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N-channel 100V - 0.009 - 110A - TO-247 - TO-220 - DPAK STripFET II Power MOSFET
General features
Type STW120NF10 STP120NF10 STB120NF10
DPAK
TO-247
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency,high-frequency isolated DC-DC converters for Telecom and Computer application. It is also intended for any applications with low gate drive requirements.
TO-220
Applications
Switching application
Order codes
Part number STW120NF10 STP120NF10 STB120NF10 Marking W120NF10 P120NF10 B120NF10 Package TO-247 TO-220 DPAK Packaging Tube Tube Tape & reel
October 2006
Rev 6
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Contents
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
................................................ 8
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Electrical ratings
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature Maximum lead temperature for soldering purpose
1. Pulse width limited by safe operating area. 2. ISD < 120A, di/dt < 300A/s, VDD = 80%V(BR)DSS 3. Starting Tj = 25C, ID = 60A, VDD = 50V
Table 2.
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 0.48 62.5 Unit C/W C/W
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Electrical characteristics
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating@125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 60A 2 0.009 Min. 100 1 10
100
Typ.
Max.
Unit V A A nA V
4 0.0105
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, ID = 60A VDS =25V, f=1 MHz, VGS=0 VDD=80V, ID = 120A VGS =10V (see Figure 13) Min. Typ. 90 5200 785 325 172 32 64 233 Max. Unit S pF pF pF nC nC nC
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Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=50V, ID= 60A, RG=4.7, VGS=10V (see Figure 12) Min. Typ. 25 90 132 68 Max. Unit ns ns ns ns
Table 6.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
2.1
Figure 1.
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Figure 6.
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Figure 9.
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Test circuit
Test circuit
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
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DIM. A A1 b b1 b2 c D E e L L1 L2 P R S
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P
Q
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* on sales type
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Revision history
Revision history
Table 7.
Date 20-Mar-2006 31-Mar-2006 19-Jun-2006 28-Jun-2006 05-Oct-2006
Revision history
Revision 2 3 4 5 6 Preliminary datasheet Typing error New template, no content change New ID value on Table 1 New value on Table 6 Changes
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