List of Acronyms Used in the Book and Some Symbols

BJT BNC c.m. COG CAD CGS CM DMM DVM EEPROM EMC EM1 EMV ESD ESR FEA FET IGBT
1, b
[io,

JFET LED LlSN MKS MLC MOSFET MOV MPP

Bipolar junction transistor, now commonly used only in small-signal applications. A type of circular connector used for coax. cm2. Circular mils; 1 c.m. = 5 . 0 7 ~ (cee zero gee) A type of capacitor with essentially zero temperature coefficient. Computer-aided design, a common design step in which software is used to lay out traces on a PCB. Centimeter-gram-second; one of the standard systems of units. Common mode; noise current that is in both the power and return lines relative to ground. Digital multimeter. Digital voltmeter. Electrically erasable programmable read-only memory. Electromagnetic compatibility; ability of two or more systems to work together in the presence of each others electronic noise. Electromagnetic interference; electronic noise causing problems in another system. Electromagnetic vulnerability; susceptibility to electronic noise. Electrostatic discharge; the little spark you get when shuffling your feet across the carpet. Equivalent series resistance (of a capacitor). Finite element analysis. Field effect transistor, see MOSFET. Insulated gate bipolar transistor; the type of power device commonly used in off-line converters. Input bias current; the average leakage current into the inverting and noninverting terminals of a comparator or op amp. Input offset current; the difference between the leakage currents into the inverting and noninverting terminals of a comparator or op amp. Junction field effect transistor (not commonly used in converters). Light-emitting diode; frequently used for a status display of the health of a converter. Line impedance stabilization network; a 5M impedance used for EM1 measurements. Meter-kilogram-second; one of the standard systems of units. Multilayer ceramic; a very low ESR capacitor. Metal oxide semiconductor field effect transistor; the most common power device used in converters. Metal oxide varistor; a type of voltage clamping device used for high power transients. Molypermalloy powder; a type of magnetic material used for DC inductors.

239

240
MTBF NiCd NiH NiMH NM NPN NFQ PCB PFM PNP PWM
RDS.on

App. 1

List of Acronyms Used in the Book and Some Symbols

rf

RWZ) RMS TTL WLO VDE VRM Vr

VOS

WCA

Mean time between failures. Nickekadmium; a type of rechargeable cell. Nickel-hydrogen, a type of rechargeable cell. Nickel-metal hydride; a type of rkchargeable cell. Normal mode; noise current that flows in the power line relative to return. One of the two types of BJT. A t p of capacitor with essentially zero temperature coefficient. ye Printed circuit board. Pulse frequency modulation. One of the two types of BJT. Pulse width modulation. On resistance, drain to source; the resistance of a fully on MOSFET. Radio frequency, electromagnetic radiation, used in this book as it pertains to EMI. Right-half-plane (zero); position of a zero that can cause instability in a system. Root-mean-square; one method of doing worst-case analysis. Transistor-transistor logic; a standard type of logic gate. Under-voltage lockout; a type of circuit that keeps an integrated circuit off until the supply voltage is high enough. A standards group in Europe responsible for safety and EMC; also refers to standards from this group. Voltage regulation module. Forward voltage; the voltage drop from anode to cathode of a diode. Offset voltage; the equivalent input voltage to a comparator or op amp even when both inputs are tied together. Worst-case analysis.

Data Sheets for Worst-Case Analysis

The figures in this Appendix provide the datasheets used to

worst-case analysis of Chapter 10.

extract parameters

for the

241

242

App. 2

Data Sheets for Worst-case Analysis

COMPUTER DIODE
General Purpose Switching
FEATURES Metallurgical Bond Qualified to MIL-S-19500/116 Planar Passivated Chip DO-34 or DO-35 Package Non-JANAvailable

1N914; JAN, JANTX 1N914 1N4148; JAN, JANTX, JANTXV 1N4148 JAN, JANTX, JANTXV 1N4148-1 1N4531; JAN, JANTX, JANTXV 1N4531

DESCRlPnOlY This series is very popular for general purpose switching applications in electronic equipment.

