MPD 04.2012

23rd
N se io cA ct w se Ho L iA e s ec R sp AtU R te Li
ANNIVERSARY
RF TO LIGHT
APRIL 2012
Gallium Nitride MMIC Power Amplier Class A RF Amplier Model 5227 is a Class A RF amplier covering 80 to 1000 MHz with 500W minimum output power. This is an ideal choice for test and measurement systems needing high power in the smallest commercially available package possible (just 5U tall). It comes standard with a front panel controller allowing gain adjustment, forward and reected power monitoring, and an internal Automatic Leveling Control. In addition, this RF amplier utilizes IEEE-488, RS-232 and Ethernet connectivity for full remote operation. WWW.MPDIGEST.COM 1 OPHIR RF The AM006041SD-2H is an ultra-broadband GaN MMIC power amplier with 21 dB gain and >42 dBm output power over the 0.03 to 6 GHz band. It is a dropin carrier to be screwed to a metal heat sink and is RoHS compliant. The unit is 50 ohm matched at input and output, with a typical return loss of 17 dB at input and 6 dB at output. Applications include software radio, instrumentation and ECM. WWW.MPDIGEST.COM 2 AMCOM
in this issue
in my opinion: Keeping the Right perspective on timing by Fox electronics theory and Application of RF/microwave Absorbers by emerson & cuming microwave products 3
precision connectors for .047 semi-Rigid cable A new line of precision connectors designed for .047 semi-rigid cable has both 1.85 and 2.92mm Male and Female connectors available, and was designed for low VSWR and insertion loss. The 1.85mm series performs to 65 GHz and the 2.92mm series performs to 46.5 GHz. Both designs incorporate fully captivated center contacts with rear sockets that accept a pointed cable center conductor, eliminating the need for center contact soldering. WWW.MPDIGEST.COM 3 PRECISION CONNECTOR, INC. (PCI)
Hittites New pLL chipset solution delivers Ultimate spurious and phase Noise performance 14 by Hittite microwave Just Under the Radar by Bob pinato
in the News Literature showcase
18
42 44
Volume 57, issue 4 www.mpdigest.com
GVA -81 +
GVA GVA -83+ -63 +
10 d B
GVA GVA -82+ -62 +
20 d B
GVA -84 +
15 d B
24 d B
+20 dBm Power Amplifiers with a choice of gain
w 2 Ne ls! e Mod
The GVA-62+ and -63+ add ultra-flat gain to our GVA lineup, as low as 0.7 dB across the entire 100 MHz-6 GHz band! All of our GVA models are extremely broadband, with a wide dynamic range and the right gain to fit your application. Based on high-performance InGaP HBT technology, these patented amplifiers cover DC* to 7 GHz, with a gain selection of 10, 15, 20 or 24 dB (at 1 GHz). They all provide better than +20 dBm typical output power, with typical IP3
US patent 6,943,629
DC to 7 GHz
*
PLIFIERS
$ from
*Low frequency cut-off determined by coupling cap,
except for GVA-62+ and GVA-63+ low cutoff at 10 MHz.
performance as high as +41 dBm at 1 GHz. Supplied in RoHS-compliant, SOT-89 housings, low-cost GVA amplifiers feature excellent input/output return loss and high reverse isolation. With built-in ESD protection, GVA amplifiers are unconditionally stable and designed for a single 5V supply. Just go to minicircuits.com for technical specifications, performance data, export info, pricing, and everything you need to choose your GVA today! Mini-Circuitswere redefining what VALUE is all about!
159
ea. (qty.1000 )
WWW.MPDIGEST.COM 200
ISO 9001 ISO 14001 AS 9100
U.S. Patents 7739260, 7761442
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine finds the model you need, Instantly For detailed performance specs & shopping online see
IF/RF MICROWAVE COMPONENTS
458 rev H
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PERSPECTIVES
FROM THE EDITOR
thumbs-up to proceed, and the decision was (extremely belatedly) trashed by everyone from DOD, the FAA, commercial GPS users, and most raucously, the GPS industry, citing irreparable harm to GPS services. The situation quickly turned ugly as LightSquared slammed the GPS industry, which fought back claiming everything from political chicanery to outright fraud. So now the FCC and the current administration are faced with somehow managing to extricate themselves blamelessly from the situation, presumably without killing LightSquared outright.
APRIL 2012 PAGE 3
The Lessons of LightSquared

This seems unlikely. The bottom line is that there is an interference problem that anyone with a General Class amateur radio license would quickly realize, and LightSquareds investment, at least in part, should be salvaged so the company can do something with its spectrum, huge communications spacecraft, and other assets. But the primary lesson from this mess is that politicians have no business sticking their noses into technical issues they know nothing about. Dont hold your breath.
editorial statement of purpose

microwave product digest serves RF and microwave design engineers, research and development engineers, applications engineers and engineering managers. these professionals, working in facilities that serve both the commercial and government markets, are involved with the design, development, application, and use of systems and subsystems, devices, and techniques involving frequencies from RF to light.
Karen Hoppe Editor, MPD he saga of LightSquared is definitely the wireless debacle of 2011, now continuing in diminished fashion in 2012. Long story short, the FCC gave LightSquared a hearty
editor Karen Hoppe editor@mpdigest.com contributing editor Barry manz manzcom@gmail.com senior production editor erin Almaleh eperry@mpdigest.com copy editor sue goldenberg circulation manager claire Ferrante subscription@mpdigest.com director of marketing Rosalind markhouse rmarkhouse@mpdigest.com publishing coordinator eileen Rocco eerrocco@mpdigest.com website coordinator chris montero chris@inrworx.net publisher doug markhouse douglasmeow@mpdigest.com
Keeping the Right Perspective on Timing

iscussions about technology have the power to clarify or the power to confuse, depending on the perspective they take. And when you overlay business desires for smaller, more powerful, more economical, and more energy-efficient components, it becomes even easier to overlook the underlying physics behind technology options. It seems that we are experiencing a bit of that confusion in the timing device market right now, based on selective comparisons between oscillators using quartz as a reference source and MEMS (micro-electro-mechanical systems) technologies using silicon. There is no doubt that the concept of siliconreference MEMS technology is attractive to electronic designers who would love to integrate their total timing solution into a compact, low-power, commercially viable, monolithic solution. But in all the excitement about the current iterations of silicon-MEMS timing technology, we have lost sight of the real performance and business advantages that configurable quartz oscillators are delivering in demanding applications. To be sure, both materials quartz and silicon have their own unique properties in terms of physical performance as well as production convenience or economy. But the high Q-factor of quartz (defined as the resonance frequency divided by the resonance width) continues to offer excellent stability as a reference source the initial influence on the quality output of an associated timing device. Granted, Q-factor is just the starting point, and only part of the total equation. How specific quartz-based or silicon-based devices are designed and manufactured also play an impor-
IN MY OPINION
Harvey Kaylie, mini-circuits Jerry d. Neal, RFmd Robert pinato, iccs
editorial council
mark Kiiss, miteQ Joe diesso, AR RF/microwave instrumentation Robert Badami, Herley-cti Jim price, Lorch microwave Arthur Nixon, insulated wire
octAgoN commUNicAtioNs, iNc. president douglas markhouse secretary/treasurer Rosalind markhouse controller eileen Rocco
This publication is issued without charge, upon written request, to qualified persons. Periodical Postage paid at Yonkers, NY and additional mailing offices.
publishers council
POSTMASTER: Send address changes to Microwave Product Digest, P.O. Box 1024, Englewood Cliffs, NJ 07632-9971. Pub. Agree. # 40112540 Return Undeliverable Canadian addresses to: IMEX P.O. Box 4332 Station Road Toronto, ON M5W3J4 Microwave Product Digest (USPS 007889) (ISSN 1061754X) is published 12 times a year by Octagon Communications, Inc., 167 South Broadway, Hastingson-Hudson, NY 10706.
tant role in frequency range, stability, noise, jitter, cost and delivery time of the finished component solution. In that respect, both silicon MEMS devices and configurable quartz oscillaE.L. Fox, Jr. tors use compensating President, electronic circuitry to Fox Electronics refine the output signal of their respective reference devices to the specific needs of the application. But a key factor is that even within products using the same reference source not all timing devices are created equal. Therefore, inferring the performance of all quartz-based devices by the characteristics of one specific design is no more relevant than judging the quality all silicon-MEMS devices by the performance of one implementation. Making broad claims that quartz oscillators have shortcomings in terms of limited frequency, limited pull-range options, inherent production problems, and long lead times ignores proven quartz technology breakthroughs, such as configurable oscillators that deliver clean, accurate timing signals at custom frequencies up to extremely high ranges. Todays high-quality configurable oscillators deliver reliable performance across a full range of target frequencies from 0.750 MHz all the way up to 1.35 GHz. They also offer stabilities as tight as +/-20 ppm, reduce jitter to the range of 0.3 pS to 0.5 pS, satisfy voltage requirements In My Opinion, Cont on pg 44
PAGE 4 APRIL 2012
ON THE MARKET
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mini-circuits
Microwave Precision Fixed Attenuator The YAT-1+ is a microwave precision fixed attenuator with a wide bandwidth of DC to 18 GHz, excellent attenuation accuracy and flatness, and a miniature package (MCLP 2 x 2mm). Applications include cellular, PCS, communications, radar and defense. 4
werlatone
New 3 dB 90 Hybrid Coupler Model QH9141 is a connectorized hybrid coupler covering the 150 to 2000 MHz band. Rated for 150W CW, this unit will tolerate severe port-to-port unbalances while operating with an insertion loss of only 0.85 dB maximum. Operating temperature range is -55 to +85C. 5
rohde & schwarz
New 4 GHz Oscilloscope The R&S RTO1044 4 GHz high-performance oscilloscope with its 20 Gsample/s sampling rate addresses a wide variety of applications. It is ideal for analyzing fast signals and steep edges. The unit can handle different data interfaces up to a data rate of 1.6 Gbps. 6
Multiple bands, multiple radios, one antenna:
broadwave technologies
Resistive Power Divider/Combiner Model 151-270-002 is a 2-way, 50 ohm resistive power divider/combiner that has a DC to 6 GHz operating frequency range, 1.50:1 VSWR, and SMA female connectors. It exhibits 1 dB nominal insertion loss (above theoretical loss), +/-0.5 amplitude tracking, and more. 7
Anatech Electronics makes it easier

Band combiners and dividers from Anatech Electronics are based on our high-performance cavity filters so youre assured of low loss, high isolation, low PIM, and high powerhandling ability: Combine or divide 2 to 6 wireless bands Eliminate the need to use multiple antennas Combine or multiplex GSM, PCS, WiMAX, LTE and other wireless bands outputs One input to multiple-band outputs and vice versa Combine multiple bands with 1 input and 1 output Please call us or send us an email with the frequencies youre trying to combine or split. well do the rest!
Wideband PLLs with Integrated VCOs Two new SMT packaged wideband PLLs with integrated VCOs, the HMC833LP6GE and the HMC834LP6GE, offer industry leading phase noise and spurious performance and are ideal for a wide range of applications including high performance cellular/4GWiMAX infrastructure and more. 9 Low PIM Wireless Band Splitters Model Dx-82Fn, a new range of low cost 2-, 3- and 4-way wideband reactive power splitters, has been designed to a bandwidth of 1700 to 6000 MHz. This includes all the new Wi-Fi, WiMAX and LTE frequencies now being incorporated in indoor distributed antenna systems. 8
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PAGE 6 APRIL 2012
ON THE MARKET
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networks international corp.
LTE Band 12 (Uplink) Ceramic Filter A high performance ceramic filter for cellular and base station applications in the LTE band is now available. This filter operates in LTE band 12 (uplink), offering low insertion loss and high rejection in adjacent bands. Range is 698 to 716 MHz. 10
rlc electronics
Band Reject Filters -- Tunable Band stop and cavity filters that can be readjusted by the customer to new center frequencies are now available. These filters are tunable over a +/-7.5% center frequency range with minimal change in bandwidth. Power rating is 2.0W, impedance is 50 ohms. 11
texas instruments (ti)
New Digital-to-Analog Converter (DAC) Said to be the industrys fastest 16-bit DAC, the quad DAC34SH84 is 50% faster and uses 50% less power than the closest 16-bit DAC alternative, clocking in at 1.5 GSPS and consuming just 362mW per channel. Features include increased bandwidth and frequency agility. 12
aeroflex incorporated
Auto Test & Alignment System In collaboration with Technisonic Industries, Ltd., the company can now provide automated test and alignment capabilities for Type 1 and Type 2 radios on the Aeroflex 3920 Digital Radio Test Set. This procedure provides fully automated test and alignment of Technisonic radios without the need for user interaction. It ensures consistent and reliable tests and alignment to manufacturer-recommended specs and to industry standards, ensuring proper interoperability and a uniform standard of performance within the radios network technology. 13
pmi
CW Immune ERDLVA Model ERDLVA-218-CW-LPD is a CW immune, Extended Range Detector Logarithmic Video Amplifier (ERDLVA) designed for ultra low DC power consumption. It operates over the 2.0 to 18.0 GHz frequency range and can interface with an output cable measuring more than 100. 14
kr electronics
Constant Delay Bandpass Filter Part number 2932 is a constant delay bandpass filter with a minimum 3 dB bandwidth of 100 MHz, a typical 40 dB bandwidth of 400 MHz and a typical 60 dB bandwidth of 520 MHz. Group Delay variation over the passband is <1 nsec (typical <0.5 nsec). 15
PAGE 8 APRIL 2012
WHITE PAPER
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Theory and Application of RF/Microwave Absorbers

