + 20 + 40 12 + 20 + 40
200 100
= + = 100V
3 3
(b) 120 15 15 12
vx = × × 40 + 40 × 5
12 + 15 60 15 + 60 15 12 + 60
120 1 6.667
= × × 40 + 200
12 + 12 5 66.667
= 40 + 20 = 60V
18.
1
(a) wL = × 5 × 1.62 = 6.4J
2
1
(b) wc = × 20 × 10 −6 × 100 2 = 0.1J
2
(c) Left to right (magnitudes): 100, 0, 100, 116, 16, 16, 0 (V)
(d) Left to right (magnitudes): 0, 0, 2, 2, 0.4, 1.6, 0 (A)
19.
(a) vs = 400t 2 V, t > 0; iL (0) = 0.5A; t = 0.4 s
1
vc = 400 × 0.16 = 64V, wc ×10−5 × 642 = 20.48mJ
2
0.4 1
(b) iL = 0.5 + 0.1∫ 400t 2 dt = 0.5 + 40 × × 0.43 = 1.3533A
0 3
1
∴ wL = × 10 × 1.35332 = 9.1581J
2
0.4
(c) iR = 4t 2 , PR = 100 × 16t 4 ∴ wR = ∫ 1600t 4 dt = 320 × 0.45 = 3.277J
0
V 2 (2 )2
20. (a) P7Ω = 0W ; P10Ω = = = 0.4W
R 10
(b) PSpice verification

We see from the PSpice
simulation that the
voltage across the 10-Ω
resistor is –2 V, so that
it is dissipating 4/10
= 400 mW.
The 7-Ω resistor has

zero volts across its
terminals, and hence
dissipates zero power.
Both results agree with

the hand calculations.
21.
   
   
C equiv ≡ 10µ +  1  in series with 10 µ in series with 10µ +  1 
 1 1   1 1 
 10µ + 10µ   10 µ + 10 µ 
   
≡ 4.286 µF
22. Lequiv ≡ (77 p // (77 p + 77 p )) + 77 p + (77 p // (77 p + 77 p )) = 179.6&pH
23. (a) Assuming all resistors have value R, all inductors have value L, and all capacitors
have value C,
(b) At dc, 20µF is open circuit; 500µH is short circuit.

Using voltage division, V x =
10k
(9 ) = 3.6V
10k + 15k
24. (a) Assuming all resistors have value R, all inductors value L, and all capacitors value C,
Vx
(b) V x = 0V as L is short circuit at dc.
25. Cequiv = { [(100 n + 40 n) || 12 n] + 75 n} || {7 µ + (2 µ || 12 µ)}
C equiv ≡ 85.211nF
26. Lequiv = {[ (17 p || 4 n) + 77 p] || 12 n} + {1 n || (72 p + 14 p)}
Lequiv ≡ 172.388 pH
27. CT − C x = (7 + 47 + 1 + 16 + 100) = 171µF
E CT −Cx =
1
(CT − C x )V 2 = 1 (171µ )(2.5)2 = 534.375µJ
2 2
E C x = E CT − E CT −C x = (534.8 − 534.375)µJ = 425nJ
1 425n(2 )
∴ E C x = 425n = C xV 2 ⇒ C x = = 136nF
2 (2.5)2
28.
   
 1   1 
(a) For all L = 1.5H, Lequiv = 1.5 +   +   = 2.75H
 1 + 1   1 + 1 + 1 
   
 1.5 1.5   1.5 1.5 1.5 
(b) For a general network of this type, having N stages (and all L values equiv),
n
LN
Lequiv = ∑ NLN −1
N =1
29.
   
 1   1 
(a) Lequiv =1+   +   = 3H
1 + 1 1+1+1
   
 2 2 3 3 3
(b) For a network of this type having 3 stages,
Lequiv = 1 +
1
+
1
=1+
(2 )2 + (3)3
2+ 2 3+3 1 2(2 ) 3(3)2
+
(2 )
2
(3) 2 3
Extending for the general case of N stages,
1 1 1
Lequiv = 1 + + +Κ +
1 1 1 1 1 1 1
+ + + +Κ
2 2 3 3 3 N N
1 1 1
= 1+ + +Κ + = N
2(1 / 2) 3(1 / 3) N(1/N)
30. C equiv =
(3 p )(0.25 p ) = 0.231 pF
3 p + 0.25 p
31. Lequiv =
(2.3&n )(0.3&n ) = 0.2916&nH
2.6&n
32. (a) Use 2 x 1µH in series with 4 x 1µH in parallel.
(b) Use 2 x 1µH in parallel, in series with 4 x 1µH in parallel.
(c) Use 5 x 1µH in parallel, in series with 4 x 1µH in parallel.
33.
10 10 55
(a) R = 10Ω :10 10 10 = , + 10 + 10 10 =
3 3 3
55
∴ R eq = 30 = 11.379Ω
3
(b) L = 10H ∴ Leq = 11.379H
1
(c) C = 10F : = 5.4545
1/ 30 + 1/10 + 1/ 20
10
∴ Ceq = 5.4545 + = 8.788F
3
34.
(a) oc :Leq = 6 1 + 3 = 3.857H

