Beruflich Dokumente
Kultur Dokumente
h
h3SC-bhIHCu PC!IVC CC!IHCf
Andrei Blinov
1
, Volodymyr Ivakhn0
2
, Volodymyr Zamaruev
2
, Dmitri Vinnikov
l
, Oleksandr Husev
1
I
Tallinn University of Technology, Estonia;
2
National Technical University "Kharkiv Polytechnical Institute," Ukraine
andrei.blinov@ieee.org
b5lr0cl- The half-bridge converter with phase-shifed active
rectifer allows us to avoid drawbacks of the traditional hard
switched half-bridge converter with a diode rectifer, such as
high semiconductor losses and parasitic oscillations in the
inverter. This paper introduces a novel improved control
algorithm for a full-bridge phase-shifed active rectifer,
allowing reduction of the energy circulation during its operation.
The advantages of the algorithm are verifed with a small-scale
converter prototype. The experimental results were found in full
accordance with expected waveforms.
I. INTRODUCTION
Simple conventional converters based on a half-bridge
voltage-source inverter with flly controlled switches and
non-controlled diode rectifer can be used in high-voltage
applications such as railroad traction with contact grid voltage
of 2.2-.0 kV and output power of 10 . . . 50 kW that
implement high-voltage IGBT modules [1]. The advantages
of the converter are a small number of power components,
galvanic isolation of primar and secondary sides and
simplicity of the control algorithm.
Since the transistors in this conventional topology are hard
switched, in the case of high-voltage IGBTs the switching
losses could be rather high. That leads to a necessity to reduce
the switching fequency down to 1-2 kHz due to thermal
issues. With such relatively low conversion fequency the
passive components have signifcant dimensions and price.
Moreover, afer transistor tu-off the undesired parasitic
oscillations occur, caused by the presence of parasitic
capacitive and inductive circuit elements, mainly the IGBT
module capacitance and the transformer leakage inductance.
These drawbacks highlight the need to investigate how to
improve the performance of such topology, preferably
without signifcant increase in its complexity or reduction of
reliability.
Previously made investigations [2] revealed that among a
wide range of available options (dissipative snubbers, active
clamping, resonant topologies etc.) the topology with a phase
shifed active rectifer is one of the most promising
candidates.
This paper focuses on the analysis of this topology and its
frther optimization by introducing an improved control
algorithm, which improves the power factor of the converter.
The implementation of the algorithm is described and tested
on a small-scale experimental prototype.
II. PHASE-SHIFTED SYNCHRONOUS RECTIFIER
The phase-shifed synchronous rectifer concept is a well
known method to reduce the ringing, increase the efciency
and achieve ZVS (zero voltage switching) of converter
switches. The other advantages are relatively small
circulating energy and constant fequency operation, allowing
for simple control of the converter. Generally, these
converters comprise a half- or a fll-bridge inverter, a high
fequency transformer and a rectifer [3-4]. The rectifer par
could be classifed as [5]:
Full-bridge
Central-tapped
Current-doubler
The paper will investigate the feasibility of the half-bridge
topology with a fll-bridge phase-shifed synchronous
rectifer with reverse blocking switches (Fig. 1), as it requires
the least modifcations to the reference topology.
In this topology the inverter switches operate with a
constant duty cycle of 0.45 to avoid short-circuit and the
output voltage is controlled by the varying delay time
between the tu-on of the switches in the rectifer and the
tu-on of the IGBTs in the inverter. At the beginning of each
half-period, the transformer current will have the same
direction as in the previous one ad will only change it when
the other switch pair in the rectifer ts on. Therefore, at the
beginning of each half-period the curent will fow through
the feewheeling diode of the IGBT module to be tured on
next, allowing the ZVS of both inverter transistors. The
switching diagram is presented in Fig. 5. This switching
algorithm allows using non-dissipative capacitive snubbers in
the inverter and the inductive ones in the rectifer. Their role
is performed by the transformer leakage inductance [2].
':
+
|o
'|
aot
',
:53
Pu] /tmP
Fig. 2. Switching states of a conventional converter with a phase-shifed
active fll-bridge rectifer.
I
!!
|
!R
|\
5
1
,
5
3
_'- r -- -
! i
52,
5
3
5
1
,54
|
| 0
ii `
52
,
54
`
|our
to
3
|
!
Fig. 3. Modifed switching states of a converter with a phase-shifed active
fll-bridge rectifer.
|-
.
.
!8;
(b)
(c)
5
3
52
5
3
'-o
'o:
'/
-.:
C
C
~
C
C
~
52
"
C
'c:
O
-
5
3
(d)
'-o
O
C
~
{ransistcr)
---i
b
..... ... ....+..... . .
|
l(S1]
m
Z
.. .. . .. . 1 j |
0cut
0
0.00ZV 000ZVb 000J 000J0b 000J1
I|mejs)
Fig. 5. Operation modes of the converter with a modifed phase-shifed
active fll-bridge rectifer.
TABLE I
PARAMETERSL LOMPONENTSOfTHELXERlMENTAIPROTOTYE
FARAMETER bYMBOL VALIE!YPE
Input voltage, V ' 200 .. .400
Load voltage, V '..e 20
Switching fequency, kz
fs
10
Transformer turs ratio U 0.28
Inverter switch TT,TB IRGPS60B120KD
Rectifer switch SI-S4 IXFX 48N60P
Rectifer diode ON MBR40250
Output power, W .s 1000
/
11
'
. '
/
1U
b1
'
'
/
bZ
/
bd
|-:
/
- 4
1
Fig. 6. Practical implementation of the modifed switching diagram of a
converter with a controlled rectifer.
