Beruflich Dokumente
Kultur Dokumente
s s s
s s
s s
HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s WELDING EQUIPMENT
s
ISOTOP
C C
September 2003
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THERMAL DATA
R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.55 1.2 0.05
o o o
V CEO(SUS) * Collector-Emitter Sustaining Voltage (I B = 0) h FE V CE(sat) DC Current Gain Collector-Emitter Saturation Voltage
300 1.25 1.4 1.5 1.8 2.4 2.5 430 3 6 1.8 2.2 3 V V V V V V A/s V
Base-Emitter Saturation Voltage Rate of Rise of On-state Collector Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage Without Snubber Diode Forward Voltage Reverse Recovery Current
I C = 85 A I C = 85 A
I B = 2.4 A I B = 2.4 A
V CC = 300 V R C = 0 t p = 3 s I B1 = 0.9 A T j = 100 o C V CC = 300 V R C = 5 I B1 = 0.9 A T j = 100 o C V CC = 300 V R C = 5 I B1 = 0.9 A T j = 100 o C I C = 60 A V BB = -5 V V clamp = 300 V L = 0.04 mH I CWoff = 100 A V BB = -5 V L = 25 H T j = 125 o C I F = 85 A V CC = 50 V R BB = 0.6 I B1 = 0.6 A T j = 100 o C I B1 = 2.4 A V CC = 50 V R BB = 0.6
2.2
s s s V
VF I RM
T j = 100 o C
1.2 18
1.55 25
V A
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % # See test circuits in databook introduction To evaluate the conduction losses of the diode use the following equations: P = 1.1 IF(AV) + 0.0045 I2F(RMS) VF =1.1 + 0.0045 IF
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Safe Operating Areas Thermal Impedance
Derating Curve
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Reverse Biased SOA Foward Biased SOA
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Dc Current Gain Typical VF Versus IF
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Turn-on Switching Test Circuit Turn-off Switching Waveforms
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P093A
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