Fab Presentaion

WAFER PROCESSING EQUIPMENT
AND
CLEAN ROOM INVENTORY

FOR A RESEARCH BASED IC FABRICATION FACILITY
SAMI UR REHMAN (samirehman.blogspot.com)
1 SAMI UR REHMAN
Difference between Si wafer processing and compound (III/V) wafer processing

Oxidation Silicon has a natural oxide while compound semiconductors do not (deposition required). Compound semiconductor requires epitaxial deposition techniques which are quiet expensive! Stability Most of these compound semiconductors are not stable at high temperatures unlike Si. For Si, one would therefore make MOSFET kind of structures.
Difference between Si wafer processing and compound (III/V) wafer processing

Lattice Constants The first and principal difference between a Si and a GaAs substrate is the respective lattice constants. Crystalline materials (thin films) which will be deposited on top of such substrates will have to take this into account.
Etching Compound semiconductors like GaAs also requires a complex Chlorine based etch process unlike Si (F based etch).
WHAT IS A CLEAN ROOM?

A clean-room or clean room is an environment, typically used in manufacturing and scientific research, that has a low level of environmental pollutants such as dust, airborne microbes, aerosol particles and chemical vapors (Wikipedia) What matters is Particle size and particle number The standard is called: FED-STD-209 E This standard was cancelled on Nov 2011 Standardizing Agency: U.S. General Services Administration (GSA) Replaced by ISO 14644-1
CLEAN ROOM CLEAN ROOM STANDARDS
Particle Counters are used to determine the air quality by counting and sizing the number of particles in the air. This information is useful in determining the amount of particles inside a building or in the ambient air It also is useful in understanding the cleanliness level in a controlled environment.
Cost Analysis
Quotations have been sent SANCO Rough estimates of the equipment have been obtained from:
CLEAN ROOM
PARTICLE COUNTERS
Manufacturer Model Price Year of Manufacture Dimensions Capovani Brothers Inc PARTICLE MEASURMENT SYSTEMS LPS A-310 $ 7,350.00 (each) 2001 Width8.750 in (22.2 cm) Depth18.000 in (45.7 cm) H eight7.000 in (17.8 cm) 30 lb (14 kg) Maximum Number of Channels =4 Channel Sizes= 0.3, 0.5, 1.0, 5.0 m Light Source=HeNe Multimode, Passive Cavity
Weight Accessories/Othe r Information
7 $7,350
CLEAN ROOM
PARTICLE COUNTERS
Manufacturer Model Price Year of Manufacture Dimensions Pacific Scientific MET ONE $ 4,250.00 2001
Weight Accessories/Other Information
Width13.000 in (33.0 cm) Depth12.000 in (30.5 cm) Heig ht7.000 in (17.8 cm) 30 lb (14 kg) Part no.: 331-3-1-AL Particle size: 0.3 to 10 Micron
8 $4,250
CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER

Manufacturer Model Price Year of Manufacture Dimensions Air Control Inc. VLF CART $ 3,250.00 1998 Width 74.000 in (188.0 cm) Depth 21.000 in (53.3 cm) Height 74.000 in (188.0 cm)
5,459 lb (2,476 kg) Unit contains a 9W X 10H array of stainless steel cubicles (6.25"W x 4"H x 11"D) Blower: (2) EBM's STD Prefilter #: (2) 16 x 20 x 1 Hepa Filter #: (1) 18 x 48 x 3
$3,250
CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER

Manufacturer Model Price Year of Manufacture Dimensions Air Control Inc. AirPod
Weight (lbs): AirPod I: 312, AirPod II: 394, AirPod III: 455
Nominal Air flow: 2500 CFM (3/4 HP), 5000 CFM (3HP), 4000 CFM (3HP with AD after-filter). Blower Pkg (HP): AirPod I: 2-speed forward curve, direct drive; AirPod II & III: Dynamically balanced, nonsparking, motor/blowers. (Optional 2-speed motor/blower available for AirPod II.) Electrical: AirPod I, standard: 115/1/60, 11.4 amps, 3/4 HP; AirPod II & III, standard: 208-230/460/3/60, 7.87.2/4 amps, 3 HP; optional: 230/1/60 11.7 amps, 3 HP.
$3,000
Width: AirPod I: 62.50, AirPod II: 80.50, AirPod III: 104.50 Height: 31.00 Depth: 31.00
10
IC FABRICATION PHILOSOPHY!
Adding layer onto wafer! Adding impurities in wafer!
Deposition Removing an added layer!
Implantation Photolithography
Etching
11
III/V Group ingot production

