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EV Group at a Glance Market Drivers MEMS Bonding Family Tree Requirements for Wafer Bonding Processes for Mobile Applications Example: Invensense MEMS device Eutectic and TLP bonding Low Temperature Oxide Bonding
EV Group at a Glance
EV Group (EVG) is a global supplier of
Wafer Bonders Aligners Coaters / Developers Temporary Bonders / Debonders (Laminator) Cleaners Inspection Systems
EV Group holds the dominant share of the market for wafer bonding equipment (especially SOI bonding) and is a leader in lithography for advanced packaging and nanotechnology.
Drivers - Summary
Consumer Applications are a major driver for growth in shipment volumes of MEMS devices Growth rate in units shipped (24%) is higher than growth rate in revenue increase (14%) Price Erosion Combo Sensors are expected to gain significant traction starting by 2012. Higher integration density desired Capability for forming electrical connections may be required
More die per wafer Smaller package and increased function per unit area
Standard process
Is this the beginning of the end of the One Product, One Process paradigm?
High throughput Eutectic Integration in existing fab environment Materials selection Use materials already established
Technical requirements
Metal Good hermeticity Ability to create electrical connections Metal / Hybrid Low temperature processing Eutectic / Plasma
Thermal budget to be compatible with CMOS wafers
Chipworks recently had a look inside their new three-axis digital gyroscope, the ITG-3200. The device is built using the Nasiri, single-chip, MEMS process, where the MEMS layer is sandwiched between a fusion-bonded cap wafer and the ASIC. The ASIC and MEMS are bonded using eutectic metal bond. The SEM image in Figure 1 provides a tilt-view of the corner of the MEMS chip, where the MEMS layer can be seen between the cap and ASIC die.
Source: http://memsblog.wordpress.com/2010/08/11/a-peak-inside-the-invensense-itg-3200-three-axis-gyroscope/
Eutectic Bond
EVG experience
Courtesy of Invensense
Al Ge Bonding
Al-Ge Eutectic
Eutectic Temperature 420C Bonding Temperature ~ 450C Bonding Force: Pattern dependant. 30 to 60kN for 200mm wafers. Optimized thermal profile required for repeatable good bonding results.
- Parent Metal is deposited on both wafers. - Deposition method may be sputtering, evaporation or electroplating - Low melting point interlayer may be deposited on one or both of the wafers. - Layer thicknesses have to be optimized to ensure process performance
- Wafers are loaded into bond chamber - Optionally oxide removal process may be performed - Oxide issue may also be countered by mechanically breaking native oxide of metal layers due to applied force.
- Wafers are heated according to recipe parameters - Low melting point interlayer starts already to diffuse into parent metal. - Heating ramp rate has to be reasonably fast to avoid consumption of the entire low melting point interlayer prior to reaching liquid phase
- Heating of wafers above melting point - Low melting point interlayer will melt and at this stage gaps in the interface may be closed. - In this phase, also some wafer topography may be compensated
- Liquid low melting point interlayer will react with parent metal and form intermetallic compounds - Reaction into IMCs results in solidification of the bond interface
- During further time at temperature, the bond metal interconnect homogenizes into a uniform distribution of IMCs and parent metal. - For some process and / or material sets, the metal stack may homogenize to a condition where the majority of the metal stack is comprised of parent metal with some IMCs dissolved in the parent metal.
Metal Based Wafer Bonding Processes TLP (Transient Liquid Phase) Bonding
Device Carrier
Plasma activation; Device and carrier (EVG810LT plasma activation equipment): Megasonic cleaning (EVG3xx series single wafer cleaner): Wafers were cleaned for particles removal using a megasonic nozzle and deionized water. Fusion bonding Bond front initiated e.g. at the wafer center. Annealing (furnace): x h at yyy C.
TABLE I. Surface Microroughness Comparison Surface Orientation and Plasma Type (100) N2 (110) N2 (111) N2 (100) O2 (110) O2 (111) O2 RMS Before Plasma 0.2254 0.0017nm 0.0979 0.0073nm 0.0862 0.0069nm 0.2502 0.0089nm 0.0956 0.0039nm
EV Group Confidential and Proprietary
RMS After Plasma 0.1922 0.0063nm 0.0886 0.0015nm 0.1009 0.0078nm 0.2200 0.0048nm 0.0956 0.0057nm 0.0949 0.0038nm
0.0712 0.0023nm
Data, design and specifications may not simultaneously apply; or depend on individual equipment configuration, process conditions and materials and may vary accordingly. EVG reserves the right to change data, design and specifications without prior notice. All trademarks, logos, website addresses or equipment names that contain the letters or words "EVG" or "EV Group" or any combination thereof, as well as the following names and acronyms are registered trademarks and/or the property of EV Group: ComBond, EZB, EZ Bond, EZD, EZ Debond, EZR, EZ Release, GEMINI, HERCULES, HyperIntegration, IQ Aligner, LowTemp, NanoAlign, NIL-COM, OmniSpray, SmartEdge, SmartView, The Triple "i" Company Invent-Innovate-Implement, Triple i. Other product and company names may be registered trademarks of their respective owners.