Scribd Logo
Hochladen

Willkommen bei Scribd!

  • 2sa 473

    Hochgeladen von

    skorlowsky5098
    47 Ansichten2 Seiten
    The NTE152 and NTE153 are silicon complementary transistors in a standard TO220 package designed for audio power amplification and switching applications. They have maximum ratings of 90V collector-base voltage, 90V collector-emitter voltage, 4A collector current, and -4A to 4A emitter current. Their electrical characteristics include a DC current gain of 40 minimum, saturation voltage of 1.5V maximum, and transition frequency of 200MHz minimum.

    Originalbeschreibung:

    Originaltitel

    2SA_473

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Verfügbare Formate

    PDF, TXT oder online auf Scribd lesen

    Stufen Sie dieses Dokument als nützlich ein?

    Sind diese Inhalte unangemessen?

    Dieses Dokument melden
    The NTE152 and NTE153 are silicon complementary transistors in a standard TO220 package designed for audio power amplification and switching applications. They have maximum ratings of 90V collector-base voltage, 90V collector-emitter voltage, 4A collector current, and -4A to 4A emitter current. Their electrical characteristics include a DC current gain of 40 minimum, saturation voltage of 1.5V maximum, and transition frequency of 200MHz minimum.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Als PDF, TXT herunterladen oder online auf Scribd lesen
    Markieren Sie unangemessene Inhalte
    47 Ansichten2 Seiten

    2sa 473

    Hochgeladen von

    skorlowsky5098
    The NTE152 and NTE153 are silicon complementary transistors in a standard TO220 package designed for audio power amplification and switching applications. They have maximum ratings of 90V collector-base voltage, 90V collector-emitter voltage, 4A collector current, and -4A to 4A emitter current. Their electrical characteristics include a DC current gain of 40 minimum, saturation voltage of 1.5V maximum, and transition frequency of 200MHz minimum.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Als PDF, TXT herunterladen oder online auf Scribd lesen
    Markieren Sie unangemessene Inhalte
    von 2

    NTE152 (NPN) & NTE153 (PNP)__2SA473 Silicon Complementary Transistors Audio Power Amplifier, Switch

    Description: The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220 type package designed for general purpose medium power switching and amplifier applications. Features: D Good Linearity of hFE Absolute Maximum Ratings: (TA = +25C unless otherwise specified) CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (hFE) matched to within 10% of each other. Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter CollectorEmitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CollectorEmitter Saturation Voltage BaseEmitter Voltage Transition Frequency Collector Output Capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE fT Cob Test Conditions VCB = 90V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A, IB = 0.3A VCE = 5V, IC = 3A VCE = 5V, IC = 0.5A VCB = 10V, IE = 0, f = 1MHz Min 90 40 15 3 Typ Max Unit 8 85 20 10 200 1.5 1.5 V V MHz pF V A A V(BR)CEO IC = 50mA, IB = 0

    .420 (10.67) Max

    .110 (2.79)

    .147 (3.75) Dia Max

    .500 (12.7) Max

    .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max

    Base .100 (2.54)

    Emitter Collector/Tab

    Das könnte Ihnen auch gefallen