Oxidation Public Process

This oxide layer of insulation will prevent pollutants and acts as a mask to prevent impurities from diffusing into the layer epitaxial The nature of silicon dioxide having a high dielectric value (3.5F) is suitable to produce capacitors. the oxidation process can be stimulated by heating wafer at a temperature of 1000 C to 2000 C Conducted in a clean condition to prevent from any contaminant.

Function Oxide Layer

1. Protecting the physical wafer surface from scratches

2. Protect the wafer from dust or impurities 3. Protect the wafer from chemical reactions as a result of blackened 4. Become an insulator during the oxidation 5. Act as a dielectric wafer surface to prevent short circuits between the layers metallization 6. Act as a dielectric in the componentcomponents such as MOS transistors to induce charge into the GATE terminal

The oxide layer

1. Thick oxide layer (oxide FIELD) Isolation TRANSISTOR USED FOR INFLUENCE THE FLOW IDs The speed of switching 2. Thin oxide layer (oxide THIN) > USED FOR CREATING A thin layer >GET oxide 3. FACTORS THAT INFLUENCE THICKNESSLAYERS oxide > DENSITY impurities >TEMPERATURE >TIMES YES

Wet oxidation
Oxidation WET ROSES Mergers wet vapour with silicon to produce a silicon oxide oxygen gas is passed into the jar filled with heated oxygen until the boiling point The water vapour is released and enters the furnace containing pieces of heatingpieces of silicon wafers Chemical reactions involved in reaction of silicon with water vapour. Si + SiO2 + 2H2 2H2 O As a result a layer of SiO2 insulator formed on the surface of silicon wafers. This process may take a short time but oxide produced are usually thick but inferior to Oxide methods

Dry oxidation
DRY oxidation The pieces are arranged SILICON WAFER THE TUBES quartz DRY OXYGEN GAS channeled into TUBES quartz WAFER then heated at a temperature 1100 C OXYGEN GAS TO ATTENDANCE DRY OXYGEN GAS IN DRY absorbed Slowly the pieces ON WAFER BY CHEMICAL YES THE FOLLOWING: Si + SiO2 O2 A LAYER INSULATION EFFECT SiO2 Develop on the SURFACE SILICON WAFER MERIT - The high-quality oxide - Growing up takes a long time - The effect of oxide pinhole-free or voids, water that is common when the oxide grown dramatically - Oxide is a thin but durable

Doping Process
1. It is the process in which silicon atoms in the silicon substrate is replaced by atoms doped n type or p type 2. This method is commonly used in the manufacture of junction 3. Operations where the number of donors and recipients available on a substrate modified at certain parts so that the p-type material, or type n 4. In this case SiO 2 used as doping because photolithography can not survive at high temperatures where the 1000 C to 1300 Celsius. 5. Thus the area who do not have to drink to be covered by SiO 2 and the UV light exposure in applying e and cleaned by etching process. 6. Doping two methods, namely: diffusion Planting Ion 7. In bipolar transistors, this process will develop areas such as sites, collectors and producers. 8. While the types of MOS transistors, this process produces the gate, drain and source.

The factors that the addition of p or n-type material to the wafer

Added the @ below the surface of the wafer The thickness of the layer (on the surface of the wafer) The depth of the layer (below the surface of the wafer) The accuracy of the thickness / depth & density required The maximum temperature required Ability to operating the equipment Cost of equipment

Diffusion Method

1. The process of diffusion occurs when gas doped epitaxial layer diffused into the SiO 2through the opening made in the process photo lithography to form p-type material, or type n 2. Doped materials used consist of gases, such as: Gas fosferus, arsenic gas Gas boron 3.

Method of Cultivation Ion

Ion Method introduced to overcome the thermal diffusion method is not able to produce smaller and smaller components, and compact. It is a method of inserting or planting doped into the crystal wafer by means of accelerated ions doped with high-speed kinetic energy in a controlled ion density.

Magnetic Separation of Mass Opinion

Figure Planting Ion

Planting Method Ion Advantage The accuracy of the position and density can be controlled at the level of doped right. The thickness of the uniform doped. Using low temperatures to room temperature. Atoms can diode directly to the wafer surface. Reduce damage to the crystal (crystal damage) by high temperature. The disadvantage of Planting Method Ion Causing a defect in the crystal lattice of atoms bombarded by doped. high cost of equipment. Production of a limited wafer.

