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Welcome to Lecture 3
Introduction
CMOS Complimentary Metal Oxide Silicon Technology Constructing Circuits using CMOS Technology Complementary use of both polarity devices on the same substrate Low power dissipation
MOS Transistors
Silicon a semiconductor, forms the starting material MOS (Metal Oxide Silicon) structure created by superimposing several layers of conducting, insulating, and transistor forming materials
MOS Construction
Chemical processing steps
Oxidation of silicon Diffusion of impurities to give it certain conduction characteristics (doping) Etching of aluminum for interconnection
For conduction, free charge carrying bodies like electron/holes to be available and is caused by doping If electrons carry charge (n-type/nMOS) and holes carry charge (p-type/pMOS)
MOS Layers
After Fabrication the MOS structure would have distinct layers
Diffusion (doped silicon) Polysilicon Aluminum
P-type Device
N-type Device
Working of transistors
N-type: If gate is 0 the source is disconnected from the drain and if gate is 1, source is connected to the drain P-type: If gate is 0 the source is connected to the drain and if gate is 1, source is disconnected from the drain.
Transistor Structure
It works like a switch. Depends on the voltage applied at the Gate Gate is a conducting material polysilicon The insulator is silicon dioxide N-type 0 on Gate makes it open and 1 closes P-type 1 on Gate makes it open and 0 closes open state is a high impedance state
Signal Strengths
The signal may have varying strengths classified as weak 0 and strong 0, weak 1 and strong 1 The transistors output strength depends upon the type of input and the type of transistor. Desirable to always have strong signals
Transmission Switch
The Inverter
Logic Switches
References
Samir Palnitkar, Verilog HDL, Pearson Education, Chapter 1. Neil H.E. Weste and Kamran Eshraghian, Principles of CMOS VLSI DESIGN A Systems Perspective, Second edition, Addison Wesley, Chapter 1. Thank You