BJT TIme Analysis

Digital Integrated Circuit Design
Lecture 6 BJT Inverter Switching Times

5 5m s
V i (t )
to
V o (t )
5
0.1
t1
t4 t6 t3 t5
t2
Adib Abrishamifar EE Department IUST
Contents
}
} } } } } }
BJT Inverter
Cutoff Region (to t1) Active Region (t1 t2) Saturation Region (t3 t4) Active Region (t4 t5) Recovery Region (t5 t6) Propagation Delay Time
} } }
Definition of a parameter Power Delay Product Summary

2/30 LECTURE 6 : BJT Inverter Switching Times Adib Abrishamifar 2008
IUST: Digital IC Design
BJT Inverter
+5
o
RC = 1K R B = 10K
V i (t )
V i (t )
5 5m s
V o (t )
to
V o (t )
5
0.1
t1
t4 t6 t3 t5
t2
VBE(on) = 0.7V VBE(sat) = 0.8V VCE(sat) = 0.1V C jeo = 0.3PF F e = 0.9V m e = 0.5
t F = 0.2nsec t BF = 14nsec t s = 20nsec

C jco = 0.15PF F c = 0.7V mc = 0.33
3/30
t1 - t o = t d = Delay Time t 2 - t1 = t f = Fall Time t 4 - t 3 = t s = Saturation Time t 5 - t 4 = t r = Rise Time t 6 - t 5 = t fr = Final Recovery Time
Adib Abrishamifar 2008
LECTURE 6 : BJT Inverter Switching Times
BJT Inverter Switching Time

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BJT Inverter
} } }

Cutoff Region (to t1)

d Q F , Q R o i B (t) = (Q VE + Q VC ) dt VBE (t o ) = 0V VBE (t1 ) = 0.7V VBC (t o ) = 0 - 5 = -5V VBC (t1 ) = 0.7 - 5 = -4.3V
iC
iB
Q VC
Q VE
iE
5/30

5-0 i B (t o ) = = 0.5mA 10K 5 - 0.7 i B (t1 ) = = 0.43mA 10K 0.5 + 0.43 iB = = 0.465mA 2 d i B (t) = ( QVE + QVC ) dt
t1 to
+5
RC = 1K
R B = 10K
V o (t )
V i (t )
(t)dt = [ QVE (t1 ) - QVE (to ) ] + [ QVC (t1 ) - QVC (to ) ]
6/30

DQVE = QVE (t1 ) - QVE (to ) = Ceq .DVBE Ceq = -C jeo V (t ) 1- me V (t ) 1- me Fe 1 - BE 1 - 1 - BE o DVBE (1 - me ) Fe Fe
+5
RC = 1K
1/2 1/2 -0.3 0.9 0.7 0 = - 11 0.408PF ( 0.7 - 0 )(1 2 ) 0.9 0.9
Q VE = 0.408PF 0.7V = 0.285PC

R B = 10K
V o (t )
V i (t )
7/30

DQVC = Ceq .DVBC
2/3 2/3 0.15 0.7 4.3 5 Ceq = 1+ - 1+ 0.076PF ( -4.3 + 5)( 2 3) 0.7 0.7
Q VC = 0.076PF 0.7V = 0.053PC
to
( 0.456mA ) dt = 0.285 + 0.053 = 0.338PC

V i (t )
t1
5
o
to
0.338PC t1 - t o = t d = = 0.73nsec 0.465mA
5ms
t1 t2
t3
o
t 4 t5 t6
V o (t )
5
0.1
8/30

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BJT Inverter
} } }

Active Region (t1 t2)

i B (t) = QF d + (Q F + Q VC + Q VE ) BF dt
iC iB
V BE QF Q VC
QF
VBE(on) VBE(sat) VCE = VCC VCE = VCEsat VBE (t 2 ) = 0.8V VBC (t 2 ) = 0.8 - 0.1 = 0.7V
t tf
Q VE
iE
IUST: Digital IC Design 10/30 LECTURE 6 : BJT Inverter Switching Times Adib Abrishamifar 2008

i B (t1 ) = 5 - 0.7 = 0.43mA 10K 5 - 0.8 i B (t 2 ) = = 0.42mA 10K 0.43 + 0.42 iB = = 0.425mA 2 Q d i B (t) = F + (Q F + Q VC + Q VE ) BF dt
t2
+5
RC =1K
R B = 10K
V o (t )
V i (t )
1 2 i B (t)dt = BF QF (t)dt + DQ F + DQVE + DQVC t1 t1
Q F (t2 ) = I C F = ( 4.9mA )( 0.2n sec ) = 0.98 PC Q F (t1 ) = 0 , I C (t1 ) = 0

