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6.

002x

CIRCUITS AND ELECTRONICS

MOSFET SCS Model MOSFET Amplifier

Review
n Dependent source in a circuit

i = f (v)

n Superposition with dependent sources. One approach: - leave all dependent sources in; - solve for one independent source at a time - [section 3.5.1 of the text]
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Review
Next, quick review of amp. Reading: Chapter 7.37.7 Vs RL vO
VCCS

iD

iD =

vI

K (vI 1)2 2

for vI 1V

= 0 otherwise

vO = VS iD RL
K (v I 1)2 2
3

The i-v relation for a current source


i

Hold the thought

Key device Needed


VCCS

Vs

vO vI +

Key device Needed


VCCS A D B
VCCS

Vs

vO vI +

i = f(v) C

Lets look at our old friend, the MOSFET

Our old friend, the MOSFET


First, we sort of lied. The on-state behavior of the MOSFET is quite a bit more complex than either the ideal switch or the resistor model would have you believe.

Lets Look at the MOSFET Behavior Graphically


D

G
S

Graphically

Demo

v+ GS

iDS

+ vDS

iDS

iDS

vDS S MODEL SR MODEL

vDS
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Graphically

Demo

v+ GS

iDS

+ vDS

iDS

iDS

iDS

vGS VT vGS VT vGS < VT


S MODEL

vDS

vGS < VT
SR MODEL

vDS

vDS
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Graphically
v+ GS

iDS

+ vDS

e re gion

iDS

vDS < vGS VT


iDS iDS

vDS = vGS VT vGS 1


Saturation region vDS vGS

vGS VT vGS VT
vGS < VT
S MODEL

Trio d

vGS 2
...

VT

vDS vGS VT
Notice that MOSFET behaves like a current source

when

vGS VT vGS 3
vDS

vDS

vGS < VT
SR MODEL

vDS

vGS < VT

Cutoff region

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MOSFET SCS Model


When vDS vGS VT and vGS VT the MOSFET is in its saturation region, and the switch current source (SCS) model of the MOSFET is more accurate than the S or SR model

D G S

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When to use which model


e re gion

iDS

iDS

iDS

vDS = vGS VT vGS1


Saturation region

vGS VT vGS VT vGS < VT


S MODEL for fun!

Trio d

vGS2 vGS3

vGS VT vDS vGS VT

vDS

vGS < VT

vDS

...

SR MODEL

vGS < VT

vDS
SCS MODEL for analog designs

for digital designs

When to use each model in 6.002?

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In More Advanced Courses


Note: alternatively (in more advanced courses) vDS vGS VT use SCS model vDS < vGS VT use SR model or, use SU (Switch Unified) Model (Section 7.8 of A&L)

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Back to Amplifier
VS RL

vI

VS AMP vO vI A vO

vO vI
iD

iD =

K (vI 1)2 2

To ensure the MOSFET operates as a VCCS, we must operate it in its saturation region only. To do so, we promise to adhere to the saturation discipline
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MOSFET Amplifier
VS RL vI G D S vO
iDS

vDS = vGS VT
e re gion

vGS 1
Saturation region

vDS vGS VT

Trio d

vGS 2
...
vGS VT

iDS

K 2 = (vI VT ) 2
Saturation discipline

vGS 3
vDS

in saturation region

Cutoff region

vGS < VT

In other words, we will operate the amp circuit such that:

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MOSFET Amplifier
VS RL vI G D S vO
iDS

vDS = vGS VT
e re gion

vGS 1
Saturation region

vDS vGS VT

Trio d

vGS 2
...
vGS VT

iDS

K 2 = (vI VT ) 2
Saturation discipline

vGS 3
vDS

in saturation region

Cutoff region

vGS < VT

In other words, we will operate the amp circuit such that

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Lets analyze the circuit


First, replace the MOSFET with its SCS model vI G

VS RL vO D S

iDS =

in saturation region

K (vI VT )2 2

Two methods: 1. Analytical 2. Graphical


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Lets analyze the circuit


Find vO vs vI
(vO = vDS in our example)

VS RL vO

1 Analytical method:

A
K (vI VT )2 2 vO vI VT

vO vs vI

vGS = vI G + + v I

iDS =

for
S

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Graphical method
K (vI VT )2 2

vDS = vGS VT
iDS
Trio regiode n
iDS =

From A : iDS =

Saturation region

K 2 vO 2

vGS2 vGS3 vDS

iDS

vGS < VT

From B : vO = VS iDS RL

...

vDS

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Graphical method
A :
iDS =

vO vS vI

B : iDS
iDS

K 2 K (vI VT )2 , for iDS vO 2 2 V v = S O RL RL


iDS K 2 vO 2

Remember, superimpose loadline due to rest of circuit (B) over device relation (A)

A
vI = vGS

Constraints A and B must be met

VS

vO

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Graphical method
A : B :
VS RL

vO vS vI
for iDS
K 2 vO 2

K 2 iDS = (vI VT ) , 2 V v iDS = S O RL RL

Constraints A and B must be met


Then, given VI, we can find VO, IDS

iDS
iDS

K 2 vO 2

A
vI = vGS

VS

vO

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Large Signal Analysis


of Amplifier (under saturation discipline) 1 2 vO versus vI Valid input operating range and valid output operating range (to guarantee saturation region operation)

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Large Signal Analysis


1 vO versus vI

Demo

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A Curious Aside
vO VS VS
Cutoff region

K 2 VS (vI VT ) RL 2

vO = vI VT

gets into triode region

VT

vI
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Large Signal Analysis


2 iDS

VS RL vI G D S vO

What are the valid operating ranges under the saturation discipline?

vI

Our Constraints

vO
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Large Signal Analysis


2 iDS

VS RL vI G D S vO

What are the valid operating ranges under the saturation discipline?
iDS
VS RL

K 2 vO 2

iDS =

VS vO RL RL vI K 2 iDS = (vI VT ) 2

Our Constraints

vI VT vO vI VT K 2 iDS vO 2
vI=VT vO=VS and iDS=0
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Z VS

vO

Large Signal Analysis


2 iDS

What are the valid operating ranges under the saturation discipline?
iDS
VS RL

Our Constraints

K 2 vO 2

vI VT vO vI VT K 2 iDS vO 2

vO =

1 + 1 + 2 KRLVS KRL

V v iDS = S O vI RL RL K 2 iDS = (vI VT ) 2

VS

vO

vI=VT vO=VS and iDS=0


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Large Signal Analysis Summary


1

vO versus vI
We will look at another way of obtaining (2) shortly

Valid operating ranges under the saturation discipline? Valid input range:

Corresponding output range:


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Another Way of Obtaining (2) Valid Op Range


vO Vs

5V

VT

vI

1V
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Another Way of Obtaining (2) Valid Op Range


vO ~ 5V VS

~ 1V
VT 1V
vI

~ 2V
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Another Way of Obtaining (2) Valid Op Range


vO ~ 5V VS

vO > vI VT

K (vI VT ) vO = VS RL 2 vO = vI VT

vO = vI VT

~ 1V
vO = vI

vO < vI VT
VT 1V

~ 2V
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