Similar to the silicon ingot growth process, elemental forms of III and V group elements, plus small quantities Quartz Tube of dopant material-silicon, Rotating Chuck tellurium or zinc-are reacted at Seed Crystal Growing Crystal elevated temperatures to (boule) form ingots of doped singlecrystal III/V material like GaAs.
RF or Resistance Heating Coils
Molten Silicon (Melt)

Crucible
12
Photomask Creation
The photomask is a copy of the circuit pattern, drawn on a glass plate coated with a metallic film. The glass plate lets light pass, but the metallic film does not. Due to increasingly high integration and miniaturization of the pattern, the size of the photomask is usually magnified four to ten times the actual size.
13
PHOTOLITHOGRAPHY
Wafer processing consists of a sequence of additive and subtractive steps with patterning!!!!!
oxidation deposition ion implantation etching lithography
Lithography refers to the process of transferring a circuit pattern, embedded on a mask, to the surface of the wafer Equipment, materials, and processes needed:
A mask (for each layer to be patterned) with the desired pattern A light-sensitive material (called photoresist) covering the wafer so as to receive the pattern A light source and method of projecting the image of the mask onto the photoresist (printer or projection stepper or projection scanner) A method of developing the photoresist, that is selectively removing it from the regions where it was exposed
Photolithography is a process analogous to developing film in a darkroom
14
PHOTOLITHOGRAPHY STEPS
1 # PRE BAKE THE WAFER Wafer is preheated to about 200 - 250 degrees C in a bake oven. The purpose of this step is to ensure that the wafer is completely dry. Any moisture on the wafer surface would interfere with the photolithography process, causing it to yield poor results.
15
2 # PHOTORESIST APPLICATION AND SPINNING The wafer is placed on the wafer chuck in the center of the Photoresist Spinner. After properly adjusting the wafer on the spinner, photo resist material is applied onto the surface of the wafer and is spun so that photo resist evenly distributes on the wafer Using the Nitrogen Gun, now the wafer surface is Blown to remove any dust particles.
16
Photoresist Raw Materials
http://www.mitsuichemicals.com/photoresist.htm
17
PHOTOLITHOGRAPHY STEPS Photo resist properties

http://www.cleanroom.byu.edu/photoresists.phtml
18
Photoresist Spin Coater

Wafer
PR
EBR Water Sleeve Chuck Drain Vacuum Exhaust
19
Photoresist Applying
PR dispenser nozzle Wafer
Chuck Spindle
To vacuum pump
20
Photoresist Suck Back

PR dispenser nozzle PR suck back Wafer
Chuck Spindle
To vacuum pump
21
Photoresist Spin Coating

Chuck Spindle
To vacuum pump
22

Chuck Spindle
To vacuum pump
23

Chuck Spindle
To vacuum pump
24

Chuck Spindle
To vacuum pump
25

Chuck Spindle
To vacuum pump
26

Chuck Spindle
To vacuum pump
27

Chuck Spindle
To vacuum pump
28

Chuck Spindle
To vacuum pump
29

Chuck Spindle
To vacuum pump
30
Edge Bead Removal
Wafer
Chuck Spindle
To vacuum pump
Solvent
31
Edge Bead Removal
Wafer
Chuck Spindle
To vacuum pump
Solvent
32
Optical Edge Bead Removal Exposure

Light source
Light beam Photoresist Wafer
Exposed Photoresist
Chuck Spindle
33
3 # SOFT BAKE The wafer is placed into the Soft-Bake Oven for 30 minutes. The purpose of the soft bake is to semi-harden the photoresist
34
Methods of Soft Bake

Hot plates Convection oven Infrared oven Microwave oven
35
Baking Systems
Wafer Heater
MW Source
Heated N 2
Wafers Vacuum Heater Hot plate Convection oven Wafer
Chuck
Vacuum Microwave oven 36
Photoresist
Hot Plates
Widely used in the industry Back side heating, no surface crust In-line track system
Heater
Wafer
37
4 # EXPOSE TO UV LIGHT carefully place the wafer on the wafer chuck of the Aligner When the wafer has been properly aligned to the mask, expose it to UV light the exposure time should be set according to the particular type of photo resist and wattage of the bulb being used.
38
Alignment
Gate Mask
Photoresist
Polysilicon n+ P-Well n+
39
Exposure
Gate Mask
Photoresist
40
Ready for Post Exposure Bake
Photoresist
41
5 # DEVELOPMENT The type of developer solution used is determined by the type of photoresist chosen. Then we check the developer for the recommended development time. Typically, this will be around 30 seconds Then the wafer is immersed in the developer and agitate mildly until the time has expired. Finally the wafer is rinsed with ionized water
42
Schematic of a Spin Developer

