Thales components and technologies Ior T / R

Modules
Y Mancuso
Thales Svstemes Aeroportes, 2 av. Gav-Lussac, 78851 Elancourt, France
33(0)1 34 81 91 27,
1
yves.mancuso@fr.thalesgroup.com


Abstract - This paper presents new developments and
perspectives in Phased Arrays Radars and Electronic Warfare
for the next generations of T/R modules (medium/long
term), in order to decrease the mass production cost, while
increasing the level of performance and reliability.
In terms of physical architecture, even if the brick one is
more current at mid-term, the tile concept is investigated for
conformal and/or multifunction phased array antennas : a 3-
dimension module will lead to a drastic reduction of size and
weight of the antenna.
MMICs are always the key components, with evolutions
towards multifunction chips, new processes like GaN,SiGe,
MEMS power switches.
Concerning the packaging, a technological roadmap
indicates the different capabilities : thick film multilayer
ceramic circuits, co-fired ceramics based on LTCC or HTCC
processes, surface-mounted packages on printed circuits
boards,and 3D architectures.
The interconnection domain is also now more and more
important in order to be compatible with the level of
integration required for the microwave modules : fuzz
buttons, flex, sub-miniature connectors.
All these technologies mastered by Thales are dual for
Airborne and Space, Military and Civilian applications.

I. INTRODUCTION

Electronically Scanned Antenna introduces a
technological breakthrough in Airborne Radar. First the
beam agility makes search and tracking completely
independent, opens the way to new detection strategies and
improves dramatically the tactical situation acquisition. It
enables also simultaneous mode implementation. By
suppressing the mechanical parts, it increases the reliability
and makes easier the platIorm installation. Active
Electronically Scanned Antenna (AESA) oIIers even more
potentialities with an improved power budget thanks to loss
reduction and beam-shaping capabilities, which enables to
adapt the radiating pattern to the environment.
Recently, Active ESA solutions are being developed in X
band Iighter radars (F22, RaIale ,.) or lower S and L band
AEW radars. Large amount oI Iundings are being spent in
these technologies.
The cost reduction oI the current AESA is the main
concern Ior these developments. Mid-term and long-term
solutions at components, modules, packaging, global
architecture level will be discussed.














Fig. 1. Example oI X band Active ESA :
RBE2 Ior RaIale

AESA have an intrinsically wide bandwidth and high
gain and using them Ior the beneIit oI diIIerent sensors oI
an aircraIt is a way to cut the global cost oI a system.
Moreover the lack oI room where to place the diIIerent
antennas and the need to have a 4 steradian coverage is
an even stronger driver to share the Iront end oI the sensors.
It imposes new technologies like tile modules to reduce
their thickness and in some cases conIormal antennas to
match to the platIorm shape.
Considering the very diIIerent requirements and
constraints Ior transmission and reception, it will be
beneIicial to separate (when possible) the transmit antenna
Irom the receive antenna. Ultimately, in Network Centric
operation concept and Ior covert operation transmission and
reception, Iunctions will be distributed on diIIerent
platIorms changing the requirements and the architectures
oI the involved antennas.

II. ON GOING DEVELOPMENTS IN X BAND AESA

The Ieasibility and manuIacturability oI an X band
Iighter radar AESA is no longer a technical issue, and has
been demonstrated in several development or programs,and
especially within the RaIale Ilights since 5 years. The
challenge is now more technological and industrial in order
to decrease the cost oI these antennas composed oI
thousands oI Transmit/Receive Modules (TRMs).
The antenna cost issue is illustrated by the average cost
distribution oI the main AESA radar parts :


Fig. 2. AESA cost Breakdowm

A. Components

MMICs / GaAs Cost

GaAs is generally known to be very expensive but Fig. 2
shows that the GaAs cost represents a relatively moderate
part oI the total cost (less than 25). This cost depends on
the GaAs market price (on which the radar designer has
almost no impact) and the total GaAs surIace used in the
TRM.
Reduction oI this surIace is based on the integration
density reached either by the technology or the design, Ior
example with multiIunctions chips or corechips.
HBT technology currently used Ior HPA MMICs allows
to optimize the required surIace by easily modulating the
base (low current) ,versus drain modulation (high current)
Ior PHEMT process. So the PAE (Power Added EIIiciency)
has to be considered at module level and not only at MMIC
level.
With the UMS HB20PX process ,the better state-oI-the-
art has been achieved providing in X band 10W with more
than 40 PAE.















