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Bulletin I2404 rev.

A 07/00

16RIA SERIES
MEDIUM POWER THYRISTORS Stud Version

Features
Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM / V RRM

16A

Typical Applications
Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements

Major Ratings and Characteristics


Parameters
IT(AV) @ TC IT(RMS) ITSM
2

10 to 120
16 85 35

16RIA 140 to 160


16 85 35 225 235 255 235 1400 to 1600 110

Units
A C A A A A 2s A 2s V s C

@ 50Hz @ 60Hz

340 360 574 524 100 to 1200

I t

@ 50Hz @ 60Hz

VDRM/VRRM tq TJ typical

- 65 to 125

Case Style TO-208AA (TO-48)

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16RIA Series
Bulletin I2404 rev. A 07/00

ELECTRICAL SPECIFICATIONS Voltage Ratings


Voltage Type number Code
10 20 40 60 16RIA 80 100 120 140 160

V DRM /V RRM , max. repetitive peak and off-state voltage (1) V


100 200 400 600 800 1000 1200 1400 1600

VRSM , maximum nonrepetitive peak voltage (2) V


150 300 500 700 900 1100 1300 1500 1700

I DRM /I RRM max.


@ TJ = TJ max.

mA
20

10

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms

On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current

16RIA 10 to 120
16 85 35 340 360 285 300

140 to 160
16 85 35 225 235 190 200 255 235 180 165 2550 1.14 1.31 14.83 12.03 --1.80

Units
A C A A

Conditions
180 sinusoidal conduction

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.

I2t

Maximum I2t for fusing

574 524 405 375

A2s

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

I2t

Maximum I2t for fusing voltage

5740 0.97 1.24 17.9 13.6 1.75 ---

A2s V

t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.

VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.

Ipk= 50 A, TJ = 25C TJ = 25C. Anode supply 6V, resistive load,

IH IL

Maximum holding current Latching current

130 200

mA

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16RIA Series
Bulletin I2404 rev. A 07/00

Switching
Parameter
di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 800V VDRM 1000V VDRM 1600V tgt trr tq Typical turn-on time Typical reverse recovery time 200 180 160 150 0.9 4 s TJ = 25C, at = rated VDRM/VRRM, TJ = 125C TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. A/s

16RIA

Units

Conditions
TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A

Blocking
Parameter
dv/dt Max. critical rate of rise of off-state voltage

16RIA
100 300 (*)

Units
V/s

Conditions
TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM

(**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 16RIA160S90.

Triggering
Parameter
PGM IGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak negative gate voltage DC gate current required to trigger 90 60 35 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.0 2.0 1.0 2.0 0.2 V V mA V mA TJ = - 65C TJ = 25C TJ = 125C TJ = - 65C TJ = 25C TJ = 125C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied

16RIA
8.0 2.0 1.5 10

Units Conditions
W A V TJ = TJ max. TJ = TJ max. TJ = TJ max.

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16RIA Series
Bulletin I2404 rev. A 07/00

Thermal and Mechanical Specification


Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range

16RIA
- 65 to 125 - 65 to 125 0.86

Units Conditions
C C K/W DC operation

R thJC Max. thermal resistance, junction to case R thCS Max. thermal resistance, case to heatsink T Mounting torque to nut

0.35

K/W

Mounting surface, smooth, flat and greased

to device 25 0.29 2.8 lbf-in kgf.m Nm g (oz) See Outline Table Lubricated threads (Non-lubricated threads)

20(27.5) 0.23(0.32) 2.3(3.1) wt Approximate weight Case style

14 (0.49)

TO-208AA (TO-48)

RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle
180 120 90 60 30

Sinusoidal conduction Rectangular conduction Units


0.21 0.25 0.31 0.45 0.76 0.15 0.25 0.34 0.47 0.76 K/W

Conditions
TJ = TJ max.

Ordering Information Table


Device Code

16
1

RIA 160
2 3

M
4

S90
5

1 2 3 4

Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 X 1

Critical dv/dt: None = 300V/s (Standard value) S90 = 1000V/s (Special selection)

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16RIA Series
Bulletin I2404 rev. A 07/00

Outline Table

Case Style TO-208AA (TO-48)


All dimensions in millimeters (inches)

Maximum Allowable Case Temperature (C)

120 110 100 90 80 70 60 50 0 5

16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W

Maximum Allowable Case Temperature (C)

130

130 120 110 100

16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W

Conduction Angle

Conduction Period

90 80 70 60 50 0

30

30

60

60 90 120 180 DC 10 20 30 40

90

120

180

10

15

20

25

Average On-state Current (A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic

Fig. 2 - Current Ratings Characteristic

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16RIA Series
Bulletin I2404 rev. A 07/00
Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 5 10
Conduction Angle