by Paul Dixon, Emerson & Cuming Microwave Products
bsorbers in the RF/microwave realm are materials that attenuate the energy in an electromagnetic wave. Absorbers are used in a wide range of applications to eliminate stray or unwanted radiation that could interfere with a systems operation. Absorbers can be used externally to reduce the reflection from or transmission to particular objects and can also be used internally to reduce oscillations caused by cavity resonance. They can also be used to recreate a free space environment by eliminating reflections in an anechoic chamber. Absorbers can take many different physical forms including flexible elastomers or foam or rigid epoxy or plastics. They can be made to withstand weather and temperature extremes. Absorbers have become a critical element in some systems to reduce interference between circuit components. This paper will attempt to cover all aspects of absorbers from basic theory through absorber applications and types plus testing methods. Absorber Theory Absorbers generally consist of a filler material inside a material matrix. The filler consists of one or more constituents that do most of the absorbing. The matrix material is chosen for its physical properties (temperature resistance, weatherability, etc.). Absorbers are characterized by their electric permittivity and magnetic permeability. The permittivity is a measure of the materials effect on the electric field in the electromagnetic wave and the permeability is a measure of the materials effect on the magnetic component of the wave. The permittivity is complex and is generally written as
wave travels through the material. Analogous to the electric permittivity is the magnetic permeability which is written as
With magnetic loss tangent defined as
The permeability is Principle of a quarter wavelength absorber a measure of the materials effect on the magnetic field. Both components contribute to parameters may by anisotropic in which wavelength compression inside the mate- case the single values permittivity and perrial. Additionally, due to the coupled EM meability must be replaced by a 3x3 tensor. wave, loss in either the magnetic or electric field will attenuate the energy in the wave. In most absorbers, both permittivity and permeability are functions of frequency and can vary significantly over even a small frequency range. If the complex permittivity and permeability are known over a Generally the coordinate system can be frequency range then the materials effect rotated to make all but the diagonal comon the wave is completely known. penents equal to zero. The units of permittivity are farads/meter and the permeability units are henrys/meter. Free Space The actual values for most materials can be Free space absorbers come in two broad cumbersome in calculation. For this reason types, reflectivity absorbers and insertion they are usually compared to the permittiv- loss absorbers. Reflectivity absorbers ity and permeability of a vacuum. These reduce the reflection level compared to a values are perfect reflector (metal plate). Insertion loss absorbers reduce the signal travelling from point A to point B. and Reflectivity-Narrowband Any single layer homogeneous material will resonate when its thickness is equal to wavelength. A useful visualization is that the incoming wave will be partially reflected by the front surface of the material while part is transmitted. This transmitted wave then propagates through to the back of the absorber where it undergoes total reflection and propagates back through the front face of the absorber. If the wave reflected off the front face is equal in magnitude and 180 out of phase with the wave reflected off the back face then the waves will cancel and there will be no total reflection. This phenomenon will occur when the transit distance for the wave through the material is 180. Since the wave transits the mateEmerson, Cont on pg 28
The permittivity arises from the dielectric polarization of the material. The quantity is sometimes called the dielectric constant which is something of a misnomer when applied to absorbers as can vary significantly with frequency. The quantity is a measure of the attenuation of the electric field caused by the material. The electric loss tangent of a material is defined as
The values * and * then become dimensionless. Since is dependent on the dielectric polarization which always opposes the electric field, for all materials is greater than that of free space and hence is always greater than 1. Anisotropic Parameters Most absorber filler materials are spherical in shape leading to isotropic electromagnetic parameters I.e. propagation and attenuation in the material is independent of direction. For nonspherical fillers the
The greater the loss tangent of the material, the greater the attenuation as the
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PAGE 12 APRIL 2012
ON THE MARKET
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microsemi corp.
Bench Top Amplifier Model AML1826P3203-BT is an enclosed bench top amplifier for production test or lab applications. It provides 36 dB gain over the 18.0 to 26.5 GHz band at a 1 dB compressed output power of +31.5 dBm. Features include an internal heat sink and cooling fan. 16
sri hermetics, inc.
Hermetic Dual Lobe Single Row Nano Laser weldable hermetic dual lobe single nano connectors are available in aluminum, titanium, stainless steel, and Kovar. These connectors conform to MIL-DTL-32139 and are available in up to 51 contact configurations. 17
mini-circuits
Surface Mount Diplexer TDP-112-75+ is a low- and high-pass combination device. Low-pass port is designed for DC to 65 MHz and high-pass port is designed for 88 to 1100 MHz. It can be used in CATV, set-top box, defense and wireless communications, and other multiband radio systems. 18
IMAgine.
Innovative
rlc electronics
Precision and High Power Terminations Precision Coaxial Terminations provide extremely low VSWR, 50 ohm matched terminations over broad frequency ranges in a wide selection of connectors and power ranges. The Coaxial High Power Terminations provide low VSWR terminations over a full range of RF frequencies. 19
Multifunction
Adaptable
Integrated Microwave Assemblies

PIN Diode Attenuator Model DTA-100M40G-30-CD-1 is a 5-Bit programmable 30 dB PIN diode attenuator with a step resolution of 1.0 dB over the frequency range of 100 MHz to 40 GHz. It operates on a single +15 VDC supply and draws only 40mA of current. Size is 2.0 x 1.8 x 0.5". 20
Time to pack it in.
pmi
Demand for ever-higher performance probably has you wondering how to get more out of your IMAs. The answer? Pack more in! Nardas MMC (Multilayer Microwave Circuitry) Technology offers the most performance in the smallest possible footprints. Traditional approaches cant come close. The principle behind Nardas MMC is simple enough. Narda MMC uses a single multilayered printed circuit board to interconnect microwave devices (MIC, SMT, or MMIC configurations) with bias, control and digital signal
Scan using your Smart Phone or Tablet to learn more!
processing components. Typically, these complex IMAs are constructed with the microwave circuitry on the top side, and the control circuitry, conditioning, microprocessor, FPGAs and DSP circuits on the bottom. The Compact Microwave Subsystem measures just 5.75 x 2.66 x 0.515 inches, holding over 60 microwave components including couplers, switches, filters, limiters, amplifiers and more. Its time to started packing in more performance, with Nardas MMC technology. Contact us today to learn how.
microsemi corp.
Broadband Medium Power Amplifier Model AML0120P3201 is a medium power broadband amplifier operating in the frequency range of 100 MHz to 20.0 GHz. It has a gain of 32 dB min., noise figure of 3.5 (above 500 MHz) and output P1dB of +26 dBm minimum. The unit operates from a single +12 to +15 VDC supply. 21
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High Power Front End Modules and Power Amplifiers

The RFMD RF5605 and RFFM420x are 6 x 6mm high power, front end modules that are intently specified to address IEEE 802.11b/g/n/ac WiFi 2.4-2.5GHz customer premises equipment (CPE) applications. They each have an integrated three-stage linear power amplifier, Tx harmonic
FEATURES Single supply voltage 5.0V 35dB typical gain across frequency band POUT >27dBm at 2.5% EVM 2.4GHz to 2.5GHz frequency range 1 x 1 MIMO architecture Integrated 3-stage PA, filtering, and T/R swtich
filtering, and SPDT switch. These modules also have a fully matched input and output for a 50 system and incorporate matching networks optimized for linear output power and efficiency. With mirrored pinout options, these modules align with any chip set or configuration used for WiFi designs.
Freq Range (Min) (MHz) 2400 2400 2400 2400
Freq Range (Max) (MHz) 2500 2500 2500 2500
POUT (dBm) 27.0 25.0 25.5 27.5
EVM (%) 2.5 2.5 2.5 2.5
Gain (dB) 35.0 33.0 33.0 35.0
VCC (V) 5.0 5.0 5.0 5.0
ICC (mA) 900 420 420 900
Package Laminate Module Laminate Module Laminate Module Laminate Module
Part Number RF5605 RFFM4200 RFFM4201 RFFM4202
Note: Rated power measured at antenna port at front end module
RF5605/RFFM4200
RFFM4201/RFFM4202
RFMD is a trademark of RFMD, LLC. 2012 RFMD.
PAGE 14 APRIL 2012
FEATURE ARTICLE
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Hittites New PLL Chipset Solution Delivers Ultimate Spurious and Phase Noise Performance
Best-in-Class Performance, 48-Bit Delta Sigma Modulator and Advanced Sweeper Function are Ideal for High Precision Applications
by Hittite Microwave wider frequency range. In addition, s broadband networks and they must support increasingly more services expand, there is a complex test capabilities. constant need to transmit To meet the requirements of more data at higher speeds over these demanding applications, legacy copper or fiber infrastrucHittite Microwave has developed ture, or within the existing slice a new advanced, high performance of wireless bandwidth. Significant HMC983LP5E/HMC984LP4E PLL improvements have been made in chipset solution (Figure 1). The digital error correction and data HMC983LP5E is a DC to 7 GHz coding to pack more information Fractional-N Divider and Frequency into fewer transmitted symbols, but Sweeper. The HMC984LP4E is a the result is a shrinking allowable complementary Digital Phasemargin of error. Many mission critiFrequency Detector and Charge cal applications are also reliant on Pump. This solution offers customhigh data transfer rates and require ers industry leading phase noise and highly accurate and stable operation low spurious, ultra fine frequency across all operating conditions. Test control and an advanced feature set, and measurement equipment appliincluding sweeper functions, phase cations can also place high demands control and more. Table 1 summaon synthesizers. Test equipment has rizes the key specifications of this to stay a step ahead of the advancnew PLL chipset. es in communications technology, while providing close to ideal linBest-In-Class Performance earity, noise and jitter performance Figure 1: HMC983LP5E and HMC984LP4E PLL Many applications utilize a fractionto avoid interfering with the perChipset Solution for High Precision Applications al-N PLL with an integrated VCO formance of the device-under-test to provide a cost-effective solution (DUT). Consequently, high expectations are synthesizers are continuously driven to with good performance. The drawback placed on synthesizers, which are at the provide lower noise floor, decreased inte- with this approach is that the VCO ulticore of most commercial and industrial grated jitter and increased spectral purity mately limits the phase noise of the system, communications and test equipment. Such while providing reliable operation over a and an integrated VCO will always exhibit worse phase noise than a well designed high Table 1: Hittites HMC983LP5E/HMC984LP4E PLL Chipset Q stand-alone VCO. For this reason, the Solution Performance highest performance systems typically use stand-alone VCOs and a separate PLL chip. HMC983LP5E/HMC984LP4E Key Feature A further issue arises in a fractional-N DC to 350 MHz Reference Frequency Range PLL; unlike an integer PLL, the VCO and the divider in a fractional PLL are not Phase Detector Max Frequency 125 MHz running at a multiple of the reference fre(fractional mode) quency. As a result, multiple frequencies are DC to 7 GHz Fractional-N Divider Frequency Range circulating in the PLL substrate and bond 48 bits Delta Sigma Fractional Modulator Resolution wires, causing intermodulation distortion. These intermodulation products, sometimes 35 micro-Hz Frequency Step Size, FPD = 100 MHz referred to as integer boundary spurs, have PLL Figure of Merit FOM -230 dBc/Hz to be extremely small or non-existent in a (HiK fractional mode) high performance instrument. The in-band -233 dBc/Hz PLL FOM (HiK integer mode) spurious levels in a typical integrated PLLVCO can be -50 dBc or even worse near the Integer Boundary Spurs @ 2.1 GHz, -70 dBc typ FPD = 50 MHz integer boundaries. By separating the fractional divider -75 dBc typ 1/2 Integer Boundary Spurs, FPD = 50 MHz from the phase detector in the PLL, the -85 dBc typ 1/3 Integer Boundary Spurs, FPD = 50 MHz HMC983LP5E/HMC984LP4E PLL chipset solution improves the in-band spurious 5 x 5 mm SMT intermodulation significantly, to a value (HMC983LP5E) Package between -65 dBc and -80 dBc. Typical PLL 4 x 4 mm SMT (HMC984LP4E) Hittite, Cont on pg 52
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(3) better placement accuracy and consistency, and (4) high-visibility markings for quicker visual identification and inspection. More models, to meet more needs Mini-Circuits has over 200 different SMT models in stock. So for RF or microwave baluns and transformers, with or without center taps or DC isolation, you can probably find what you need at minicircuits.com. Enter your requirements, and Yoni2, our patented search engine, can identify a match in seconds. And new custom designs are just a phone call away, with surprisingly quick turnaround times gained from over 40 years of manufacturing and design experience!
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ISO 9001 ISO 14001 AS 9100
U.S. Patents 7739260, 7761442
377 rev Y
SPLITTERS 90
5 MHz to 8 GHz
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PAGE 18 APRIL 2012
PERSPECTIVES
www.mpdigest.com
Just Under the Radar

