The MOS Structure (analogous to a capacitor)

VG

Gate

MOS Transistor

Oxide thickness (10 nm to 50 nm) P-type doped Si substrate

VB
Carrier concentration and its local distribution can now be manipulated by external voltages.

Fermi potential which is a function of temp and doping is given by Fp=(EFp Ei)/q =(kT/q)ln(ni/NA) [ -ve for p type and +ve for n type Si]
Eo q 51.4 = eV (electron affinity) Ec Ei EFP Ev
ENERGY BAND DIAGRAM OF P type Si SUBSTRATE.

Bandgap energy 1.1eV qFp =0.2 eV 0.35 eV

Energy required for an electron to move from fermi level to free space Energy band diagram: (a) metal, (b) semiconductor, (c) insulator = Work function = qs=q (+ Ec-EF)

Energy-band diagram of a MOS-system under thermal equilibrium (VDS = 0) (3 layers are brought in physical contact)

Due to the difference in the work function of Al & Si , a voltage drop occurs across MOS Structure. Part of built in Voltage drop occurs within the insulator layer and remaining, just beside the Si-Oxide interface. Thus energy bands of Si bend in this region.

Fermi levels of metal and semiconductor are at same levels. But bulk fermilevel is not much affected by Band bending. However, Surface fermilevel moves towadrs the intrinsic value. Fermi potential at the surface, also called Surface potential (s) is less than bulk Fermi potential (M).
Work function of doped Si = qs=q (+ Ec-EF) = 4.15+0.75 = 4.9 eV Work function of Aluminum = qM=4.1 eV Built in potential difference across the MOS system is qM-qs = -0.8 eV

MOS System under external bias

The cross-sectional view and the energy band diagram of the MOS structure operating in accumulation region.

If external voltage corresponding to this difference (M s) is applied, bending of energy bands near the surface can be compensated. This is called flat band voltage VFB.

MOS System under external bias

The cross-sectional view and the energy band diagram of the MOS structure operating in depletion mode, under small gate bias.

MOS System under external bias

The cross-sectional view and the energy band diagram of the MOS structure operating in surface inversion mode, under larger gate bias.

Thickness of depletion region in the depletion mode

xd is a function of the surface potential s. Let mobile hole charge in thin horizontal layer || to surface is dQ = -q.NA.dx

Inversion layer
A surface is said to be inverted when density of mobile electrons on the surface becomes equal to o the density of holes in the bulk. For this condition, surface potential and the bulk potential have to become equal in magnitude but opposite in polarity i.e. s = -F.

Change in surface potential required to displace the charge sheet dQ by a distance xd away from the surface can be found out by using Poisson equation: ds = - x. (dQ/Si) = (q.NA.x) / Si Integrating above along the vertical direction from F to s and 0 to xd we obtain: s-F = (q.NA.xd2) / 2.Si Hence, xd = [ (2.Si. | s-F |) / q. NA] And the depletion layer charge density is given by QB = -q.NA.xd = -(2q.NA.Si.|S F| )

Any further increase in the gate voltage will not increase the depletion width. So, max depletion width is given by xdm= [ (2.Si. | -F-F |) / q. NA] = [ (2.Si. | 2F |) / q. NA]