Fotolitografi
1. The process is to determine the SiO2 to be washed or etching 2. Method of removal of the oxide layer chosen to produce the aperture through which the impurities can be diffused 3. The purpose of this process is to create openings for the diffusion of gaseous impurities during the diffusion process so that active and passive components can be formed on the layer.

Photo masks are pieces of glass with a pattern of opaque and transparent pattern on the surface act as opaque pattern block uv rays from penetrating mask photo the pattern is transparent to uv light through a mask allows photos the shape of the size and position of each pattern on the mask is a very accurate picture

There are two types of resistance in photos: a) resistant photos positive (+ ve) b) resistant photo-negative (- ve The properties that should have occupied a photo: It must be properly attached to the substrate surface The thickness of the resistance must be uniform on the surface of the substrate

Resistant PHOTO NEGATIVE

Differences Between Positive And Negative Resistance Photos

Photo Positive Resistant > Solids change to liquids >The conversion process is called fotosolubization >Used to create islands on the surface of the wafer

Resistant Photo Negative

>Liquids change to solids when exposed

to UV light. >The process is called polymerization structure. > Used to produce the opening of the "hole" on the surface of the wafer.

Metallization
Metalizing is the general name for the technique of coating metal on the surface of non-metallic objects. Techniques for metallization started as early as mirror making. In 1835, Justus von Liebig discovered the process of coating a glass surface with metallic silver, making the glass mirror one of the earliest items being metalized. Plating other non-metallic objects grew rapidly with introduction of ABS plastic. Because a non-metallic object tends to be a poor electrical conductor, the object's surface must be made conductive before plating can be performed. The plastic part is first etched chemically by a suitable process, such as dipping in a hot chromic acidsulphuric mixture. The etched surface is sensitised and activated by first dipping in tin(II) chloride solution, then palladium chloride solution. The processed surface is then coated with electro less copper or nickel before further plating. This process gives useful (about 1 to 6 kgf/cm or 10 to 60 N/cm or 5 to 35 lbf/in) adhesion force, but is much weaker than actual metal-to-metal adhesion strength.

a) Sediment aluminium throughout the wafer b) The process fotolitografi implemented to produce the opening in the lining aluminium c) etching of aluminium out of the parts that are not required d) heating the wafer to attach the silicon and a layer of aluminium oxide

Metals that can be used for metal layer

Aluminium Titanium Platinum Gold Copper

Non-metallic materials that can be used for metal layer

polysilicon - the MOS transistor gate

Five techniques Metallization

1. Thermal evaporation 2. Electron beam evaporation 3. Spark technique 4. Chemical vapor deposition technique 5. Pmeplatan

Etching
Etching (Etch) - Defined as the removal of - Engraving on metal using acid Etching (etching) Removes the layer materials such as silicon oxide (SiO2), silicon nitric (Si3N4) andpolysilicon that is not needed in a particular place on the wafer surface. Etching process > In the formation of wafer components, the materials are only required in certain places > An etching step is only Remove only one type of material The purpose of etching > To remove the surface damage during the cutting of wafers using hydrofluoric acid to remove the effects of the surrounding saw tooth wafer. > To remove the oxide layer on the surface fotorintang in the process fotolitografi c. Remove the metal surfaces that are not wanted in metel to make contact between the devices.

Etching materials

Etching material HIDROFLORIK acid / nitric acid

HIDROFLORIK ACID HIDROFLORIK ACID / NITRIK / ASETIK NITRIK ACID + HIDROFLORIK ACID SULFURIK ACID + ASETON + TRIKLOROETERINA

Layers etching
SiO2 SILIKON NITRAT

ALUMINIUM POLIHABLUR SILIKON FOTO RINTANG

WET etching
- This type of etching using a chemical solution - Only soluble or only the target material - This method is limited to opening size greater than 2 micro-meters - Known as the under cutting (happens to the materials and periphery)

DRY etching
- Responding to the rare gas (plasma) - This only occurs on the target - 100 percent the size of the image on the resistant (layer fotorintang) - Opening the same size on the size of the image on the layer fotorintang - Integrated Circuits produced less than 2 micro-meters