2N3439 2N3440

MECHANICAL DATA Dimensions in mm (inches)

8.51 (0.34) 9.40 (0.37)

HIGH VOLTAGE NPN TRANSISTORS

FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR

7.75 (0.305) 8.51 (0.335)

6.10 (0.240) 6.60 (0.260)

12.70 (0.500) min.

0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

HIGH VOLTAGE

5.08 (0.200) typ.

APPLICATIONS:
2.54 (0.100)

2 1
0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)

These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

45

TO39 PACKAGE (TO-205AD)

Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector

ABSOLUTE MAXIMUM RATINGS(Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector Base Voltage (IE = 0) Collector Emitter Voltage (IB = 0) Emitter Base Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at Tcase 25C Tamb 50C Storage Temperature Junction Temperature

2N3439 450V 350V

2N3440 300V 250V

7V 1A 0.5A 5W 1W 65 to 200C 200C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 3066 Issue: 1

2N3439 2N3440

ELECTRICAL CHARACTERISTICS
Parameter
VCEO(sus)* ICEO ICEX ICBO IEBO VCE(sat)* VBE(sat)* Collector Emitter Sustaining Voltage (IB = 0) Collector Cut-off Current (IB = 0) Collector Cut-off Current (VBE = -1.5V) Collector Base Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

(Tcase = 25C unless otherwise stated)

Test Conditions
IC = 50mA IC = 50mA VCE = 300V VCE = 200V VCE = 450V VCE = 300V VCB = 350V VCB = 250V VEB = 6V IC = 50mA IC = 50mA IC = 20mA VCE = 10V IC = 2mA VCE = 10V 2N3439 only IB = 4mA IB = 4mA 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440

Min.
350 250

Typ.

Max. Unit
V 20 50 500 500 20 20 20 0.5 1.3 A A A A V V

40 30

160

hFE*

DC Current Gain

* Pulse test tp = 300s , 2%

DYNAMIC CHARACTERISTICS
Parameter
fT Cob hfe Transition Frequency Output Capacitance Small Signal Current Gain

(Tcase = 25C unless otherwise stated)

Test Conditions
IC = 10mA VCB = 10V IC = 5mA VCE = 10V VCE = 10V f = 5MHz f = 1MHz f = 1kHz

Min.
15

Typ.

Max. Unit
MHz 10 pF

25

THERMAL DATA
Parameter
RJA RJC Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case

Min.

Typ.

Max. Unit
175 35 C/W C/W

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 3066 Issue: 1