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MODELING AND SIMULATION THE EFFECTS OF SHORT CHANNEL ULTRA -THIN BODY GERMANIUM-ON INSULATOR MOSFETS

PROJECT REPORT Submitted by

NAME

: M.RATHA

Register No: 51210401012


in partial fulfillment for the award of the degree of

MASTER OF ENGINEERING
IN APPLIED ELECTRINICS

DEPARTMENT OF INFORMATION AND COMMUNICATION ENGINEERING

S.K.P ENGINEERING COLLEGE THIRUVANNAMALAI 606 611


DECEMBER 2011

BONAFIDE CERTIFICATE
Certified that this project report titled
MODELING AND SIMULATION THE EFFECTS OF

SHORT CHANNEL ULTRA -THIN BODY GERMANIUM-ON-INSULATOR MOSFETs is the

bonafide work of Ms.M.RATHA. (REG.NO:51210401012) who carried out the research under my supervision. Certified further, that to the best of my knowledge the work reported herein does not form part of any other project report or dissertation on the basis of which a degree or award was conferred on an earlier occasion on this or any other candidate.

SIGNATURE Dr.N.MOHANKUMAR SUPERVISOR S.K.P Engineering College, Thiruvannamalai-606 611

SIGNATURE Dr.N.MOHANKUMAR HEAD OF THE DEPARTMENT S.K.P Engineering College, Thiruvannamalai-606 611

Submitted for the University Examination held on _______________

INTERNAL EXAMINER

EXTERNAL EXAMINER

TABLE OF CONTENTS

S.NO TITLE 1.

PAGE NO.

ABSTRACT INTRODUCTION

2.

3.

OBJECTIVE

4.

LITERATURE SURVEY

5.

DETAILS OF TOOLS

6.

DISCUSSION

LIST OF FIGURES

FIGURE NO.

TITLE

PAGE NO.

1.1 1.2

Basic structure of MOSFET Photomicrograph of two metal-gate MOSFETs in a test pattern

6 7

1.3

Metaloxidesemiconductor structure on P-type silicon

1.4

Germanium MOSFET Structure

12

1.5

Schematic of UTB MOSFET

13

1.6

Hierarchy of technology CAD tools building from the process level to circuits

22

1.7

Typical tool flow with device simulation using Sentaurus Device

23

1.8

TCAD structure

1.9

Meshed structure

2.0

Measured drain or ID-VD Characteristics of GenMOSFET

2.1

Measured transfer characteristics of the novel GenMOSFET Ioff Characteristics of Ge-nMOSFET

Ion Characteristics of Ge-nMOSFET

Transconductance characteristics of Ge nMOSFET

The DIBL Characteristics of Ge-nMOSFET

Extraction of threshold voltage using drain current versus gate voltage curve The electron mobility characteristics of Ge-nMOSFET

LIST OF SYMBOLS S 0 K VT Cgg tox Ej j(x) mx Ec(x) -

Sub threshold swing The permittivity of free space, The relative permittivity Threshold voltage gate capacitance oxide thickness jth eigen-energy, Wave function, carrier quantization effective mass. conduction band edge

LIST OF ABBREVIATIONS
MOSFET IGFET MISFET SCE SEMOI BOX UTC RSD DIBL ULSI BTBT UTB GAA QC TCAD MetalOxideSemiconductor Field-Effect Transistor Insulated-Gate Field-Effect Transistor MetalInsulatedSemiconductor Field-Effect Transistor Short Channel Effect SEMiconductor On Insulator Buried Oxide Ultra Thin Channel Raised Source/Drain Drain Induced Barrier Lowering Ultra Large Scale Integration Band-to-Band-Tunneling Ultra Thin Body Gate-All-Around Quantum confinement Technology Computer Aided Design,

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