TOSHIBA TC74HCO2AP/AF/AEN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCO2AP, TC74HCO2AF, TC74HCO2AFN QUAD 2-INPUT NOR GATE (Note) The JEDEC SOP (FX) is not available in Japan, The TC74HCO2A is a high speed CMOS 2INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of $ stages, including a buffer output, which provide high noise immunity and stable output, All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES: «+ High Speed: + Low Power Dissipation + High Noise Immunity + Output Drive Capability Vout 28% Vo (Min.) 10 LSTTL Loads ( DIP14-P-300-2.54) Weight 0.969 (Typ.) Ngee 1 FN (SOL147-150-1.27) Weight 0.129 Typ.) F(SoPt4-P-300-1.27) Weight: 0.189 (Typ.) PIN ASSIGNMENT v4 14 Vec + Symmetrical Output Impedance~| lox | =lo.=4mA(Min.) tA is ae + Balanced Propagation Delays-~tpin™tprt « Pin and Function Compatible with 74LS02 2 4 1] 11 4a 2A 5 f] 10 av med OBS GND 7 f]s 3a (Top view) IEC LOGIC SYMBOL TRUTH TABLE 2001-05-17TOSHIBA ‘ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Supply Voltage Range Vec S~7 v DC Input Voltage Vi =05~Vec 40.5 v DC Output Voltage Vout =05=Vec 40.5 Vv Input Diode Current i #20 mA Output Diode Current lox. £20 mA DC Output Current lout £25 mA DC Vec/Ground Current | lec £50 mA Power Dissipation Po_| _500(DIP)*/180(SOP)_|_mW. Storage Temperature Tstg =65~150 °C RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL UNIT Supply Voltage Vec v Input Voltage Vin v Output Voltage Vout v Operating Temperature | Topr °C 0~ 1000(V. Input Rise and Fall Time | t, tr | 0~ 500(W. ns O~ 400(V TC74HCO2AP/AF/AEN *500mW in the range of Ta= =40°C~65°C. From Ta=65°C to 85°C a derating factor of =10mW/°C shall be applied until 300mW. DC ELECTRICAL CHARACTERISTICS PARAMETER —|sywaot| ‘TEST CONDITION Vee a= 40-85"! unit (Vv) | MIN. | TyP. | MAX. | MIN. | MAX. 5 20} 150) - | — [150] — high - Level Vu a5|3is) — | = | ais} — |v Input Voltage 43) 338) — | = | RB] x 20] — | — | 030] — | 050 Low - Level Vie as} — | = [3s] = | 13s] v Input Voltage 6o| — | = | v0] — | rao 20/19 }20 | - [19] - i lov=- 20a | 45) aa fas | — [aa | = High - Level Vine = = v in 60/59 | 60 59 v Output Volt fos | Norv wxput Voltage Vor Tama ma] 45) 4.18 | 431 43) lou=—5.2ma | 60| 568 | 580 | — | 563 | — lvzana | 45| — foo | or | = | o4 Low-Level Vine [ltn20e8 | ABT = v. hn 0 oo | on oly Output Voltage ox | Vinorvie m ‘9 oc Tea ma | 45 0.17 | 0.26 033 cc=52ma_| 60| — | ore | 026 | — | 033 input Leakage Curent | Vin=Vec or GND sof [= [#01 [= [z10| Quiescent Supply Current_[ lec Vin = Vec or GND. eo[ — [= [0 | = | i00 |“ 2001-05-17TOSHIBA TC74HCO2AP/AF/AEN ‘AC ELECTRICAL CHARACTERISTICS ( C, PARAMETER symao.] TEST CONDITION MIN. Typ. | MAX. [UNIT Output Transition Time | - 4 8 Propagation Delay Time | {* - 6 2 (AC ELECTRICAL CHARACTERISTICS ( C, = 50pF, Input t,=t;=6ns) Ta = 25°C -40~85°C | PARAMETER syaaot | TEST CONDITION aah aN PE MCT RS UN ho 207 - ~s |e) - | % Output Transition Time e 45 | — 7 | 15 | - | 19 rn 6o| = | 6 | 3 | = | 6 | ns ws 20 f= | eye = fs Propagation Delay Time ue 45 _ 15 - 1 pass Y fou 60 | — a | 13 | - 16 Input Capacitance Cou = 5s | 10 | — 10 | Power Dissipation Capacitance | Cro (1) =[a;-|;-T|- |? Note (1) Cp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : lec (Opt) = Cop * Vec * fin t lec /4 (per Gate) 2001-05-17