Fig. 3. X band GaAs HBT 10 W 40 PAE HPA MMIC
(18mm2)


GaN developments

GaN semiconductors provide many potential advantages
Ior power microwave applications, Ior example increased
input power level capability. Modules used in radar
applications could beneIit oI this new technology in both
their Transmit and Receive path : power handling
capability oI GaN should allow the reception ampliIier to
Iace high power electromagnetic aggression.



































Fig. 4. First results Ior hybrid X band GaN LNAs
noise Iigures.


An example oI THALES / UMS result is an X-Band
MMIC HPA built in GaN microstrip technology, with an
average output power oI 40-50 W and a power added
eIIiciency oI 33-37. As a peak result Ior the transistors
used, a power density oI 7W/mm was reached Vd32V.


1 Stage LNA Noise Figure Vd=10V, Ids=28mA
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
2 4 6 8 10 12 14 16 18 20
GHz
dB
NF = 0.9dB
@ F=7.4GHz
TRMs
w/o MMICs
MMICs
Antenna
w/o TRMs
50%

0,5
0,6
0,7
0,8
0,9
1
1,1
1,2
1,3
1,4
1,5
1,6
1,7
1,8
1,9
2
2,1
2,2
2,3
2,4
2,5
8,6 8,8 9 9,2 9,4 9,6 9,8 10 10,2 10,4 10,6 10,8 11
Frequency (GHz)
N
F

(
d
B
)












Fig. 5. X band GaN MMIC HPA

Corechips

MultiIunction core chips integrates in a single chip all the
low power Iunctions (phase shiIter, gain control, switches,
ampliIiers) reducing the GaAs surIace needed and the
wiring cost .HereaIter is an example oI an Electronic
WarIare corechip.










Fig. 6. Wide band GaAs corechip

For longer term, the latest evolution oI SiGe technology
towards microwaves Irequencies could be a breakthrough
to cut the cost. Analogous to the realisation oI single-chip
television or radio Iront-end, the 'ultimate goal might here
be described as a 'single core chip Ior the T/R module.











Fig. 7. A GaAs multiIunction Ior an X-band TR module
and a Iirst demonstration
Ior a complete SiGe phase shiIter
including the controls.




MEMS

There is an increasing interest oI aerospace industry
towards MEMS devices, which already Iound several
applications in other sectors. The potential beneIits Irom
the use oI these devices are good electrical perIormances,
power savings, and small size. Silicon technology is used
Ior the development oI MEMS RF switches, especially
power switches in X band (10 W power handling).











Fig.8. Structure oI a power RF MEMS switch


B. Packaging And Modules
The way to connect the components, to protect them, to
distribute signals and power supplies, to evacuate calories
is a major contributor to the global cost.
The Iirst TRMs were pluggable units that could be
replaced individually Ior maintenance purpose. Considering
the intrinsic TRM reliability it appears that the connectors
dramatically increase the cost. and severely degrade the
global reliability. New designs use TRMs directly soldered
on planks which assemble tens oI them on a single printed
circuit board.
Ongoing developments tend to suppress the TRM
package and to connect all the RF components, the control
circuits, the power supplies on a MultiIunction Carrier
which includes all RF, low power signals and power
distribution. The radiating elements could also be
integrated in the board.
These low cost solutions are based on organic packages,
the RF and DC interIaces being realised through BGA or
lead Irame. The main advantage oI these organic packages
is to oIIer TCE matched compatibility with printed circuit
boards, which allows quite large packages.









2000 m x 2200 m 2000 m x 2200 m
Core chip surface 20 mm
(GaAs)
SiGe phase shifter













Fig.9. Examples oI a RF organic packages

To summarize, we can draw the Iollowing technological
roadmap indicating the diIIerent evolutions :
- thick Iilm multilayer ceramic circuits ;
- co-Iired ceramics based on LTCC or HTCC processes ;
- surIace-mounted packages on printed circuits boards
like organic or ceramic ;
- 3D module architectures with high density integration.

