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So that k =
4
(5)
The dielectric constant is a characteristic property of a given dielectric material which varies not only from
one substance to another but also with the physical state of substances [25], was also calculated. In general the
dielectric constant is a complex quantity that is related to complex refractive index through the equation
= 1 + i2 = (n + ik)
2
(6)
Where 1 and 2 are the real and imaginary parts, respectively. Therefore, expanding (6) and collecting like
terms together gives
1 = n
2
k
2
and 2 = 2nk (7)
Where the real part, 1 relates to the refractive surface properties (Fresnel reflection coefficients) and the
imaginary part, 2 gives the radio absorption coefficient [26].
The optical conductivity, o (the frequency response of a material when irradiated by light) of the films was
also calculated using the relation
o
o
=
unc
4n
(8)
Where c is the speed of light in vacuum.
The optical band gap Eg was determined by analysing the optical data with the expression for the optical
absorbance and the photon energy h [11] using the relation
=
k(h-E
g
)
n2
h
(9)
Where k is a constant and n is equal to one for a direct-gap material, and four for an indirect-gap material.
3. RESULTS AND DISCUSSION
3.1. Film Thickness
The gravimetric method involves the use of mass of deposited CdS, density of bulk CdS material and
volume to calculated film thickness. Recall
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INTERNATIONAL JOURNAL Of ACADEMIC RESEARCH Vol. 3. No. 6. November, 2011, II Part
Density, D =
Mass, M
Volume, V
(10)
But Volume, V = tA. Where t = film thickness and A = Area of the deposited thin film given by length x width
i.e. A = L x W. Density, D is the density of bulk CdS.
Thus,
t =
M
A
(11)
For samples C15 and C23, the area of deposition was found to be A15 = 12.6546 cm
2
and A23 = 11.0166 cm
2
respectively. Also the mass of the deposited films was M15 = 0.0036g and M23 = 0.0073g respectively. The bulk
density of CdS is 4.82 g/cm
3
.
Therefore, t15 =
0.0036
4.82 12.6546
=59.02m.
t23 =
0.0073
4.82 11.0166
=137.59m.
Since there was deposition on both sides of the glass substrate, the considered thickness assuming uniform
deposition on both sides of the substrate becomes t/2 so that t15 = 29.51m and t23 = 68.80 m.
3.2. Optical Studies
The optical absorption spectra of the CdS thin films deposited at different deposition condition as depicted
on samples C15 and C23 are shown in Figure 1.
The film C15 has a low absorbance and C23 has a higher absorbance. This may be attributed to the higher
thickness of C23. It can be observed that in general, both films have decreasing absorbance from 2 = 324nm to
2=990nm.
The transmittance spectrum shown in Figure 2(a) indicates that the films have poor transparency in the
Ultraviolet (UV), good transmittance (45% - 85%) in the Visible and high transmittance (85% - 94%) in the Near-
Infrared (NIR) regions of the electromagnetic spectrum thus can be used as UV filter. Also the higher the thickness
of the film the lower the transparency as observed in Figure 2(b).
Fig. 2(a). Transmittance spectrum for thin film sample C15 Fig. 2(b). Transmittance spectrum for thin film sample C23
Fig. 1(a). Absorbance spectrum for thin film sample C15 Fig. 1(b). Absorbance spectrum for thin film sample C23
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The film has a low reflectance of 20% in the UV region to 3% in the NIR region as reported in Figure 3. C23
gave almost the same reflectance as C15 in the Visible to NIR region. This property makes CdS useful in the area
of solar control coating.
The absorption coefficient , of the thin films, as illustrated in Figure 4, has a steep onset at about 500nm
for both films. It can be observed that the value of for C23 is higher than of C15 at onset but lower at shorter
wavelength region (<450nm).
The refractive index of film C15 rises in the UV region and then falls as the wavelength increases in the
Visible region as shown in Figure 5(a). However for C23, the refractive index was completely imaginary in the UV
region, then rises sharply to 2.64 in the Visible region before dropping gradually to 1.87 at 2 = 1000nm. This feature
makes the film a useful material in solar control coating applications.
Fig. 5(a). Refractive Index of thin film sample C15 Fig. 5(b). Refractive Index of thin film sample C23
Fig. 4(a). Absorption coefficient of thin film sample C15 Fig. 4(b). Absorption coefficient of thin film sample C23
Fig. 3(a). Reflectance spectrum for thin film sample C15 Fig. 3(b). Reflectance spectrum for thin film sample C23
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INTERNATIONAL JOURNAL Of ACADEMIC RESEARCH Vol. 3. No. 6. November, 2011, II Part
The complex dielectric constant is described by Figures 7 and 8 respectively. From Figure 7(a) the real
dielectric constant rises from 5.98 at 350nm to the maximum value of 6.98 at 400nm (i.e. in the UV region) and
then decreases as the wavelength increases in the Visible region to 3.24 at 700nm. This is as a result of long
deposition time, which modifies the dielectric features of mainly dielectric thin films [27].
Fig. 9(a). Optical conductivity of thin film sample C15 Fig. 9(b). Optical Conductivity of thin film sample C23
Fig. 8(a). Imaginary Dielectric Constant of thin film sample
C15
Fig. 8(b). Imaginary Dielectric Constant of thin film
sample C23
Fig. 7(a). Real Dielectric Constant of thin film sample C15 Fig. 7(b). Real Dielectric Constant of thin film sample C23
Fig. 6(a). Extinction coefficient of thin film sample C15 Fig. 6(b). Extinction Coefficient of thin film sample C23
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Figure 9(a) shows the decrease of optical conductivity from the peak value of 2.54x10
12
-1
m
-1
at 324nm to
6.73x10
11
-1
m
-1
at 500nm and then to 7.19x10
10
-1
m
-1
at 992nm. This behaviour is caused by the dependency of
optical conductivity on the nature of refractive index and absorption coefficient because at the UV region, and n
are greatest and diminishes as the wavelength increases.
As shown in Figure 10(a), the plot of (h)
2
versus photon energy h for film C15 was analysed using
equation (9). Extrapolation of the linear portion of the plot to the (h)
2
= 0 energy axis yielded the direct band gap
value of 2.45eV, which is in close agreement with reported value by Ashour [11] and the bulk CdS band gap of
2.42eV [28]. Also, similar analysis for thin film C23 yielded a direct band gap of 2.44eV as reported in Figure 10(b).
4. CONCLUSION
CdS thin films were successfully deposited by modified CBD technique using cadmium chloride and
Thiourea. The films were deposited onto substrates at different deposition conditions determined by concentration
of reagents. It was noticed that film thickness increased with relative reduction of Thiourea concentration. The CdS
thin films have high transmittance of about 85% to 94% in the UV-Vis-NIR regions; hence they could be used as
thermal control window coatings for cold weather and antireflection coatings. The investigated films exhibited a
direct transition of 2.44eV and 2.45eV thus, are well-suited for solar cell applications. The results obtained suggest
further investigation of the method employed.
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