Prepared by: Kenneth Joachim Llanto Last Updated: 06/21/11

Construction and operation, characteristic curve Diode Equivalent Model Diode Circuit Analysis Light Emitting Diode Zener Diode

Some electrons will cross the junction and fill holes

A pair of ions is created each time this happens As this ion charge builds up, it prevents further charge migration across the junction

Depletion layer

These ions create a potential Difference called barrier potential Silicon = 0.7 V; Germanium = 0.3 V GaAs = 1.2 V

Reverse-Bias Condition (VD < 0 V)

This results to a wider depletion region +

Reverse-Bias Condition (VD < 0 V)

Forward-Bias Condition (VD > 0 V)

Silicon = 0.7 V; Germanium = 0.3 V GaAs = 1.2 V

Carriers diffuse through depletion region and across the junction, producing current +

Forward-Bias Condition (VD > 0 V)

A characteristic curve defines the operating conditions of a device from several input parameters that provide a given output value. It is a plot of the input/output relationships ofa device.

The diode conducts once the Breakdown voltage is exceeded

The Diode Starts to conduct when the barrier voltage is reached

leakage current

Breakdown Voltage

Voltage that causes Avalanche, reverse voltage becomes too excessive causing the free electrons on the p side to be accelerated

Leakage Current
A small reverse current exists at reverse bias brought about by the minority carriers. Increases with temperature

This represents the diode as being ideal. The first approximation ignores :
leakage current barrier potential bulk resistance.

When an ideal diode is reverse biased, the model is an open switch

Reverse bias

Forward bias

When an ideal diode is forward biased, the model is a closed switch.

This model assumes that no diode current flows until the forward bias across the diode reaches 0.7 volts (For Si). This model ignores :
exact shape of the knee. bulk resistance.

0.7 V

Reverse bias
0.7 V

Forward bias

This model assumes that no diode current flows until the forward bias across the diode reaches 0.7

volts (for Si).

This model ignores :

exact shape of the knee.

0.7 V

RB

Reverse bias
0.7 V RB

Forward bias

RB = V / I
A silicon diode has a forward voltage drop of 2.0 v for a forward diode with Current of 1.5 A. Calculate the RB

RB

2.0 0.7
= 1.5 0.0 =

1.3
1.5

0.867 ohms

Solve for the load voltage and current using first, second and third approximations. Use Si RB = 3.1 ohms diode

VIN = 18 V

RL = 220 ohms

Solve for the load voltage and current using first, second and third approximations. Use Si RB = 2.5 ohms diode

VIN = 25 V

RL = 1000 ohms

Solve for the load voltage and current using first, second and third approximations. Use Si RB = 3.1 ohms diode
VIN = 18 V RL = 220 ohms

1st Approx: VL = 18 V , IL = 81 mA 2nd Approx: VL = 17.3 V , IL = 78.6 mA 3rd Approx: VL = 17.1 V , IL = 77.5 mA

Solve for the load voltage and current using first, second and third approximations. Use Si RB = 2.5 ohms diode
VIN = 25 V

RL = 1000 ohms

1st Approx: VL = 25 V , IL = 25 mA 2nd Approx: VL = 24.3 V , IL = 24.3 mA 3rd Approx: VL = 24.2 V , IL = 24.2 mA

Lecture notes by Engr. Emmanuel Guevara Lecture notes by Engr. Angelo dela Cruz Electronic Devices and Circuit Theory by Boylestad and Nashelsky Grobs Basic Electronics by Schultz Electronic Principles by Malvino and Bates