by Bob Pinato, MPD Editorial Advisor
here but from the innovation masters of advanced semiconductor technology would we find such diverse uses for new, exciting and advanced GaN devices? GaN, a semiconductor platform that was developed over many years through DARPA funding by many small and large commercial and defense industry technology firms. We are finding that GaN, only a few years ago relegated to the ones who could afford the premiums which the exotic small wafer technology demanded, is finding its way into other moderate volume commercial and government projects. Once thought of, and by many still is, as a replacement for high power amplifiers in base stations due to its higher efficiencies and optimal operation for the new 4G, LTE, WiMAX (and beyond) frequency bands, GaN is now being identified with new products and market parameters due more to its broadband and efficiency characteristics than its cost advantages. As evidenced at U.S. and international mobile communications, CATV, RADAR, technology and defense conferences, GaN is getting a lot of welldeserved attention from the designer and end user communities. GaN is more efficient, very green messages here, has wider bandwidth and can attain higher
frequencies with high power outputs than most of its contemporaries in GaAs and Silicon. This quarter, there are numerous shows, conferences and symposia across the industry in many countries around the world that are all going to have elements of GaN being proposed for the systems key to their industries. There is the CATV show in China; CCBN, a defense RADAR and aerospace show in Bangalore; CommunicAsia in Singapore; and MTT and CTIA in the USA. Each in a different and very specific segment of the industry; each has its own unique characteristics, frequency and technology requirements. Something which GaN, in each segment, can support the system requirements, at a price point key to each industry. Take, for example, CCBN in Beijing, the biggest CATV conference in Asia, servicing the largest new CATV market in the world. With China committing tens of billions to communications infrastructure to build out the network in tier 2 & 3 cities in the current new five year plan, companies are falling over each other to be participants in the planning, design and execution of a new from the ground up system. A system that is capable of supporting the tripleplay over their bi-directional
broadband networks. U.S. powerhouses such as Motorola, Cisco, Arris (C-Cor), among others, who are touting their new green power amplifiers, line amps, power doublers and sub-systems, are working to gain recognition for their new greener approaches in an industry driven by price, quality, uptime and a system design which goes back almost 40 years. Also, at the same time, both designing into new systems with other international firms (who act as the main contractors and brokers), SARFTA (China Broadcasters forum, akin to the FCC), and competing with the local firms, while at the same time working with those who have secured some of the in-country state and prefecture contracts to develop the systems. In the middle of all this newness and excitement defining the network architecture and requirements is a technology known as GaN (Gallium Nitride). GaN is quickly becoming a major focus due to its greener footprint, as it allows for designs which can use fewer amplifiers in the network, but again at a price. It becomes a device versus systems cost tradeoff, something which puts the primarily American driven technology (Europe and Japan have GaN also) in a very solid position when competing
Pinato, Cont on pg 30
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Low High Tuning 10 kHz Power Supply Freq. Freq. Voltage PN Output Voltage VCO Part No. (MHz) (MHz) (Vdc) (dBc/Hz) (dBm,typ.) (Vdc) CRO0410A-LF 390 CRO1000A-LF 1000 CRO1507A-LF 1504 CRO1940A-LF 1910 CRO2275A-LF 2250 CRO2343A-LF 2310 CRO2477A-LF 2440 CRO2537A-LF 2530 CRO2885A-LF 2880 CRO3069A-LF 3064 CRO3200A-LF 3200 CRO3662A-LF 3657 CRO3850B-LF 3850 430 1000 1511 1970 2300 2376 2540 2545 2890 3074 3200 3667 3850 0.5-4.5 0-3.3 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 0.5-4.5 -117 -121 -117 -112 -113 -109 -108 -115 -115 -116 -116 -113 -109 -4 3 2.5 3.5 1.5 0 3.5 3 7 2.5 11 1.5 2.75 5 5 5 5 5 5 5 5 5 5 5 5 5
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PAGE 20 APRIL 2012
ON THE MARKET
www.mpdigest.com
rlc electronics
Coaxial to Waveguide Adapters Now available in a variety of configurations, these coaxial to waveguide adapters come in Option A (broadband) and Option B (customer band). Connector types are N, SMA, K, male or female. Average power: N, 300W; SMA, 60W; K, 25W. 22
pmi
Digitally Controlled Phase Shifter Model PS-360-2D4G3D5G-10-CD-SFF is a 2.4 to 2.5 GHz, 10-Bit digitally controlled phase shifter that offers up to 360 of phase shift range. This model has a LSB of 0.36 and a low insertion loss of 4 dB typically. It provides fast switching speeds of 300nsec typically. 23
telonic berkeley inc.
Programmable Tunable Filter Bank Model TCS6-3000-5-5G is a programmable tunable filter bank with power handling up to 75W CW. Available frequency range is from 5 to 5000 MHz. There are varieties of manually and programmable tunable band pass filters available as well. 24
kr electronics
Bandpass Filter Part number 2965-SMA is a 500 MHz bandpass filter with a typical 1 dB bandwidth of 8 MHz, insertion loss of 6.5 dB and typical 40 dB bandwidth of 52 MHz. It is supplied in a 0.6 x 0.6 x 2.25" SMA package and can be customized for other center frequencies and bandwidths. 25
Linear Voltage Regulators for Demanding Low Phase Noise Ka-Band Solutions!
Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation
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Ultra Low Noise: 3nV/Hz at 10 kHz, 7 nV/Hz at 1 kHz High Power Supply Rejection Ratio (PSRR): 80 dB at 1 kHz, 60 dB at 1 MHz Four Adjustable Voltage Outputs: VR1: 100 mA at 1.8V to 5.2V VR2 & VR3: 50 mA at 1.8V to 5.2V VR4: 300 mA at 1.8V to 5.2V
<1A Power Down Current
highland technology
Typical Output Noise Density at Each Output
10
-6
VME Analog Input Module The V230 64-channel VME analog input module provides high channel-count data acquisition for dense monitoring applications. Data is presented in realtime as a simple array of 64 values with no handshakes, interrupts, or driver calls required. Ideal for industrial and aerospace. 26
VR1, VR2, VR3 & VR4 Power Supply Rejection Ratio

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-50 -60 -70 -80 -90 -100 VR4 300 mA Load Current VR1 100 mA Load Current VR2 & VR3 50 mA Load Current 10
2
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-8
10
-9
10
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2
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Part Number HMC976LP3E HMC860LP3E HMC1060LP3E
Ideal for Powering Hittites Low Noise Wideband PLLs with Integrated VCOs & PLL Chipset.
mini-circuits
High Gain, High IP3 Wideband Amplifier The ZX60-V63+ uses the companys HBT technology to offer high gain over a broad frequency range (0.05 to 6 GHz) and high IP3. Housed in a rugged, costeffective unibody chassis, this amplifier supports a wide variety of applications requiring moderate power output, low distortion and 50 ohm matched input/ output ports. 27
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Bigger screen. Faster rise/fall time. Twice the sampling rate.
Boonton 4500B Agilent 8990B
Peak power analyzers just got a whole new look.

