Module-2 Lecture #7 & 8 PV Technology (Applied)

Prof. Indrajit Mukhopadhyay Au 2011 indrajit.m@sse.pdpu,ac.in

Solar cell of different generation Processing of Silica to MG-Si and SC-Si

Primary requirement for a solar cell:

Bandgap between 1.1 to 1.7 eV (to absorb Visible spectrum). Direct band gap (Direct photon to exiton) of absorber Consisting of readily available, non-toxic material. Easily reproducible fabrication techniques. Also suitable for large area production. Good PV conversion efficiency. Long-term stability.

Overview of First generation Si- solar cells: It is dominant technology in the commercial production of solar cells, accounting for more than 86% of the solar cell market. Cells are typically made using a crystalline silicon wafer. Consists of a large-area, single layer p-n junction diode. Band gap ~ 1.11 eV

Tradeoffs in First generation Si- solar cells:

Si indirect bandgap material 90% absorption of spectrum requires100 m of Si while only 1 m of GaAs. Larger thickness also demand for higher quality material, generated carrier needs to diffuse longer. Diffusion length should be double of wafer thickness, at least 200 m. Si still is material of choice due to well developed micro-electronics industry

Fabrication technique: Mono (Single) crystalline solar cell: STEP-6: Wafer surface damage removal High degree of damage on wafers by sawing operation 2 problems: (i) bad surface & (ii) defects can lead to wafer fracture

So, about 10-15 m surface is etched by acid/ alkali (later preferred for easy waste disposal) in a chemical bath (temperature & composition controlled)

Thin film Solar cells Highly efficient multi-junction solar cell Concentrated Photovoltaics (CPV)