2SK3371

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV)

2SK3371
Switching Regulator Applications
5.2 0.2 1.5 0.2 6.5 0. 2

Unit: mm
0.6 MAX.

Features
Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
1.2 MAX.

5.5 0.2

9.5 0.3

1.1 0.2 0.6 MAX.

0.8 MAX. 2.3 0.2

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 1 2 20 56 1 2 150 55 to 150 Unit V V V A W mJ A mJ C C

0.6 0.15 1 2

1.05 MAX. 3

2.3 0. 15 2.3 0.15 1. GATE 2. DRAIN HEAT SINK 3. SOURSE

0.1 0.1

2 1

Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C, L = 100 mH, IAR = 1 A, RG = 25 Note 3: Repetitive rating: pulse width limited by max channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

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2SK3371
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (Miller) charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 1 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V ID = 0.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 30 600 2.0 0.4 Typ. 6.4 0.85 190 15 55 12 55 40 90 9 3.5 5.5 Max 10 100 4.0 9.0 pF Unit A V A V V S

50 RL = 600

ns

VGS 0V

VDD 300 V

nC

Duty 1%, tw = 10 s

Source-Drain Diode Ratings and Characteristics (Ta = 25C)

Characteristic Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 400 1.4 Max 1 2 1.7 Unit A A V ns C

Marking
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive Note 4 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

K3371

Part No. (or abbreviation code) Lot No.

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2SK3371

ID VDS
1.0 Common source 0.8 Tc = 25C Pulse test 8 10 6 2.0 5 1.6 10

ID VDS
6 8 5.5 5.25 1.2 Common source Tc = 25C Pulse test

Drain current ID (A)

0.6 4.5 0.4 4.25 0.2 4 VGS = 3.75 V 0 0 2 4 6 8 10

Drain current ID (A)

4.75

0.8

4.75 4.5

0.4

4.25 VGS = 4 V 10 20 30 40 50

0 0

Drain-source voltage

VDS (V)

Drain-source voltage

VDS (V)

ID VGS
2.0 Tc = 55C 1.6 25 20

VDS VGS
Common source

VDS (V)

16

Tc = 25C Pulse test

Drain current ID (A)

100 1.2

Drain-source voltage

12

0.8

ID = 1 A

0.4

Common source VDS = 20 V Pulse test

0.5 0.25

0 0

10

0 0

12

16

20

Gate-source voltage

VGS (V)

Gate-source voltage

VGS (V)

Yfs ID
3 30

RDS (ON) ID

Forward transfer admittance Yfs (S)

Tc = 55C 1

25 100

Drain-source ON-resistance RDS (ON) ()

10

VGS = 10 V

0.5 0.3 Common source VDS = 20 V Pulse test 0.1 0.03 0.05 0.1 0.3 0.5 1 3

5 3 Common source Tc = 25C Pulse test 1 0.03 0.05 0.1

0.3

0.5

Drain current ID (A)

Drain current ID (A)

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2SK3371

RDS (ON) Tc
()
20 Common source 16 VGS = 10 V Pulse test ID = 1 A 10 5 Common source Tc = 25C Pulse test

IDR VDS

Drain-source ON-resistance RDS (ON)

0.5

Drain reverse current IDR

(A)

0.25 12

1 0.5 0.3

0.1 0.05 0.03 10 3 1 0.6 VGS = 0 V, 1 V 0.8 1.0 1.2

0 80

40

40

80

120

160

0.01 0

0.2

0.4

Case temperature Tc (C)

Drain-source voltage

VDS (V)

Capacitance VDS
500 300 Ciss 5

Vth Tc

Vth (V) Gate threshold voltage

(pF)

100 50 30 Coss 10 5 Common source 3 VGS = 0 V f = 1 MHz 1 0.1 Tc = 25C 0.3 0.5 1 3 5 10 30 50 100 Crss

Capacitance C

2 Common source 1 VDS = 10 V ID = 1 mA Pulse test 0 80 40 0 40 80 120 160

Drain-source voltage

VDS (V)

Case temperature Tc (C)

PD Tc
50 500

Dynamic input/output characteristics

20 Common source

Drain power dissipation PD (W)

VDS (V)

40

400

Tc = 25C 100 Pulse test

16

Drain-source voltage

200 200 VDD = 400 V

20

10

100

VGS

0 0

40

80

120

160

200

0 0

12

16

0 20

Case temperature Tc (C)

Total gate charge Qg (nC)

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Gate-source voltage

30

300

12

VGS (V)

VDS

ID = 1 A

2SK3371

rth tw
10

Normalized transient thermal impedance rth (t)/Rth (ch-c)

1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Duty = t/T Rth (ch-c) = 6.25C/W 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Single pulse

Pulse width

tw

(s)

Safe operating area

10 100

EAS Tch

Avalanche energy EAS (mJ)

ID max (pulsed) *

80

(A)

ID max (continuous)

100 s * 1 ms *

60

Drain current ID

DC Tc = 25C 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 VDSS max 10 100 1000

40

20

0 25

50

75

100

125

150

Channel temperature (initial) Tch (C)

Drain-source voltage

VDS (V)

15 V 15 V

BVDSS IAR VDD VDS Waveform

Test circuit RG = 25 VDD = 90 V, L = 100 mH

AS =

1 B VDSS L I2 B 2 VDD VDSS

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RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively TOSHIBA), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively Product) without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBAs written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Products quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (Unintended Use). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.

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