CR02AM-8

Thyristor
Low Power Use
REJ03G0542-0100 Rev.1.00 Mar.28.2005

Features
IT (AV) : 0.3 A VDRM : 400 V IGT : 100 A Planar Passivation Type Completed Pb free product

Outline
RENESAS Package code: PRSS0003DE-A (Package name: TO-92(3))
2

3 1 3 2 1

1. Cathode 2. Anode 3. Gate

Applications
Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic equipment, strobe flasher, and other general purpose control applications

Maximum Ratings
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 8 400 500 320 400 320 Unit V V V V V

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CR02AM-8
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Ratings 0.47 0.3 10 0.4 0.1 0.01 6 6 0.1 40 to +125 40 to +125 0.23 Unit A A A A2s W W V V A C C g Conditions Commercial frequency, sine half wave 180 conduction, Ta = 30C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Typical value

Notes: 1. With gate to cathode resistance RGK = 1 k.

Electrical Characteristics
Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Min. 0.2 20 Typ. Max. 0.1 0.1 1.6 0.8 100Note2 3 180 Unit mA mA V V V A mA C/W Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied, RGK = 1 k Ta = 25C, ITM = 0.6 A, instantaneous value Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Tj = 125C, VD = 1/2 VDRM, RGK = 1 k Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Tj = 25C, VD = 12 V, RGK = 1 k Junction to ambient

Notes: 2. If special values of IGT are required, choose item E from those listed in the table below if possible. Item B E IGT (A) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3. IGT, VGT measurement circuit.
A1 IGS 3V DC A3 RGK 1 1k Switch IGT A2 2 V1 VGT TUT 6V DC 60

Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k)

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CR02AM-8

Performance Curves
Maximum On-State Characteristics
101 7 Ta = 25C 5 3 2 100 7 5 3 2 101 7 5 3 2 102 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 10

Rated Surge On-State Current

Surge On-State Current (A)

9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 10 2

On-State Current (A)

On-State Voltage (V)

Conduction Time (Cycles at 60Hz)

102

100 (%)

Gate Characteristics
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2

Gate Trigger Current vs. Junction Temperature

103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 60 40 20 0 20 40 60 80 100 120 140

Typical Example

Gate Voltage (V)

101

PG(AV) = 0.01W VGT = 0.8V IGT = 100A (Tj = 25C) VGD = 0.2V IFGM = 0.1A

100

101

102 102 2 3 5 71012 3 5 7 100 2 3 5 7 101 2 3 5 7 102

Gate Current (mA)

Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C)

VFGM = 6V

PGM = 0.1W

Junction Temperature (C)

Gate Trigger Voltage vs. Junction Temperature

1.0 0.9

Maximum Transient Thermal Impedance Characteristics (Junction to ambient)

Transient Thermal Impedance (C/W)

100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 103 2 3 5 7102 2 3 5 7101 2 3 5 7 100

Gate Trigger Voltage (V)

Distribution Typical Example

0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 40 20 0 20 40 60 80 100 120 140 160

Junction Temperature (C)

Time (s)

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CR02AM-8
Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave)
160

Maximum Average Power Dissipation (Single-Phase Half Wave)

0.8

Average Power Dissipation (W)

Ambient Temperature (C)

0.7 0.6 0.5

140 120 100 80 60 40 20 0 0

360 Resistive, inductive loads Natural convection

120 60 90

180

0.4 0.3 0.2 0.1 0 0

= 30 360 Resistive, inductive loads

0.1 0.2 0.3 0.4

= 30 60
0.1

90 120
0.2

180
0.3 0.4

Average On-State Current (A)

Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave)
160

Maximum Average Power Dissipation (Single-Phase Full Wave)

0.8

Average Power Dissipation (W)

180 120 90 60 = 30

Ambient Temperature (C)

0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3

140 120 100 80 60 40 20 0

360 Resistive loads Natural convection

360 Resistive loads

0.4 0.5

= 30
0 0.1

60 90 120
0.2 0.3 0.4

180
0.5

Average On-State Current (A)

Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave)
160

Maximum Average Power Dissipation (Rectangular Wave)

0.8

Average Power Dissipation (W)

Ambient Temperature (C)

0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 60 = 30 90 180 120

DC 270

140 120 100 80 60 40 20 0 0

Resistive, inductive loads Natural convection

360

360 Resistive, inductive loads

0.3 0.4 0.5

= 30 60 90 120 180 270 DC

0.1 0.2 0.3 0.4 0.5

Average On-State Current (A)

Average On-State Current (A)

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Mar.28.2005,

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CR02AM-8
Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance
120 100 80 60 40 20 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

100 (%)

160

Typical Example
140 120 100 80 60 40 20

RGK = 1k

100 (%)

Typical Example Tj = 125C

0 40 20 0 20 40 60 80 100 120 140 160

Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k)

Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C)

Junction Temperature (C)

Gate to Cathode Resistance (k)

100 (%)

Breakover Voltage vs. Rate of Rise of Off-State Voltage

120 100 80 60 40 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2

Holding Current vs. Junction Temperature

Tj = 25C Typical Example IH(25C) = 1mA IGT(25C) = 25A Distribution Typical Example

Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s)

#2

#1 Typical Example # 1 IGT(25C)=10A 20 # 2 IGT(25C)=66A Tj = 125C, RGK = 1k 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

Holding Current (mA)

101 60 40 20 0 20 40 60 80 100 120 140

Rate of Rise of Off-State Voltage (V/s)

Junction Temperature (C)

100 (%)

500

100 (%)

Holding Current vs. Gate to Cathode Resistance

Typical Example IGT(25C) IH(1k) 1.6mA # 1 13A # 2 59A 1.8mA

Repetitive Peak Reverse Voltage vs. Junction Temperature

160 140 120 100 80 60 40 20 0 40 20 0 20 40 60 80 100 120 140 160

400

#1
300

#2
200

100

Tj = 25C
0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

Gate to Cathode Resistance (k)

Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C)

Typical Example

Holding Current (RGK = rk) Holding Current (RGK = 1k)

Junction Temperature (C)

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Mar.28.2005,

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CR02AM-8
Gate Trigger Current vs. Gate Current Pulse Width

100 (%)

Gate Trigger Current (tw) Gate Trigger Current (DC)

103 7 5 4 3 2 102 7 5 4 3 2

#1

Typical Example IGT(25C) # 1 10A # 2 # 2 66A

Tj = 25C 101 100 2 3 4 5 7 101

2 3 4 5 7 102

Gate Current Pulse Width (s)

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Mar.28.2005,

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CR02AM-8

Package Dimensions
JEITA Package Code
SC-43A

RENESAS Code
PRSS0003DE-A

Package Name TO-92(3)

MASS[Typ.] 0.23g

Unit: mm

4.8 0.3

3.8 0.3

2.3 Max
0.55 Max

0.7

0.60 Max

12.7 Min

5.0 0.2

0.42 Max

1.27 2.54

Order Code
Lead form Standard packing Quantity Standard order code Standard order code example CR02AM-8-E CR02AM-8-ETZ

Straight type Vinyl sack 500 Type name Form A8 Taping 2500 Type name ETZ Note : Please confirm the specification about the shipping in detail.

Rev.1.00,

Mar.28.2005,

page 7 of 7

Sales Strategic Planning Div.

Keep safety first in your circuit designs!

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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