I 40 100 5

Journal of National Kaohsiung University of Applied Sciences, Vol. 40 (2011)

CONTENTS

The Study of Zhang Xue Chengs "Zhe Dong Xue Shu" Huang, Yong-Zhong
IC

25

Analysis of forming for cutting and bending leadframe of IC package and die design
Chao-Ho HsuSu-Guang Lin

45

The Effects of Multimedia Annotations on Taiwanese EFL Learners Vocabulary Learning

Yi-Chuan HsiehWaiting Chen

73

The Research of Zhou Yuan Warfare and Sacrificed Ceremonies Oracle Bone Inscriptions
Hui-Hsien Peng

99

Applying the fuzzy theory and modified genetic algorithm for multi-objective problem in supply
chain Yu-Shian LiShih-Tao Huang

125
A Path Analytical Model of Cross-Cultural Training, Expatriate Adjustment, and Expatriate
Performance:A Survey of Taiwanese Expatriates in ChinaYung-Ming Cheng
QFN

157

The Investigation of Residual Glue Phenomena of Thermoplastic Tapes of QFN Package in the
Semiconductor Device ProcessingJia-Long LiuChen-Yan Huang
Xiu-Ting HongYi-Xuan WangKent-Ting LiuChing-Guey TsengWen-Chung Ou-Yang
P7 3C 175
Planning New-type 3C Hypermarket Services by P7 and Rough Set Analysis
Ching-Fang LeeShiou-Wen JengYow-Mow Chen

Contents

II

197

Curriculum Design for Freshman EnglishAn Analysis of Technological University Freshmens

PerceptionsPei-Ling Wang, Ya-Fen Lo, Chuen-Maan Sheu, Lina Hsu

223

The Effect of Relation Proneness, Switching cost and Product Category on Customer Retentions
Hsiao-Ching LeeKai-Jie Zhou

243

Transient Behavior of Grid-Connected Photovoltaic Power SystemsL.-C. Liao M.-J. ChenY.-C. Wu

253

Fabrication of Wind Turbine and Solar Hybrid Power Conversion System

Wen-Feng KuoShun-Ching Lee
Novel Sufficient LMI Conditions for Static Output Feedback Stabilization of Proper Linear Systems

Ching-Hsiang Lee

263

281

The Effects of Operating Conditions of Sputtering on the characteristics of Al2O3-doped ZnO

Transparent Conducting FilmSheng-Yu WangCheng-Hsien Tsai

II


QFN

QFN

(Jia-Long Liu)(Chen-Yan Huang)(Xiu-Ting Hong)

(Yi-Xuan Wang)(Kent-Ting Liu)(Ching-Guey Tseng)
(Wen-Chung Ou-Yang)

(Quad Flat No Leads, QFN)

(cohesive failure) S4

QFN

QFN

157

 40

(Die Paddle)

PDA
MP3

QFN 3x3mm ~

IC

10x10mm

BLP (Bottom- Leaded

IC

Plastic Package) PCC (Plastic Chip

IC

Carrier)MSMT (Chip Scales Micro SMT

Package) BCC (Bump Chip

Carrier)

QFN BGA (Ball Grid Array)

(Junction to ambient thermal

QFN (quad flat

resistance, Theta JA) 1

no-lead package) 1 CSP

QFN BGA

(Chip Scale Package)

1. (QFN BGA)QFN BGA

Package type

structure

Management

Theta JA

BCC++ 32L
-excellent
(Bump Chip Carrier
-chipD/APCB
32 Leads)

158

26.2 /W


QFN

QFN 32L
-excellent
(Quad Flat No leads

27.3 /W

-chipDie padPCB
32 Leads)
EP_TQFP 32L
-excellent
(Thin Profile Quad

27.6 /W

-chipDie PadPCB
Flat Pack 32 Leads)
LGA 32L

-BGA series

(Land Grid Array 32

-poor

Leads)

-chipsubstratePCB

52.5 /W

TSSOP Thin-Shrink

Small Outline Package 2

DQFN TSSOP 62

55

DQFN (Depopulated

60 304

Very-Thin Quad Flat-Pack No-Leads)

1. QFN
159

 40

2. DQFN TSSOP [4]

Reliability

QFN

2-1

(PI)(base)

12%10%8% 2%

(Tack)(Adhesion)(Cohesion)

S1S2S3 S4 3

(Anchorage)

50m 2

S4

>>>

160


QFN

Cover film thickness:38

Adhesive thickness:6
PI base film thickness :25
3. (PI) base

2. S4
Unit

MDa

TDb

Test Condition

Tensile Modulus

kg/mm

470

ASTM D-882

Tensile Strength

kg/mm

28.1

29.1

ASTM D-882

Elongation

90

82

ASTM D-882

Thermal Expansion

0.07

0.05

200, 1 hr

ppm/

15.8

10.9

TMA 100~200

Moisture Absorption

1.2

1.2

25,50~60%RH, 24hr

Degradation Temp.

> 580

> 580

TGA

Glass Transition Temp.

390~400

390~400

DSC

Breakdown Voltage

kV

7.1

7.1

200, 30hr

W/m-

0.38

0.38

ASTM F-433-77

Corona

Corona

Property

Coefficients of Thermal
Expansion

Thermal Conductivity
Surface Treatment

a: Machine Direction, b: Transverse Direction

Spectrometer, FTIR) Perkin-Elmer 16

2-2

PC FTIR 7

(Infrared

400~4000cm-1

161

 40

2-3

(Td)

2-4

3~5mg

20/min 20ml/min

50~600

DuPont TA Instrument Co.-TGA 2050

(TGA)8

Surface Oxide
Hydrocarbon Contamination

4.

