PD - 95137

IRF7416PbF
l l l l l l l l

Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free

HEXFET Power MOSFET

S
1 8 7

A D D D D

S
S G

VDSS = -30V RDS(on) = 0.02

Description

Top View

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter
I D @ TA = 25C I D @ TA = 70C I DM P D @TA = 25C VGS EAS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ - 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range

Max.
-10 -7.1 -45 2.5 0.02 20 370 -5.0 -55 to + 150

Units
A W
mW/C

V mJ V/ns C

Thermal Resistance Ratings

Parameter
R JA Maximum Junction-to-Ambient

Typ.

Max.
50

Units
C/W

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1
06/06/05

IRF7416PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss

Min. -30 -1.0 5.6

Typ. Max. Units Conditions V VGS = 0V, ID = -250A -0.024 V/C Reference to 25C, ID = -1mA 0.020 VGS = -10V, ID = -5.6A 0.035 VGS = -4.5V, ID = -2.8A V VDS = VGS, ID = -250A S VDS = -10V, ID = -2.8A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, T J = 125C -100 VGS = -20V nA 100 VGS = 20V 61 92 ID = -5.6A 8.0 12 nC VDS = -24V 22 32 VGS = -10V, See Fig. 6 and 9 18 VDD = -15V 49 ID = -5.6A ns 59 RG = 6.2 60 RD = 2.7, See Fig. 10 1700 VGS = 0V 890 pF VDS = -25V 410 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
I SM

VSD t rr Q rr

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge

Min. Typ. Max. Units 56 99 -3.1 -45 -1.0 85 150 V ns nC A

Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = -5.6A, V GS = 0V TJ = 25C, IF = -5.6A di/dt = 100A/s

G S

Notes:

Repetitive rating; pulse width limited by Starting TJ = 25C, L = 25mH

max. junction temperature. ( See fig. 11 )

ISD -5.6A, di/dt 100A/s, VDD V(BR)DSS,

T J 150C

RG = 25, IAS = -5.6A. (See Figure 12)

Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec.

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IRF7416PbF
100
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

100

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

10

10

-3.0V

-3.0V 20s PULSE WIDTH TJ = 25C A

0.1 1 10

1 0.1 1

20s PULSE WIDTH TJ = 150C A

10

-VDS , Drain-to-Source Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.0

TJ = 25C TJ = 150C
10

R DS(on) , Drain-to-Source On Resistance (Normalized)

I D = -5.6A

-ID , Drain-to-Source Current (A)

1.5

1.0

0.5

1 3.0 3.5 4.0

VDS = -10V 20s PULSE WIDTH

4.5 5.0 5.5

0.0 -60 -40 -20 0 20 40 60 80

VGS = -10V

100 120 140 160

-VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRF7416PbF
4000

-VGS , Gate-to-Source Voltage (V)

V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd

20

I D = -5.6A VDS = -24V VDS = -15V

16

C, Capacitance (pF)

3000

Ciss
2000

12

Coss

1000

Crss

0 1 10 100

0 0 20 40

FOR TEST CIRCUIT SEE FIGURE 9

60 80

100

VDS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

100

100

-ISD , Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED BY RDS(on)

-ID , Drain Current (A) I

100us

TJ = 150C
10

10 1ms

TJ = 25C

1 0.4 0.6 0.8 1.0

VGS = 0V

1.2

1 0.1

TA = 25 C TJ = 150 C Single Pulse

1 10

10ms

100

-VSD , Source-to-Drain Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRF7416PbF
VDS
QG

RD

-10V
VG

V GS RG -10V

D.U.T.
+

Charge

Pulse Width 1 s Duty Factor 0.1 %

Fig 9a. Basic Gate Charge Waveform

Current Regulator Same Type as D.U.T.

Fig 10a. Switching Time Test Circuit

50K 12V .2F .3F

td(on)

tr

t d(off)

tf

VGS 10%
+ D.U.T. VDS

VGS

90%
-3mA

VDS
IG ID

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

100

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJA )

D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.1 1 10 100

10

0.1 0.0001

0.001

0.01

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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QGS

QGD

VDD

IRF7416PbF
1000
VDS
L

EAS , Single Pulse Avalanche Energy (mJ)

RG

D.U.T
IAS

800

VDD A DRIVER

ID -2.5A -4.5A BOTTOM -5.6A TOP

-20V

tp

0.01

600

400

15V

Fig 12a. Unclamped Inductive Test Circuit

I AS

200

0 25 50 75 100 125 150

Starting TJ , Junction Temperature (o C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

tp V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

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IRF7416PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG VGS*

**
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ -

VDD

Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=

P.W. Period

[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[ VDD]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS

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IRF7416PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00

A1 .0040

8 6 E 1

5 H 0.25 [.010] A

c D E e e1 H K L y

.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8

1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8

6X

e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 C A B y

K x 45

8X L 7

8X c

NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]

F OOTPRINT 8X 0.72 [.028]

6.46 [.255]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER

INT ERNAT IONAL RECT IFIER LOGO

XXXX F7101

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IRF7416PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/05

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