Beruflich Dokumente
Kultur Dokumente
NAME
: M.RATHA
MASTER OF ENGINEERING
IN APPLIED ELECTRINICS
BONAFIDE CERTIFICATE
Certified that this project report titled
MODELING AND SIMULATION THE EFFECTS OF
bonafide work of Ms.M.RATHA. (REG.NO:51210401012) who carried out the research under my supervision. Certified further, that to the best of my knowledge the work reported herein does not form part of any other project report or dissertation on the basis of which a degree or award was conferred on an earlier occasion on this or any other candidate.
SIGNATURE Dr.N.MOHANKUMAR HEAD OF THE DEPARTMENT S.K.P Engineering College, Thiruvannamalai-606 611
INTERNAL EXAMINER
EXTERNAL EXAMINER
TABLE OF CONTENTS
S.NO TITLE 1.
PAGE NO.
ABSTRACT INTRODUCTION
2.
3.
OBJECTIVE
4.
LITERATURE SURVEY
5.
DETAILS OF TOOLS
6.
DISCUSSION
LIST OF FIGURES
FIGURE NO.
TITLE
PAGE NO.
1.1 1.2
6 7
1.3
1.4
12
1.5
13
1.6
Hierarchy of technology CAD tools building from the process level to circuits
22
1.7
23
1.8
TCAD structure
1.9
Meshed structure
2.0
2.1
Extraction of threshold voltage using drain current versus gate voltage curve The electron mobility characteristics of Ge-nMOSFET
Sub threshold swing The permittivity of free space, The relative permittivity Threshold voltage gate capacitance oxide thickness jth eigen-energy, Wave function, carrier quantization effective mass. conduction band edge
LIST OF ABBREVIATIONS
MOSFET IGFET MISFET SCE SEMOI BOX UTC RSD DIBL ULSI BTBT UTB GAA QC TCAD MetalOxideSemiconductor Field-Effect Transistor Insulated-Gate Field-Effect Transistor MetalInsulatedSemiconductor Field-Effect Transistor Short Channel Effect SEMiconductor On Insulator Buried Oxide Ultra Thin Channel Raised Source/Drain Drain Induced Barrier Lowering Ultra Large Scale Integration Band-to-Band-Tunneling Ultra Thin Body Gate-All-Around Quantum confinement Technology Computer Aided Design,