Beruflich Dokumente
Kultur Dokumente
FEATURES
•High power and High Gain:
24.0+/-0.6
10.0+/-0.3
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz 2
•High Efficiency: 60%typ.on VHF Band +0.05
R1.6+/-0.15 0.1 -0.01
•High Efficiency: 55%typ.on UHF Band 3
4.5+/-0.7
5.0+/-0.3
APPLICATION 6.2+/-0.7
18.0+/-0.3
For output stage of high power amplifiers in VHF/UHF
PIN
Band mobile radio sets. 1.Drain
2.Source
3.Gate
3.3+/-0.2
UNIT:mm
1/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
8
120
100 6
Pch(W)
Ids(A)
80
60 4
40
2
20
0 0
0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
AMBIENT TEMPERATURE Ta(°C) Vgs(V)
Vgs=3.4V 200
Ids(A)
150
4 Vgs=3.1V
100
2 Vgs=2.8V
50
Vgs=2.5V
0 0
Vgs=2.2V
0 2 4 6 8 10 0 5 10 15 20
Vds(V) Vds(V)
200 20
Coss(pF)
Crss(pF)
150 15
100 10
50 5
0 0
0 5 10 15 20 0 5 10 15 20
Vds(V) Vds(V)
2/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
40 Idq=2A 80
Pout(W) , Idd(A)
ηd
ηd 60 60
ηd(%)
ηd(%)
Idd(A)
30 60
Gp
40 Ta=25°C 40
20 40 f=175MHz
Vdd=12.5V
10 20 20 Idd
Idq=2A 20
Idd
0 0 0 0
10 20 30 40 0 2 4 6 8 10
Pin(dBm) Pin(W)
ηd
Pout(W) , Idd(A)
Idq=2A 50 50
ηd
30 60
ηd(%)
40 40
ηd(%)
Idd(A)
20 40 30 Ta=25°C 30
Gp f=520MHz
20 Vdd=12.5V 20
Idd
10 20 Idd Idq=2A
10 10
0 0 0 0
10 20 30 40 0 5 10 15 20 25
Pin(dBm) Pin(W)
Idd(A)
Po(W)
Po(W)
Idd 10 40 6
40 8
6 30 4
20 4 20 2
2
0 0 10 0
4 6 8 10 12 14 4 6 8 10 12 14
Vdd(V) Vdd(V)
3/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
6
Ids(A)
4
+75°C
2
-25°C
0
2 2.5 3 3.5 4
Vgs(V)
TEST CIRCUIT(f=175MHz)
V gg V dd
C1 9.1K OHM
L2 C3
8.2k OHM C2
100O HM 100pF
RD70HV F 1
175M Hz L1
56pF
72pF
RF -IN RF -O UT
56pF 56pF
100pF
14
10 10
21 21
43 41
150 130
150
4/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TEST CIRCUIT(f=520MHz)
V gg V dd
C1 9.1K OHM
L1
C3
RD70HV F 1
L1 L2
520M Hz
RF -IN RF -O UT
56pF 56pF
14
12 8
50 18
55 38
80 88
90 100
100
5/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
Zo=10Ω
f=135MHz Zout
f=175MHz Zout
f=175MHz Zin
f=135MHz Zin
Zin, Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
135 0.43-j3.19 0.70+j0.25 Po=90W, Vdd=12.5V,Pin=6W
175 0.55-j2.53 0.72-j0.36 Po=80W, Vdd=12.5V,Pin=6W
f=520MHz Zout
Zo=10Ω
f=520MHz Zin
f=440MHz Zout
f=440MHz Zin
Zin, Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
440 0.74-j0.34 0.71-j0.18 Po=60W, Vdd=12.5V,Pin=10W
520 1.04+j0.63 0.93+j1.62 Po=55W, Vdd=12.5V,Pin=10W
6/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
7/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
8/8