Radar and wireless communications are increasingly complex, demanding higher performances than ever. The new Agilent peak power analyzer features 15 pulse characterization measurements, including automated pulse droop and delay measurements. Plus a vivid 15-inch touch-screen display to reveal even elusive signal trace details.
Agilent 8990B Rise/fall time* Sampling rate Dynamic range* Internal zero and calibration USB sensor support 5 ns 100 MSa/s -35 to +20 dBm Yes Yes Boonton 4500B** 7 ns 50 MSa/s -50 to +20 dBm No No
Thats thinking ahead. Thats Agilent.
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PAGE 22 APRIL 2012
MILITARY MARKET
www.mpdigest.com
aethercomm
High Power, High Efficiency GaN RF Module Model SSPA 0.125-0.500-125 is a high power, RF amplifier module that operates from 125 to 500 MHz and is packaged in a rugged and robust enclosure. The bandwidth of this module can be extended to 50 MHz on the low side and several hundred MHz on the high side. This PA is employed in systems that require high levels of RF energy with high power added efficiency. Typical output power is 125W across the band at the 3 dB compression point. Nominal input power is 0 dBm but any input power range can be amplified as the system offers a very large dynamic range. Input VSWR is 2.0:1 maximum. This amplifier is equipped with a noise quieting function that reduces the Tx noise power by 60 dB in less than 2.5 uSec. Typical system efficiency is 50 to 60% at P3dB. Standard features include reverse polarity protection, output short and open circuit protection, and over/ under voltage protection. It is packaged in a modular housing that is approximately 4.00 x 7.25 x 1.50". 28
noisewave
Rugged Noise Generator The NW-ATE series, an economical and rugged programmable noise generator, now covering from 10 MHz up to 40 GHz, is ideal for military and SATCOM applications including Ka-band tests such as BER vs. Eb/No, interference, and jamming. The instrument is fully programmable from the front panel and remotely via GPIB and Ethernet. Output level is controlled by an internal broadband variable attenuator in 1 dB steps. Many other options are available including finer attenuation resolution, an internal signal combiner and custom frequency ranges. 30
aeroflex incorporated
Mode 5 Test Set Receives Full DoD AIMS Certification The APM-424(V)5 IFF MK XIIA Mode 5 portable test set has received full certification from the U.S. Department of Defense (DoD) AIMS International Program Office to support both AIMS 04900A Option A (KIV-78) and Option B (KIV-77) crypto appliqus. With the latest AIMS certification, the Mode 5 test set has resolved all previous exceptions, including support for burst mode interrogators, and is in full compliance with DoD AIMS 03-1000A performance standards for Mark XIIA performance and ICAO Annex 10 international standards for Model S ELS/EHS performance for ramp testing of IFF transponders and interrogators. 32
networks international corp.
C-Band Integrated Filter/LNA This new ruggedized C-band filter/LNA was designed for use in eliminating interference caused by navigational communications (radar) of commercial and military aircraft, as well as coastal and marine vessels operating above and below the C-band. It offers 23 dB gain and a low noise figure of 1.1 dB in a hermetically sealed package. 29
GaAs pHEMT Digital Phase Shifters Immediate availability and full design support capabilities for two newly-released additions to the family of GaAs pHEMT digital phase shifters from M/ACOM Technology Solutions have been announced. The MAPS-010146 and MAPS-010166 are, respectively, 4- and 6-bit packaged devices that maintain low phase error and minimal attenuation variation over the full 360 and 8 to 12 GHz frequency range. Both new devices feature a built-in CMOS driver in a 4mm, 24-lead PQFN surface mount package that allows for serial or parallel control and low power consumption, and both devices operate using positive and negative voltage supply. The devices are targeted for communication antennas and phased array radar applications, making them excellent candidates for commercial weather radar applications and military ground-based distancemeasuring radar applications. 31
trilithic
TLC Highpass Filter Series Model number TH500/3000K4 from the companys TLC highpass filter series features low cost COTS design, high rejection (70 dBa min. @ 250 MHz), low profile, compact design, and connectorized package. Applications include military communications, sub-harmonic rejections, unmanned vehicle applications (UVA), and homeland security. Specifications include 3 dB cutoff (500 MHz max.), impedance of 50 ohms, insertion loss of 1.0 dB max. @ 550 MHz, and VSWR of 2.0:1 max. from 550 to 3000 MHz. Rejection is 40 dBa max. @ 325 MHx, 70 dBa max. @ 250 MHz. Input power is 1W. Connectors are SMA Female. Temperature range is 0 to +50C. Package dimensions are 1.00 x 0.50 x 0.40", less connectors. 33
Highest Level of Certification Awarded to MLP Power Inductors The highest level certification has been achieved on three surface mount power inductor series. The three MLP series have been added to the militarys Defense Logistics Agency (DLA) Land and Maritime Qualified Products List (QPL) for MIL-PRF-27 Level T. This is the highest quality level attainable per the Department of Defense (DoD) military specification MIL-PRF-27 for components used in high-reliability critical military applications. The MLP5025-T series is qualified to MIL-PRF-27/367A, while the MLP1812-T series meets MILPRF-27/368A and the MLP8527-T series meets MIL-PRF-27/370A. By achieving Level T certification on these wirewound molded power inductors, the company is responding to a need conveyed by organizations in the military market for a high-reliability, QPL-approved inductor supplier for this mil spec. These MLP series are designed for power applications in military, space, aerospace and defense communities. This includes use in communication, guidance, and security applications, as well as in radar, test & evaluation, and special mission applications. 34
gowanda electronics
richardson rfpd
Dual Directional Coupler Model C8998, a 40 dB dual directional coupler, offers exceptional performance while covering a full 100 to 3000 MHz band and is rated for 250W CW. Operating with only 0.4 dB of insertion loss, this compact coupler measures just 3 x 2.2 x 1.1" and is designed for commercial and military applications. It is available with N Female and SMA Female connectors. 35
werlatone
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PAGE 24 APRIL 2012
ON THE MARKET
www.mpdigest.com
times microwave systems
Times-Protect Series The Times-Protect LP-BTRW RF lightning arrestor series addresses applications in the 20 to 1000 MHz spectrum. It adds to the existing LP-BTR family with a fully IP-67 weatherized feature. It is DC blocked for superior surge performance and has multi-strike capability. 36
mini-circuits
DC Pass Power Splitter/Combiner Model ZN3PD-622W+ is a wideband (1800 to 6200 MHz), DC pass power splitter/combiner with low insertion loss (0.9 dB typ.), low phase unbalance (3.0 typ.), and good isolation (22 dB typ.). Applications include PCS/UMTS, LTE, WiMAX, Wi-Fi, and Bluetooth. 37
rfmd
ISM Band Transmit/Receive Module The new RF6559 is a Front End Module (FEM) for 915 MHz AMR systems. It contains an integrated three-stage PA with 42 dB of gain and typical power output of 28 dBm. It allows for Tx/Rx on a single antenna via two integrated SPDT switches. 38
agilent technologies
New Test Software A new application based on its N7300 series chipset software platform, the Agilent N7304A-2, used with the companys EXT wireless communications test set, was created in collaboration with Altair Semiconductor and optimized for high-volume manufacturing test for equipment based on Altairs FourGee 3100/6200 TDD/FDD LTE chipset. 39
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Test Solution for VoLTE A new VoLTE (Voice over LTE) signaling and audio quality test solution for network operators and user equipment manufacturers is based on the R&S CMW500 wideband radio communication tester with new options and the R&S UPV audio analyzer. The CMW500 emulates an LTE network and the UPV assesses the voice transmission and voice quality of the LTE user equipment according to an objective set of test criteria. 40
rohde & schwarz
dymax corp.
Manual Dispensing Systems Manually controlled dispensing systems facilitate accurate dispensing through the use of a unique, normally closed, hand-held Model 200 diaphragm valve. The diaphragm valve is designed with a very lightweight, wand-style body to make it more ergonomic for users. 41
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PAGE 26 APRIL 2012
ON THE MARKET
www.mpdigest.com
fox electronics
AEC-Q200-Qualified Crystal Oscillators The widest range of AEC-Q200-qualified crystal oscillators is now available. The new oscillators are available with a frequency range of 2 up to 135 MHz, -40 to +85C, with 2 to 48 MHz available from -40 to +125C. Package sizes are 7 x 5mm and 5 x 3.2mm. 42
z-communications
Low Cost VCO Model SMV5550B-LF is a high performance VCO that generates frequencies between 5000 and 6000 MHz, covering the 1000 MHz bandwidth within 0 to 10V of control. It is an ideal wideband solution for satellite communication systems. 43
nordic semiconductor
Blue System-on-Chip (SoC) The new Blue nRF8002 System-onChip provides a low cost, ultra-low power, uniquely easy to design-in single chip solution for Bluetooth Smart wireless tags and other accessories such as bracelets, pendants, keychains, and armbands. 44
Powerful Multipath/Link Emulator