IUST: Digital IC Design 11/30
DQ F = Q F (t2 ) - Q F (t1 )
DQ F = 0.98 PC
LECTURE 6 : BJT Inverter Switching Times Adib Abrishamifar 2008

DQVE = QVE (t1 ) - QVE (to ) = Ceq .DVBE
1/2 1/2 -0.3 0.9 0.8 0.7 = - 1 1 = 0.745PF ( 0.8 - 0.7 )(1 2 ) 0.9 0.9
Q VE = 0.745PF 0.1V = 0.075PC DQVC = Ceq .DVBC 0.7 2/3 4.3 2/3 0.15 0.7 - 1+ Ceq = 1 = 0.117PF ( 0.7 + 4.3)( 2 3) 0.7 0.7 Q VC = 0.1176PF 5.0V = 0.584PC By neglecting the recombination term:
t2
5
o
to
V i (t )
5ms
t1
( 0.425mA ) dt = 0.98 + 0.075 + 0.584 = 1.64PC

t1
t3
o
t 4 t5 t6
t2 - t1 = t f =
1.64 PC = 3.9n sec 0.425mA

12/30
V o (t )
5
0.1
t2

} Now to include the recombination term, we assume a linear increase in QF from t1 to t2
QF
t2
( 0.98PC )(t 2 - t1 ) + 1.64PC 1 ( 0.425mA ) dt = 14n sec 2 t1

1.64PC = 4.2n sec ( 0.425 - 0.035) mA
0.98
0
t 2 - t1 = t f =
t1
}
t2
Note: The loss of carrier by recombination results in an increase in the fall time

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BJT Inverter
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Saturation Region (t3 t4)

} Input pulse is wide and td + tf = 4.9ns then transistor reaches to steady state saturation
i BF I C Qs = bF t s (I )
5
o
i BF
t3
Step in t 3 : i BR I Q dQ - C = s + s dt bF t s IC ) + Ke -t t s bF
i BR
0.8V
Q s (t ) = t s (i BR -
(I ) Q s (t 3 ) = t s (i BF K = t s (i BF - i BR )
IUST: Digital IC Design 15/30
IC I ) = t s (i BR - C ) + K bF bF
Saturation Region (t3 t4)

I Q s (t ) = t s (i BR - C ) + ( i BF - i BR ) e -t t s bF t = t 4 Qs o t 4 - t 3 = t s = t s Ln i BF = i BF - i BR ( I C b F ) - i BR
5 - 0.8 = 0.42mA 10K 0 - 0.8 = -0.08mA i BR = 10K t 14 b F = BF = = 70 tF 0.2 t s = 20Ln 0.42 + 0.08 = 24n sec ( 4.9 70 ) + 0.08
V i (t )
to
5 5m s
t1 t2
t3
o
t 4 t5 t 6
V o (t )
5
0.1
16/30

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BJT Inverter
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QF d i B (t) = + (Q F + Q VC + Q VE ) BF dt 1 5 iB (t)dt = BF t QF (t)dt + DQ F + DQVE + DQVC t4 4 During Turn Off DQtot = -DQtot (During Turn-on) 0 - 0.8 i B (t 4 ) = = -0.08mA 10K 0 - 0.7 i B (t 5 ) = = -0.07mA 10K iB = -0.075mA
t5

By neglecting recombination term :
t5
t4
(-0.075mA)dt = -1.64PC
V i (t )
to
5 5m s
t1 t2
t3
o
t 4 t5 t 6
-1.64PC t5 -t4 = tr = = 22n sec -0.075mA Including the recombination term and assuming a linear decrease of Q R : t5 -t4 = tr =
V o (t )
5
0.1
-1.64PC = 15n sec -(0.075 + 0.035)mA Note that the recombination can be a
substantial aid in the removal of charge from the base.


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BJT Inverter
} } }

Recovery Region (t5 t6)

} This situation is similar to the initial delay time prior to turn on
0 - 0.7 = -0.07mA 10K i B (t 6 ) = 0mA i B (t 5 ) = iB = -0.035mA DQVC + DQVE = -0.338PC -0.338PC = 9.7n sec t6 - t5 = tf r = -0.035mA
V i (t )
to
5 5ms
t1 t2
t3
o
t 4 t5 t 6
V o (t )
5
0.1
21/30

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BJT Inverter
} } }

Propagation Delay Time

t PHL = t d + t f /2 = 0.73 + 4.2/2 = 2.8nsec t PLH = t s + t r /2 = 24 + 15/2 = 31.5nsec >> t PHL tP = t PHL + t PLH 2.8 + 31.5 = = 17.15n sec 2 2 V
in
} This indicates that the saturation time is a very large fraction of the total time Vout
50%
tpHL
tpLH
t
90%
50%
10%
t
tr
23/30
tf