ABSOLUTE MAXIMUM RATINGS, A 259: T Reverse Breakdown Voltage . . . . .. .. . . . . . . . . . . . . . . . . . . . , . , . . . . . . . . . . . , . , . . . . . lOOV Peak Working Voltage . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . .. , . . , . , . , . ,75V Average Output Current, 1N914 .. . . . . . . . . . . . . . , . . , . , . . , .. . . , , , .. ..75mAdc 1N4148.. . . . . . . .... 1N4148-1 . . . . . . . . . . . . . . . . . . . . . , . . , . , . , . . . . . .. ZOOrnAdc 1N4531. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , .. 125mAdc Surge Current, 8.3rns . . . . . .. . . . . . . . . . . , . , . , . , , . . . , . , .. ,500mA Operating Temperature Range .. . . .. . . .. . . . . .. . . . . . . . . . . . .. . . . . . -65C to +175"C Storage Temperature Range . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +2OO"C

. . .

MECHANICAL SPECIFICATIONS J. JTX 1N914 J. JTX. JTXV 1N4148 J. JTX. JTXV lN4148-1 J. JTX. JTXV 1N4531
A

m-34
LN453l

d0-35 1n914 1N4148

- f L e - &
J. JTX 6 JTXV 1N4531 ,
YILUYRERS

c J, JTX 1N914
YllLlYrnRS

203-305
018- 022

3 56- 7 62

ole- 022
J. JTX. JTXV 1N4148 and 114148.1
INCHES
YlUlYETERS 142-191 3 5 6 - 4 57

ole- 022

Figure A2.1

Vendor's data sheet for diode iN4148. (Courtesy of Unibode Semiconductor Products, Watertown MA.)

Data Sheets for Worst-case Analysis

243

ELECTRICAL SPECIFICATIONS (at 25% unless noted) Reverse current

@ 25%

1N914; J. JTX 1N914 J. JTX. JTXV 1N4148-1N4148-1 1N4531; J, JTX. JTXV 1N4531

R0vew

Current
@ 25'C

Peak Reverse Current

@ 25'C

Reverse Current
@ 1M'C

Reverse current @ 1W.C lOOpAdc V ,

25nAdc

0.5pAdc V = 75Vdc ,

100~A (pk) V ,

MpAdc
V ,

@ V = MVdc ,

= 100'4 (pk)
Fomard

= MVdc
Reverse Recovery Time

@ = 1Ndc

Fomard

voltam

Foward

Recovery
VOlbBe

Recovery Time

1.OVdc I = lOmAdc ,

5.0V (pk)

Mns

5ns I, = I = lOmA , R, = 100 ohms

I = SOrnAdc ,

I = SOmAdc ,

V = OV, f = 1MHz , v . ; ~= 50mV (pk-pk)

2.8 pF @
V ,

= l.SV, f = 1MHz

Reverse Voltage vs. Reverse Current

0.WI .w2
,005

5 ; I 5 u
w z

Q, 9

0.01
.OZ

.os
0.1
.2

.5
1.0

2
1 :

! .
~~~~

20

M lOOl/I
.8 .9 1.0 1.1 1.2 1.31.4 1.5

II I 1 ! ! 1
V ,

. I .2 .3 ,4 .5 .6 .7
V,

H-r-1 I I I

140 130 120 110 100 90 80 70 60 M 40 30 20 10 0

- FORWARD VOLTAGE (VI

Figure A2.1
(Confinued)

- REVERSE VOLTAGE (V) I % OF PIV)

244

App. 2

Data Sheets for Worst-case Analysis

2N3903
MAXIMUM RATINGS

2N3904*
CASE 29-04, STYLE 1 TO-92 [TO-226AA)
3 Collmor

8. 88

1 3

+3
-

1 Emitter

*THERMAL CHARACTERISTICS
Qunnri.tie
Thermal Resistance, Junction to Ambient
~~~

Spbol
R~JA

Mu

Unli

GENERAL PURPOSE TRANSISTORS

NPN SIUCON

200
8. 33

"CMI
"c/w

Thermal Resistance, Junction to Case

RBJC

Collector-Emitter Breakdown Voltage(1l (IC 1.0 mAdc, Ig = 0 ) = Colleclor-Bass Breakdown Voltage (IC 10 pAdc. IE = 0) Emitter-Base Breakdown Voltage l l = 10 pAdc. IC= 0) ~

V(BR)CEO V(BR)CBO V[BR)EBO

40
60

Vdc

50

VdC
Vdc nAdc nAdc

6.0

Base Cutoff Current (VCE = 30 Vdc, VEB

IBL
=

3 0 Vdc) .