162


QFN

(n+4m) O2 (g)+ 4CmHn (s)

e- + O2 (g)

4mCO2 (g) + 2nH2O (g)

2O(g)+ e-

Ar (g) + aCxHy (s)

bCrHs (s) +Ar (g)

zO (g) + wO2 (g)+CF4 (g) +CrHs (s)

CO (g) +CrHs-6Oz+2w-2 (g) + H2O (g) +4HF (g)

ESCA

Model: PHI 5000 Versa Probe9

10 S1

S2S3 S4

5. (cohesion failure)

2-5

126

(cohesion failure) 5

(Ra)

11

163

 40

6. 7.

(S1, S2, S3 S4) FTIR

3-1(Infrared Spectrometer,

FTIR)

FTIR

1700cm-1 C=O
3100~3000cm-1 (aromatic) C-H

8. FTIR
164


QFN

Td,S3=380.1Td,S4=412.6

3-2 (Thermogravimetric
Analysis, TGA)

S1S2S3S4 12%10%

9~12

8% 2%

5%(Td)

S4

Td,S1=375.8Td,S2=378.4

98.00

S1

96.00
94.00

35.40min
375.8
95.04%

92.00
88.00
86.00
84.00
82.00
80.00
78.00
76.00
74.00

375.85

72.00
70.00
68.00
66.00

5 0 . 0 1 00 . 0

1 5 0 .0

2 00 . 0

2 5 0. 0 30 0 . 0 3 5 0. 0
Temperature ()

400.0

9. S1 TGA

165

4 50 . 0

500.0

5 50 . 0

Weight ()

90.00

 40

98.00

S2

96.00
94.00
92.00

35.40min
378.4
94.95%

90.00
86.00
84.00
82.00

Weight ()

88.00

80.00
78.00
76.00
74.00

378.45

72.00
70.00
68.00
66.00

5 0 . 0 1 00 . 0

1 50 . 0

20 0 .0

2 50 . 0

30 0 .0

3 5 0. 0

4 0 0. 0

4 50 . 0

50 0 .0

5 5 0. 0

Temperature ()

10. S2 TGA

98.00

S3

96.00
94.00

35.70min
380.1
95.02%

92.00
90.00

86.00
84.00
82.00
80.00
78.00

380.15

76.00
74.00
72.00
70.00

5 0 .0

10 0 .0

15 0. 0

20 0. 0

2 50 .0 30 0 .0 35 0. 0
Temperature ()

40 0. 0

4 50 . 0

11. S3 TGA
166

5 00 .0

5 50 . 0

Weight ()

88.00


QFN

98.00

S4

96.00
94.00

39.68 min
412.6
95.00%

92.00
88.00
86.00
84.00
82.00

Weight ()

90.00

80.00
78.00
76.00

412.65

74.00
72.00
70.00
68.00

5 0 .0 1 0 0. 0

15 0. 0

20 0. 0

2 50 . 0

3 00 . 0 3 5 0. 0
Temperature ()

4 0 0. 0

4 5 0. 0

5 0 0. 0

5 5 0. 0

12. S4 TGA

3 1% 10 0%

3-3
13

73.4 94.0%

14 3

C 22.1 4.4%

167

 40

13.

14.

168


QFN

3. (wt.%)
C

Cu

Au

22.10

10

0.60

73.40

4.40

0.40

94.00

0.23~0.52

3-4
15

0.8 0.3 4

() Ra

15.

4
(m)

(m)

Max

0.16

0.12

Min

0.08

0.09

Std

0.8

0.3

16

(Ra)2.4~6.38

(Ra) 5.01~5.46

3.98 2.61
169

 40

(cohesive failure)

Tape(Before treatment)

Tape(Plasma treatment)

Ra: 5.015.46

Ra: 2.406.38

16.

3-5

S1S2S3S4

S4 17

17.

S3

18

19

170


QFN

10

(gf/25mm)

y=-0.0007x3+0.0381x2-0.2003x+0.3372

R2=0.994

8
7
6
5
4
3
2
1
0

10

15

20

25

30

(min.)
18.

19.
S4

QFN

S4

QFN

171

 40

(PE-b-PMMA)

1
IC

117 121~125 1996

812008

9/

2IC 38

21~27 2006

11~152001

10
BGA

7~9 2005

4Depopulated Very-thin Quad Flat-pack

No-leads (DQFN) (n. d.). Retrieved

8~102003

February 8, 2011, from

11Gersappe, Dilip; Robbins, MarkO,

http://ics.nxp.com/packaging/dqfn/

Adhesive vs. Cohesive Failure in

5TAC

Polymer Adhesives, MAR. N3001G,

APS, American Physical Society,

Annual March Meeting, Abstract

19~24 2009

#N30. 01, Mar. 1997.

12

6D. Satas, Handbook of

100 3 7

Pressure-Sensitive Adhesive

http://www.scribd.com/doc/3761082/

Technology, 2nd ed., Van Nostrand

20080701168

Reinhold Company, NY, 1989.

7
/

90~922004
172


QFN

The Investigation of Residual Glue Phenomena of Thermoplastic

Tapes of QFN Package in the Semiconductor Device Processing

Abstract
This research has studied the residual glue phenomena of thermoplastic tapes of QFN
package in the semiconductor device processing, those tapes with different amount of acrylic
acid have different amount of residual glue. By the experiment, the period of plasma
cleaning can influence the amount of residue on the interface between the tape and the base.
Among the samples, Tape S4 with the least amount of acrylic acid has not only the more
thermo stable characteristic but also the least residual glue. We hope to provide an effective
way for reference to find a more thermo stable thermoplastic tape. Consequently, the
performance of QFN package could have better characteristics such as good reliability, strong
adhesive force, less residue on surface and good appearance.

KeywordsQFN (Quad Flat No Lead), plasma cleaning, residue on surface, thermoplastic

173

 40

174