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Mass Air Flow Sensors The PMFc3000 family, a new line of improved Mass Air Flow Sensors, incorporate the latest MEMS and microelectronics innovations. By replacing the common membrane-cavity structure with a proprietary solid-state thermal isolation process, these sensors bring new levels of reliability to customers applications. 45
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Coaxial Band Stop Filter The ZX75BS-160+ is a band stop filter built in a rugged and compact connectorized package. Stopband is 150.3 to 169.7 MHz. This filter offers good rejection in stopband, has repeatable performance across lots and consistent performance across temperature. 46
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Industrial Cellular CDMA 1xRTT Modems Immediate availability and full design support capabilities for a family of easyto-use, rugged cellular CDMA 1xRTT modems for M2M applications from Maestro Wireless Solutions is now offered. The M100CDMA has been certified by regulatory bodies as well as Tier 1 network operators. The device is compact, with a high voltage range and resistant to power surges. 47
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protecting the sensitive devices connected to the limiter output. The surface mount RLM series is housed in a miniature plastic case, 0.25" x 0.31" x 0.17", while the VLM SMA connectorized series is housed in a rugged, patented unibody package for easy connection to sensitive devices following the limiter. Data sheets, performance curves, measurement data, and environmental specifications are available on our website, minicircuits.com. So why wait, order on our website and get delivery as quickly as the next day.
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ISO 9001 ISO 14001 AS 9100
U.S. Patents 7739260, 7761442
480 rev C
PAGE 28 APRIL 2012 Emerson, Cont from pg 8 rial twice, it will occur when the material has a thickness of wavelength. While this is a useful visualization it is not entirely accurate. There are no separate reflections off the front and back surface. Like virtually everything else in the microwave engineering world, absorber design is an impedance matching problem, in this case matching the impedance of a metal surface (Z=0) to the impedance of free space (Z=377 ohms). If the impedance seen by the wave at the surface of the material is equal to 377 ohms, the wave will be completely absorbed by the material. One of the earliest absorber types which is inherently narrowband is known as the Salisbury screen. The impedance at a metal surface is equal to zero. At one quarter wavelength in front of the surface the impedance will be infinite and the admittance will be zero. If a resistive sheet with surface resistivity equal to 377 ohms is placed here, the impedance will be equal to 377 ohms. Since this only works when the substrate material is wavelength a Salisbury screen is inherently narrowband.
WHITE PAPER
www.mpdigest.com in a Jaumann absorber. Since the low loss spacer material is usually a closed cell foam, a Jaumann exhibits inherent water resistance and light weight. Enclosed Space (Cavity Resonance) The physics governing absorber performance in an enclosed space is different than that governing performance in a free space volume. In an enclosed space, there are no propagating waves, only standing waves. In standing waves the E field and H field are 90 out of phase with each other. Material thickness is not as crucial as it is with free space absorbers since material resonance is not the goal. In cavity resonance damping the absorber is a high permittivity/ permeability material that will attract the energy and absorb it. Since the tangential magnetic field is at a maximum while the tangential electric field is zero on a perfect conductor, cavity resonance absorbers should have high magnetic loss
Reflected waves phase cancel to eliminate overall reflection
A cavity resonance absorber molded in place inside a circuit
Reflectivity-broadband Multilayer Several absorber types exhibit broadband reflectivity performance. Multiple discrete layers A magnetic elastomer absorber can be stacked which will enable the 377 ohm input impedance condition over a broader range of frequen- this type of material is a pyramid. These cies. The design of this class of material is are the highest performing absorbers with similar to design for a quarter wave trans- outstanding reflectivity (better than 50dB) and are usually used in anechoic chambers. former. The second type of impedance gradient absorber uses a parameter gradient. In Impedance Gradient A second class of broadband absorbers uses these absorbers, the material is a flat sheet an impedance gradient. The impedance at but the electrical parameters within the the front face is very close to 377 ohms but sheet will vary continuously with depth gradually reduces to zero ohms at the back into the absorber. This class of absorbers face. Since there is no abrupt transition is capable of better than 20 dB reflectivity layer, there is no point which will cause a performance over wide bands. large reflection. This impedance gradient can take either of two forms. The first Jaumann Absorber is a physical gradient where the material A Jaumann absorber extends the Salisbury is homogeneous but is formed in a shape screen concept to multiple layers. Resistive such that the wave sees a small portion of sheets separated by low loss dielectrics the material at the front face and a gradu- enable broadband performance to be ally increasing portion as it travels into the achieved. In general, the resistivity of material. The most common shape for the sheets decreases from front to back
Absorber Forms Magnetic-Magnetic absorbers utilize a filler with ferromagnetic properties. This gives the absorber a high permeability and high magnetic loss. Advantages include the ability to greatly compress the wavelength due to the high permeability enabling quarter wavelength resonant absorbers at a thickness that are a fraction of the free space wavelength. Also, magnetic absorbers are best for cavity resonance damping since the magnetic field is a maximum on the conductive surface where the absorber is placed. Disadvantages of magnetic absorber include weight and cost. Magnetic absorbers come in several elastomer forms including silicone, urethane, nitrile and neoprene. The matrix material is generally chosen for its physical properties. Magnetic absorbers are also available in a rigid epoxy form. These absorbers are easy to machine and are generally used in load applications. Dielectric Dielectric absorbers have no magnetic properties (i.e. =1). The loss mechanism is purely dielectric. The loss can arise from a variety of sources within the dielectric. Dielectric absorbers are usually made in a low cost foam form but can Emerson, Cont on pg 34
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PERSPECTIVES
Pinato, Cont from pg 18
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against the older Silicon power amplifiers supplied by NXP, Freescale and others for systems requiring efficient, flat, broad band (5 MHz to 1.2 GHz), highly reliable operation up to 1.2 GHz. A revolution in CATV systems deployment is taking place in the international realm and is driving the need for green in Europe and Asia, even making GaN a preferred technology in some contract proposals. Again the USA is leading in innovation and technology that is leading to systems innovation, but challenging our ability to manufacture and export a slightly exotic technology to the world for use in the higher end products. In Bangalore, the defense industry is touting the latest in avionics systems, RADAR systems and aeronautics and satellite systems, which are being driven by a new focus to upgrade systems for the country. Every major name one can think of from around the world is in Bangalore for the defense and RADAR show this year (see Microwave Product Digest story on the India Aeronautics Show, June 2011) and defense show later in 2012. India is committing over $15 billion USD to developing and purchasing new systems for upgrading the air force, navy and army for future systems deployments. In RADAR systems, the key power amplifier technologies are still silicon based bi-polar and LDMOS amplifiers. However, for the wider band RADAR applications, it is clear that the new technology of choice for the future is in GaN. Again, a technology developed in the USA, manufactured in the USA and which can be supplied by the USA (if regulations are loosened for key partners) to address potentially hundreds of millions of dollars in sales in the next five to eight years. Israel and some European firms are now using some of the U.S. technology and their own as well, aggressively pursuing this business and, with the limitations we place on our own exports, at an advantage over our U.S. companies. Our USA technology and systems developments are among the best in the world. While we could sell to some of our systems, there are potential billions to be made if U.S. firms step up and (like aircraft manufacturers do) partner with local in-country firms to comanufacture the final assemblies in the home country, giving the USA firm a lever to use their own technology and at the same time sell a U.S. (even partially
manufactured) product. The RADAR industry can consume very large quantities of GaN and Silicon amplifier products for the unique frequency bands needed for avionics, naval radar systems and airport ground systems. Frequency bands which can be as high as S-band, C-band and X-band for GaN as new efficient amplifiers competing with GaAs, and at S-band and lower frequencies for the silicon bi-polar amplifiers which have proven operation over the past 30 or so years. The opportunities are out there; markets driven by security concerns from unstable regions are defining the system needs and these all need a technology such as GaN to be fully successful. CTIA (as well as MTT) is the big show with all the latest in mobile systems, test equipment, platforms and gadgets and the technologies driving these systems. This year is no exception. With 4G making the big push and LTE as the new advanced fast platform, there is a plethora of new exciting approaches demonstrated this year at CTIA. Some of which can benefit, with the right approach, from the use of GaN and integration of functions into one multi-chip device (many chips in a package, emulating a MMIC approach, but more flexible), smaller than MCM approaches currently used in many systems. GaN devices, including high power switches along with the higher power amplifiers, make the products even more tantalizing to the designer. Which eventually leads us to the perceived big market for GaN; the Big Kahuna, and any technology for that matter, is mobile base station systems. GaN, just as GaAs and now a more refined higher frequency (ft) SiGe, all have a place in these new systems. Creative minds come up with systems and product design approaches we at the device level could not have conceived, but we must support them so that we can supply more advanced developments in the future. There was a time when some in the industry had the vision that GaN would compete with Si-LDMOS for base station platforms and that due to its efficiency, linearity and broadband characteristics, GaN would eat away at LDMOS lead position. Price, as a matter of course, would drop in step with demand. A similar story to what happened with GaAs HBT in the mid-90s, when many thought the technology could not be reliable enough or come
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PAGE 34 APRIL 2012 Emerson, Cont from pg 28 also be used with elastomers. Advantages are low cost and weight. Disadvantages are higher conductivity preventing usage in contact with electronic equipment and their lack of performance in most cavity resonance applications due to their lack of magnetic absorption.
WHITE PAPER
www.mpdigest.com on a conducting wall while the magnetic field is maximum. For this reason, magnetically loaded absorbers are the most effective in damping cavity resonances.
Near Field Absorbers Near field absorbers are a class of absorbers that are placed near or directly upon a radiating element. Since the energy in the near field is predominantly magMoldable netic, near field absorbers have Both magnetic and dielectric high magnetic permeability and absorbers are available in moldhigh magnetic loss. Also, since able forms. This could be a Field distribution of TE011 mode inside an empty cavity they are often in direct contact two part liquid which cures at with circuit elements, they must room or elevated temperatures have very low conductivity. or could be in the form of injection moldEven the best designed circuit will conable pellets. tain elements that will resonate and radiate at particular frequencies. These radiators Absorber Applications could be inductors or capacitors or conOften after a circuit is designed and tested necting wires that will behave differently it must be properly shielded and physically at certain frequencies. In the near field protected before it can be put into use. This most of the radiated energy is magnetic so usually involves covering the entire circuit radiators are modeled as a loop antenna. with a metallic cover. While providing Magnetic energy dies off very quickly with adequate shielding and protection the cover distance but can still interfere with nearby can introduce problems of its own. It can circuit components. create conductive cavities that will resonate Near field modeling consists of exciting a if stimulated at one of its resonant frequenloop antenna and determining the coupling cies. This cavity resonance introduces E to the test antenna (also a loop). Coupling and H fields across the cavity that can seriis compared after placing an absorber mateously impact the circuit performance. The rial nearly in contact with the loop. correct absorber material when introduced to the cavity can damp the resonance, Loads enabling proper operation of the circuit. Microwave terminations are waveguide or In a rectangular cavity the resonant frequencies are given by Note the j in front of the equations for coax sections that present low reflections to the H fields. This indicates that the mag- the incoming wave. Terminations are used netic field is 90 out of phase with the elec- in many microwave systems such as circutric field. This means that when the electric lators or couplers to eliminate unwanted field is at its maximum, the magnetic field is signals. A termination must be able to zero and vice versa. Since the impedance at absorb the incident energy, hence the use Where m, n, and p are indices indicating a given point is proportional to the E field of absorber load material. A load must the number of half wavelengths across the divided by the H field, the cavity resonance absorb over the entire waveguide band and x, y, and z dimensions of the cavity respec- can cause wild swings in impedance across is therefore shaped to present an impedance taper to the incoming wave. Load materials tively. The cavity will resonate at frequen- a cavity. The illustrations at left show the electric are generally magnetic absorbers which are cies determined by the cavity dimensions. The dominant resonant mode is similar to and magnetic field norms for two differenct easily machined or molded. the TE01 waveguide mode but chosen with cavity modes. Note that where the electric Millimeter Wave Absorbers the first zero of sin(z). This mode is desig- field is strong, the magnetic field is weak. When an absorber is inserted into the Different modes of analysis and absorber nated the TE011 mode. The TE011 mode is the lowest frequency at which the cavity cavity, the high permittivity/permeability types are needed in the RF/microwave band can support a cavity resonance. Below this of the absorber causes the energy to move depending upon whether the absorber is frequency, a cavity resonance will not exist. into the absorber. The field equations are used in free space or inside an enclosed cavFor an empty cavity, the cutoff frequency too complex to solve directly for a par- ity. Absorbers for free space reflectivity or corresponds to where the longest dimen- tially filled cavity but using Finite Element insertion loss use a different design philososion of the cavity is equal to 1/2 free space Method (FEM) software solutions for the phy than for cavity resonance reduction. fields can be found. Note in the third illus- Most applications in the RF/microwave wavelength. The equations governing the field distri- tration how virtually all of the magnetic realm are clearly one or the other. The energy resides in the absorber. The higher physics will change somewhat as we move bution of the TE011 mode are as follows the permittivity and permeability the more into millimeter waves. Even a physically the energy wants to go into the material. small cavity or enclosure could encompass Recall from basic electromagnetic theory several wavelengths at millimeter wave frethat the tangential electric field is zero Emerson, Cont on pg 40
PAGE 36 APRIL 2012
PERSPECTIVES
www.mpdigest.com
GaN? down the cost curve enough to satisfy One glitch: LDMOS is a cheap wafer the masses, but it did eat away at exist- platform available in very large wafer ing technologies to become the domi- diameters with a mature semiconductor nant technology in higher frequency, industry backing it up. Well, maybe two efficient and cost-effective RF systems. glitches. Base-station designers design Can history repeat itself with yet anoth- for specific frequencies and bands for er new and nascent technology such as each base-station platform, negating
the broadband power advantage which GaN brings to the designer. However, in time, the cost of multiple amplifiers in a multiplatform base-station will be leveraged, once costs drop in production, towards a one GaN amplifier solution. GaN will define its space very soon for those who need a more efficient, green-er technology for a multitude of applications which will drive the markets for RADAR, CATV, broadband multi-platform BTS and repeaters as well as photonics and avionics communications systems. Key investments in GaN technology are continuing at greater levels due to the success of GaN in previous years developments sponsored by industry and government. With this success come even more challenges to push the technology, in different flavors if you will, into new realms. GaN for CATV requires a broadband, on the lower frequency side of the spectrum (50 MHz to 1.5 GHz), very low distorWWW.MPDIGEST.COM 229
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ON THE MARKET
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Field distribution of TE032 mode inside an empty cavity
Field distribution of TE032 mode inside an empty cavity
Field distribution of TE032 mode inside an empty cavity Emerson, Cont from pg 34 quencies. Where is the line dividing a free space application from a cavity application? Since there is no hard boundary separating free space from cavity resonance, electromagnetic modeling must be used. Modeling of the field distribution inside cavities of different dimensions compared to a wavelength indicate a breakdown of cavity resonance behavior at a cavity size around 5 wavelengths. At millimeter wave frequencies this could be smaller than 1". This quasi-free space region requires different absorber solutions, requiring different absorber types than those used at lower frequencies. Reflection Reduction Any system that transmits energy can experience interference from reflections back to the transmitter. Also, unwanted reflections can interfere with other systems. Often the reflection source can not be moved as with a building or a ships mast. Absorbers can then be used to reduce the reflection level. Typical reflectivity reduction for weather resistant outdoor absorber material is 20dB which will eliminate 99% of
The image on the left is the electric field distribution inside a cavity approximately 2 wavelengths in dimension. Note the clearly delineated resonance peaks indicating cavity resonance. The image on the right is the electric field distribution inside a cavity >10 wavelengths. While there appears to be some resonant behavior, there are clearly some propagating elements as well. Parameter Test Methods Accurate measurement of electromagnetic parameters is critical to modeling the performance of microwave absorbers. The electric permittivity *=-j and magnetic permeability *=-j are, in general functions of the frequency so swept frequency methods are desired. At low frequencies (<1 GHz) parameters can be measured using an impedance analyzer with custom test fixtures. The permittivity test fixture measures the capacitance of two parallel test heads both with and without the material under test. The permittivity is then derived from the capacitance. The permeability is determined from the change in inductance of a cylindrical cavity by insertion of a donut shaped MUT. Very good results can be found down to 1 MHz. At higher frequencies measuring the capacitance or inductance no longer yields satisfactory results and field theory must be used. Parameter measurement testing at these frequencies entail sending a wave into the material and measuring the material response. Since 4 results are needed (real Emerson, Cont on pg 54
the reflection. Care must be taken that the chosen absorber is designed to absorb at the transmit frequency. Radar Cross Section Reduction (RCSR) Absorbers can also be used to reduce the radar cross section of a target object. By reducing the reflection level the object will present a smaller cross section. However, due to the narrowbanded performance of thin radar absorbent material (RAM) and the thickness and weight of broadband RAM, it is difficult to achieve effective radar cross section reduction using absorber alone. Anechoic Chambers Anechoic chambers are used to create a free space condition in an enclosed room. Very high performance absorber material is used on the walls, ceiling and floor to eliminate reflections. Reflectivity of absorbers used in anechoic chambers can be 50dB or better. That level of performance is critical to guaranteeing a successful antenna or radar cross section test in a weatherproof secure environment.
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PAGE 42 APRIL 2012
IN THE NEWS
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RFMD Surpasses One Billion Power Amplifiers Shipped to China-Based Manufacturers

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has shipped over one billion cellular power amplifiers (PAs) to handset manufacturers headquartered in the Greater China area. This significant industry milestone demonstrates RFMDs ongoing commitment to providing China-based customers with operational scale, technological innovation and an industryleading cost structure. RFMD opened its first manufacturing facility in Beijing in 2002 in support of local China-based manufacturers and international manufacturers with operations in China. RFMD extended its commitment to China in 2007 with the opening of its Shanghai Design Center and a major expansion of its Beijing facility. RFMD today offers the industrys most complete end-to-end source for design, manufacturing, field applications engineering and sales support, with approximately 2,000 employees located in China supporting hundreds of customers and baseband providers. Bob Bruggeworth, president and CEO of RFMD, said, This considerable milestone exemplifies RFMDs long-standing commitment to our customers based in China. As we commemorate our tenth year of operations in Greater China, we anticipate strong growth with China-based customers, driven by continued innovation in 2G components and the industrys most innovative and most reliable RF product portfolio for the rapidly growing 3G and TD-SCDMA/TD-LTE smartphone markets.
AWR Expands Patent Portfolio