Collector Cutoff Current NCE 30 Vdc. V E = 3.0 Vdcl = ~

kEX

50

ON CHARACTERlsTlCS
DC Current Gain111 (IC = 0.1 mMc. VCE = 1.0 Vdc)

2N3903 2N3904
hFE

(IC = 1.0 mMc, VCE = 1.0 Vdc)

2N3903 2N3904 2N3903 2N3904 2N3903 2N3900 2N3903 2N3904

I
I

E 35
70

(IC = 10 mAdc, VCE = 1.0 Vdcl

(IC = 50 mAdc, VCE = 1.0 Vdcl

60 1 W

(IC = 100 mAdc, VCE = 1.0 Vdc) Collector-EmitterSaturation Voltsgell) (IC5 10 mAdc, Ig = 1.0 mAdc1 (IC= 53 mAdc. Ig 5.0 mAdc)

15 Vdc

02 . 03 .
Vdc 0.85

BsraErninar Saturation Voltage(1) I I r = 10 mAdc. .1 = 1.0 mAdcl

0.95
Bandwidth Producd Cumnt-Gain (IC 10 mAdc, VCE = 20 Vdc, f = 100 MHzI

fT

2N3903 2N39W

250

300

Mnz

Figure A2.2 Vendors data sheet for NPN transistor 2N3904. (Copyright of Motorola, used by permission.)

Data Sheets for Worst-case Analysis

213903 2N39W

245

Daisy Tims

Rim Time
Storage Time
Fall lime

(Vcc = 3.0 Vdc. V ~ = 0.5 Vdc, E IC = 10 mAdc, Igl = 1.0 mAdc) (Vcc = 3.0 Vdc, IC = 10 rnAdc. Igl = Ig2 = 1.0 rnAdc)

td
tr

36
36 175 200 50

ne ns ne ns

2N3903

ts
'1

2N3904

FIGURE 1 -DELAY AND RISE TIME EOUIVALENT TEST CIRCUIT

FIOURE 2 STORAOE AND FALL TIME EQUIVALENT TEST CIRCUIT

- 0.5 V

< 1 nr

: C, < 4 pF'
IN916
.Total shunt capacltanm of ton 110 and WnnmOR

TYPICAL TRANSIENT CHARACTERISTICS

-TI FIOURE 3 - CAPACITANCE
10

26C "-1,

126%

1.o 5.0

53.0
3
2.0

IO
0.1
0.2

0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 REVERSEBIASVOLTAErnHIln)

IO

M 30 Io

Figure A2.2

(Confinued)

246

App. 2

Data Sheets for Worst-case Analysis

213903 213904

FIQURE 6 500

- TURNQN TIME

5m 300

FIGURE 6 - RISE TIME

300

lm
im

zw

3;
i o

100

io

m
10

5 m
10
20

g5O

10 .
5.0

IO

30

50

io IO m JO t. ayLtcT0llm l 0 u l

50

io im

lm

70 5.0 10

20

30

5.0 1.0 10

20

30

50 70 100

2m

t.m m c m cuRRcI(T IW
FIQURE 8

FIGURE 7
y10

- STORAQE TIME

- FALL TIME

x m

ma

i'

2 im

EJO
r f m 10

10
50

IO

20

30

50

io IO

JO

50

m im

mo

1.0

2.0

3.0

5.0

xo

IO

20

JD

50

io

im

mo

IC ccllMcTcmc m0 m

IC. CwEclCaC M W N l 0

TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

FIGURES VCE

12
10

6 0 Vdc. TA X0C, Bmndwidth 1 0 HZ I4

12

- -

FIGURE 10

IO

I'
Y!4

I'

I s
Y ! 4

2
0

01

02

04

IO

20

40

IO

u)

im

0 01

02

04

10

20

40

10

20

49

IW

I FRfWEMXkbl

RC SWRCE RlSlSlUnE (kohmrl

Figure A2.2 (Continued)