DI water
Wafer Developer
Water sleeve
Chuck Drain Vacuum
43
Applying Development Solution

Exposed Photoresist Development solution dispenser nozzle Wafer
Chuck Spindle
To vacuum pump
44
Applying Development Solution

Exposed Photoresist Wafer
Chuck Spindle
To vacuum pump
45
Developer Spin Off

Edge PR removed Patterned photoresist Wafer
Chuck Spindle
To vacuum pump
46
DI Water Rinse
DI water dispenser nozzle Wafer
Chuck Spindle
To vacuum pump
47
Spin Dry
Wafer
Chuck Spindle
To vacuum pump
48
Ready For Hard Bake
Spindle Chuck Wafer
49
Development Profiles
PR Substrate PR
Substrate
Normal Development
Incomplete Development
PR
PR
Substrate
Under Development
Substrate
Over Development 50
Developer Solution
+PR normally uses weak base solution The most commonly used one is the tetramethyl ammonium hydride, or TMAH ((CH3)4NOH).
51
Developer Solutions
Positive PR
Developer TMAH
Negative PR
Xylene
Rinse
DI Water
n-Butylacetate
52
6 # HARD BAKE THE WAFER The wafer is placed into the Hard Bake oven now which should be preheated to between 120-130 degrees C. The wafers should remain in the hard bake oven for 30 minutes. This prepares the wafer for the next processing step.
53
Types of Photoresist
Negative Photoresist Becomes insoluble after exposure Positive Photoresist
Becomes soluble after exposure
When developed, the unexposed parts dissolved. Cheaper
When developed, the exposed parts dissolved Better resolution
54
Negative and Positive Photoresists

Photoresist Substrate UV light Mask/reticle Exposure Substrate Negative Photoresist Substrate
Photoresist
Positive Photoresist
Substrate
After Development 55
Comparison of Photoresists
- PR
Film Substrate
+ PR
Film Substrate
56
Wafer In
Hot Plate Spin Station
Stepper
Track Robot
Developer dispenser
Hot Plate
Track
57
Pre-bake and Primer Vapor Coating

Hot Plate Spin Station Stepper
Track Robot
Developer dispenser
Hot Plate
Track
58

Track Robot
Developer dispenser
Hot Plate
Track
59
Soft Bake
Track Robot
Developer dispenser
Hot Plate
Track
60
Alignment and Exposure

Track Robot
Developer dispenser
Hot Plate
Track
61
Post Exposure Bake (PEB)