sc : Leq = (3 2 + 1) 4 = 2.2 4 = 1.4194H
(b) 1 7 1
oc :1 + = , ceq = = 1.3125F
1/ 4 + 1/ 2 3 3 / 7 + 1/ 2
1 5 5
sc : = , Ceq = 4 + = 4.833F
1/ 5 + 1 6 6
35.
(a)
(b)
(c)
36. is = 60e−200t mA, i1 (0) = 20mA
(a) 6 4 = 2.4H ∴ v = Leq is′ = 2.4 × 0.06(−200)e−200t

or v = −28.8e −200t V
1 t 4.8 −200t
(b) i1 = ∫
6 o
−28.8e −200t dt + 0.02 =
200
(e − 1) + 0.02
= 24e −200t − 4mA(t > 0)
(c) i2 = is − i1 = 60e −200t − 24e −200 t + 4 = 36e −200t + 4mA(t > 0)
37. vs = 100e−80tV , v1 (0) = 20V
(a) i = Ceq vs′ = 0.8 × 10−6 (−80)100e −80t = −6.4 × 10 −3 e −80t A
t 6400 −80t
(b) v1 = 106 (−6.4 × 10−3 ) ∫ e−80 t dt + 20 = (e − 1) + 20
o 80
∴ v1 = 80e −80t − 60V
106 t 1600 −80t

(c) v2 (−6.4 × 10−3 ) ∫ e−80t dt + 80 = (e − 1) + 80
4 o 80
= 20e −80t + 60V
38.
(a) vc − vs v −v
+ 5 × 10−6 vc′ + c L = 0
20 10
vL − vc 1
8 × 10−3 ∫o
t
+ vL dt + 2 = 0
10
1 t
(b) 20i20 +
5 × 10−6 ∫ (i
o
20 − iL ) dt + 12 = vs
1 t
5 × 10−6 ∫ (i
o
L − i20 )dt − 12 + 10iL + 8 × 10−3 iL′ = 0
39.
vc (t ): 30mA: 0.03 × 20 = 0.6V, vc = 0.6V

9V: vc = 9V, 20mA: vc = −0.02 × 20 = 0.4V
0.04 cos103 t : vc = 0
∴ vc (t ) = 9.2V
vL (t ): 30mA, 20mA,
9V: vL = 0; 0.04 cos103 t : vL = −0.06 × 0.04 ( −1000) sin103 t = 2.4sin103 tV
40. We begin by selecting the bottom node as the reference and assigning four nodal
voltages:
V4
V2
V1 V3
Ref.
1, 4 Supernode: 20×10-3 e-20t =

V1 - V2
50 0
( )
+ 0.02 × 103 ∫ V4 − 40e − 20t dt ′
t
[1]
and: V1 – V4 = 0.2 Vx or 0.8V1 + 0.2 V2 – V4 = 0 [2]
V2 - V1 V - 40e −20t dV2

Node 2: 0 = + 2 + 10- 6 [3]
50 100 dt
41. (a) R i = ∞, R o = 0, A = ∞∴ vi = 0 ∴ i = Cvs′

also 0 + Ri + vo = 0 ∴ vo = − RCvs′
1
c∫
−vi + Ri − Avi = 0, vs = idt + vi
−1 1+ A
(b) vo = − Avi ∴ vi = vo ∴ i = vi
A R
1 1 1 1+ A v
∴ vs = ∫ idt − vo = − vo + ∫ − o dt
c A A RC A
1+ A 1+ A
∴ Avs′ = −vo′ − vo or vo′ + vo + Avs′ = 0
RC RC
42. Place a current source in parallel with a 1-MΩ resistor on the positive input of a buffer
with output voltage, v. This feeds into an integrator stage with input resistor, R2, of
1-MΩ and feedback capacitor, Cf, of 1 µF.
dv c f ions
i=Cf = 1.602 × 10 −19 ×
dt sec
Va − V dv c f Va − V ions
0= +Cf = + 1.602 × 10 −19
1 × 10 6 dt 1 × 10 6 sec
−V dv c f −V −19 ions
0= +Cf = + 1 . 602 × 10
R2 dt 1 × 10 6 sec
∫0 vdt ' = C f (Vc )

