New Product Guide

2002-9

3.3 kV IEGT Module

Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching. Also, there have been tendency for devices to becoming lager in capacity and size, because of inverter equipment performances have been improved. Consequently, there is now demand for a device with a new type of structure. To meet these needs, Toshiba has developed and released new products which allows the compact construction while exhibiting a low on-state voltage and low power dissipation. These devices electrodes and gate structures are arranged in a unique structural configuration.

Features
1. The IEGT (Injection-enhanced gate transistor) is designed in such a way that large numbers of electrons accumulate at its electrodes. This has been achieved by optimizing the gate structure and the distance between the electrodes. In addition, IEGTs exhibit low On-state voltage and enable the compact construction, high-speed operation.
Cathode

GTO
Gate carrier distribution p

Emitter n

IGBT
Gate carrier distribution p

Emitter n

IEGT
Gate carrier distribution

n p

Gate oxide

electron
hole

Accumulation layer
hole hole

electron n n+ p

n+ p

hole

electron

n n+ p

Anode (500700) m

Collector (5070) m

Collector (5070) m

Carrier concentration is high :effect of carrier injection from both anode and cathode sides.

Carrier concentration at emitter side is low :holes injected from collector pass to emitter electrode through p-base layer.

Carrier distribution is high similar to that of GTO :effect of electron injection enhancement.

low on-state voltage higher blocking voltage

high saturation voltage lower blocking voltage

low saturation voltage higher blocking voltage

Figure 1 Comparison of typical carrier distribution in GTO thyristor, IGBT and IEGT 2. The switching loss at turn-off (Eoff) reduced about 30% from conventional device. (Figure 2) 3. The high short-circuit capability is realized without any oscillation under VCC = 2500 V. (Figure 3)

Figure 2 Comparison of Eoff-Vce(sat)

Figure 3 Short-circuit waveform example

4. High reliability and low thermal resistance plastic-module package used. It is easy to install them in equipment Use of a base plate with a small coefficient of thermal expansion and optimization of the internal structure and components have resulted in excellent lifetime characteristics, such as the number of thermal fatigue and number of power cycles. @ Base plate material: Al-SiC (MMC) High CTI ( Comparative Tracking Index ) materials are used. Insulation withstand voltage for package surface has been achieved. The lowest thermal resistance 8 K/kW (IEGT part) is realized as an device which used MMC base plate (140 190 mm size device).

Device Appearances
MG800FXF1US53 MG1200FXF1US53

Line-up: 3 devices
Product No. MG1200FXF1US53 MG800FXF1US53 MG400FXF2YS53 (#1) Base-size 140 190 mm 140 130 mm 140 130 mm Ratings 1200 A 800 A 400 A Circuit 1 in 1 1 in 1 2 in 1 Thermal Resistance (Junction to case) IEGT part 8 K/kW 12 K/kW 24 K/kW (#2) FRD part 16 K/kW 24 K/kW 48 K/kW (#2)

#1: #2:

Under development Single side device

The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document shall be made at the customer's own risk.

Electronic Devices Sales & Marketing Division

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2002 TOSHIBA CORPORATION Printed in Japan

3728C-0209 PC-DQ