Track Robot
Developer dispenser
Hot Plate
Track
62
Development
Track Robot
Developer dispenser
Hot Plate
Track
63
Hard Bake
Track Robot
Developer dispenser
Hot Plate
Track
64
Wafer out
Track Robot
Developer dispenser
Hot Plate
Track
65
Resolution
The achievable, repeatable minimum feature size Determined by the wavelength of the light and the numerical aperture of the system. The resolution can be expressed as
66
Resolution
K1 R NA
K1 is the system constant is the wavelength of the light NA = 2 ro/D, is the numerical aperture
67
Numerical Aperture
NA is the ability of a lens to collect diffracted light NA = 2 r0 / D
r0 : radius of the lens D = the distance of the object from the lens
Lens with larger NA can capture higher order of diffracted light and generate sharper image.
68
To Improve Resolution
Increase NA Larger lens, could be too expensive and unpractical Reduce DOF and cause fabrication difficulties Reduce wavelength Need develop light source, PR and equipment Limitation for reducing wavelength UV to DUV, to EUV, and to X-Ray
69
Depth of focus
The range that light is in focus and can achieve good resolution of projected image Depth of focus can be expressed as:
K 2 DOF 2 2( NA)
70
Depth of Focus
Smaller numerical aperture, larger DOF
Disposable cameras with very small lenses Almost everything is in focus Bad resolution
Prefer reduce wavelength than increase NA to improve resolution High resolution, small DOF Focus at the middle of PR layer
71
Photolithography
MASK ALLIGNER
Karl Suss MA-6 Mask Aligner
$69,000
Description Can handle Si and Compound semiconductor wafers Up to 6"in size 240 nm to 365 nm wavelength. 1:1 exposure system Maximum wafer thickness: 4.3mm Alignment accuracy of +-0.5um
72
Photolithography
MASK ALLIGNER
Mask-aligner EV-420
Description Contact mask-aligner for optical lithography Double side exposure Lamp power: 350 W Illumination spectrum: no filters
73
Photolithography
MASK ALLIGNER
Manufacturer Model Weight
Accessories/ Other Specifications 400 V 16 A 50 Hz System features Programmable controller
SussMicrotec BLE RESPECT 600 880 lb (399 kg)
PC with windows NT4SP6 and applications program Respect 1.0b0087/1.1b0002 Touch screen RS 232 Interface Vacuum monitoring External cabinet exhaust connection Automatic exhaust control Media control panel Silicon and compound semiconductor wafers
74
Photolithography
SPINNERS
Solitec 5100 LVT
$30,000 Provides spin processing of single wafers/substrates of up to 225mm diagonal Tools for loading and centering for: 4 inch (100 mm) substrate 2 inch (50 mm) substrate Solitic is the main manufacturer of this equipment, Various models from the same Company shown below
75
Photolithography
BAKE OVENS
Yes 450pb oven
Description: The 450PB is a high temperature vacuum oven using a programmable temperature controller and programmed vacuum and nitrogen flow cycles for curing of polyimide films. The unit features filtered heated nitrogen purging from the entire surface of the roof through the floor of the chamber. This flow acts to clean the wafers during the process. $22,500
Specs
Capacity: Up to two boats of 6 inch wafers Ramp: 8C/min Cool-down: 1-2C/min Max Temperature: 400C Idle Temperature: 50C
76
WAFER PROCESSING
Deposition Etching
Ion implantation
CVD PECVD PVD SPUTTERING EVAPORATION MBE

DRY ETCHING WET ETCHING
DIFFUSION ANNEALING
77
CHEMICAL VAPOR DESPOSITION
Chemical Vapor Deposition is the formation of a non-volatile solid film on a substrate by the reaction of vapor phase chemicals (reactants) that contain the required constituents.
78
CHEMICAL VAPOR DESPOSITION

Gases to be reacted are entered into the CVD chamber and react to produce the desired material to be deposited on the wafer under extremely high temperature. Wafer temp is cooler than the furnace Changing the reacting gases we can produce any material to be deposited
79
PECVD
PECVD uses two electrodes one of which contains the wafer A strong electric field b/w the electrodes ignites the plasma which decomposes the reactant gases into the material to be deposited on the wafer substrate.
80
SPUTTERING
High energy plasma knocks metal atoms out of its crystalline structure and are deposited on the wafer substrate! Mainly used for creating metal contacts (Aluminum, Titanium etc)
81
SPUTTERING
PVD75 RF Sputterer
$60,000 82
Description The RF sputterer can be used to deposit many dielectrics. Sputter two or more dissimilar materials simultaneously for complete control of film stoichiometry (co-deposition) Integrated touch screen control Single substrate up to 12" diameter Multiple substrate up to 4" diameter Substrate fixture rotation up to 20rpm
SPUTTERING
ARC-12M sputtering system
Gases available: Ar, O2 & N2 - DC sputtering power source: 2 x 250W - RF sputtering power source: 600W at 13.56MHz - Chamber pressure: 5x10-6 torr - Substrate size: 2, 4 wafer or square glass, or specimen - Targets available: Ag, Al, Al/Si (1%), Au, Cu, Cr, Hf, Mo, Pt, SnO2, SiN, Ti, TiW
83 http://www.mff.ust.hk/Eq_Sputter.htm
$55,000
SPUTTERING
CVC DC Sputterer
Capabilities Deposition - Metal Deposition - Aluminum Chromium - Copper Gold Iron Nickel $55,000 to Palladium 110,000 Platinum Ruthenium
Description The DC sputterer is used to coat samples with metals. Metal coatings are usually performed with this sputterer or with the CVC E-Beam evaporator. -Process wafers/substrates up to 6" -Computer-controlled planetary system for uniform deposition -Two 3" and two 8" sputter guns
84
EVAPORATION
Metal atom to be deposited are held in a tungsten coil which carries huge currents The metal evaporates under intense heat and finally deposits on a relatively cooler wafer.
85
EPITAXIAL DEPOSITION THERMAL EVAPORATORS