AWR Corporation, the innovation leader in high-frequency EDA software, has been issued a US Patent by the United States Patent and Trademark Office for a block-specific harmonic balance analysis system. Originally filed in December of 2008, US Patent No. 8,131,521 addresses circuit simulation using multi-rate harmonic balancing. Specifically, the invention known as MRHB and first available within AWRs 2009 product release speeds the design of complex circuits by enabling the effective reduction of analysis dimensions (e.g., frequency or time). MRHB satisfies the needs of our customers to perform steady-state analysis of distributive or dispersive systems with more than two or three signal sources, said Taisto Tinttunen, chief director of engineering of AWRs APLAC division, who explained the limitation of previous tools and the significance of MRHB. Harmonic balance engines traditionally do not scale well as the number of tones increases. As a result, simulating a complete receiver or high-speed digital circuit was extremely difficult or impossible because of the high computational cost of nonlinear model evaluations and the extensive memory utilization. MRHB eliminates this limitation by defining harmonic balance analysis on a block-by-block basis. Reducing filtered sources and their harmonics by defining new hybrid tones based on linear combinations of the source tones, as MRHB does now, makes it possible to simulate designs that were previously beyond the reach of the harmonic balance technique. AWR was also recently awarded U.S. Patent No. 7,346,480, entitled Impedance Mismatch Modeling in a Data Flow or Discrete Time Based System Simulation. This invention pertains to directional connectivity described by the interconnections of blocks in a schematic (or netlist) and can be used to propagate arbitrary data from one block to another. For instance, the propagation of impedance data for discrete time-based simulation programs allows for simulation under less than ideal termination conditions between blocks, reducing simulation time and complexity and producing better results.
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RFMW, Ltd is your one stop source for RF and Microwave components, connectors and cable assemblies. From antenna to baseband, our only focus is supporting your RF/Microwave design requirements with the best suppliers, best technology and the highest level of technical support available in RF distribution. To find out how RFMW can support your design, and see our complete list of leading edge suppliers, download our latest line card at
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technology. We have certainly experienced some amazing transformations in our lifetime, from discrete transistors to ultra-powerful microprocessors. We should embrace the advance of proven technical progress, in any form, but also keep a focus on those innovations that are delivering proven performance, while newer technologies emerge. It is what our customers expect and deserve.
To paraphrase Mark Twain, claims of quartzs demise are greatly exaggerated. In the meantime, let us all keep a proper perspective on timing.
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mini-circuits
Coaxial Power Splitter/Combiner Model ZAPD-2-272+ is a coaxial power splitter/combiner that is wideband (800 to 2700 MHz) and features low insertion loss (0.4 dB typ.), good isolation (25 dB typ.), good amplitude unbalance (0.05 dB typ.) and phase unbalance (0.7 typ.). 54
Surface Mount Clock Oscillator The COM2 Series are the first free running non-temperature compensated clock oscillators at stability of down to +/-10 PPM over an all-inclusive room plus temperature stability from -40 to +85C in a frequency range of 2.5 to 55 MHz. Its ultra-small package is 5.0 x 3.3mm. 55
ruby quartz
hittite microwave
DC to 24 GHz Time Delay The company has recently expanded its Broadband Time Delay/Phase shifter portfolio by adding the HMC911LC4B, which is ideal for 10G, 40G RZ-DQPSK, 100G DWDM RZ Carver clock chain and skew adjustments in the fiber optic domain. RoHS compliant. 56
Remember that kid in high school who could explain anything technical?
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Driver Solutions for 100G Applications The MAOM-003105 is a 4 channel 8Vpp driver for 100G DP-QPSK applications in a GPPO package. It consumes very low power, 4W for 4 channels @ 6Vpp, and has gain of greater than 30 dB. Single- and dual-channel 100G coherent drivers in surface mount packages are also offered. 57
He grew up and opened his own technical PR agency.