Uout
=
nU;n(1-4y-2D
.
) , (3)
where M is the transformer turs ratio.
To validate the proposed novel control algorithm for a half
bridge converter with a phase-shifed active rectifer, a small
scale prototype with the rated power of 1 kW was constructed
(Fig. 9). The main parameters are presented in Table I.
958
During the frst tests the converter was operating without
snubbers and the measured waveforms are presented in
Figs. 7-8. The duration of r is relatively high only for visual
purposes. As shown, the test results completely correspond to
estimated waveforms.
As mentioned, rectifer switches should have reverse
blocking capability. H the prototype MOSFETs with series
connected diodes were used. In the real system these switches
could be replaced by reverse-blocking IGBTs or fast
thyristors (the switches tum-off with ZCS) for reduced power
dissipation during the on-state.
The application of capacitive snubbers allows t-off
losses of the inverter IGBTs to be reduced. Since this loss
reduction has been reported to be lower than expected due to
increased tail curent duration, it should be experimentally
estimated for every paricular application [7-9].
Fig. 7. IGBT current, output voltage, load voltage and current of the
experimental converter prototype.
Fig. 8. IGBT voltage and current (top), SI MOSFET voltage and current
(bottom) of the experimental converter prototype.
Fig. 9. Photo of the experimental converter.
V. CONCLUSIONS
The introduced modifed control algorithm for the half
bridge converter with an active rectifer allows the ZVS of the
inverter switches and the ZCS of the rectifer switches. At the
same time the parasitic oscillations afer the tum-off of the
inverter IGBTs are completely avoided. The leakage
inductance of the transformer acts as the tum-on snubber for
rectifer transistors and tum-of losses of the inverter
transistors could be reduced using capacitive snubbers.
Unlike resonant converter solution, the proposed system
requires only minor modifcations to the basic circuit, does
not need any additional bulky passive components or a
complex fequency-control algorithm ad allows reduction in
the energy circulation during the operation.
The operation of the converter was verifed with the
experimental prototype and the test results were in fll
accordance with expected waveforms.
Focus in the frther reseach will be on the possibilities of
conduction loss reduction in the rectifer and estimation of the
overall converter efciency.
ACKOWLEDGEMENT
This research work has been supported by Estonia
Ministry of Education and Research (Project SF0140016s11),
Estonian Science Foundation (Grants ETF8538, ETF8687)
and Estonian Archimedes Foundation (project "Doctoral
School of Energy and Geotechnology II").
REFERENCES
[1] Jalakas, T.; Vinnikov, D.; Laugis, 1., "Development of 50-KW isolated
DCIDC converer with high-voltage IGBTS," Compatibility in Power
Electronics, 2007. CPE '07, pp. 1-6, May 29 - June 1,2007.
[2] Blinov, A, Vinnikov, D., Jalaas, T., "Study of performance
improvement methods for 6.5 KV IGBT based two-level half-bridge
converters," Power electronics ad energy efciency, Ukraine, voU,
pp. 56-62, 2011.
[3] Yingqi Zhag, Sen, P.c., "A new ZVS phase-shifed PWM DCIDC
converter with push-pull type synchronous rectifer," Electrical and
Computer Engineering, IEEE, voU, pp. 395 -398, 4-7 May 2003.
[4] Hong Mao, Abu-Qahouq, JA, Shiguo Luo, Batarseh, ., "Zero-voltage
switching (ZVS) two-stage approaches with output current sharing for
48v input DC-DC converter," Applied Power Electronics Conference
and Exposition, APEC '04. Nineteenth Annual IEEE; vol.2, pp. 1078-
1082,27 Sep. 2004
[5] Chiu, H.1., Lin, L.W., Mou, S.C., Chen, C.C., "A sof switched DCIDC
converter with current-doubler synchronous rectifcation," Power
Electronics ad Motion Control Conference, IPEMC 2004, Vol.2.,
pp. 526 -531,14-16 Aug. 2004.
[6] Moisseev, S., Soshin, K., Sato, S., Gamage, L., Nakaoka, M., "Novel
sof-commutation DC-DC power converter with high-fequency
transformer secondary side phase-shifed PWM active rectifer,"
Electric Power Applications, pp. 260 -267,8 May 2004.
[7] Dawidziuk, J., "Tum-of Sof-Switching Loss Model," Power
electronics ad energy efciency, Ukraine, voU, pp. 43-48, 2011.
[8]. Byeong-Mun Song; Huibin Zhu; Jih-Sheng Lai; Hefner, AR., Jr.;
"Switching characteristics of NPT - and PT -IGBTs under zero-voltage
switching conditions," Industry Applications Conference, Thirty-Fourth
lAS Annual Meeting. Conference Record of the 1999 IEEE ,voU,
pp.722-728 voU, 1999.
[9] Naayagi, R.T.; Shuttleworth, R.; Forsyth, A1.; "Investigating the efect
of snubber caacitor on high power IGBT tum-of," 1st Interational
Conference on Electrical Energy Systems (ICEES), 2011, pp.50-55,
Jan. 2011
959