GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402

SFH 400

SFH 401

SFH 402

Wesentliche Merkmale Hergestellt im Schmelzepitaxieverfahren Kathode galvanisch mit dem Gehuseboden verbunden Hohe Zuverlssigkeit Gute spektrale Anpassung an Si-Fotoempfnger Hermetisch dichtes Metallgehuse SFH 400: Gehusegleich mit SFH 216 SFH 401: Gehusegleich mit BPX 43, BPY 62 SFH 402: Gehusegleich mit BPX 38, BPX 65 Anwendungen Lichtschranken fr Gleich- und Wechsellichtbetrieb IR-Gertefernsteuerungen Sensorik Lichtgitter Typ Type SFH 400 SFH 400-3 SFH 401 SFH 401-3 SFH 402 SFH 402-3
2001-02-22

Features Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Matches all Si-Photodetectors Hermetically sealed package SFH 400: Same package as SFH 216 SFH 401: Same package as BPX 43, BPY 62 SFH 402: Same package as BPX 38, BPX 65

Applications Photointerrupters IR remote control of various equipment Sensor technology Light-grille barrier

Bestellnummer Ordering Code Q62702-P96 Q62702-P784 Q62702-P97 Q62702-P787 Q62702-P98 Q62702-P790

1

Gehuse Package 18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch dichtes Gehuse, Anschlsse im 2.54-mm-Raster (1/10) 18 A3 DIN 41876 (TO-18) glass lens, hermetically sealed package, solder tabs lead spacing 2.54 mm (1/10)

SFH 400, SFH 401, SFH 402

Grenzwerte (TC = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400, SFH 402 Betriebs- und Lagertemperatur Operating and storage temperature range SFH 401 Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Wrmewiderstand Thermal resistance Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlnge der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle SFH 400 SFH 401 SFH 402 Aktive Chipflche Active chip area Symbol Symbol peak Wert Value 950 Einheit Unit nm Symbol Symbol Wert Value 40 + 125 Einheit Unit C

Top; Tstg

Top; Tstg

40 + 100

VR IF IFSM Ptot RthJA RthJC

5 300 3 470 450 160

V mA A mW K/W K/W

55

nm

6 15 40 0.25

Grad deg. mm2

2001-02-22

SFH 400, SFH 401, SFH 402

Kennwerte (TA = 25 C) Characteristics (contd) Bezeichnung Parameter Abmessungen der aktiven Chipflche Dimensions of the active chip area Abstand Chipoberflche bis Linsenscheitel Distance chip front to lens top SFH 400 SFH 401 SFH 402 Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Kapazitt, Capacitance VR = 0 V, f = 1 MHz Durchlaspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1A, tp = 100 s Sperrstrom, Reverse current VR = 5 V Gesamtstrahlungsflu, Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA Symbol Symbol Wert Value 0.5 0.5 Einheit Unit mm

LB LW

H H H tr, tf

4.0 4.8 2.8 3.7 2.1 2.7 1

mm mm mm s

Co

40

pF

VF VF IR

1.30 ( 1.5) 1.90 ( 2.5) 0.01 ( 1)

V V A

mW

TCI

0.55

%/K

TCV TC

1.5 + 0.3

mV/K nm/K

2001-02-22

SFH 400, SFH 401, SFH 402

Gruppierung der Strahlstrke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Symbol SFH 400 Strahlstrke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstrke Radiant intensity IF = 1 A, tp = 100 s Ie min. Ie max. 20 SFH 400-3 > 32 SFH 401 > 10 Wert Value SFH 401-3 > 16 SFH 402 2.5 SFH 402-3 >4 mW/sr mW/sr Einheit Unit

Ie typ.

