TECHNOLOGICAL INSTITUTE OF THE PHILIPPINES

938 Aurora Blvd., Cubao, Quezon City

College of Engineering and Architecture Department of Electronics and Communications Engineering

NEGATIVE RESISTANCE LEON CHUAS MEMRISTOR

In Partial Fulfillment of the Requirements for the completion of the subject Elective 2 Power Electronics 2

Submitted by: Brizuela, Ezekiel M. LOVE TEAM

Submitted to: Engr. Celso B. Co, Ph. D., PECE Instructor

August 16, 2012 Date

NEGATIVE RESISTOR
Negative resistance is a property of some electric circuits where an increase in the current entering a port results in a decreased voltage across the same port. This is in contrast to a simple ohmic resistor, which exhibits an increase in voltage under the same conditions. Negative resistors are theoretical and do not exist as a discrete component. However, some types of diodes (e.g., tunnel diodes) can be built that exhibit negative resistance in some part of their operating range. Such a differential negative resistance is illustrated in Figure 1 with a resonant-tunneling diode. Electric discharges through gasses exhibit negative resistance, and some chalcogenide glasses, organic semiconductors, and conductive polymers exhibit a similar region of negative resistance as a bulk property. In electronics, negative resistance devices are used to make bistable switching circuits, and electronic oscillators, particularly at microwave frequencies

Figure 1 - A working mechanism of a Resonant Tunneling Diode device and negative differential resistance in output characteristic. Notice the negative resistance characteristic after the first current peak due to reduction of first energy level below source fermi level with the gate bias.

PROPERTIES: Figure 2 shows a graph of a negative resistor, showing the negative slope. In contrast to this, a resistor will have a positive slope. Tunnel diodes and Gunn diodes exhibit a negative resistance region in their IV (current voltage) curve. They have two terminals like a resistor; but are not linear devices. Unijunction transistors also have negative resistance properties when a circuit is built using other components. For

negative resistance to be present there must be active components in the circuit providing a source of energy. This is because current through a negative resistance implies a source of energy just as current through positive resistance implies that energy is being dissipated. A resistor produces voltage that is proportional to the current through it according to Ohm's law. The IV curve of a true negative resistor has a negative slope and passes through the origin of the coordinate system (the curve can only enter the 2nd and 4th quadrants if energy is being supplied). This is to be compared with devices such as the tunnel diode where the negative slope portion of the curve does not pass through the origin. Clearly, there is no source of energy in a two terminal diode.

Figure 2 - Current-driven negative resistor (a graphical representation)

Implementations Diodes
Tunnel diodes are heavily doped semiconductor junctions that have an "N" shaped transfer curve. A vacuum tube can also be made to exhibit negative resistance. Other negative resistance diodes have been built that have an "S" shaped transfer curve. When biased so that the operating point is in the negative resistance region, these devices can be used as an Amplifier. These devices can also be biased so that they will switch between two states very quickly, as the applied voltage changes.

Operational amplifiers
The negative resistance circuit shown in Figure 3 is an opamp implementation of the negative impedance converter (see below). The two resistors R1 and the op amp constitute a negative feedback non-inverting amplifier with gain A = 2. In the case, the input resistance (for an ideal opamp) is given by; The input port of the circuit can be connected into another network as if it were a negative resistance component. In the general case can be selected to produce negative capacitances or negative inductances.

Figure 3 - Negative impedance circuit

MEMRISTOR
The memristor was originally envisioned in 1971 by circuit theorist Leon Chua as a missing nonlinear passive two-terminal electrical component relating electric charge and magnetic flux linkage. More recently the memristor definition was generalized by Leon Chua to cover all forms of 2-terminal non-volatile memory devices based on resistance switching effects and Chua has claimed that the memristor is the oldest known circuit element with its effects predating the resistor, capacitor and inductor. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix, and HRL Laboratories. When current flows in one direction through a memristor, the electrical resistance increases; and when current flows in the opposite direction, the resistance decreases. When the current is stopped, the memristor retains the last resistance that it had, and when the flow of charge starts again, the resistance of the circuit will be what it was when it was last active. It has a regime of operation with an approximately linear charge-resistance relationship as long as the time-integral of the current stays within certain bounds.

