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Bipolar Junction Transistors

BJT-TO92

The first transistors were Bipolar Why is that RAMs nowadays unipolar?
From http://nina.ecse.rpi.edu/shur/Alphab.htm
SDM 2, Michael Shur 1999-2009

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History of Semiconductors

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1821: Thomas Seebeck discovered semiconductor properties of PbS 1833: Michael Faraday reported on conductivity temperature dependence of semiconductors 1875: Werner von Siemens invented a selenium photometer 1878: Alexander Graham Bell used this device for a wireless communication system 1907 Round demonstrated the first LED (using SiC) 1947: Bardeen, Brattain, and Shockley discovered a Bipolar Junction transistor

Seebeck

von Siemens

SDM 2, Michael Shur 1999-2009

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Introduction
First transistor in practical use (invented in 1947, used in 1950 - 1960s) Largely replaced by CMOS but still a very important device (especially in high-speed and high power applications) Heterojunction bipolar transistor - high performance devices (including Si-Ge HBTs)
SDM 2, Michael Shur 1999-2009

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Bipolar Advantages
Vertical Current flow - high speed for large areas High current drive capability because of the large area High transconductance (exponential dependence of current on voltage) High breakdown voltage possible Fixed threshold voltage Low 1/f noise
SDM 2, Michael Shur 1999-2009

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Outline
BJT Basics
Principle of operation Operation regimes Circuit configurations IV characteristics

SDM 2, Michael Shur 1999-2009

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BJT Basics
emitter base collector

p-n-p
Two back-to-back p-n junctions sharing a common base region

SDM 2, Michael Shur 1999-2009

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BJT structure

From http://www.hl.pc.uec.ac.jp/~hays/electronics/lecture/chapter5.htm SDM 2, Michael Shur 1999-2009

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Input and Output Loops

Input current Transistor

Output current

+
Input Voltage

+
Output voltage

SDM 2, Michael Shur 1999-2009

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Equivalent circuit

emitter

collector base

Equivalent circuit of ideal n-p-n BJT


SDM 2, Michael Shur 1999-2009

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Transistor design and diffusion length


base base

emitter

collector

emitter p n

collector p

+
base Electron diffusion length

+
base Hole diffusion length

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Schematic BJT Layout for IC


SiO 2 Base contact Emitter contact n + emitter p base Collector contact

n+ collector plug

n collector n + buried layer p bulk

From T. A. Fjeldly, T. Ytterdal, M. S. Shur, Introduction to Device Modeling and Circuit Simulation, Wiley, New York , 1998

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Schematic diagram of a BJT and Base Spreading Resistance

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Typical Doping Profile


-3 ) Concentration (cm 10
21

10 19 10
17

..

10

15

n+ 0 0.8

p 1.6

n 2.4 3.2
13

Distance (m)
SDM 2, Michael Shur 1999-2009

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Band diagram and field profile


Emitter Base Collector

qVbe Ec EF Ev
(n)

EF

( p)

qVcb E (n) F
Distance

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Band diagram of p-n-p transistor


Ec

Emitter
EFp

Base

Ev

EFn

Collector
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Principle of Operation
Emitter Ie I ne I rb Ic n+ p n Collector

I pe Ib
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Base

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Minority carrier injection


emitter base collector

Carriers are injected into the base from the emitter by forward biasing the E-B junction (normal operation)
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Minority carrier injection into the base


The base is much shorter than the carrier diffusion length the carriers traverse the base to reach the collector The base remains neutral (except for the junction depletion zones)

Depletion regions
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Minority Carrier Injection Equations

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Electron concentration in the base at the boundary of the forward biased emitter-base depletion region is given by nbe = nbo exp Vbe / Vth >> nbo where n bo = n ib2/Nab, n ib is the intrinsic carrier concentration in the base region, Nab is the acceptor doping density in the base region, Vth = kBT/q is the thermal voltage, and Vbe is the emitter-base voltage ( Vbe >> Vth ). Hence, inority carriers are supplied (we say injected ) into the base region from the emitter region. Holes are injected into the emitter region, just like electrons are injected into the base. The minority carrier (hole) concentration in the emitter at the boundary of the emitter-base depletion region is given by

peb = peo exp (Vbe / Vth ) >> peo where

peo = n ie 2/Nde , n ie =

n ib is the intrinsic carrier concentration , Nde is the donor doping density in the emitter region. However, since Nde >> Nab the number of holes injected into the emitter region is much smaller than the number of electrons injected into the base: peb << nbe .
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Law of the Junction

nbe = nbo exp (Vbe Vth ) >> nbo

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Injection

nbe = nbo exp (Vbe / Vth ) >> nbo


peb = peo exp (Vbe / Vth ) >> peo
However, since Nde >> Nab the number of holes injected into the emitter region is much smaller than the number of electrons injected into the base:

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Regimes of operation

Emitter-base bias Forward Reverse Forward Reverse

Collector-base bias Mode Reverse Forward Forward Reverse Forward active mode Reverse active mode Saturation mode Cutoff mode

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Diffusion equation for minority carriers in the base

d nb nb nbo Dn =0 2 nl dx
x x n = Aexp + Bexp Lnb Lnb
For W << Lnb

x n = A + B + ( A B ) Lnb
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SDM 2, Michael Shur 1999-2009

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Lecture 8 Boundary conditions


n(0) = nbe nbo
n

n(W ) nbo
A + B = nbe nbo W A + B + ( A B) = nbo Lnb

x E-b c-b Hence

x n = nbe 1 nbo W
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Forward Active Mode Emitter and Base Currents

( nbe = nboexpVbe Vth )>> nbo nbc =nboexpVbc Vth)<< nbo (


n b nbe (1 x W )
V be qSWnbo Qb qS [nb (x ) nbo ]dx exp V th 2 0
W

Excess minority carrier charge in the base:

Emitter current (Ie >> Ib):

nb SqD nbo Vbe n Ie Ic SqD exp n x x=0 W Vth

Base current (from injection into emitter short n+ emitter):

SqDp peo Vbe pe Ib SqDp exp x x=0 Xe Vth


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Generalized KCL law for BJT


Ic

Ib Ie + Ic + Ib = 0

Ie

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Hole distributions in the base of p-n-p BJT for active forward mode, saturation, cutoff, and reverse active mode
Emitter Base Emitter Collector Base

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Collector

Distance

Distance

Emitter

Base

Emitter Collector

Base

Collector

Distance

Distance

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More details
emitter base collector

Vbe(+)
nbe
pcb

nbe peb

peb nbc pco nbo nbo pco peo peo pcb nbc Forward active mode Saturation mode V (+) bc
pcb pco

peo

nbo
Cutoff mode

peo

nbc nbo

pco

Inverse active mode


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Emitter and collector currents

Vbe SqDn nbo Ie Ic In Ine = exp W Vth

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Example
Relate the emitter current to the total concentration of acceptors, nG, in the base (called the Gummel number).

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Solution
Substituting

ni2 nbo = Nab

into

Vbe SqDn nbo Ie Ic In Ine = exp W Vth


we obtain

2 SqDnni Vb e Ie exp nG Vth


since nG = NabW.
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I-V Characteristics (transistor NPN BCW82)

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First SiC BJT Inverter

Photo courtesy of Rick Griffiths


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MOSFET/BJT Fabrication

From: http://jas.eng.buffalo.edu/education/fab/BjtFet/index.html SDM 2, Michael Shur 1999-2009 34

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