AO4828

60V Dual N-Channel MOSFET

General Description
The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

Features
VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56m (VGS = 10V) RDS(ON) < 77m (VGS = 4.5V) 100% UIS tested 100% Rg tested

SOIC-8 Top View Bottom View Top View S2 G2 S1 G1 D2 D2 D1 D1

D 1

D 2

G1 S1

G2 S2

Pin1

Absolute Maximum Ratings TA=25 unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current B TA=25 C Power Dissipation Avalanche Current B Repetitive avalanche energy 0.1mH
B

Maximum 60 20 4.5 3.6 20 2 1.28 19 18 -55 to 150

Units V V A

VGS C TA=25 TA=70 C ID IDM C TA=70 PD IAR, IAS EAR, EAS TJ, TSTG

W A mJ C

Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 48 74 35

Max 62.5 110 60

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

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AO4828

Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=250A, VGS=0V VDS=60V, VGS=0V C TJ=55 VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=4.5A RDS(ON) gFS VSD IS ISM Static Drain-Source On-Resistance VGS=4.5V, ID=3A Forward Transconductance Diode Forward Voltage Pulsed Body Diode Current B 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.3 60 25 1.65 8.5 VGS=10V, VDS=30V, ID=4.5A 4.3 1.6 2.2 4.7 VGS=10V, VDS=30V, RL=6.7, RGEN=3 IF=4.5A, dI/dt=100A/s 2.3 15.7 1.9 27.5 32 35 2 10.5 5.5 VDS=5V, ID=4.5A IS=1A,VGS=0V C TJ=125 1 20 46 80 64 11 0.74 1 3 20 540 56 100 77 2.1 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 The value in any given application depends on the user's specific board design. C. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 The C. SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev8: May 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

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AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10.0 V 15 10 ID (A) 4.5V 10 4.0V 5 25C VGS=3.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance VGS=10V 1.8 ID=4.5A 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=3.0A ID(A) 125C 5.0V 15 VDS=5V

100 90 80 RDS(ON) (m ) 70 60 50 40 30 20 VGS=10V VGS=4.5V

160 140 120 100 80 25C 60 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C IS (A) ID=4.5A

1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C

Alpha & Omega Semiconductor, Ltd.

RDS(ON) (m )

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AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID= 4.5A Capacitance (pF) 600 Ciss 400 Coss Crss 0 0 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 800

200

100.0 RDS(ON) limited 100s 10.0 ID (Amps) 10ms 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 1ms

40 10s Power (W) TJ(Max)=150C TA=25C 30

20

10

0 0.001

0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

0.01

10 Z JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton Single Pulse

0.01 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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