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BJT-TO92
The first transistors were Bipolar Why is that RAMs nowadays unipolar?
From http://nina.ecse.rpi.edu/shur/Alphab.htm
SDM 2, Michael Shur 1999-2009
shurm@rpi.edu
History of Semiconductors
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1821: Thomas Seebeck discovered semiconductor properties of PbS 1833: Michael Faraday reported on conductivity temperature dependence of semiconductors 1875: Werner von Siemens invented a selenium photometer 1878: Alexander Graham Bell used this device for a wireless communication system 1907 Round demonstrated the first LED (using SiC) 1947: Bardeen, Brattain, and Shockley discovered a Bipolar Junction transistor
Seebeck
von Siemens
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Introduction
First transistor in practical use (invented in 1947, used in 1950 - 1960s) Largely replaced by CMOS but still a very important device (especially in high-speed and high power applications) Heterojunction bipolar transistor - high performance devices (including Si-Ge HBTs)
SDM 2, Michael Shur 1999-2009
shurm@rpi.edu
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Bipolar Advantages
Vertical Current flow - high speed for large areas High current drive capability because of the large area High transconductance (exponential dependence of current on voltage) High breakdown voltage possible Fixed threshold voltage Low 1/f noise
SDM 2, Michael Shur 1999-2009
shurm@rpi.edu
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Outline
BJT Basics
Principle of operation Operation regimes Circuit configurations IV characteristics
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BJT Basics
emitter base collector
p-n-p
Two back-to-back p-n junctions sharing a common base region
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BJT structure
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Output current
+
Input Voltage
+
Output voltage
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Equivalent circuit
emitter
collector base
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emitter
collector
emitter p n
collector p
+
base Electron diffusion length
+
base Hole diffusion length
10
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n+ collector plug
From T. A. Fjeldly, T. Ytterdal, M. S. Shur, Introduction to Device Modeling and Circuit Simulation, Wiley, New York , 1998
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10 19 10
17
..
10
15
n+ 0 0.8
p 1.6
n 2.4 3.2
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Distance (m)
SDM 2, Michael Shur 1999-2009
shurm@rpi.edu
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qVbe Ec EF Ev
(n)
EF
( p)
qVcb E (n) F
Distance
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Emitter
EFp
Base
Ev
EFn
Collector
SDM 2, Michael Shur 1999-2009
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Principle of Operation
Emitter Ie I ne I rb Ic n+ p n Collector
I pe Ib
SDM 2, Michael Shur 1999-2009
Base
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Carriers are injected into the base from the emitter by forward biasing the E-B junction (normal operation)
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Depletion regions
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Electron concentration in the base at the boundary of the forward biased emitter-base depletion region is given by nbe = nbo exp Vbe / Vth >> nbo where n bo = n ib2/Nab, n ib is the intrinsic carrier concentration in the base region, Nab is the acceptor doping density in the base region, Vth = kBT/q is the thermal voltage, and Vbe is the emitter-base voltage ( Vbe >> Vth ). Hence, inority carriers are supplied (we say injected ) into the base region from the emitter region. Holes are injected into the emitter region, just like electrons are injected into the base. The minority carrier (hole) concentration in the emitter at the boundary of the emitter-base depletion region is given by
peo = n ie 2/Nde , n ie =
n ib is the intrinsic carrier concentration , Nde is the donor doping density in the emitter region. However, since Nde >> Nab the number of holes injected into the emitter region is much smaller than the number of electrons injected into the base: peb << nbe .
SDM 2, Michael Shur 1999-2009
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Injection
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Regimes of operation
Collector-base bias Mode Reverse Forward Forward Reverse Forward active mode Reverse active mode Saturation mode Cutoff mode
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d nb nb nbo Dn =0 2 nl dx
x x n = Aexp + Bexp Lnb Lnb
For W << Lnb
x n = A + B + ( A B ) Lnb
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n(W ) nbo
A + B = nbe nbo W A + B + ( A B) = nbo Lnb
x n = nbe 1 nbo W
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Ib Ie + Ic + Ib = 0
Ie
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Hole distributions in the base of p-n-p BJT for active forward mode, saturation, cutoff, and reverse active mode
Emitter Base Emitter Collector Base
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Collector
Distance
Distance
Emitter
Base
Emitter Collector
Base
Collector
Distance
Distance
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More details
emitter base collector
Vbe(+)
nbe
pcb
nbe peb
peb nbc pco nbo nbo pco peo peo pcb nbc Forward active mode Saturation mode V (+) bc
pcb pco
peo
nbo
Cutoff mode
peo
nbc nbo
pco
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Example
Relate the emitter current to the total concentration of acceptors, nG, in the base (called the Gummel number).
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Solution
Substituting
into
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MOSFET/BJT Fabrication