BAT14...

Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type




1

BAT14-03W

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type BAT14-03W Package SOD323 Configuration single LS(nH) Marking 1.8 O/white

Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value Unit

Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature
Thermal Resistance Parameter TS

4 90 100 150 -55 ... 125 -55 ... 150

V mA mW C

85 C

1For

calculation of RthJA please refer to Application Note Thermal Resistance

Junction - soldering point1)

Value

Unit

690

K/W

Feb-03-2003

BAT14...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 10 A Forward voltage IF = 1 mA IF = 10 mA
AC Characteristics Diode capacitance VR = 0 , f = 1 MHz IF = 10mA / 50mA Differential forward resistance CT RF 0.22 5.5 0.35 pF

Symbol min. V(BR) VF 0.36 0.48 4

Values typ. max. -

Unit

0.43 0.55

0.52 0.66

Feb-03-2003

BAT14...
Diode capacitance CT = f = 1MHz
0.5
pF

TA = Parameter
10 1
A

0.4 10 0.35

CT

0.3 0.25 0.2 0.15 0.1 0.05 0 0

V

IR

10 -1

10 -2

0.5

1.5

2.5

3.5

10 -3 1

1.5

2.5

VF

10
mA

10

IF

10

10

-1

10

-2

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

Forward current IF =

(V F)

-40C 25C 85C 125C

VF

(VR )

Reverse current IR =

(VR)



TA =125C

TA =85C

TA =25C

3.5

4.5

5.5

VR

Feb-03-2003