His name is Barry Manz and hes the source youve been looking for to create hard-hitting editorial that clearly describes your products and technology. He knows the RF and microwave wireless world from the ground up, and has worked for clients of all sizes since 1986. In short, he and his staff know their stuffand theyre connected. Big time. Which means youll get the results youve been looking forevery time. For technical editorial you can count on, count on Manz Communications. Lets talk. Call Barry at 551.206.7177.
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IQ Modulators and Demodulators Immediate availability and full design support capabilities for a group of high performance quadrature modulators and demodulators for operation at frequencies up to 2.4 GHz from Analog Devices, Inc. are now available. The devices offer a combination of performance, broadband operating frequency, and flexible device architecture that makes them ideal for a variety of wireless infrastructure applications. 58
werlatone
Bi-Directional Coupler Model C8060-102, using the companys breakthrough technology, is a high power bi-directional coupler that covers the entire 200 to 6000 MHz band at 200W CW. It is rated for 200W CW and is ideal for lab environments where one coupler can meet multiple testing requirements. Operating temperature is -55 to +85C and size is 4.8 x 0.88 x 0.5". Designed for military and commercial applications. It is available with SMA female connectors. 59
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tellurian technologies
New Crystal Oscillator The T4000HCSL is a crystal oscillator with a small package size (5.0 x 3.2 x 1.3mm) that provides a high-speed, current steering logic output (HCSL). It is designed to reduce the cost and need for the additional circuitry to translate CMOS, LVDS, and LVPECL outputs. 60
krytar
Compact 90 Hybrid Couplers Two new 90 hybrid couplers have been introduced, each delivering 3 dB of coupling over the broadband frequency range of 1.4 to 26.5 GHz and 1.7 to 26.5 GHz in single compact packages. They offer superior low insertion loss, high directivity and tight coupling. 61
api technologies
Automatic Gain Control (AGC) Amps A new line of customizable AGC amplifiers from the companys Spectrum Microwave family of products is now available. They feature a ruggedized design, automatic output control and high RF input damage protection. The amps come in five frequency ranges. 62
m/a-com technology solutions
Driver Solutions for 100G Applications The MAOM-002204 is an integrated 4 channel 28G EML driver solution for CFP2, with very low power consumption and packaged in a small size SMD. It is also available in a single channel as MAOM-02203. 63
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Quad-Band GSM/GPRS Tx Module The RF3235 is a quad-band (GSM850/ EGSM900/DCS1800/PCS1900) GSM/ GPRS Class 12-compliant transmit module with six transmit/receive ports for UMTS use that also serve as GSM Rx ports. This transmit module builds upon the companys leading PowerStar integrated power control technology, SOI (silicon-on-insulator) switch technology, and integrated transmit filtering for best-in-class harmonic performance. 64
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mini-circuits
FlexTest Armored Test Cable Model KBL-4FT-LOW+ is an armored test cable measuring four feet long and featuring extra rugged construction, including a protective shield and strain relief for longer life. Covering DC to 40 GHz, it boasts extremely low insertion loss and operating temperature of -55 to +85C. 65
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tion, power efficient, at a moderate power output and thermally efficient devices. While GaN for higher frequency (in avionics, for example) will necessitate not only thermal and power efficiency at microwave frequencies, but also a stable high power output. The requirements for RADAR systems are not too different, but again the broadband characteristics of GaN not only make them a most efficient solution, it also makes them attractive as the power output of GaN per mm2 of device real estate is nearly unmatched by any other available technology. Which brings us to the biggest potential market, telecom. In the end, it is the continuous investments into the commercialization of GaN that will determine its ability to compete in the future into new systems. It will be the governments willingness to allow the technology to be fielded around the world openly in commercial and ground systems applications which will also benefit the USA firms who drive the systems and technology. It, like HBT before it, will be the technology which opens the spectrum of opportunity for the USA to take leadership in the high technology world of RF and microwave communications and security systems. New gadgets will be developed by leveraging the GaN advantages and the consumers will pay for these faster, smaller and more slick products, just as we have done with early versions of smartphones and the more powerful systems driving the faster and faster connections. The counter to this position is the erosion of high technology, challenging positions in the future for our young, up and coming talent in the engineering, device physics and technical worlds. Without the investments in the technology, advances in developments in physics and material sciences, we will leave the future of technology and product development (something we in the USA need to pick up pace with again) to those who are funded outside of our country. We educate many from abroad and are very fortunate to keep a very large percentage working in the USA after graduation. It is less fortunate that we do not yet have programs to foster the growth of our youth to have the desire to enter into the sciences. Fields that require
critical thinking skills, a balance of short attention and creativity with that of a persistence to pursue to the end a dream to make something happen. We must begin to make the sciences something that creates dreams, much like the space program did for many of our generation, and desires for something better. Not just the financial markets and stock markets which have drained us of so many of our potential talent to enter into the sciences. Finances are necessary for us all to invest and grow, however, we must also keep in mind that without the dreamers and drivers of products and technology, there will be less to invest into in our future. We need these dreamers who are not afraid not only to spur innovation, but also to spur re-innovation and not be afraid to build upon what others have tried to do. To be creative where those have feared to tread and pursue what they thought, and not just that others before them, the customers and markets would want. Great re-innovators in our time include the likes of Edison, who pursued the challenge of finding the right combination of filaments, even though others before him had failed. Then, in more recent times, Steve Jobs and his team at Apple. Ready to throw in the proverbial towel (or so some suspected), but then took an exciting technology known as MP3, players which had already existed, and created a cleaner, smoother interface with an even slicker software interface than what had existed previously (at least legally) in industry, creating the groundbreaking iPod. It is a key time for us all to reflect on what we in America do best. Innovate! Dont be shy about innovation become the team who is pushing innovation out to the world, even re-learning how to manufacture high value products where it makes sense to do so. Our predecessors taught us a lot about ourselves: That the financial nerds who invest in our technology and innovation nerds create some of the most fascinating technology and systems that the world demands from us. Lets get it out there and make some money for the USA!
WWW.MPDIGEST.COM 72
Our re-Flex cables have been tested to more than 24,000 bends with no electrical or mechanical degradation.
center conductor Silver plated OFHC copper per ASTM B-298
dielectric Multi-ply PTFE laminate per ASTM D-1457
shield Silver plated OFHC copper foil
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IWs re-Flex cables were designed to offer an alternative to standard semirigid & conformable cables. The unique design of these cables features a laminated PTFE dielectric, a silver plated copper foil shield, and a tightly woven copper braid. They have the same leakage characteristics and mechanical dimensions as standard semi-rigid cable. Stock assemblies use shell style & direct solder SMA plugs. Non-stock assemblies are available with relevant popular RF connector styles. Standard cable diameters are RF .085 & .141, with RF .047 & .250 Now Available! An FEP jacket is also available for all four cable types to eliminate any risk of a shorting hazard. Impedence: time delay: 50 1.4 ns/ft rF leakage: Equivalent to semi-rigid cable temp range: -55C to 135C Bend radius: 1/16 inch for RF 085 1/8 inch for RF 141
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FEATURE ARTICLE
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Figure 2: Typical PLL In-Band Spurious Performance Hittite, Cont from pg 14 in-band spurious performance of -70 dBc is shown in Figure 2. Even further improvements of below -100 dBc can be achieved with high performance VCOs and tunable references. In addition to spurious, synthesizer phase noise can corrupt the signal being measured or generated, and must therefore be very low if used in an instrument or a high performance commercial radar. The phase noise and the integrated phase noise (or jitter) are dependent on the synthesizer architecture. A PLL controls the phase of the VCO output within the
Figure 3: HMC983LP5E Built-In Automatic FMCW Sweeper Feature the normalized phase noise, and provides a good way to compare the relative performance of different synthesizers. The FOM of Hittites HMC983LP5E/ HMC984LP4E PLL chipset solution is best-in-class at -230 dBc in HiK fractional mode, which is close to 10 dB better than a typical fractional synthesizer in the market. In integer mode, the FOM is further improved to -233 dBc. From the last equation it is clear that, for the same VCO frequency and FOM, the fractional PLL phase noise can be improved by increasing the phase detector frequency. Naturally, this is only possible if the phase detector can run faster without adverse non-linear effects, which is the major reason preventing typical fractional PLLs in the industry from achieving higher phase detector rates. The maximum phase detector frequency of a typical commercial PLL on the market is 32 MHz. The Hittite HMC984LP4E phase detector can operate at up to 125 MHz in fractional mode. This represents a 3.9x or 5.9 dB improvement, compared with competing devices. Together with the 10 dB improvement in the typical FOM, the HMC983LP5E offers close to a 16 dB advantage over the phase noise of other PLLs in the industry. If the VCO phase noise contriHittite, Cont on pg 58
bandwidth of the feedback loop. If the VCO noise contribution is low, then the integrated phase noise (the sum of all the phase noise) of the end application is dominated by the phase noise (PN) inside the loop bandwidth (BW). A simple way to estimate the integrated phase noise (jitter) is given by the equation below: Integrated Phase Noise (rad rms) = PN-inside-the-Loop * BW * , or in dB, Integrated Phase Noise (dBc) = PN Inside-theLoop (dBc/Hz) + BW (dBHz) + 5dB
The single-sideband phase noise PN inside the loop is calculated as follows: PN inside-the-loop (dBc/Hz) = FOMPLL + 20log10(FVCO/FPD) + 10log10(FPD), or equivalently rearranged to separate the VCO and phase detector effects: PN inside-the-loop (dBc/Hz) = FOMPLL + 20log10(FVCO) 10log10(FPD) The FOMPLL or the Figure of Merit (FOM) of the PLL is
OCTAVE BAND LOW NOISE AMPLIFIERS Gain (dB) MIN Noise Figure (dB) Power -out @ P1-dB 3rd Order ICP Model No. Freq (GHz) CA01-2110 0.5-1.0 28 1.0 MAX, 0.7 TYP +10 MIN +20 dBm CA12-2110 1.0-2.0 30 1.0 MAX, 0.7 TYP +10 MIN +20 dBm CA24-2111 2.0-4.0 29 1.1 MAX, 0.95 TYP +10 MIN +20 dBm CA48-2111 4.0-8.0 29 1.3 MAX, 1.0 TYP +10 MIN +20 dBm CA812-3111 8.0-12.0 27 1.6 MAX, 1.4 TYP +10 MIN +20 dBm CA1218-4111 12.0-18.0 25 1.9 MAX, 1.7 TYP +10 MIN +20 dBm CA1826-2110 18.0-26.5 32 3.0 MAX, 2.5 TYP +10 MIN +20 dBm NARROW BAND LOW NOISE AND MEDIUM POWER AMPLIFIERS CA01-2111 0.4 - 0.5 28 0.6 MAX, 0.4 TYP +10 MIN +20 dBm CA01-2113 0.8 - 1.0 28 0.6 MAX, 0.4 TYP +10 MIN +20 dBm CA12-3117 1.2 - 1.6 25 0.6 MAX, 0.4 TYP +10 MIN +20 dBm CA23-3111 2.2 - 2.4 30 0.6 MAX, 0.45 TYP +10 MIN +20 dBm CA23-3116 2.7 - 2.9 29 0.7 MAX, 0.5 TYP +10 MIN +20 dBm CA34-2110 3.7 - 4.2 28 1.0 MAX, 0.5 TYP +10 MIN +20 dBm CA56-3110 5.4 - 5.9 40 1.0 MAX, 0.5 TYP +10 MIN +20 dBm CA78-4110 7.25 - 7.75 32 1.2 MAX, 1.0 TYP +10 MIN +20 dBm CA910-3110 9.0 - 10.6 25 1.4 MAX, 1.2 TYP +10 MIN +20 dBm CA1315-3110 13.75 - 15.4 25 1.6 MAX, 1.4 TYP +10 MIN +20 dBm CA12-3114 1.35 - 1.85 30 4.0 MAX, 3.0 TYP +33 MIN +41 dBm CA34-6116 3.1 - 3.5 40 4.5 MAX, 3.5 TYP +35 MIN +43 dBm CA56-5114 5.9 - 6.4 30 5.0 MAX, 4.0 TYP +30 MIN +40 dBm CA812-6115 8.0 - 12.0 30 4.5 MAX, 3.5 TYP +30 MIN +40 dBm CA812-6116 8.0 - 12.0 30 5.0 MAX, 4.0 TYP +33 MIN +41 dBm CA1213-7110 12.2 - 13.25 28 6.0 MAX, 5.5 TYP +33 MIN +42 dBm CA1415-7110 14.0 - 15.0 30 5.0 MAX, 4.0 TYP +30 MIN +40 dBm CA1722-4110 17.0 - 22.0 25 3.5 MAX, 2.8 TYP +21 MIN +31 dBm ULTRA-BROADBAND & MULTI-OCTAVE BAND AMPLIFIERS Gain (dB) MIN Noise Figure (dB) Power -out @ P1-dB 3rd Order ICP Model No. Freq (GHz) CA0102-3111 0.1-2.0 28 1.6 Max, 1.2 TYP +10 MIN +20 dBm CA0106-3111 0.1-6.0 28 1.9 Max, 1.5 TYP +10 MIN +20 dBm CA0108-3110 0.1-8.0 26 2.2 Max, 1.8 TYP +10 MIN +20 dBm CA0108-4112 0.1-8.0 32 3.0 MAX, 1.8 TYP +22 MIN +32 dBm CA02-3112 0.5-2.0 36 4.5 MAX, 2.5 TYP +30 MIN +40 dBm CA26-3110 2.0-6.0 26 2.0 MAX, 1.5 TYP +10 MIN +20 dBm CA26-4114 2.0-6.0 22 5.0 MAX, 3.5 TYP +30 MIN +40 dBm CA618-4112 6.0-18.0 25 5.0 MAX, 3.5 TYP +23 MIN +33 dBm CA618-6114 6.0-18.0 35 5.0 MAX, 3.5 TYP +30 MIN +40 dBm CA218-4116 2.0-18.0 30 3.5 MAX, 2.8 TYP +10 MIN +20 dBm CA218-4110 2.0-18.0 30 5.0 MAX, 3.5 TYP +20 MIN +30 dBm CA218-4112 2.0-18.0 29 5.0 MAX, 3.5 TYP +24 MIN +34 dBm LIMITING AMPLIFIERS Input Dynamic Range Output Power Range Psat Power Flatness dB Model No. Freq (GHz) CLA24-4001 2.0 - 4.0 -28 to +10 dBm +7 to +11 dBm +/- 1.5 MAX CLA26-8001 2.0 - 6.0 -50 to +20 dBm +14 to +18 dBm +/- 1.5 MAX CLA712-5001 7.0 - 12.4 -21 to +10 dBm +14 to +19 dBm +/- 1.5 MAX CLA618-1201 6.0 - 18.0 -50 to +20 dBm +14 to +19 dBm +/- 1.5 MAX AMPLIFIERS WITH INTEGRATED GAIN ATTENUATION Model No. Freq (GHz) Gain (dB) MIN Noise Figure (dB) Power -out @ P1-dB Gain Attenuation Range CA001-2511A 0.025-0.150 21 5.0 MAX, 3.5 TYP +12 MIN 30 dB MIN CA05-3110A 0.5-5.5 23 2.5 MAX, 1.5 TYP +18 MIN 20 dB MIN CA56-3110A 5.85-6.425 28 2.5 MAX, 1.5 TYP +16 MIN 22 dB MIN CA612-4110A 6.0-12.0 24 2.5 MAX, 1.5 TYP +12 MIN 15 dB MIN CA1315-4110A 13.75-15.4 25 2.2 MAX, 1.6 TYP +16 MIN 20 dB MIN CA1518-4110A 15.0-18.0 30 3.0 MAX, 2.0 TYP +18 MIN 20 dB MIN LOW FREQUENCY AMPLIFIERS Gain (dB) MIN Noise Figure dB Power -out @ P1-dB 3rd Order ICP Model No. Freq (GHz) CA001-2110 0.01-0.10 18 4.0 MAX, 2.2 TYP +10 MIN +20 dBm CA001-2211 0.04-0.15 24 3.5 MAX, 2.2 TYP +13 MIN +23 dBm CA001-2215 0.04-0.15 23 4.0 MAX, 2.2 TYP +23 MIN +33 dBm CA001-3113 0.01-1.0 28 4.0 MAX, 2.8 TYP +17 MIN +27 dBm CA002-3114 0.01-2.0 27 4.0 MAX, 2.8 TYP +20 MIN +30 dBm CA003-3116 0.01-3.0 18 4.0 MAX, 2.8 TYP +25 MIN +35 dBm CA004-3112 0.01-4.0 32 4.0 MAX, 2.8 TYP +15 MIN +25 dBm
VSWR 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 VSWR 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 VSWR 2.0:1 2.0:1 2.0:1 2.0:1 VSWR 2.0:1 2.0:1 1.8:1 1.9:1 1.8:1 1.85:1 VSWR 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1
CIAO Wireless can easily modify any of its standard models to meet your "exact" requirements at the Catalog Pricing. Visit our web site at www.ciaowireless.com for our complete product offering.
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Emerson, Cont from pg 40 and imaginary , ), 4 measurements need to be taken on a sample which are usually the magnitude and phase of S11 (reflection) and S21 (transmission) through the sample. If it is known that the material has no magnetic components (=1) then the electric permittivity can be determined with 2 measurements, S11 magnitude and phase or S21 magnitude and phase. While free space measurements of reflection/transmission amplitude and phase have yielded good results the best results are seen in closed systems using coaxial lines or waveguides. In these cases the calibration of the network analyzer is critical. Full 2 port calibration or TRL calibration is needed for accurate phase measurements, particularly of reflection. Sample fit inside the coax or waveguide is very important as a poorly fit sample will not yield good results. As frequencies extend into millimeter waves, calibration and sample fit become even more critical due to the short wavelength. For non-magnetic material, free space techniques can yield excellent results all the way up through millimeter waves. It is much more straightforward to measure transmission phase plus good measurements can be made in free space eliminating the sample fit problem. Attenuation Attenuation is a measure of how much a wave propagating through a material is attenuated. It is not a direct measurement but is calculated from the materials complex permittivity and permeability. The definition is that if all space is filled with the material, a wave will attenuate at this rate per unit distance. Attenuation is usually expressed in dB/cm. Attenuation values do not relate directly to any particular measurement and the reader should be cautioned about using the numbers to predict reflectivity. It is used to compare the relative absorption of different materials. In any real world situation, the material impedance must also be taken into account. Attenuation in dB/cm is given by
absorbers. The IEC has designated four tests to measure noise suppression of near field absorbers. Intradecoupling ratio This test is designed to measure the effectiveness of the absorber in reducing the coupling between elements on the same side of the absorber sheet. Two loop antennas are deployed as illustrated on the right. The coupling between the antennas is measured and the absorber is placed above the loops and the coupling compared to the case with not absorber Interdecoupling ratio This test measures the absorber effectiveness when the source and receiver are on opposite sides of the absorber. The setup is the same as for intradecoupling ratio but in this case the absorber sheet is placed between the antenna loops Transmission Attenuation Power Ratio-This test measures the effectiveness of the absorber in suppressing current noise along a printed circuit board. A microstrip line is used and transmission and reflection characteristics measured. The material is then place on top of the conductor and transmission and reflection remeasured. Radiation suppression ratio-This rest requires an anechoic chamber. The microstrip line is used as the source and the radiated emissions at a fixed distance away is measured. NRL Arch The NRL Arch is the industry standard for testing the reflectivity of materials. Originally designed at the Naval Research Laboratory, the NRL Arch allows for quick, repeatable non-destructive testing of microwave absorbent materials over a wide frequency range. Reflectivity is defined as the reduction in reflected power caused by the introduction of an absorbent material. This reduction in power is compared to a perfect reflection which is approximated very well by the reflection off a flat metallic plate. As seen in the diagram below, an NRL arch consists of a transmit and receive antenna which are oriented towards a metal plate. To measure normal incidence reflectivity the antennas are located as close to each other as physically possible. Absorbent material is often used to minimize antenna cross talk. The antennas can be located anywhere on the arch to allow measurements of performance at off normal angles of incidence with the practical limitation of the ability to separate the signal from the material under test from the direct antenna to antenna cross talk. In general a network analyzer is used for measurements on an NRL Arch to provide both the stimulus and the measurement. A calibration is performed by measuring the resultant power reflecting off the metal plate over a broad frequency range. This is established as the perfect reflection or 0 dB level. The material under test is then placed on the plate and the reflected signal measured in dB. Time domain gating may be used to eliminate antenna cross Emerson, Cont on pg 56
Near Field Test Near field interference takes several forms so there is no single test that suffice to fully characterize the performance of near field
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NFfrom 0.5 dB, IP3 to + 48 dBm, Gain 8 to 31 dB, Pout to + 30 dBm