Data Sheets for Worst-case Analysis

213903 2N3904
h PARAMETERS
(VCE FIGURE 11 -CURRENT GAIN
100
10 Vdc, f = 1.0 kHz, T A = 2 9 0

247

FIGURE 12 -OUTPUT ADMITTANCE

zw

E Im =
u

lWI
10

6
Ill I 1 I I 1 1 1 1 1
0.2

70
M

t 5 5.0
I
2.0

30
0.1

IO
0.3
05 I0 2.0 3 0 IC. COLLEClMI C U R R E l Imll 5.0 10 0.1

0 2 0 5

05 1.0 2.030 IC.COLLECTOR CURRfNT ImlJ

5.0

IO

FIGURE 13 - INPUT IMPEDANCE 20 10 10

7.0

FIGURE 14- VOLTAGE FEEDBACK RATIO

I f
p -

so
20

& 5.0
5

2
3
L

3.0

g 2.0
w 0

E 2

10

os
02
01

? 1.0 0.1

0.5

02

03

05 30 10 20 iC, cottEcrmcum~m ~ I

50

IO

0.1

0.2

0.3

0.5 1.0 2.03.0 IC. MULCTDR cwmM)

5.0

IO

TYPICAL STATIC CHARACTERISTICS

FIGURE 15

- DC CURRENT GAIN

IC. COLLECTMI CURREHI ImIJ

Figure A2.2

(Continued)

248

App. 2

Data Sheets for Worst-case Analysis

2N3903 2N39W

FIGURE 16
1.0

- COLLECTOR SATURATION REGION

0
0.01

0.02

0.03

0.05

0.07

0I

0.2 0.3 0.5 1. BASE CURRLNT WAI

0.7

1.0

2.0

3.0

5.0

7.0

10

FIGURE 18

- TEMPERATURE COEFFICIENTS

io COLLECTOR CURRENT i d

Figure A2.2

(Continued)

Data Sheets for Worst-case Analysis

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

I
Vabe +36orr18 +30 or r15 36
I

249

LM139,A LM239,A, LM2901, LM339,A, MC3302

QUAD COMPARATORS
SILICON MONOLITHIC INTEGRATEDCIRCUIT

Quad Single Supply Comparators

These comparators are designed for use in level detection, low-level sensing and memory applications in consumer automotive and industrial electronic applications. 0 Single or Split Supply Operation
0

Low Input Bias Current: 25 nA (Typ) Low Input Offset Current: S O nA (Typ) Low Input Offset Voltage: *1 .O mV (Typ) LM139A Series Input Common Mode Voltage Range to Gnd

0
0 0
0 0

Low Output Saturation Voltage: 130 mV (Typ) Q 4.0 mA TTL and CMOS Compatible
ESD Clamps on the Inputs Increase Reliability without Affecting Device
Operation

MAXIMUM RATINGS

Ratlng I Symbol Power Supply Voltage LM139. AiLM239. AJLM339AJLM2901 vcc MC3302 Input DiHerential Vonage Range VIDR LM139. AiLM239. AlLM339. AJLM2901 MC3302 I

I
I
I

I
I

Unit VdC

Vdc

30

Input Common Mode Voltage Range Outout Short Circuit to Ground (Note 11 . . Input Current (Vin < 0.3 Vdc) (Note 2) Power Dissipation @ TA = 25C Ceramic Plastic Package Derate above 25C

V~CMR
ICP
I I

lin PD

-0.3toVcc Continuous 50
1.o

I
I

Vdc
J

PIN CONNECTIONS

mA
Oulput2

O W 3

8.0

W mWPC "C

oulpul 1

Dulpul4
Gnd
t Inpul4

Junflion Temperature Ceramic 8 Metal Packaae Plastic Package Operating Ambient Temperature Range LM139. A I LM239.A MC3302 LM2901 LM339. A Slotage Temperature Range

TJ T A

175 150 -5510 +I25

vcc

1
I
I

- Input1
"C
t Illputt

-Input4
t Input 3

I
I

I -25to+85

TS~Q

1I
I

4 0 to +85 4 0 1 0 +lo5

010+70 -65 to +I50

1 I
"C

- lnpul2
t

Input 2

-Inpull

VCC

Figure I Circuit Schematic . + Input -Input

p Output
Device LM139J. AJ LM239D. AD LM239J. AJ LM239N. AN LM339D. AD LM339J. AJ LM339N. AN Temperalure Range 5 5 " to +125'C -25" to +85%
PeCke*