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BJT Inverter
} } }

Definition of a parameter
ts = ?
(Before) Q F = I CFt tF , Q R = I ERt tR I B = I Bsat + I BS , I BS = Excess base current (Now) Q a = I Csatt tF , Q s = I BSt s dQ a = 0 (In saturation) dt Q Q Q dQ R iC = F - R - R t tF t tR t BR dt I BS = Q s dQ s + ts dt
E B C
E Qactive B C
QF QR
0 w
0
QS w Forward Reverse
a F = 0.98 , a R = 0.5 , t tF = 0.2n sec , t tR = 20n sec t s 20n sec

By manipulating these equations: a (t + a Rt tR ) t s = F tF 1 - a Fa R
Forward Reverse

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BJT Inverter
} } }

Power Delay Product

1 1 t Pd = ( t PHL + t PLH ) = ( 2.8 + 31.5 ) = 17.15n sec 2 2 PdL = Pd V in =o = 0 PdH =V cc I Csat +V IH I IH V IH = Calculated for connecting the output to only one input V IH 5 - 0.8 = K 10K + 0.8 = 4.618 V K 1 + 10
27/30
Power Delay Product

5 - 0.2 I Csat = K = 4.8mA 1 V IH - 0.8 I IH = = 0.3818mA K 10 PdisH = 5V 4.8mA + 4.618V 0.3818mA PdisH = 25.76mW Pd = 12.882mW
} This is very high.
Pd = 1 2 ( PdL + PdH

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BJT Inverter
} } }

Summary
} In this lecture the switching times of the bipolar transistor were first described } Delays in all of mode were calculated } Saturation time is very large fraction of total times } Propagation delay time was calculated } Finally power delay product was calculated which was very high
30/30

BJT TIme Analysis

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Digital Integrated Circuit Design

Lecture 6 BJT Inverter Switching Times

Adib Abrishamifar EE Department IUST

Definition of a parameter Power Delay Product Summary

IUST: Digital IC Design

t F = 0.2nsec t BF = 14nsec t s = 20nsec

LECTURE 6 : BJT Inverter Switching Times

BJT Inverter Switching Time

Definition of a parameter Power Delay Product Summary

IUST: Digital IC Design

Cutoff Region (to t1)

IUST: Digital IC Design

LECTURE 6 : BJT Inverter Switching Times

Adib Abrishamifar 2008

Cutoff Region (to t1)

(t)dt = [ QVE (t1 ) - QVE (to ) ] + [ QVC (t1 ) - QVC (to ) ]

IUST: Digital IC Design

LECTURE 6 : BJT Inverter Switching Times

Adib Abrishamifar 2008

Cutoff Region (to t1)

Q VE = 0.408PF 0.7V = 0.285PC

IUST: Digital IC Design

LECTURE 6 : BJT Inverter Switching Times

Adib Abrishamifar 2008

Cutoff Region (to t1)

Q VC = 0.076PF 0.7V = 0.053PC

( 0.456mA ) dt = 0.285 + 0.053 = 0.338PC

0.338PC t1 - t o = t d = = 0.73nsec 0.465mA

IUST: Digital IC Design

LECTURE 6 : BJT Inverter Switching Times

Adib Abrishamifar 2008

BJT Inverter Switching Time

Definition of a parameter Power Delay Product Summary

IUST: Digital IC Design

Active Region (t1 t2)

Active Region (t1 t2)

1 2 i B (t)dt = BF QF (t)dt + DQ F + DQVE + DQVC t1 t1

Q F (t2 ) = I C F = ( 4.9mA )( 0.2n sec ) = 0.98 PC Q F (t1 ) = 0 , I C (t1 ) = 0

Active Region (t1 t2)

( 0.425mA ) dt = 0.98 + 0.075 + 0.584 = 1.64PC

1.64 PC = 3.9n sec 0.425mA

IUST: Digital IC Design

LECTURE 6 : BJT Inverter Switching Times

Adib Abrishamifar 2008

Active Region (t1 t2)

( 0.98PC )(t 2 - t1 ) + 1.64PC 1 ( 0.425mA ) dt = 14n sec 2 t1

IUST: Digital IC Design

BJT Inverter Switching Time

Definition of a parameter Power Delay Product Summary

IUST: Digital IC Design

Saturation Region (t3 t4)

LECTURE 6 : BJT Inverter Switching Times

Adib Abrishamifar 2008

Saturation Region (t3 t4)

IUST: Digital IC Design

LECTURE 6 : BJT Inverter Switching Times

Adib Abrishamifar 2008

BJT Inverter Switching Time

Definition of a parameter Power Delay Product Summary

IUST: Digital IC Design

Active Region (t4 t5)

Active Region (t4 t5)

substantial aid in the removal of charge from the base.

BJT Inverter Switching Time