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MP4508

TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1)

MP4508
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25C) High collector current: IC (DC) = 5 A (max) High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A) Industrial Applications Unit: mm

Maximum Ratings (Ta = 25C)


Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25C PT Tc = 25C VIsol Tj Tstg 25 1000 150 55 to 150 V C C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 100 5 5 8 0.1 3.0 5.0 W Unit V V V A A W

JEDEC JEITA TOSHIBA

2-32B1B

Weight: 6.0 g (typ.)

Array Configuration
R1 R2 3 6 7 10

12

11

R1 5 k, R2 120

2002-11-20

MP4508
Thermal Characteristics
Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25C) Thermal resistance of junction to case (4 devices operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Rth (j-c) 5.0 C/W Symbol Max Unit

Rth (j-a)

25

C/W

TL

260

Electrical Characteristics (Ta = 25C)


Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 100 V, IE = 0 A VCE = 100 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 30 mA, IB = 0 A VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 3 A, IB = 12 mA VCE = 3 V, IC = 0.5 A VCB = 50 V, IE = 0 A, f = 1 MHz Min 0.3 100 100 1000 1000 3 Typ. 40 0.5 Max 10 10 2.0 2.0 2.5 Unit A A mA V V

Saturation voltage

V MHz pF

Transition frequency Collector output capacitance Turn-on time

IB2

Input 20 s

IB2 IB1

Output 10

Switching time

Storage time

tstg

3.0

VCC = 30 V Fall time tf IB1 = IB2 = 12 mA, duty cycle 1% 2.0

Emitter-Collector Diode Ratings and Characteristics (Ta = 25C)


Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 5 A, VBE = 3 V, dIF/dt = 50 A/s Test Condition Min Typ. 1.0 8 Max 5 8 2.0 Unit A A V s C

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MP4508

IC VCE
8 100 30 Common 15 emitter Tc = 25C 8 Common emitter VCE = 3 V

IC VBE

(A)

7 6 3 4 1 2 IB = 0.3 mA

(A) Collector current IC


6 4

Collector current

IC

Tc = 100C 25

55

0 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 4.0

Collector-emitter voltage

VCE

(V)

Base-emitter voltage VBE

(V)

hFE IC
10000 VCE = 3 V 5000 Tc = 100C 25 Common emitter 2.8

VCE IB
Common emitter Tc = 25C 2.4 8 7 6 5 4 3 2 1 IC = 0.1 A 0.4 0.1 0.3 1 3 10 30 100 300 500

hFE

DC current gain

1000 500 300

Collector-emitter voltage
3 10 30

55

VCE
0.3 1

3000

(V)
2.0 1.6 1.2 0.8

100 50 0.05 0.1

Collector current

IC

(A)

Base current

IB

(mA)

VCE (sat) IC
10 10 IC/IB = 250

VBE (sat) IC
Base-emitter saturation voltage VBE (sat) (V)
Common emitter 5 3 Tc = 55C 25 100 IC/IB = 250

Collector-emitter saturation voltage VCE (sat) (V)

Common emitter 5 3

Tc = 55C

0.5 0.3 0.1

100

25

0.5 0.3 0.1

0.3

10

0.3

10

Collector current

IC

(A)

Collector current

IC

(A)

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MP4508

rth tw
300 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width.

(C/W)

100

(4)

rth Transient thermal resistance


30

(3) 10 (2) (1) -No heat sink and attached on a circuit board(1) 1 device operation 1 (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 0.3 0.001 0.01 0.1 1 10 Circuit board 100 1000

Pulse width

tw

(s)

Safe Operating Area


30 8

PT Ta
(1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (4) (3) 4 (2) (1) 2 Circuit board

10 5

100 s* 10 ms* 1 ms*

Collector current

1 0.5 0.3

Total power dissipation

IC

(A)

PT

IC max (pulsed)*

(W)

0 0

40

80

120

160

200

*: Single nonrepetitive pulse Tc = 25C 0.05 Curves must be derated linearly with increase in temperature. 0.03 1 3 10

0.1

Ambient temperature Ta (C)

VCEO max 30 100 200

Collector-emitter voltage VCE

(V)

Tj PT
160

(C)

Junction temperature increase Tj

(1) 120

(2) (3) (4)

Attached on a circuit board 80

Circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 0 0 2 4 6 8 10

Total power dissipation

PT

(W)

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MP4508

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.

2002-11-20

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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