Denton SJ20C SOURCE: University of UTAH Description 4 source hearth Film thickness monitor/deposition controller
$30,000
86
EPITAXIAL DEPOSITION MOLECULAR BEAM EPITAXY
http://department.fzu.cz/surfaces/mbe/soubory/mbe/mbe_method.htm
The MBE process during the epilayer growth on GaAs substrate. Typical working temperatures of the effusion cells : Ga ~1000oC, Al ~1100oC, As ~300oC, Be ~900oC, Si ~1100oC.
87
WET ETCHING
Various mixtures of wet-chemical acid solutions are used for wet etching. The primary acids used are sulphuric , hydrofluoric (HF), hydrochloric (HCl) and phosphoric . As in silicon processing, hydrogen peroxide is used with sulphuric acid, and ammonium hydroxide provides a caustic etch. A cyanide solution (sodium or potassium) is also used for etching aluminium. As an alternative to wet etching, a plasma etching and process is used. The reactor configurations and reactant gases are very similar to those utilized in silicon device processing.
88
PLASMA ETCHING
In this form of etching, plasma is used to produce chemically reactive gases which are then made to react with the material to be etched on the wafer substrate!
89
PLASMA ETCHING
OXFORD PLASMALAB 100

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: III-V material and Metals etch
90
PLASMA ETCHING
OXFORD PLASMALAB 100

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: $29,000 III-V material and Metals etch
91
PLASMA ETCHING ICP

Metal Etcher-Unaxis SHUTTLELINE ICP
Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar substrates up to 150mm in diameter. ICP: 2.0 MHz 2500W RF: 13.56 MHz 300W Gases: Cl2, Ar, BCl3, SF6, O2 Applications: Anisotropic etching of metal films Etches Chromium, Aluminum, and other Chlorine-based etchable metals Other materials etchable by SF6, Ar, and O2 Demonstrated Use: Al, Cr and GaAs quantum dots and SiC etch
$120,000
92
PLASMA ETCHING
SAMCO RIE200iP
Manufacturer: SAMCO International Classification: Dry Etch Equipment: Inductively coupled plasma etching Uses: Etching of InP, GaAs, and other III-V compounds, SiNx, SiO2, and photoresist Etch gases Cl2, SiCl4, BCl3, Ar, CF4, CHF3, and O2
http://www.princeton.edu/mnfl/the-toollist/samco-rie200ip/
93
METROLOGY AND INSPECTION EQUIPMENT

94
SURFACE PROFILER
Tencor Sono Gauge 300
For single point measurement of Wafer thickness, Aluminum film thickness and Sheet resistance of metal film. Wafer Diameter : 3, 4, 5 and 6 Substrate Thickness : 250-700 m Sheet Resistance : 1 to 1999 /sq. Minimum Metal Film Thickness : 100
$6,800
95
PARAMETER ANALYSER
HP 4145B Semiconductor Parameter Analyzer
Specs
$4,500
In/Out Ports : 8 Source/Monitor Unit : 4 Voltage Source : 2 Voltage Monitor : 2 Voltage Resolution : 1 mV Current Resolution : 1 pA Maximum Voltage : 100 V Measurement Function : DC current through voltage-biased or current-biased devices
96
PROBE STATION
Signatone S-1160 Manual probe station
Specs Microscope of 10x to 70x magnification 4 Micropositioners in S-926 series X-Y-Z motion : 254 microns per knob revolution Tip diameter : 4 microns Vacuum chuck Max. accept a 6wafer Temperature from room temp. to 300
$5,500
97
STRESS MEASUREMENT SYSTEM

