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last few decades. In order to moderate short channel effects, the gate-oxide thickness and source/drain junction depth have been scaled along with the gate length. Recently, however, gate-oxide thickness scaling has slowed, as evidenced by the fact that an equivalent oxide thickness (EOT) of ~1 nm has been used for the past 2-3 generations of CMOS technology. Although significant progress has been made in the development of highpermittivity (high-) gate-dielectric materials and metal gate technology in recent years, it will be difficult to scale EOT well below 1 nm. This makes junction-depth scaling even more pressing for continued transistor scaling. Furthermore, as the dimensions of MOSFETs are scaled down, the contact resistance of silicide-to-source/drain regions increasingly limits transistor performance. This is because the on-state resistance of a MOSFET drops with transistor scaling, whereas contact resistance increases with contact area scaling. Contact resistance increases exponentially with Schottky barrier height (SBH) of the silicide-to-semiconductor contact. Thus, lower values of SBH will be needed in order to achieve substantial performance improvements with transistor scaling in the future Advantages Extremely small and lightweight, making them excellent replacements for metallic wires. Resources required to produce carbon nanotubes are plentiful, and many can be made with only a small amount of material. Are resistant to temperature changes, meaning they function almost just as well in extreme cold as they do in extreme heat. Have been in the R&D phase for a long time now, meaning most of the kinks have been worked out. As a new technology, investors have been piling into these R&D companies, which will boost the economy.
Also used in Bio-medical Applications, Textile industry, energy storage (solar cells of 70% efficiency )and electronic devices such as I-Pods etc.
Limitations 1. Manufacture: Important parameters are hard to control. 2. Large quantity fabrication process still missing. 3. Manipulation of nanotubes.