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New Product

SUP90N03-03
Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) 30 rDS(on) () 0.0029 at VGS = 10 V 0.0033 at VGS = 4.5 V ID (A)a, e 90 90 Qg (Typ) 82 nC

FEATURES
TrenchFET Power MOSFET 100 % Rg and UIS Tested

RoHS
COMPLIANT

APPLICATIONS
OR-ing Server DC/DC
D

TO-220AB

DRAIN connected to TAB

G D S Top View Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free)

S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted


Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 175 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IAS EAS IS ID Symbol VDS VGS Limit 30 20 90a, e 90e 28.8b, c 27b, c 90 36 64.8 90a, e 3.13b, c 187a 131 3.75b, c 2.63b, c - 55 to 175 C W V A A Unit V

THERMAL RESISTANCE RATINGS


Parameter Maximum Maximum Junction-to-Case Junction-to-Ambientb, d t 10 sec Steady State Symbol RthJA RthJC Typical 32 0.5 Maximum 40 0.6 Unit C/W

Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under Steady State conditions is 90 C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. Document Number: 74341 S-70303-Rev. A, 12-Feb-07 www.vishay.com 1

New Product

SUP90N03-03
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 20 A, di/dt = 100 A/s, TJ = 25 C IS = 22 A 0.8 52 70.2 27 25 TC = 25 C 90 90 1.2 78 105 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 0.67 ID 22.5 A, VGEN = 4.5 V, Rg = 1 VDD = 15 V, RL = 0.625 ID 24 A, VGEN = 10 V, Rg = 1 f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 28.8 A VDS = 15 V, VGS = 4.5 V, ID = 28.8 A VDS = 15 V, VGS = 0 V, f = 1 MHz 12065 1725 970 171 81.5 34 29 1.4 18 11 70 10 55 180 55 12 2.1 27 17 105 15 83 270 83 18 ns 257 123 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 28.8 A VGS = 4.5 V, ID = 27 A VDS = 15 V, ID = 28.8 A 90 0.0024 0.0027 160 0.0029 0.0033 1.5 30 35 - 7.5 2.5 100 1 10 V mV/C V nA A A S Symbol Test Conditions Min Typ Max Unit

Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 74341 S-70303-Rev. A, 12-Feb-07

New Product

SUP90N03-03
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
90 VGS = 10 V thru 4 V 75 2.4 I D - Drain Current (A) 3.0

I D - Drain Current (A)

60

1.8

45

1.2 TC = 25 C 0.6 TC = 125 C TC = - 55 C 0 1 2 3 4

30

15 VGS = 2 V 0 0.0 VGS = 3 V

0.0 0.5 1.0 1.5 2.0 2.5

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Output Characteristics
600 TC = 25 C 500 rDS(on) On-Resistance () G fs - Transconductance (S) TC = 125 C 0.0030 0.0032

Transfer Characteristics

VGS = 4.5 V 0.0028

400

300 TC = - 55 C

0.0026

VGS = 10 V

200

0.0024

100

0.0022

0 0 10 20 30 40 50 60 70 80 90

0.0020 0 15 30 45 60 75 90

ID - Drain Current (A)

ID - Drain Current (A)

Transconductance
15000 Ciss 10

rDS(on) vs. Drain Current

ID = 28.8 A V GS - Gate-to-Source Voltage (V) 8

VDS = 15 V

12000 C - Capacitance (pF)

VDS = 24 V 6

9000

6000 Coss 3000

0 0

Crss 6 12 18 24 30

0 0 30 60 90 120 150 180

VDS - Drain-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

Capacitance Document Number: 74341 S-70303-Rev. A, 12-Feb-07

Gate Charge www.vishay.com 3

New Product

SUP90N03-03
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1.6 VGS = 10 V, ID = 28.8 A VGS = 4.5 V, ID = 27 A rDS(on) - On-Resistance (Normalized) I S - Source Current (A) 1.4 100

10

1.2

1 T J = 150 C 0.1 T J = 25 C

1.0

0.8

0.01

0.6 - 50

- 25

25

50

75

100

125

150

175

0.001 0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V)

TJ - Junction Temperature (C)

On-Resistance vs. Junction Temperature


0.005 ID = 28.8 A rDS(on) - On-Resistance () 0.004 TA = 125 C V GS(th) Variance (V) 2.4 2.8

Forward Diode Voltage vs. Temperature

ID = 250 A 2.0

0.003 TA = 25 C 0.002

1.6

0.001

1.2

0.000 0 2 4 6 8 10

0.8 - 50 - 25

25

50

75

100

125 150

175

VGS - Gate-to-Source Voltage (V)

TJ - Temperature (C)

rDS(on) vs. VGS vs. Temperature


1000 *Limited by rDS (on) 100 I D - Drain Current (A)

Threshold Voltage

10

10 ms 100 ms

1s 10 s dc

0.1

0.01 TA = 25 C Single Pulse 0.001 0.1 *VGS 1 10 100

VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified

Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74341 S-70303-Rev. A, 12-Feb-07

New Product

SUP90N03-03
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
300 300

250 Power Dissipation (W)

250

ID - Drain Current (A)

200

200

150 Package Limited 100

150

100

50

50

0 0 25 50 75 100 125 150 175

0 0 25 50 75 100 125 150 175

TC - Case Temperature (C)

TC - Case Temperature (C)

Current Derating*

Power Derating

*The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

2 1 Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02 Single Pulse

0.01 10- 4

10- 3

10- 2

10- 1

10

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74341

Document Number: 74341 S-70303-Rev. A, 12-Feb-07

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Legal Disclaimer Notice


Vishay

Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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