180 120 90 60 30 RMS Limit

hS R t

K/ W

= 1 0. W K/

3K /W 4K /W 5K /W 7K /W
10 K/W

a elt -D R

16RIA Series (100 to 1200V) TJ = 125C 15 20 25 0

25

50

75

100

125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 3 - On-state Power Loss Characteristics


Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 4 8 12 RMS Limit
Conduction Period

DC 180 120 90 60 30

hS R t

K/ W

= 1 0. W K/

3K /W 4K /W 5K /W 7K /W
10 K/W

a elt -D R

16RIA Series (100 to 1200V) TJ = 125C 16 20 24 28 0

25

50

75

100

125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 4 - On-state Power Loss Characteristics


300 Peak Half Sine W ave On-state Current (A) 280 260 240 220 200 180 160 140 1 16RIA Series (100 to 1200V) 10 100
At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial TJ= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

350 Peak Half Sine Wave On-state Current (A) 325 300 275 250 225 200 175 150

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated V RRM Reapplied

16RIA Series (100 to 1200V) 0.1 Pulse Train Duration (s) 1

125 0.01

Num Of Equal Amplitude Half Cycle Current Pulses (N) ber

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

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16RIA Series
Bulletin I2404 rev. A 07/00
1000 Instantaneous On-state Current (A) 16RIA Series (100 to 1200V)

100

10

TJ = 25C TJ = 125C

1 0.5

1.5

2.5

3.5

Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics


Maximum Allowable Case Temperature (C) 16RIA Series (1400 to 1600V) R thJC (DC) = 1.15 K/W Maximum Allowable Case Temperature (C) 130 130 120 110 100 90 80 30 70 0 5 90 60 120
Conduction Period

16RIA Series (1400 to 1600V) R thJC (DC) = 1.15 K/W

120

110

Conduction Angle

100

30

60

90

120

90

180

180 DC 20 25 30

80

10

12 14

16 18

10

15

Average On-state Current (A)

Average On-state Current (A)

Fig. 8 - Current Ratings Characteristics


Maximum Average On-state Power Loss (W) 30 25 20 15 10 5 0 180 120 90 60 30 RMS Limit

Fig. 9 - Current Ratings Characteristics

S R th

/W 1K W K/ 1.5 /W 2K W K/

5 2.

3. 5

K/ W

/W .5 K =0

5K /W

R elta -D

7K /W
Conduction Angle
10 K/W

16RIA Series (1400 to 1600V) T = 125C J 0 5 10 15 20 0 25 50 75 100 125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 10 - On-state Power Loss Characteristics

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16RIA Series
Bulletin I2404 rev. A 07/00
Maximum Average On-state Power Loss (W) 40 35 30 25 DC 180 120 90 60 30
SA R th

/W 1K W K/

2 K/ W 2. 5K /W
3.5 K/W

5 1.

K/W .5 =0 aR elt -D

20 RMS Limit 15 10 5 0 0 4 8 12
Conduction Period

5K /W
7K /W

16RIA Series (1400 to 1600V) TJ = 125C 16 20 24

10 K /W

28 0

25

50

75

100

125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 11 - On-state Power Loss Characteristics


200 Peak Half Sine Wave On-state Current (A) 180 160 140 120 100 80 250 Peak Half Sine Wave On-state Current (A) 225 200 175 150 125 100 16RIA Series (1400 to 1600V) 0.1 Pulse Train Duration (s) 1

At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V Reapplied RRM

16RIA Series (1400 to 1600V) 1 10 100

75 0.01

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 12 - Maximum Non-Repetitive Surge Current


1000 Instantaneous On-state Current (A)

Fig. 13 - Maximum Non-Repetitive Surge Current

100

T = 25C J 10 T = 125C J 16RIA Series (1400 to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Instantaneous On-state Voltage (V)

Fig. 14 - Forward Voltage Drop Characteristics

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16RIA Series
Bulletin I2404 rev. A 07/00
Transient Thermal Impedance Z thJC (K/W) 10 Steady State Value RthJC = 1.15 K/W (DC Operation) 1

0.1 16RIA Series

0.01 0.001

0.01

0.1 Square Wave Pulse Duration (s)

10

Fig. 15 - Thermal Impedance Z thJC Characteristics


100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (b)
Tj = -65 C Tj = 25 C

(1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, (a)

tp = 4ms tp = 2ms tp = 1ms tp = 1ms

Tj = 125 C

1 VGD IGD 0.01

(1)

(2) (3)

(4)

0.1 0.001

16RIA Series Frequency Limited by PG(AV) 0.1 1 10 100

Instantaneous Gate Current (A)

Fig. 16 - Gate Characteristics

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