In 2008, a team at HP Labs announced the development of a switching memristor based on a thin film of titanium dioxide. These devices are being developed for application in nanoelectronic memories, computer logic, and neuromorphic computer architectures. In October 2011, the same team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip for applications in neuromorphic computer architectures. Background In his 1971 paper, Chua extrapolated the conceptual symmetry between the nonlinear resistor (voltage vs. current), nonlinear capacitor (voltage vs. charge), and nonlinear inductor (magnetic flux linkage vs. current), and inferred the memristor as a similarly fundamental nonlinear circuit element linking magnetic flux linkage and charge. In contrast to a linear (or nonlinear) resistor the memristor has a dynamic relationship between current and voltage including a memory of past voltages or currents. Other scientists had already proposed dynamic memory resistors such as the memistor of Bernard Widrow but Chua attempted to introduce mathematical generality. The resistance of a memristor depends on the integral of the input applied to the terminals (rather than on the instantaneous value of the input as in a varistor. Since the element "remembers" the amount of current that has passed through it in the past, it was tagged by Chua with the name "memristor". Another way of describing a memristor is that it is any passive two-terminal circuit element that maintains a functional relationship between the time integral of current (called charge) and the time integral of voltage (often called flux, as it is related to magnetic flux). The slope of this function is called the memristance M and is similar to variable resistance. Batteries can be considered to have memristance, but they are not passive devices. The definition of the memristor is based solely on the fundamental circuit variables of current and voltage and their time-integrals, just like the resistor, capacitor, and inductor. Unlike those three elements however, which are allowed in linear time-invariant or LTI system theory, memristors of interest have a dynamic function with memory and may be described by any of a variety of functions of net charge. There is no such thing as a standard memristor. Instead, each device implements a particular function, wherein the integral of voltage determines the integral of current, and vice versa. A linear time-invariant memristor, with a constant value for M, is simply a conventional resistor. Like other two-terminal components (e.g., resistor, capacitor, inductor), real-world devices are never purely memristors ("ideal memristor"), but will also exhibit some amount of capacitance, resistance, and inductance.

Memristor definition and criticism

According to the original 1971 definition the memristor was considered the fourth fundamental circuit element forming a non-linear relationship between electric charge and magnetic flux linkage. In 2011 Leon Chua has argued for a broader definition so that all 2-terminal non-volatile memory devices based on resistance switching should be considered memristors. Stan Williams of HP Labs has also argued that MRAM, phase change memory, and RRAM should be considered memristor technologies. Some researchers have argued that biological structures such as blood and skin should also be considered to be memristors. Others have argued that the memory device under development by HP Labs and other forms of RRAM are not actually memristors or memristive systems but part of a broader class of variable resistance systems and that a broader definition of memristor is a scientifically unjustifiable land grab to favor the memristor patents of Hewlett-Packard. Some researchers have pointed out problems with the memristor models of HP Labs. A paper by P.Meuffels and H.Schroeder published in Applied Physics A noted that one of the early memristor papers included a mistaken assumption regarding ionic conduction. A paper was posted on arXiv by P.Meuffels and R.Soni discussing possible issues and problems in the realization of memristors in terms of Landauer's principle. Researchers from Mitre Corporation have noted that memristor models based on the assumption of linear ionic drift do not account for asymmetry between set time (high-to-low resistance switching) and reset time (low-to-high resistance switching) and do not provide ionic mobility values consistent with experimental data. Non-linear ionic drift models have been suggested to compensate for this deficiency.

REFERENCES Negative Resistance, Available at http://en.wikipedia.org/wiki/Negative_resistance Memristor, Available at http://en.wikipedia.org/wiki/Memristor Abdel-All, A.; Elshafieb, A.; Elhawaryb, M.M. (2000). "DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass". Vacuum 59 (4): 845853. doi:10.1016/S0042-207X(00)00378-X. W. Alan Davis, Microwave Semiconductor Circuit Design, p. 329, Van Nostrand Reinhold ISBN 0-44227211-1 N. Balkan, B. K. Ridley, A. J. Vickers, Negative Differential Resistance and Instabilities in 2-D Semiconductors, p. 2, Springer, 1993 ISBN 0-306-44490-9. a b c d Chua, L. O. (1971), "MemristorThe Missing Circuit Element", IEEE Transactions on Circuit Theory CT-18 (5): 507519, doi:10.1109/TCT.1971.1083337 a b Chua, L. O. (2011), "Resistance switching memories are memristors", Applied Physics A 102 (4): 765 783, Bibcode 2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9