0" to +709C
4 0 t o +105"C

Ceramic DIP SO-I4 Ceramic DIP Plastic DIP SO-14 C e r q i c DIP Plastic DIP
p l ~ ~ l ~ l p

b Gnd
NOTE: Diagram shown is for 1 comparator.

~~~~~~

MC3302L MC3302P

4oo

to +850c

Figure A2.3

Vendor's data sheet for Quad Comparator LM139. (Copyright of Motorola, used by permission.)

ELECTRICAL CHARACTERISTICS ( V x = +5.0 Vdc, TA +2SC. unless othefwise noted)

I

u l

-V1(-) 2

GP m l n v, (4 *1.0vde. Vd+) - 0 . vo L 1.5vdc L

+l .o vdz Vf(+) - 0 .
0.JWWcq.m Vl(+) 2 +1.0Vdc. VI(-)

6.0

1 6 130 01 .

400

60 .
-

1 6
130 01 .

400

6.0

1 6
130
0.1

UIO

8.0

1 6 130
0.1

4l a

0.0

1 6

400

60 .

16
130 01 .

500

mA
mV

b* s 4.0 mA

v u
l a

130
01 .

nA

0. V I +5.0 Vdc o

PERFORMANCE CHARACTERISTICS (Vcc +5.0 Vdc. TA Tbw to Thah "ate 9)

Figure A2.3

(Contmued)

Data Sheets for Worst-case Analysis

251

LM139,A, LM239,A, LM339,A, LM2901, MC3302

(Vcc

1.5 Vdc. TA +25% (each comparatoc)u n h othemlse noted.)

Typical Characteristics

nNN4. -1h.d

O f b l VOhOgO

Flgum 5. Input Bbs Currsnt

4 a -- 1.0
0

Flgure 6. Output Sink Current versus Output Saturation Voltage

1.0

er
G
2.0

'.O

i5 ao

Vta. Ourfw.smUmO~wxTAoE (mv)

Figure A2.3 (Conrinued)

252

App. 2

Data Sheets for Worst-case Analysis

UC1825

uc3825

uc2825

High Speed PWM Controller

FEATURES
Compatible with Voltage or Current Mode Topobgies

DESCRIPTION

The UC1825 family of PvllM control ICs is optimized for high frequency switched mode power supply applications. Particular care was given to minimizing propagation delays through the comparators Practical Operation Switching Frequencies and logic circuitry while maximldng bandwidth and slew rate of the to 1MHz error amplifier. This controller is designed for use in either current5orrs PropagatlonDelay to O t u upt mode or voltage mode systems with the capability for input voltage feed-fornard. High Current Dual Totem Pole Outputs (1.5A Peak) Protection circuitry 'includes a current limit comparator with a 1V threshold, a TTLcompatible shutdown port, and a soft s a t pin which tr Wde Bandwidth Error Amplifier will double as a maximum duty cycle damp. The loglc Is fully latched Fully Latched Logic with Double Pulse to provide jitter free operation and prohibit multiple pulses at an outsuppression put. An under-witage lockout sectkn with 8OOmV of hysteresis 8ssures low start up current. During under-voltage lockout, the outputs Pulse-by-PulseCurrent Limiting are high impedance. Soft Start I Max. Duly Cycle Control These devices feature totem pole outputs designed to s m and w sink high peak currents from capacitive loads, such as the gate of a Under-VoltageLockoutwith Hysteresis power MOSFET. The on state is designed 8s a hlgh l e d . Low Start Up Current (1. I mA)

Trimmed Bandgap Reference (5.1V*I%)

LOCK DIAGRAM
Clock
RT

CT

Ramp

EIA Out

N I:

vc
Soft Start Out A
Out

ILIM/SD

Pwr Qnd

vcc
Qnd
VREF
uMIQ?ooDl

Figure A2.4 Vendor's data sheet for P W M controller UC2825. (Courtesy o f Unitrode Semiconductor Products, Watertown MA.)

Data Sheets for Worst-case Analysis

253
uc3825

ABSOLUTE MAXIMUM RATINGS (Note 1) Supply Voltage (Pin8 13,15) ........................ OutDut Current. Sourn or Slnk lPlns 11. 14) . ,
Dc. . . . . . . . .
P u b (0.5m) h a b g Inputs

30V
