BiS 672

NEMS

Fall, 2010

Homework #2 Semiconductor Physics

[Problem 1] Most values are experimental (Problem 1.18 in Muller & Kamins) The values in Table 1.3 and 1.4 are not entirely consistent. To see that this is the case, (a) Calculate Eg(T =300K) using the equation in Table 1.4 and compare the result with Eg in Table 1.3. (b) Use both values of Eg to calculate ni from Equation 1.1.25 with Nc and Nv as given in Table 1.3. (c) Calculate ni at 300K using the temperature-variation formula in Table 1.4. [Note] The calculated inconsistencies reflect the fact that values in the tables are determined from measurements using a variety of experimental methods. Based on many experiments, a value of ni equal to 1.45x10 10cm-3 for silicon at 300K is widely accepted. The degree of precision of many other parameters is unknown.

Department of Bio and Brain Engineering

Prof. Young-Ho Cho

KAIST

BiS 672

NEMS

Fall, 2010

Department of Bio and Brain Engineering

Prof. Young-Ho Cho

KAIST

BiS 672

NEMS

Fall, 2010

(Ec Ei ) (Ei Ev ) ni = N c exp = N v exp (eq. 1.1.25) kT kT

[Problem 2] Ef location and Compensation Calculate ( Ef-Ei) of silicon at 300K for the following doping situations: (a) Boron: i) 10 10cm-3; ii) 2x10 15cm -3; iii)1018cm-3 (b) Phosphorous: i) 10 10cm-3; ii) 2x1015cm-3; iii)1018cm -3 [Note] This is not just a number-crunching problem. Think about the condition when ni is negligible in n and p calculations.

[Problem 3] Doping Concentration, Mobility and Resistivity Calculate the resistivity of silicon at 300K for the following doping situations: (a) Boron: i) 1015cm -3; ii) 1017cm-3; iii) 10 18cm-3. (b) Boron concentration of 1016cm-3 plus the following concentrations of phosphorous: i) 5x1015cm-3; ii) 10 17cm-3; iii) 1018cm -3.

Department of Bio and Brain Engineering

Prof. Young-Ho Cho

KAIST

BiS 672

NEMS

Fall, 2010

[Problem 4] Velocity Saturation Consider a uniformly-doped silicon resistor (refer to the figure) doped with phosphorous concentration of 10 15cm-3.

L W I T Ohmic contact V

(a) Obtain the expression for current I in terms of q, vd, Nd, and resistor dimension ( W, L, T) (b) Using Equation(1.2.12) and the result of (a), plot the I-V curves of the resistor when i) L =10m, W=100m, and ii) L =1m, W=10m. (Draw the curves in a graph for V from 0 to 5volts and T =0.5m) [Note] For VLSI devices, dimensions of geometries are below 1m. For the VLSI geometries, the electric field due to applied voltage can be very high and the drift velocity is not linearly proportional to the electric field.

vd = vl c

1 1 + ( c )

(eq. 1.2.12)

The parameters vl, c, and in eq. 1.2.12 are given (as a function of the absolute temperature T) in Table 1.2.

[Problem 5] Diffusion Current (Problem1.10 in Muller & Kamins) The electron concentration in a piece of uniform, lightly-doped, n-type silicon at room temperature varies linearly from 10 17cm -3 at x=0 to 6x10 16cm-3 at x=2m. Electrons are supplied to keep this concentration constant with time. Calculate the electron current density in the silicon if no electric field is present. Assume n =1000cm2V -1s -1 and T=300K.

Department of Bio and Brain Engineering

Prof. Young-Ho Cho

KAIST