MOSIS WAFER ELECTRICAL TESTS

RUN: V11L

VENDOR: AMIS (ON-SEMI

)
TECHNOLOGY: SCN05

FEATURE SIZE: 0.5 microns

Run type: SHR

INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: SMSCN3ME06_ON-SEMI
TRANSISTOR PARAMETERS

W/L

N-CHANNEL P-CHANNEL UNITS

MINIMUM
Vth

3.0/0.6

SHORT
Idss
Vth
Vpt

20.0/0.6

WIDE
Ids0

20.0/0.6

LARGE
Vth
Vjbkd
Ijlk
Gamma

50/50

K' (Uo*Cox/2)
Low-field Mobility

0.80

-0.88 volts

460
0.70
12.5

-257
uA/um
-0.87 volts
-12.5 volts

< 2.5

< 2.5

pA/um

0.69
11.1
<50.0
0.50

-0.92
-11.7
<50.0
0.57

volts
volts
pA
V^0.5

57.1
608.53

-19.2 uA/V^2
204.62 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameter XL in your
SPICE model card.
Design Technology
XL (um) XW (um)
----------------------- -----SCMOS_SUBM (lambda=0.30)
0.10
0.00
SCMOS (lambda=0.35)
0.00
0.20
FOX TRANSISTORS
Vth
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance
Gate Oxide Thickness
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance

GATE
Poly

N+ACTIVE P+ACTIVE UNITS

>15.0
<-15.0 volts

N+
P+ N_W_U_PLY POLY PLY2_HR POLY2 M1 UNITS
84.6 108.5 847.4 23.3 1050
43.0 0.09 ohms/sq
60.5 153.4
16.1
27.0
ohms
142
angstrom
M2
0.09
0.86

M3
0.05
0.80

N_W
814

UNITS
ohms/sq
ohms

CAPACITANCE PARAMETERS N+ P+ POLY

Area (substrate)
426 717
86
Area (N+active)
2435
Area (P+active)
2356
Area (poly)
Area (poly2)
Area (metal1)
Area (metal2)
Fringe (substrate)
341 234
Fringe (poly)
Fringe (metal1)
Fringe (metal2)
Overlap (N+active)
189
Overlap (P+active)
229
CIRCUIT PARAMETERS
Inverters
Vinv
Vinv
Vol
Voh
Vinv
Gain
Ring Oscillator Freq.
DIV256 (31-stg,5.0V)
D256_WIDE (31-stg,5.0V)
Ring Oscillator Power
DIV256 (31-stg,5.0V)
D256_WIDE (31-stg,5.0V)
COMMENTS: SUBMICRON

POLY2

M1
29
37

M2
12
16

M3
8
12

903

68
58

15

29

12
32

38
49

27
34
51

48
69

UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0

2.05
2.30
0.46
4.46
2.48
-18.76

volts
volts
volts
volts
volts

99.53 MHz
150.35 MHz
0.50 uW/MHz/gate
1.02 uW/MHz/gate

N_W
92

UNITS
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um
aF/um
aF/um
aF/um
aF/um
aF/um

V11L SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: Oct 13/11
* LOT: V11L
WAF:
* Temperature_parameters=Default
.MODEL CMOSN NMOS (
+VERSION = 3.1
TNOM
+XJ
= 1.5E-7
NCH
+K1
= 0.8687083
K2
+K3B
= -8.3384039
W0
+DVT0W = 0
DVT1W
+DVT0
= 0.8009049
DVT1
+U0
= 454.5474058
UA
+UC
= 1.86643E-12
VSAT
+AGS
= 0.1320018
B0
+KETA
= -7.503206E-3 A1
+RDSW
= 1.171934E3
PRWG
+WR
= 1
WINT
+XL
= 1E-7
XW
+DWB
= 2.934613E-8
VOFF
+CIT
= 0
CDSC
+CDSCB = 0
ETA0
+DSUB
= 0.0653362
PCLM
+PDIBLC2 = 2.116916E-3
PDIBLCB
+PSCBE1 = 8E10
PSCBE2
+DELTA = 0.01
RSH
+PRT
= 0
UTE
+KT1L
= 0
KT2
+UB1
= -7.61E-18
UC1
+WL
= 0
WLN
+WWN
= 1
WWL
+LLN
= 1
LW
+LWL
= 0
CAPMOD
+CGDO
= 1.89E-10
CGSO
+CJ
= 4.261755E-4
PB
+CJSW
= 3.344281E-10 PBSW
+CJSWG = 1.64E-10
PBSWG
+CF
= 0
PVTH0
+PK2
= -0.0754049
WKETA
*
.MODEL CMOSP PMOS (
+VERSION = 3.1
TNOM
+XJ
= 1.5E-7
NCH
+K1
= 0.553472
K2
+K3B
= 0.024928
W0
+DVT0W = 0
DVT1W
+DVT0
= 0.562667
DVT1
+U0
= 201.3603195
UA
+UC
= -1E-10
VSAT
+AGS
= 0.1081785
B0
+KETA
= -4.865785E-3 A1
+RDSW
= 3E3
PRWG
+WR
= 1
WINT
+XL
= 1E-7
XW
+DWB
= -1.051717E-8 VOFF
+CIT
= 0
CDSC
+CDSCB = 0
ETA0
+DSUB
= 1
PCLM

7197
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

27
1.7E17
-0.0852395
1E-8
0
0.3971616
1E-13
1.982902E5
1.292393E-6
1.298492E-4
0.0866685
1.755035E-7
0
-1.366211E-4
2.4E-4
2.804673E-3
2.1480697
0.1047169
1.502056E-8
84.6
-1.5
0.022
-5.6E-11
1
0
0
2
1.89E-10
0.8482016
0.8
0.8
3.249769E-3
2.503364E-3

LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

49
1.42E-8
0.6411523
26.1121444
1.063778E-9
0
-0.5
1.41332E-18
0.8107957
5E-6
0.3
-0.0189653
8.705476E-8
2.219467E-9
0.8108577
0
-3.229532E-4
5.881068E-4
3.45494E-3
0
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-9
0.4326766
0.2019414
0.2019414
230.9847454
3.606834E-3

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

27
1.7E17
7.871921E-3
1E-8
0
0.3064583
2.408572E-9
7.762453E4
5.611458E-7
1.363859E-3
-0.0260688
2.370297E-7
0
-0.0620394
2.4E-4
3.81997E-4
2.4172623

LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

49
1.42E-8
-0.9152268
1.4894229
1.002614E-9
0
-0.3
1E-21
0.7616978
7.767182E-9
0.7560318
-0.0518397
1.270513E-7
5.805442E-9
0.8999885
0
-0.2
0.0414719

+PDIBLC2
+PSCBE1
+DELTA
+PRT
+KT1L
+UB1
+WL
+WWN
+LLN
+LWL
+CGDO
+CJ
+CJSW
+CJSWG
+CF
+PK2
*

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

3.120264E-3
1E8
0.01
0
0
-7.61E-18
0
1
1
0
2.29E-10
7.149816E-4
2.372517E-10
6.4E-11
0
3.73981E-3

PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
PVTH0
WKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

-0.0366384
3.394931E-9
108.5
-1.5
0.022
-5.6E-11
1
0
0
2
2.29E-10
0.8791663
0.8
0.8
5.98016E-3
1.236911E-3

DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

0.249426
2.957943E-3
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-9
0.4854245
0.2261452
0.2261452
14.8598424
-9.223727E-3