ECSE2210,MicroelectronicsTechnology,Prof.E.F.

Schubert
Chapter22page1
Bipolar Transistor Early Effect

- Early Effect (Base-width modulation)





The Ebers-Moll model predicts a zero output conductance that is AI
C
= 0

However, a real transistor has a finite output conductance

Early effect is due to Base-width modulation

The Early voltage is a measure of the Early effect, as shown in the illustration





The Early effect takes into account difference between

W
B
and W
B
effective


W
B
= width of the n-doped base layer
W
B
effective
= neutral base width = effective base width


EB junction = forward bias W
D
does not change
CB junction = reverse bias W
D
changes with voltage
ECSE2210,MicroelectronicsTechnology,Prof.E.F.Schubert
Chapter22page2
o For a p
+
n junction, it is

D
CB
D
2
N e
V
W
c
= (1)

W
D
change with V
CB

W
B
effective
becomes narrower as V
CE
increases.

When W
B
effective
changes, then the current amplification o = B changes as well.

When W
B
effective
decreases, then the current amplification o = B increases.

Explain this dependence!


- Punch-through effect

When W
B
effective
0 then the transistor action is lost.

In this sense, the Punch-through effect is an extreme of the Early effect.