C. Signal Distribution
Today RF distribution is made with RF lines. RF optical
distribution is a promising technology Ior mid term.
For longer term, there is a strong need Ior more Ilexible
and eIIicient phased-array beam management, particularly
on the receiving end. This is calling Ior a more intelligent
technique to combine the signals oI diIIerent modules, and
pushes towards a digital beam Iorming type oI processing
using distributed Radar receivers.
Chip sets Ior communication products are orders oI
magnitude cheaper than Ior military transceivers. Without
doubt, the requirements based on the military needs and the
mass nature contribute part to this. However, the
combination oI RF electronics with digital control and
processing on a single Si die is a lesson that can be learnt
Irom the telecommunication world.
The 'single-chip-radar-receiver mentioned above will
open the path to the Digital TRM concept and the Iull
beam Iorming which will solve the RF distribution
problems.

III. SHARING THE RESOURCES

Sharing the resources (the antennas) between the
diIIerent sensors oI an aircraIt is a way to cut the global
cost oI the system. But the lack oI room where to place
these antennas (the 'windows) is certainly a stronger
reason to share the Iront end oI the sensors.
Sharing the apertures, which is also a way to reduce the
aircraIt RCS, is then a new requirement Ior Iuture systems.
It will lead :
- to increase the AESA bandwidth (Irom some tens
percents to multi octave) ;
- to reduce the antenna thickness (to a Iew centimeters)
in order to be able to install easily these antennas on
the aircraIt body. In some case conIormal arrays will
be required.
New concepts such as 'tile TRM antenna are then being
developed, where the module Iootprint has to be compliant
with the radiating element size, that is to say about
10x10 mm Ior a wide band antenna (6-18 GHz). In order
to IulIil this requirement, a 3D module construction is
investigated.























Fig. 10. Examples oI a 3D architecture

This approach requires new technologies Ior the
manuIacturing oI the high integrated module sub-levels, the
internal interconnection between two sub-levels and the
external connection oI the T/R module. The module
includes diIIerent layers ; Ior example :
- a control ASIC chip,
- low level RF components (phase-shiIter, LNA,
attenuator .),
- RF power components (HPA, driver.).
The several RF levels are achieved on soIt substrates.
The power components are attached on a layer directly in
contact with the cooling system oI the antenna.
Interconnections between the RF layers are perIormed
using BGA, bumps or Fuzz buttons transitions. A
particular attention is given to the thermal aspects, due to
the CW operation, and the miniaturisation oI the
interconnections because oI the high integration.
BF
RF
Baluns
BF connector
Cooling plate
ASIC level
7.35
3.5 mm
Low level layer
Power layer
Routing layer
Low level layer
Power layer
Routing layer
Input layer
Distribution layer Distribution layer
Input layer
DiIIerent module architectures are investigated to realise
the assembly. They diIIer each other Irom technologies and
interconnections required to realise the T/R module.


IV. CONCLUSIONS

We have presented a survey oI the evolutions oI Airborne
Phased Array Radars. Current developments are mainly
Iocused on the cost reduction oI the X band Active
Electronically Scanned Antenna. Beyond the continuous
technologies improvements at the MMIC level (GaAs HBT,
GaN, SiGe, MEMS), several breakthroughs are Ioreseen at
mid or long term.
SurIace mounted packages on printed boards, organic
BGAs, plastic packages are mid term solutions preceding
longer term 3D architectures.
Signal distribution is another challenge where optical RF
is being developed beIore the implementation oI Iull digital
TRMs and generalized Digital Beam Forming.
Sharing the apertures on a platIorm (Radar, ESM/ECM,
Communications...) is a way to not only decrease the global
cost, but to extend the coverage oI the sensors and their
perIormances. It needs broadband antennas (up to multi-
octave) and low thickness antennas (Iew centimeters) in
order, iI required, to conIorm them on the platIorm Irame.
Tile TRM concept and 3D architectures are already in
labs.

V. ACKNOWLEDGMENT

The author thanks colleagues at THALES Ior various
technical contributions.
He also wish to acknowledge the French MoD Ior
supporting many actions.