Film Stress Measurement System SMSi 3800
$3,500
98
Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate. Measure 1-D stress and produce 3-D topographical profile Specs Wafer size : 2 to 8 Thickness Limit : less than 11 mm Statistical process control and spreadsheet compatibility Automatic segmentation calculation
WET BENCH
Amerimade 8ft Polypro Wet Bench
Construction: Polypro wet bench - Length: 8ft
$10,000
- Teflon Static Bath Tank (Qty 1): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank
- Teflon Rinse Sinks (Qty 2): a. Dims: 5.5"x9"x5" (WxDxH) DI Spray Gun - 1 Amerimade Bath Timer - 2 Photohelic Exhaust Monitors - 5 Tank Fill Buttons - 4 Alarm Buttons
- Teflon Heated Bath Tanks (Qty 3): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank
99
WET BENCH
JST 4ft Stainless Steel Wet Bench
Model: JST STA00115 - Overall Length: 4ft - Dimensions: 48"x50"x82" (LxWxH) - All tanks sized for single 4"/100mm cassette - All tanks programmed via PLC controller - Automatic wafer handling (cassette) via robot
- Heated Recirculating Stainless Steel Tank: a. Tank is heated and recirculating b. White Knight Pneumatic Pump c. Tank Lid d. Tank dimensions: 7.5"x7.25"x15" (LxWxH) e. Condenser - Quick Dump Rinse (QDR) Tank: a. Dimensions: 7.5"x7.5"x5" (LxWxH) b. Controlled via PLC controller c. Tank Lid - Static Stainless Steel Tank: a. Tank dimensions: 7.5" x 7.5" x 7" (LxWxH) b. On/Off Drain
$10,000 100
MICROSCOPES
AMERICAN OPTICAL STEREO ZOOM MICROSCOPE 7X - 42X
Unit Price Number of Units Manufacturer Model Binocular Angle Eyepieces Magnification Magnification Range Zoom Range Illumination Type Stand Type Condition
$ 525.00 1 American Optical 570 45

10 X 7 X - 42 X 0.7 X - 4.2 X None None Very Good $525
101
MICROSCOPES OLYMPUS GSWH20X/12.5

Unit Price Number of Units Manufacturer Model Binocular Angle Eyepieces Model Magnification Field Number Focusing Magnification Range Zoom Range Illumination Type Stand Type $ 3,000.00 1 Olympus SZ1145 CHI 45 GSWH20X/12.5 20 X 12 mm YES 36 X - 220 X 1.8 X - 11.0 X Coaxial Incident Light (Type A) 102 $3000
Cost Model
Shipment Cost not included Most Equipment are used
US $ 350,750
HR cost: US $ 14,000 / year Minimum Equipment cost: US $ 336,750
103

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WAFER PROCESSING EQUIPMENT

CLEAN ROOM INVENTORY

Difference between Si wafer processing and compound (III/V) wafer processing

SAMI UR REHMAN (samirehman.blogspot.com)

Difference between Si wafer processing and compound (III/V) wafer processing

SAMI UR REHMAN (samirehman.blogspot.com)

WHAT IS A CLEAN ROOM?

SAMI UR REHMAN (samirehman.blogspot.com)

CLEAN ROOM CLEAN ROOM STANDARDS

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

Weight Accessories/Othe r Information

Weight Accessories/Other Information

AIR CONDITIONER/AIR FLOW CONTROLLER

Weight Accessories/Other Information

SAMI UR REHMAN (samirehman.blogspot.com)

AIR CONDITIONER/AIR FLOW CONTROLLER

Weight Accessories/Other Information

SAMI UR REHMAN (samirehman.blogspot.com)

Deposition Removing an added layer!

SAMI UR REHMAN (samirehman.blogspot.com)

III/V Group ingot production

RF or Resistance Heating Coils

Molten Silicon (Melt)

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

PHOTOLITHOGRAPHY STEPS Photo resist properties

SAMI UR REHMAN (samirehman.blogspot.com)

Photoresist Spin Coater

EBR Water Sleeve Chuck Drain Vacuum Exhaust

SAMI UR REHMAN (samirehman.blogspot.com)

Photoresist Suck Back

Photoresist Spin Coating

Photoresist Spin Coating

Photoresist Spin Coating

Photoresist Spin Coating

Photoresist Spin Coating

Photoresist Spin Coating

Photoresist Spin Coating

Photoresist Spin Coating

Photoresist Spin Coating

Edge Bead Removal

SAMI UR REHMAN (samirehman.blogspot.com)

Edge Bead Removal

SAMI UR REHMAN (samirehman.blogspot.com)

Optical Edge Bead Removal Exposure

SAMI UR REHMAN (samirehman.blogspot.com)

Methods of Soft Bake

SAMI UR REHMAN (samirehman.blogspot.com)

Wafers Vacuum Heater Hot plate Convection oven Wafer

Vacuum Microwave oven 36

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

Ready for Post Exposure Bake

SAMI UR REHMAN (samirehman.blogspot.com)

SAMI UR REHMAN (samirehman.blogspot.com)

Schematic of a Spin Developer