PD - 97730

IRLTS6342PbF
VDS VGS RDS(on) max
(@VGS = 4.5V)

30 12 17.5 22.0 11 8.3

V V m m nC A
G 3 4 D D 1 2 6 5

HEXFET Power MOSFET

D D S

RDS(on) max
(@VGS = 2.5V)

Qg (typical) ID
(@TA = 25C)

TSOP-6

Applications

System/Load Switch
Features and Benefits
Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability

Orderable part number IRLTS6342TRPBF

Package Type TSOP-6

Standard Pack Form Quantity Tape and Reel 3000

Note

Absolute Maximum Ratings

VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG

Parameter

Max.
30 12 8.3 6.7 64 2.0 1.3 0.02 -55 to + 150

Units
V

Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current

e Power Dissipation e
Power Dissipation

W W/C C

Linear Derating Factor Operating Junction and Storage Temperature Range

Notes through are on page 2

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9/27/11

IRLTS6342PbF

Static @ TJ = 25C (unless otherwise specified)

Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min.
30 0.5 25

Typ.
23 14.0 17.5 -4.3 11 0.5 4.6 2.2 5.4 11 32 15 1010 96 70

Max.
17.5 22.0 1.1 1.0 150 100 -100

Units

Conditions

VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA VGS = 4.5V, ID = 8.3A m VGS = 2.5V, ID = 6.7A VDS = VGS, ID = 10A V mV/C VDS = 24V, VGS = 0V A VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V nA VGS = -12V VDS = 10V, ID = 6.4A S VGS = 4.5V VDS = 15V nC ID = 6.4A

d d

ns VDD = 15V, VGS = 4.5V ID = 6.4A RG = 6.8 See Figs. 18 VGS = 0V VDS = 25V = 1.0MHz

pF

Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)

Min.

Typ.
13 5.8

Max.
2.0

Units
A

Conditions
MOSFET symbol showing the integral reverse p-n junction diode.
D

64 1.2 20 8.7 Typ. V ns nC

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

TJ = 25C, IS = 8.3A, VGS = 0V TJ = 25C, IF = 6.4A, VDD = 24V di/dt = 100/s

Thermal Resistance
Parameter
RJA Junction-to-Ambient

Max. 62.5

Units
C/W

Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T J of approximately 90C.

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IRLTS6342PbF
1000
TOP VGS 10V 4.5V 2.5V 2.0V 1.7V 1.6V 1.5V 1.4V

100
TOP VGS 10V 4.5V 2.5V 2.0V 1.7V 1.6V 1.5V 1.4V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

100

10
BOTTOM

10

BOTTOM

1.4V

0.1 1.4V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)

60s PULSE WIDTH

Tj = 25C
0.1 0.1 1

60s PULSE WIDTH

Tj = 150C 10 100

V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

Fig 2. Typical Output Characteristics

1.8
RDS(on) , Drain-to-Source On Resistance (Normalized)

ID, Drain-to-Source Current (A)

T J = 150C 10

1.6 1.4 1.2 1.0 0.8 0.6

ID = 8.3A VGS = 4.5V

T J = 25C

0.1 1.0 1.5 2.0

VDS = 15V 60s PULSE WIDTH 2.5 3.0 3.5

-60 -40 -20 0

20 40 60 80 100 120 140 160

VGS, Gate-to-Source Voltage (V)

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd

Fig 4. Normalized On-Resistance vs. Temperature

14
VGS, Gate-to-Source Voltage (V)

12 10 8 6 4 2 0

ID= 6.4A

VDS = 24V VDS = 15V

VDS = 6.0V

C, Capacitance (pF)

1000

Ciss

Coss 100 Crss

10 1 10 VDS, Drain-to-Source Voltage (V) 100

10

15

20

25

30

QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRLTS6342PbF
100

1000 OPERATION IN THIS AREA LIMITED BY R DS(on)

T J = 150C T J = 25C

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100 1msec 100sec 10 10msec

10

DC TA = 25C

VGS = 0V 1.0 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V)

Tj = 150C Single Pulse 0.1 0.1 1.0 10 100 VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

8.0

Fig 8. Maximum Safe Operating Area

1.4
VGS(th), Gate threshold Voltage (V)

1.2 1.0 0.8 0.6 0.4 0.2 0.0 ID = 10A ID = 250A ID = 1.0mA

ID , Drain Current (A)

6.0

4.0

2.0

0.0 25 50 75 100 125 150

-75 -50 -25

25

50

75 100 125 150

T A , Ambient Temperature (C)

T J , Temperature ( C )

Fig 9. Maximum Drain Current vs. Ambient Temperature

100
Thermal Response ( Z thJA ) C/W

Fig 10. Threshold Voltage vs. Temperature

D = 0.50 10 0.20 0.10 0.05 0.02 0.01

0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 1E-005 0.0001 0.001 0.01 0.1 1 10 100

0.001 1E-006

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLTS6342PbF
) RDS(on), Drain-to -Source On Resistance (m
40 35 30 25 20 15 10 5 1 2 3 4 5 6 7 8 9 10 11 12 TJ = 25C TJ = 125C ID = 8.0A

( RDS(on), Drain-to -Source On Resistance m)

45

70 60 50 40 30 20 10 0 0 10 20 30 40 50 ID, Drain Current (A) Vgs = 4.5V

Vgs = 2.5V

VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance vs. Gate Voltage

100
EAS , Single Pulse Avalanche Energy (mJ)

Fig 13. Typical On-Resistance vs. Drain Current

16000

90 80 70 60 50 40 30 20 10 0 25 50 75

ID 0.9A 1.5A BOTTOM 6.4A TOP

Power (W)

12000

8000

4000

100

125

150

0 1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

Starting TJ , Junction Temperature (C)

Time (sec)

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 15. Typical Power vs. Time

Driver Gate Drive

D.U.T

P.W.

Period

D=

P.W. Period VGS=10V

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

RG
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test

V DD

VDD

+ -

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

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IRLTS6342PbF
Vds Vgs Id

L
0

DUT 1K
S

VCC
Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 17a. Gate Charge Test Circuit

Fig 17b. Gate Charge Waveform

V(BR)DSS
15V

tp
DRIVER

VDS

RG
20V

D.U.T
IAS tp

+ V - DD

0.01

I AS

Fig 18a. Unclamped Inductive Test Circuit

Fig 18b. Unclamped Inductive Waveforms

V DS V GS RG 10V VGS
Pulse Width 1 s Duty Factor 0.1

RD

90%
D.U.T.
+

VDS

-V DD

10%

VGS
td(on) tr td(off) tf

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

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IRLTS6342PbF
TSOP-6 Package Outline

TSOP-6 Part Marking Information

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D Y = YEAR W = WEEK PART NUMBER

T OP PART NUMBER CODE REF ERENCE: A = S I3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 G = IRF 5803 H = IRF5804 I = IRF5805 J = IRF 5806 K = IRF5810 N = IRF5802 O= P= R= S=

LOT CODE

IRLT S6342TRPBF IRF TS8342TRPBF IRF TS 9342TRPBF IRLT S2242T RPBF

24 25 26

X Y Z

W = (27-52) IF PRECEDED BY A LETTER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D

Note: A line above the work week (as s hown here) indicates Lead-Free.

50 51

X Y

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRLTS6342PbF
TSOP-6 Tape & Reel Information

Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F TSOP-6 Yes

guidelines ) MS L1

(per JE DE C J-S T D-020D

Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2011

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