0.5A 2.0A

.............................

.............................

CONNECTION DIAGRAMS DlL-16 (Top View) J Or N Package

(Pins 1.2,7). .............................. 4.3V to N (Pin 8.9). ................................. -0.3V to 6V Clock O t u Current (Pin 4) . . . . . . . . . . . . . . . . . . . . . . . upt -5mA Error AmplMer Output Current (Pin 3) . . . . . . . . . . . . . . . . 5mA Son Start Slnk Current (Pln 8) . . . . . . . . . . . . . . . . .2omA Oscillator Charging Current (Pin . . . . . . . . . . . . . . . . . .5mA Power Dlsslpatlon ................................ 1W Storege Temperature Range ... . . . . . . . . . +150"C Lead Temperature (Soldering. 10 seconds) 300C N o t a 1 AIJ Vdtages are wflh respect t GND (Fin 10); a//cur: o rmts are @t/w hto, negadhre out ofpart;pln numbers refer to DIL-16 packege. Note 3: Consult Unitrode Integrated Cimit Databodc for hermal Ilmlladons and conslderat/onsof package.

SOIC-16 (Top View) DW Package

PLCC-20 & LCC-PO crop view) Q & L Packages

INV

VREF5.1V

HI
I & out
Clock

vcc
Oul E

vc
Pwr Gnd

RT
CT

out A Gnd
ILtMlSD

Ramp
S o f t Start

UC1825 PARAMETERS

TEST CONDITIONS

MIN

1 Typ

uc2825

uc3825
MAX

MIN

lYP

I MAX

UNlTs

Figure A2.4

(Continued)

254

App. 2

Data Sheets for Worst-case Analysis

uc1811
uc2625

ELECTRlCALCHARACTERISTICS (cont.)

Unlsss 0theMMle s a s h s S p e c l ( i ~ tapply for, Rr = 3 . l k , Cr t d t e e l~~

uc3825

= InF, Vcc = 15V, -55"c*T~425'CforlheUC1825,-4O*~T~<85~CForh UC2825,and O"CcTA<70Cfor the UC3825. TA=TJ.

TEST CONMTlONS

TNs penvneter not 100% iestedin produclion butguarenteed by design.

Figure A2.4 (Continued)

Data Sheets for Worst-case Analysis

255

Prlnted Clrcult Board Layout Conelderatlone High speed circuits demand careful attention to layout and component phcemenf. To assure proper perlbrmance of the UC1825 foUow these rules: 1) Use a ground plane. 2) Damp or clamp parasitic inductive kick energy from the gate of d r k n MOSFElk. Do not allow the output pins to ring below ground. Aseries gate resistor or a shunt 1 Amp
Error Amplifier Circuit

UC1825 uc2825 u 5 Schottky diode at the output pin will s w this purpose. 3) e Bypass vcc, Vc, and WEF.Use 0.1pt= mondlthlcceramk capaciton with low equlMlent serles inductance. Alan less than 1 cm of total lead length for each CapaCitM between the bypassed pin and the ground plane. 4) Treat the thing capacitor, (3, a bypass capadtor. Ake

----Simplified Schematic

I /

Open Loop Frequency Response

5
4

Unity Gain Slew Rate

(VI 3
2

1
0

0.2

0.4

0.8

0.8

1.0

TIME (ps)
100 1K

10K lOOK 1M 10M 100M

FREQ (Hz)
PWM Applications Conventional (Voltage Mode) Current Mode

* A imall flltar mmy bo raqulrrd l o

a u p p r a i i awIICh noli..

Figure A2.4

(Conrinued)

256

App. 2 W Data Sheets for Worst-case Analysis

Oscillator Circuit

UC1825 UC2825 UC3825

Deadtime vs CT (3k I RT < 1OOk) ;

aocrl.

Timing Resistance vs Frequency

IDeadtime vs Frequency

100

WI

I
Figure A2.4 (Continued)

FREa w-4

Data Sheets for Worst-case Analysis

utput Section
Simplified Schematic Rise I Fall Time fCL= 1nF)

257

16

E
$

10

6 0

-Rise I Fall Time fCL=lOnF)

2

Tk* (W

Saturation Curves
3
2

LO
0

16

8
$

10 6
0

L >
1

0
0

0
(I-)

0.6

1.0
LaJT f 4

1.6

Figure A2.4

(Confinued)