MARIO CHAPARRO- HOOSMAN MONROY

POWER ELECTRONICS

LAB REPORT UJT

Abstract-In this lab, we perform a typical installation of a junction transistor UJT joined, resistors, capacitor and power supply were calculated previously, although the development of practice, we had to make some changes in resistance and the capacitor, for more accurate results.

C. Saturation region. Esta area is similar to the active region of a thyristor with a maintenance currents and voltages (valley point) and a linear very low resistance between the voltage and the emitter current. In this region, the emitter current is greater than the valley current (IE> IV). Failure to verify the conditions of the valley point, the UJT naturally enter the cutoff region.

INTRODUCTION The uni-junction transistor, consists of two regions with three external terminals, two base and an emitter, the emitter region (p) is heavily doped with impurities, the region is weakly ndoped, for this reason resistance between bases (RBB) is high. When not driving, the voltage drop can be expressed as follows: V1= R1/R1+R2 (VB2B1) A. Operation of a UJT The operation of a UJT is very similar to an SCR. The electrical characteristics of this device through the connection of the emitter voltage (VE) with the emitter current (IE). We define two critical points: point of peak or peak-point (VP, IP) and point-point valley or valley (VV, IV), both verify the condition of PVS / ck = 0. These points, in turn, defines three regions of operation: cutting region, and negative resistance region saturation region, as detailed below:Regin de corte. In this region, the emitter voltage is low so that the intrinsic tension keeps emitting diode reverse biased. The emitter current is very low and it is verified that VE <VP and IE <IP. This peak voltage in the UJT is defined by the following equation. Where the VF varies between 0.35 V to 0.7 V with a typical value of 0.5 V. For example, for the 2N2646 is 0.49V. The UJT in this region acts as a linear resistive element between the two bases of RBB value. VP= n VB2B1+ VF B. Negative resistance region. If the emitter voltage sufficient to bias the emitter diode, ie VE = VP then enters the diode conduction sharply reducing the resistance R1 due to recombination processes. From the issuer, is seen as the internal resistance decreases UJT with a behavior similar to that of a negative resistance (PVS / Die <0). In this region, the emitter current is between the peak current and valley (IP <IE <IV).

D. Application The mono-junction transistor (UJT) is generally used to generate trigger signals in the SCR. A UJT has three terminals, known as emitter E, Base1 and Base2 B1 B2. Between B1 and B2 is the mono-binding characteristics of an ordinary resistance (resistance between bases RBB having values in the range of 4.7 and 9.1 K). When applying the supply voltage Vs cd, the capacitor C is charged through the resistance R, as the UJT emitter circuit is in an open state. The time constant of the charging circuit is T1 = RC. When the emitter voltage VE, the same as the capacitor voltage reaches a peak value Vp, UJT is activated and the capacitor discharges through RB1 at a rate determined by the time constant T2 = RB1C. T2 is much less than T1. When the emitter voltage VE is reduced to the valley point of Vv, the transmitter turns off, UJT is deactivated and repeats the charging cycle. The trigger voltage VB1 be designed large enough to trigger the SCR. The oscillation period T, is completely independent of the supply voltage Vs and is given by: T = 1/f = RC ln 1/1-n

MARIO CHAPARRO- HOOSMAN MONROY E. PROCEEDINGS Relaxation oscillator. This circuit serves to generate signals for control of power devices as thyristors or triacs. The capacitor is charged up to the trigger voltage of the transistor UJT, this happens when this is discharged through the junction E-B1. The capacitor discharges until the voltage reaches a valley called (Vv) of approximately 2.5 volts. With this voltage UJT transistor turns off (stops driving between E and B1) and the capacitor begins loading again. If it is desired to vary the oscillation frequency can be changed so the capacitor C as the resistor R1. R2 and R3 are also important to find the oscillation frequency. For our practice we used a 2N4870 or 2N2646 UJT - Power supply of 20 V. - Frequency of about 500 Hz f = 1 / RC ln (1/1 - ). - Resistance R2R2= 0,7 RBB / V R2= 470 - The capacitor can be raised by any tension. - The capacitor discharges until the voltage reaches a valley called (Vv) of approximately 2.5 V. - It is very important to know that R1 must have values that must be within acceptable limits for the circuit can oscillate. These values are obtained with the following formulas: Maximum R1 = (Vs - Vp) / Ip Minimum R1 = (Vs - Vv) / Iv- Vs = 10V - Vpk = manufacturer's specification - Ip = manufacturer's specification - Vv = manufacturer's specification - Capacitors: 0.1 Uf SIMULATION

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Saturation resistance RB1

Charging and discharging the capacitor RESULTS. When mounting with the estimates obtained earlier, oscillator showed no rectification at the appropriate output, and some tests were made in order to obtain a good result.

MARIO CHAPARRO- HOOSMAN MONROY

POWER ELECTRONICS

The above graph was obtained by varying the base resistors, RB1 = RB2 = 330 and 47, R = 20, the remaining components are left the same as had been working. We obtained a 17.86 Hz input frequency, Vrms 356mv, v 10.4 Vpp output frequency of 5.97Hz.

The above graph was obtained with a 0.1 uF capacitor, although we obtained a good sign in and out, we wanted to get a higher frequency. We obtained a frequency of 230.4Hz, v 3.68 Vrms, Vpp 5.4 V. The figure above shows the result of recalculating the base resistors, the input voltage and other components. We obtained a frequency of 350 Hz, with Vcc = 15 V, RBB = 7 K, R = 10 K, RB2 = 470K, RB2 = 470, C = 220 nF. CALCULATIONS IDEALS. Ve= 0.6 (Vbb (Rb1+Rb1)/Rbb+Rb1+Rb2 Rb1=100k Fr= 1/Tc 500Hz= 1/Tc 12=20(1-e-0.002/RC) 0.6-1=(1-e-0.002/R(0.1uF)) -0.4=(-e-0.002/0.1nF) 0.4=(-e-0.002/0.1nF) 0.91=(0.002/1nF) R=(0.002/0.91(1nf) R=2k

In this figure shows a sawtooth signal at a frequency of 1025Khz, Vrms 255mv, Vpp 640mv.

Rbb=10k Rbb= RB1+RB2= 10k 0.6=RB1/10k RB1=6k RB2=4k

F. CONCLUSIONS An additional fact that the manufacturer gives the current required is to be found between E and B1 for the UJT triggering = Ip.

MARIO CHAPARRO- HOOSMAN MONROY Through several attempts we could verify that the oscillator is not working properly, this is due to the value of the base resistance, as they must be almost precise in order to generate the pulses, this has to recalculate the values to reach the desired output. Another of the problems that had to face was the generation of short pulses at low frequency, because the charge on the capacitor is too slow, this capacity being great, making it impossible to be loaded quickly. To do this we need to verify the calculations of the capacitor and put one with proper TAO, it is often best done empirically and changes between different capacitors. Something to keep in mind, is the polarization of the transistor, as we can be wrong about assigning the issuer bases. If no signals are obtained transistor bases, maybe one is disconnected or the transistor is burned, sometimes it may be better to try another UJT.

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G. REFERENCES Analog Electronics I. Espluga Nelson. The transistor UJT uni-or union. 2004. Design and Integration of Mechatronic Automation. Alexis Andres Rodriguez Diaz. 2007