Ordering number:ENN6361

N-Channel Silicon MOSFET

FTD2017
Load Switching Applications
Features
Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.

Package Dimensions
unit:mm 2155A
[FTD2017]
0.65 8
0.95

3.0 5

0.425

4.5 6.4

1 0.25

4
(0.95)

Absolute Maximum Ratings at Ta = 25C

Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1%
Mounted on a ceramic board (1000mm20.8mm) 1unit Mounted on a ceramic board (1000mm20.8mm)

Conditions

0.1

Specifications

1.0

0.5

1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Ratings 20 10 5 20 0.8 1.3 150 55 to +150 Unit V V A A W W
C C

Electrical Characteristics at Ta = 25C

Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Conditions Ratings min 20 1 10 0.4 11.2 16 17 20 1500 350 230 23 29 1.3 typ max Unit V A A V S m m pF pF pF

Marking : D2017

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2502 No.63611/4

FTD2017
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=5A, VGS=0 VDS=10V, VGS=10V, ID=5A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 19 190 90 160 42 4 8 0.8 1.2 max Unit ns ns ns ns nC nC nC V

Switching Time Test Circuit

VDD=10V 4V 0V VIN VIN ID=5A RL=2

Electrical Connection
D2 S2 S2 G2

PW=10s D.C.1%

D G

VOUT

P.G

50

FTD2017
D1 S1 S1 G1

10

ID -- VDS
3.5V
3.0V 2.5V

10 9 8

ID -- VGS
VDS=10V

9 8

4.0V

Drain Current, ID A

2.0V

7 6 5 4 3 2 1 0 0 0.1

1.5V

Drain Current, ID A

7 6 5 4 3 2

Ta= 7

VGS=1.0V
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

1 0 0 0.2 0.4 0.6 0.8 1.0

1.2

--2 5
1.4

C
1.6

25C
1.8

5C

2.0

Drain-to-Source Voltage, VDS V

60

IT00922 50

Gate-to-Source Voltage, VGS V

IT00923

RDS(on) -- VGS
Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) m

RDS(on) -- Ta

Static Drain-to-Source On-State Resistance, RDS(on) m

50

40

40

30

30

ID=2A 5A

20

A, VG I D=2

2.5V S=

20

=4.0V , V GS I D=5A

10

10

0 0 2 4 6 8 10 12 IT00924

0 --50

--25

Gate-to-Source Voltage, VGS V

Ambient Temperature, Ta C

25

50

75

100

125

150

IT00925

No.6361-2/4

FTD2017
Forward Transfer Admittance, | yfs | S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2

yfs -- ID
VDS=10V

10 7 5 3 2

IF -- VSD
VGS = 0

Forward Current, IF A

= Ta

5C --2

1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2

C 25

75

0.1 7 5 3 2 0.01 0.001 2 3

Ta= 75 C
0.3 0.4

5 70.01

2 3

5 7 0.1

2 3

5 7 1.0

2 3

Drain Current, ID A
1000 7 5

5 7 10 IT00926

0.001 0.2

25 C --25 C
0.5 0.6 0.7

0.8

0.9

1.0

1.1

1.2

Diode Forward Voltage, VSD V

10000

IT00927

SW Time -- ID
VDD=10V VGS=4V td(off) tf td(on) tr

Ciss, Coss, Crss -- VDS

f=1MHz

7 5 3 2

Switching Time, SW Time ns

3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 2 3 5 7

Ciss, Coss, Crss pF

Ciss

1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16 18 20

Coss Crss

1.0

10

Drain Current, ID A
10

IT00928 100 7 5 3 2

Drain-to-Source Voltage, VDS V

IT00929

VGS -- Qg
VDS=10V ID=5A

ASO
IDP=20A ID=5A

Gate-to-Source Voltage, VGS V

9 8 7 6 5 4 3 2 1 0 0

<10s
1m s

Drain Current, ID A

10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

10

10 m s

DC

0m

op

tio Operation in this n area is limited by RDS(on).

Ta= 25C Single pulse
2

era

10

15

20

25

30

35

40

45

Total Gate Charge, Qg nC

1.5

IT00930

0.01 Mounted on a ceramic board (1000mm 0.8mm) 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS V IT00931

PD -- Ta
Mounted on a ceramic board (1000mm20.8mm)

Allowable Power Dissipation, PD W

1.3

1.0

To
0.8

tal

Di

ss

ip

0.5

1u

ati

nit

on

0 0 20

Ambient Temperature, Ta C

40

60

80

100

120

140 160 IT00932

No.6361-3/4

FTD2017

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice.
PS No.6361-4/4

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