− Vc f (0)
1 t
Integrating current with respect to t,
R2 f
1.602 × 10 −19 × ions

= C f Vc f
R2
− R1 −1
Vc f = Va − Vout ⇒ Vout = × 1.602 × 10 −19 × ions ⇒ Vout = × 1.602 × 10 −19 × ions
R2 C f Cf
R1 = 1 MΩ, Cf = 1µF
43. R = 0.5MΩ, C = 2 µ F, R i = ∞, R o = 0, vo = cos10t − 1V
 1 1 t vo 
(a) Eq. (16) is: 1 +  vo = −
 A RC ∫o  vs +  dt − vc (0)
A
 1 1  vo   1  1 1
∴ 1 +  vo′ = −  vs +  ∴ 1 +  (−10sin10t ) = −1 vs + cos10t − 
 A RC  A  A  A A
 1 1 1
∴ vs = 1 + 10 sin10t + − cos10t Let A = 2000
 A A A
∴ vs = 10.005sin10t + 0.0005 − 0.0005cos10t
(b) Let A = ∞∴ vs = 10sin10tV
44. Create a op-amp based differentiator using an ideal op amp with input capacitor C1 and
feedback resistor Rf followed by inverter stage with unity gain.
R dvs 1mV
Vout = + R f C1 = 60 × / min
R dt rpm
RfC1=60 so choose Rf = 6 MΩ and C1 = 10 µF.
1 Va − Vout
L∫
45. (a) 0= vdt +
Rf
1 Vout − Rf t
L∫ ∫0 v s dt'
Va = V = 0,∴ v L dt = ⇒ V out =
Rf L
(b) In practice, capacitors are usually used as capacitor values are more readily
available than inductor values.
46.
(a)
1 t
(b) 20v20 +
5 × 10−6 ∫ (v
o
20 − vc )dt + 12 = is
1 t
5 × 10−6 ∫ (v
o
c − v20 )dt − 12 + 10vc + 8 × 10−3 vc′ = 0
(c) iL − is i −i
+ 5 ×10 −6 iL′ + L c = 0
20 10
ic − iL 1 t
−3 ∫o c
+ i dt + 2 = 0
10 8 × 10
47.
48.
49.
(a)
(b) “Let is = 100e-80t A and i1 (0) = 20 A in the circuit of (new) Fig. 7.62.
(a) Determine v(t) for all t.

(b) Find i1(t) for t ≥ 0.
(c) Find v2(t) for t ≥ 0.”
(c) (a) Leq = 1 4 = 0.8µ H∴ v(t ) = Leq is′ = 0.8 × 10−6 × 100(−80)r −80t V
∴ v(t) = −6.43-80t mV
t 6400 −80 t
(b) i1 (t ) = 106 ∫ −6.4 ×10 −3 e −80 t dt + 20 ∴ i1 (t ) = (e − 1) = 80e −80 t − 60A
o 80
(c) i2 (t ) = is − i1 (t ) ∴ i2 (t ) = 20e−80t + 60A
50.
In creating the dual of the original circuit, we have lost both vs and vout. However, we
may write the dual of the original transfer function: iout/ is. Performing nodal analysis,
1 t
L1 ∫0
iS = V1dt ′ + G in (V1 - V2 ) [1]
iout = Aid = GfV2 + Gin (V2 – V1) [2]

Dividing, we find that
iout G in (V2 - V1 ) + G f V2
=
iS 1 t
L1 ∫0
V1dt ′ + G in (V1 - V2 )
51. PSpice verification
w = ½ Cv2 = 0.5 (33×10-6)[5 cos (75×10-2)]2 = 220.8 µJ. This is in agreement with the
PSpice simulation results shown below.
w = ½ Li2 = 0.5 (100×10-12)[5 cos (75×10-2)]2 = 669.2 pJ. This is in agreement with
the PSpice simulation results shown below.
Va − V s 1
53. 0= + ∫ v L f dt
R1 L
− Vs 1
Va = Vb = 0, 0= + ∫ v L f dt
R1 L
L dVs
V L f = Va − Vout = 0 − Vout =
R1 dt
Vout = −
L f dVs
R1 dt
=−
Lf d
R1 dt
( )
A cos 2π 10 3 t ⇒ L f = 2 R1 ; Let _R = 1 Ω and L = 1 H.
PSpice Verification: clearly, something rather odd is occuring in the simulation of this
particular circuit, since the output is not a pure sinusoid, but a combination of several
sinusoids.
w = ½ Cv2 = 0.5 (33×10-6)[5 cos (75×10-2) - 7]2 = 184.2 µJ. This is in reasonable
agreement with the PSpice simulation results shown below.
w = ½ Li2 = 0.5 (100×10-12)[5 cos (75×10-2) - 7]2 = 558.3 pJ. This is in agreement with
the PSpice simulation results shown below.

