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ACKNOWLEDGEMENT

At this moment of accomplishment, we are presenting our work with great pride and pleasure, we would like to express our sincere gratitude to all those who helped us in the successful completion of our venture. First of all, we would like to thank our Principal Prof. Suresh Kumar P who provided us with all facilities and amenities for the development of our projects. We would like to thank our HOD, Dr Mini M G for helping us in the successful accomplishment of our projects. We are exceedingly grateful to our project coordinator Assistant Professor, Mr. Vinu Thomas for his timely and valuable suggestions. We would also like to thank our project guide Senior Lecturer Mrs. Anjana Devi who gave us constant guidance and support throughout this journey of turbulence. We also sincerely thank Mr. Biju Mathew, Mrs. Geetha, Lab Technicians, department of Electronics and Communication for their constant support and encouragement for our project. We would also like to thank our parents and friends for their over whelming and whole hearted encouragement and support without which this would not have been successful. Above all we thank God almighty for constantly motivating us with his love, and giving us courage at each stride to step forward with confidence and selfbelief.

Working
A light emitting diode (LED) is known to be one of the best optoelectronic devices out of the lot. The device is capable of emitting a fairly narrow bandwidth of visible or invisible light when its internal diode junction attains a forward electric current or voltage. The visible lights that an LED emits are usually orange, red, yellow, or green. The invisible light includes the infrared light. The biggest advantage of this device is its high power to light conversion efficiency. That is, the efficiency is almost 50 times greater than a simple tungsten lamp. The response time of the LED is also known to be very fast in the range of 0.1 microseconds when compared with 100 milliseconds for a tungsten lamp. Due to these advantages, the device wide applications as visual indicators and as dancing light displays. We know that a P-N junction can connect the absorbed light energy into its potential electric current. The same process is reversed here. That is, the P-N junction emits light when energy is applied on it. This Phenomenon is generally called electro luminance, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward P-N junction as the electron cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the concustion band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some part of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

COMPONENT USE

A component is used for its resistance. In the past, most resistors were manufactured from carbon composition, a backed mixture of graphite and clay. These have been almost completely superseded by carbon or metal film resistor. Wire-wound resistors are used for comparatively low values of resistance where precise value is important, or for high dissipation. They are unsuitable for RF use because of their 4.2 Capacitor (C) A passive circuit component is a capacitance. A capacitor is formed from a pair of conducting surfaces separated by a layer of insulator. A capacitor made form a pair of parallel conducting plates of area S separated by a distance D, with the gap between the plates filled by a dielectric of relative permittivity E, will have a capacitance C given by C = dSEEor Where EO is the permittivity of free space reactance. 4.3 Diode Diode can be made of either two or semiconductor materials, silicon and germanium. Power diodes are usually constructed using silicon and germanium. Silicon diode can operate at higher current and at higher junction temperature, and they have greater reverse resistance. The structure of a semiconductor diode and it symbol are shown in Figure. The diode has two terminals, an anode, A terminal (P junction ) and a cathode K terminal (N junction). When the anode voltage is more positive than the cathode, the diode is said to be forward biased and it conducts currently readily with a relatively low voltage drop. When the cathode voltage is more positive than the anode, the diode is said to be reverse biased, and it blocks current flow. The arrow on the diode symbol shows the direction of convection current flow when the diode conducts.

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