Think of all you stand to gain. With more than 124 catalog models, Mini-Circuits offers one of the industrys broadest selection of low-cost MMIC amplifiers. Our ultra-broadband InGaP HBT and PHEMT amplifiers offer low noise figure, high IP3, and a wide selection of gain to enable optimization in your commercial, industrial or military application. Our tight process control guarantees consistent performance across multiple production runs, so you can have confidence in every unit. In fact, cascading our amplifiers often results in less than 1dB total gain variation at any given frequency. These MMIC amplifiers can even meet your most critical size and power consumption requirements with supply voltages as low as 2.8 V, and current consumption down to 20 mA, and packages as small as SOT-363. Visit our website to select the amplifier that meets your specific needs. Each model includes pricing, full electrical, mechanical, and environmental specifications, and a full set of characterization data including S-Parameters. So why RoHS compliant wait, place your order today and have units in your hands as early as tomorrow.
145
ISO 9001
ISO 14001 AS 9100
U.S. Patents 7739260, 7761442
476 Rev F
PAGE 56 APRIL 2012
WHITE PAPER
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Insertion loss/phase test fixture for broadband parameter measurement of non-magnetic material
An NRL Arch for millimeter wave measurements Emerson, Cont from pg 54 talk and reduce the error introduced by room reflections. The size of the material under test and the antenna to plate distance are determined by the desired frequency range of test. A standard setup tests from 2-18 GHz using a material size of 12x12" or 24x24" and an antenna to plate distance of 30-36". Lower frequency (longer wavelength) testing would require a larger sample size and longer antenna-plate distance. Higher frequencies could use a smaller arch and sample size. Insertion Loss Insertion loss is a measure of how much microwave energy traveling from Point A to Point B is reduced by the introduction (or insertion) of a microwave absorbent material in the path. An insertion loss measurement does not differentiate between all the factors which will affect the reduction in power including reflection from the material and loss as the wave transits through the material. A well designed setup for testing insertion loss would include two antennas oriented so that their maximum directivity is towards each other. They will be separated sufficiently to satisfy far field requirements though the greater the separation, the larger the sample size must be to minimize errors caused by energy leaking around the edges of the sample under test. In practice insertion loss measurement is straightforward. A signal is transmitted through one antenna and the response measured at the second antenna. This establishes the reference or 0 dB level and is usually measured as a function of frequency. The material under test is then placed between the antennas and a measurement is performed. The insertion loss is expressed in dB as a function of frequency. For the full downloadable version, visit our website www. eccosorb.com. Paul Dixon can be reached at pdixon@eccosorb.com.
Insertion loss/phase test fixture for broadband parameter measurement of non-magnetic material
HIFET Ultra Wide-Band, High-Power Amplifiers
AMCOM has overcome the difficulties of matching the high power devices low impedance to 50 ohms by adopted a technique of stacking the power devices both DC and RF in series (HIFET). This technique increases both the DC voltage as well as the optimal impedance. AM004047SD-2H 30MHz to 4000MHz 50W saturated output power 25dB power gain
AMCOM (www.amcomusa.com) has other wide-band MMIC PA products from 10MHz to 11GHz in both GaAs PHEMT and GaN HEMT.
AM006041SD-2H 30MHz-6GHz 30W saturated output power 25dB power gain
The RF Power House
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EMErSOn & CuMInG MICrOWavE PrODuCTS

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PAGE 58 APRIL 2012 Hittite, Cont from pg 52 bution is comparable to that of the PLL within the loop bandwidth, then it can be shown that for every 2 dB of improvement in the PLL phase noise (Figure of Merit), the integrated phase noise will improve by 1 dB (or equivalently, the jitter will improve by 11%). Hence, if the integrated noise floor is reduced by 8 dB, it is equivalent to a 40% reduction in jitter when using the same VCO at the same frequency. Precise Output Control In most instrumentation applications, it is critical to have very fine frequency step sizes and remain phase stable for long periods of time. Typical fractional-N PLLs, however, feature a limited fractional modulator,
FEATURE ARTICLE
which restricts the achievable frequency resolution: PLL Frequency Resolution = FPD/2(Bits of Fractional
www.mpdigest.com
Modulator)
A typical 20-bit fractional modulator running at 32 MHz provides a resolution of 30.5 Hz. The HMC984LP4E fractional modulator resolution is significantly tighter, with 48 bits. At 32 MHz rate, the HMC984LP4E achieves a small step size of 0.11 Hz. Even under worst case conditions at 125 MHz, the resolution is very tight at 0.44 Hz. A frequency error of 0.44 Hz requires almost one month for the phase to wander by one cycle. The HMC983LP5E/ HMC984LP4E PLL chipset
Figure 4: Block Diagram Featuring the HMC983LP5E/ HMC984LP4E Chipset with Hittite VCO and Ultra Low Noise Voltage Regulators solution includes a built-in sweeper feature (see Figure 3) to control the output frequency. This capability is critical in many applications, including spectrum analyzers, sweepers and FMCW radars. The sweep controller can generate a variety of frequency sweep types. Triggering can be used to single step sweeps, or initiate frequency or phase hops and make it easy to coordinate other functions inside the instrument or application. Hittite Microwaves design philosophy involves choosing the best semiconductor processes and design techniques available to provide customers with market-leading solutions. This philosophy allows the systems designer to maximize the true potential of the design and ultimately deliver a superior product. Figure 4 shows an example of how the HMC983LP5E/ HMC984LP4E PLL chipset solution can be combined with a number of additional Hittite catalog components to optimize a systems design. Summary The HMC983LP5E DC to 7 GHz Fractional-N Divider and Frequency Sweeper and the HMC984LP4E Digital PhaseFrequency Detector and Charge Pump form a high performance PLL chipset solution targeted at instrumentation and FMCW sweeper applications requiring superb jitter, phase noise and spurious performance. The high accuracy frequency control and advanced features, including flexible frequency sweep and phase control, make Hittites chipset an ideal solution for highly demanding applications such as ultra high performance test equipment and commercial radar. Partitioning the PLL building blocks into two distinct devices achieves superior isolation and results in market leading in-band spurious emissions performance that exceeds -65 dBc and can go as low as -100 dBc with high performance VCOs and tunable references. The HMC983LP5E/ HMC984LP4E PLL chipset can be combined with a number of different Hittite high performance catalog components to implement a wide range of market leading frequency synthesizer solutions. Both the HMC983LP5E and the HMC984LP4E are housed in plastic leadless surface mount packages and provide excellent performance stability over the full -40 C to 85 C operating range. Samples and evaluation boards for all SMT packaged products are available from stock and can be ordered via the Hittite Microwave e-commerce site or by a direct purchase order. Released data sheets are available online at www.hittite.com.
HITTITE MICrOWavE
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Model LVC440-495VS tunes 440MHz to 495MHz and is used in handheld wireless RF applications. A bias voltage of 1.5V delivers + 2.0dBm power with only 5ma current consumption. Phase noise is -94dBc @ 10kHz offset. Package size is 0.175 inch square with height of .075 inch. Supplied on T&R and priced @ $4.95 ea for 10k quantity.
Variable phase shifters Precision waveguide terminations High power waveguide terminations Waveguide to Coaxial Adapters Standard gain horn antennas
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Coming in JUNE 2011

Everyone who manufactures Signal Sources will want to be in this special supplement, dedicated solely to your market. Dont miss the opportunity to feature your company and its products in this standardsized, stand alone supplement! Signal Sources is part of our JUNE issue. Advertisers will receive a free full page of every standard page run or a half page at no additional charge for a paid half page ad. Dont miss being part of this special supplement Contact your nearest sales representative!
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Check these LAVI Mixer outstanding features!

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RoHS compliant U.S. Patent Number 6,807,407
COMPLIANT
o S

ISO 9001 ISO 14001 AS 9100
U.S. Patents 7739260, 7761442
451 Rev J
PAGE 62 APRIL 2012
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a dv Erti si n g r E p r E s E n tat i v E s
NY, NJ
385 Sylvan Avenue, Suite 16 Englewood Cliffs, NJ 07632 Phone (201) 569-5870 Fax (201) 569-6684 Doug Markhouse douglasmeow@aol.com P.O. Box 217 Hampton, NH 03843 Phone (603) 929-1541 Fax (603) 929-1542 Jerry Bleich jbleich@representative.com
Advertisers Index
Aeroflex / Inmet 58 Aeroflex / Weinschel 9, 44 Aethercomm 39 Agilent 21 Amcom 56 Anatech Electronics 4 Applied Radar 42 AWR 30 C.W. Swift 29 Ciao Wireless 53 CTS Valpey Corporation 11 dBm 26 Eclipse Microwave 36 EMI Filter 60 ESM Cable 57 Hittite 20, 44 Inrworx 60 IW 51 JFW 44 K&L Microwave 10 KR Electronics 60 Logus Microwave 50 Manz Communications 46 MECA 5 Microlab 15 Microwave Components 6 Mini-Circuits Cov.2, 16, 17, 23, 25, 27, 32, 33, 45, 47, 49, 55, 61, Cov.3, Cov.4 MITEQ 41 Modco Inc. 60 Narda 12 Planar Monolithics 7, 44 Pulsar 52 Pure Gas 42 R&D Microwaves 59 RFMD 13 RFMW 44 RLC 31 SGMC 37 Skyworks 43 Wenteq Microwave Corp. 60 Werlatone 35 Z-Communications 19
This index is provided as an additional service. The publisher does not assume any liability for errors or omissions.
southeast
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385 Sylvan Avenue, Suite 16, Englewood Cliffs, New Jersey 07632 (201) 569-5870 Fax: (201) 569-6684
Look Whats Happening at IMS2012!

Plenary Session Speaker: Steve Mollenkopf
President and Chief Operating Officer, Qualcomm 3G/4G Chipsets and the Mobile Data Explosion
Monday, 18 June 2012 1730-1900
The rapid growth of wireless data and complexity of 3G and 4G chipsets drives new design and deployment challenges for radio and device manufacturers along with carriers. This talk will provide a perspective on the problem from the point of view of a large, worldwide manufacturer of semiconductors and technology for cellular and connected consumer electronics devices. The increase in device and network complexity will result in significant business opportunities for the industry.
Closing Ceremony Speaker: Thomas H. Lee

Professor, Stanford University The Fourth Age of Wireless and the Internet of Everything
Thursday, 21 June 2012 1700-1830
Making predictions is hard, particularly about the future. The patterns of history are rarely discernible until theyre obvious and perhaps irrelevant. Wireless may be an exception, at least in broad outline, for the evolution of wireless has been following a clear pattern that tempts us to extrapolate. Marconis station-to-station spark telegraphy gave way to a second age dominated by station-to-people broadcasting, and then to todays ubiquitous people-to-people cellular communications. Each new age was marked by vast increases in value as it enlarged the circle of interlocutors. Now, these three ages have covered all combinations of stations and people, so any Fourth Age will have to invite things into the mix to provide another stepwise jump in the number of interlocutors. This talk will describe how the inclusion of multiple billions of objects, coupled with a seemingly insatiable demand for ever-higher data rates, will stress an infrastructure built for the Third Age. Overcoming the challenges of the coming Fourth Age of Wireless to create the Internet of Everything represents a huge opportunity for RF engineers. History is not done.
The IMS2012 Housing Bureau and Registration are now open!

Visit http://ims2012.mtt.org for complete details and to download your Program Book. Review technical sessions, workshop descriptions and exhibiting companies so you can make the most of your time at Microwave Week!
Dont miss your chance to see the latest RF/Microwave technology advancements while accessing over 500 companies technologies and services.
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ISO 9001
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U.S. Patents 7739260, 7761442
478 rev G

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23rd

Volume 57, issue 4 www.mpdigest.com

GVA GVA -83+ -63 +

+20 dBm Power Amplifiers with a choice of gain

*Low frequency cut-off determined by coupling cap,

except for GVA-62+ and GVA-63+ low cutoff at 10 MHz.

U.S. Patents 7739260, 7761442

IF/RF MICROWAVE COMPONENTS

APRIL 2012 PAGE 3

The Lessons of LightSquared

editorial statement of purpose

Keeping the Right Perspective on Timing

Harvey Kaylie, mini-circuits Jerry d. Neal, RFmd Robert pinato, iccs

PAGE 4 APRIL 2012

rohde & schwarz

Multiple bands, multiple radios, one antenna:

Anatech Electronics makes it easier

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PAGE 6 APRIL 2012

networks international corp.

texas instruments (ti)

PAGE 8 APRIL 2012

Theory and Application of RF/Microwave Absorbers

With magnetic loss tangent defined as

Innovative Design Solutions for Performance-Driven Applications

Call 800-638-2048 weinschel-sales@aeroflex.com www.aeroflex.com/weinschel

PAGE 12 APRIL 2012

sri hermetics, inc.

Integrated Microwave Assemblies

Time to pack it in.

Engineering, without compromise since 1954.

High Power Front End Modules and Power Amplifiers

Freq Range (Min) (MHz) 2400 2400 2400 2400

Freq Range (Max) (MHz) 2500 2500 2500 2500

POUT (dBm) 27.0 25.0 25.5 27.5

EVM (%) 2.5 2.5 2.5 2.5

Gain (dB) 35.0 33.0 33.0 35.0

VCC (V) 5.0 5.0 5.0 5.0

ICC (mA) 900 420 420 900

Package Laminate Module Laminate Module Laminate Module Laminate Module

Part Number RF5605 RFFM4200 RFFM4201 RFFM4202

Note: Rated power measured at antenna port at front end module

RFMD is a trademark of RFMD, LLC. 2012 RFMD.

PAGE 14 APRIL 2012

The Most Important Piece of your DAS System...

Microlab Certified Products.

each ( qty. 1000)

U.S. Patents 7739260, 7761442

IF/RF MICROWAVE COMPONENTS

ISO 14001 AS 9100

U.S. Patents 7739260, 7761442

IF/RF MICROWAVE COMPONENTS

PAGE 18 APRIL 2012

Just Under the Radar

ISO 9001:2008 Certified