Solutions Chap07

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Solutions Chap07

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CHAPTER SEVEN SOLUTIONS

εA 8.854 × 10 −12 (78.54 × 10 −6 )

(c) For VA = -10V,

Top view Side view with no Side view with a small

(d) vc = 500 − 400e−100t V

∴ vc (0.6) = 1750V, vc (0.9) = 2000V

∴ vc = 2100 = 2000 + 5000(t2 − 0.9) ∴ t2 = 0.92 ∴ 0.9 < t < 0.92s

(b) PR = i 2 R = 0.01 × 2000e −1000 t = 20e −1000 t W

10. (a) Left circuit:

(b) PL = vLiL ∴ PL max = (−100) (−5) = 500W at t = 40− ms

(c) PL min = 100(−5) = −500W at t = 20+ and 40+ ms

L = 50 × 10−3 , t < 0 : i = 0; t > 0 i = 80te −100t mA = 0.08te −100t A

(a) t > 0 : is = 0.4t 2 A ∴ vin = 10is + 5is′ = 4t 2 + 4tV

14. vL = 20 cos1000tV, L = 25mH, iL (0) = 0

iL (0) = 0 ∴ iL (10ms) = 500 × 0.01 = 5A ∴ iL (20ms) = 5 + 5∫

∴ iL (20ms) = 5 + 5 ×10 4 (0.02t − 0.5t )0.02

16. L = 5H, VL = 10(e− t − e−2t )V, iL (0) = 0.08A

(a) vL (1) = 10(e−1 − e−2 ) = 2.325+ V

iL = 0.08 + 2(−e − t + 0.5e −2t + 1 − 0.5) = 1.08 + e −2 t − 2e − t ∴ iL (1) = 0.4796A

(d) Left to right (magnitudes): 0, 0, 2, 2, 0.4, 1.6, 0 (A)

(b) PSpice verification

The 7-Ω resistor has

Both results agree with

22. Lequiv ≡ (77 p // (77 p + 77 p )) + 77 p + (77 p // (77 p + 77 p )) = 179.6&pH

(b) At dc, 20µF is open circuit; 500µH is short circuit.

(b) V x = 0V as L is short circuit at dc.

25. Cequiv = { [(100 n + 40 n) || 12 n] + 75 n} || {7 µ + (2 µ || 12 µ)}

26. Lequiv = {[ (17 p || 4 n) + 77 p] || 12 n} + {1 n || (72 p + 14 p)}

27. CT − C x = (7 + 47 + 1 + 16 + 100) = 171µF

E C x = E CT − E CT −C x = (534.8 − 534.375)µJ = 425nJ

(b) For a network of this type having 3 stages,

Extending for the general case of N stages,

32. (a) Use 2 x 1µH in series with 4 x 1µH in parallel.

(b) Use 2 x 1µH in parallel, in series with 4 x 1µH in parallel.

(c) Use 5 x 1µH in parallel, in series with 4 x 1µH in parallel.

(b) L = 10H ∴ Leq = 11.379H

(a) oc :Leq = 6 1 + 3 = 3.857H

36. is = 60e−200t mA, i1 (0) = 20mA

(a) 6 4 = 2.4H ∴ v = Leq is′ = 2.4 × 0.06(−200)e−200t

= 24e −200t − 4mA(t > 0)

(c) i2 = is − i1 = 60e −200t − 24e −200 t + 4 = 36e −200t + 4mA(t > 0)

37. vs = 100e−80tV , v1 (0) = 20V

(a) i = Ceq vs′ = 0.8 × 10−6 (−80)100e −80t = −6.4 × 10 −3 e −80t A

106 t 1600 −80t

vc (t ): 30mA: 0.03 × 20 = 0.6V, vc = 0.6V

1, 4 Supernode: 20×10-3 e-20t =

and: V1 – V4 = 0.2 Vx or 0.8V1 + 0.2 V2 – V4 = 0 [2]

V2 - V1 V - 40e −20t dV2

41. (a) R i = ∞, R o = 0, A = ∞∴ vi = 0 ∴ i = Cvs′

∫0 vdt ' = C f (Vc )

1.602 × 10 −19 × ions

43. R = 0.5MΩ, C = 2 µ F, R i = ∞, R o = 0, vo = cos10t − 1V

(b) Let A = ∞∴ vs = 10sin10tV

(a) Determine v(t) for all t.

(c) i2 (t ) = is − i1 (t ) ∴ i2 (t ) = 20e−80t + 60A

iout = Aid = GfV2 + Gin (V2 – V1) [2]

51. PSpice verification

52. PSpice verification

54. PSpice verification

55. PSpice verification

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