300

320

120

190

40

40

mW/sr

2001-02-22

SFH 400, SFH 401, SFH 402

Radiation Characteristics, SFH 400 rel = f ()
40 30 20

10

0 1.0

OHR01883

50 0.8 60

0.6

70

0.4

80 90

0.2 0

100

1.0

0.8

0.6

0.4

20

40

60

80

100

120

Radiation Characteristics, SFH 401 rel = f ()

40 30 20

10

0 1.0

OHR01884

50 0.8 60

0.6

70

0.4

80 90

0.2 0

100

1.0

0.8

0.6

0.4

20

40

60

80

100

120

Radiation Characteristics, SFH 402 rel = f ()

40 30 20

10

0 1.0

OHR01885

50 0.8 60

0.6

70

0.4

80 90

0.2 0

100

1.0

0.8

0.6

0.4

20

40

60

80

100

120

2001-02-22

SFH 400, SFH 401, SFH 402

Relative Spectral Emission Irel = f ()
100 % rel 80
OHRD1938

Radiant Intensity

e = f (IF ) e 100 mA
OHR01037

Single pulse, tp = 20 s
e
10 2

Max. Permissible Forward Current SFH 401, IF = f (TA)

350
OHR00486

e (100 mA)

F mA 300
250 200 150

10 1
60

R thJC = 160 K/W

40

10 0

R thJA = 450 K/W 100

20

50
10
920 960 1000 nm 1060
-1

0 880

10 -2

10 -1

10 0

A F

10 1

20

40

60

80 C 100 TA , TC

Forward Current

IF = f (VF)

Permissible Pulse Handling Capability IF = f (), TC = 25 C, RthJC = 160 K/W, duty cycle D = parameter
OHR01040

Max. Permissible Forward Current SFH 400, SFH 402, IF = f (T A )

350
OHR00395

10 1 A

10 4 mA 5 D=

OHR01937

tP tP T

F
T D= 0.005 0.01 0.02 0.05 0.1

F mA 300
250 200 150 R thJA = 450 K/W 100 50

10 0

typ.

max.

R thJC = 160 K/W

10 3 5

0.2 0.5

10 -1

DC

10 -2

1.5

2.5

3.5

4 V 4.5 VF

10 2 10 -5

10 -4

10 -3

10 -2

10 0

20

40

60

80

100 C 130 TA , TC

2001-02-22

SFH 400, SFH 401, SFH 402

Mazeichnung Package Outlines
SFH 400

Cathode (SFH 480) Anode (SFH 216, SFH 400) Chip position 2.7 (0.106)
2.54 (0.100) spacing

Radiant Sensitive area

3) .04 35) (0 .0 1.1 .9 (0 0

0.45 (0.018)

4.8 (0.189) 4.6 (0.181)

5.3 (0.209) 5.0 (0.197)

14.5 (0.571) 12.5 (0.492) 7.4 (0.291) 6.6 (0.260)

SFH 401

.04

(2.7 (0.106)) Chip position

3)

4.8 (0.189) 4.6 (0.181)

0.45 (0.018)

Anode = SFH 481 Cathode = SFH 401 (package)

(0

1.1

2.54 (0.100) spacing

welded 5.3 (0.209) 5.0 (0.197) 14.5 (0.571) 12.5 (0.492)

glass lens 6.4 (0.252) 5.6 (0.220)

0.9

(0

.03

5)

5.6 (0.220) 5.3 (0.209)

GETY6091

SFH 402

0.45 (0.018)

0.9

(0 .0

1.1

Chip position

4.8 (0.189) 4.6 (0.181)

35

(0

(2.7 (0.106))

Radiant sensitive area

.04

5.5 (0.217) 5.0 (0.197)

3)

5.6 (0.220) 5.3 (0.209)

GEOY6314

1. 0.9 1 (0 (0 .043 .03 ) 5)

14.5 (0.571) 12.5 (0.492) Cathode (SFH 402, BPX 65) Anode (SFH 482)

5.3 (0.209) 5.0 (0.197)

5.6 (0.220) 5.3 (0.209)

GETY6013

Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

2001-02-22

2.54 (0.100) spacing

1.1 (0 .04 3)
1.1 3) .04 (0 035) . (0 0.9

0.9 (0

.03

5)

SFH 400, SFH 401, SFH 402

Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 8