Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

TO-220 Plastic Package

2N5294, 2N5296, 2N5298

2N5294, 5296, 5298

NPN PLASTIC POWER TRANSISTORS

Medium Power Switching and Amplifier Applications

PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

1 2 3

B H

C E

DIM A B C D E F G H J K L M N O

MIN . 14.42 9.63 3.56

MAX.

1 2 N L

D G

J M

16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7

ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; IB = 0.05 A IC = 1 A; IB = 0.1 A IC = 1.5 A; IB = 0.15 A D.C. current gain IC = 0.5 A; V CE = 4 V IC = 1 A; VCE = 4 V IC = 1.5 A; V CE = 4 V V CBO V CEO IC P tot Tj V CEsat max. max. max. max. max. max. 5294 5296 5298 80 60 80 V 70 40 60 V 4.0 A 36 W 150 C 1.0 1.0 30 120 V V 1.0 V 20 80

All diminsions in mm.

hFE hFE* hFE*

min. 30 max. 120 min. max. min. max.

Continental Device India Limited

Data Sheet

Page 1 of 4

2N5294, 2N5296, 2N5298

RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Collector-emitter voltage (VBE = 1.5V) VCEV Collector-emitter voltage (RBE = 100) VCER Emitter-base voltage (open base) VEBO Collector current IC Base current IB Total power dissipation up to TC = 25C Ptot Derate above 25C Total power dissipation up to TA = 25C Ptot Derate above 25C Junction temperature Tj Storage temperature Tstg THERMAL RESISTANCE From junction to ambient From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current VCE = 65 V; VBE = 1.5 V VCE = 35 V; VBE = 1.5 V VCE = 65 V; VBE = 1.5 V; TC = 150C VCE = 35 V; VBE = 1.5 V; TC = 150C VCE = 50 V; RBE = 100 VCE = 50 V; RBE = 100 ; TC = 150C Emitter cut-off current IC = 0; VEB = 7 V IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 0.5 A; IB = 0.05 A IC = 1 A; IB = 0.1 A IC = 1.5 A; IB = 0.15 A Base-emitter on voltage IC = 0.5 A; VCE = 4 V IC = 1 A; VCE = 4 V IC = 1.5 A; VCE = 4 V Rth ja Rth jc

max. max. max. max. max. max. max. max. max. max. max. max.

5294 5296 5298 80 60 80 V 70 40 60 V 80 60 80 V 75 50 70 V 7.0 5.0 5.0 V 4.0 A 2.0 A 36 W 0.288 W / C 1.8 W 0.0144 W /C 150 C 65 to +150 C 70 3.5 C/ W C/ W

5294 5296 5298 ICEV ICEV ICEV ICEV ICER ICER IEBO IEBO VCEO(sus)* VCBO VEBO VCEsat* VCEsat* VCEsat* VBE(on)* VBE(on)* VBE(on)* max. max. max. max. max. max. max. max. min. min. min. max. max. max. max. max. max. 0.5 3.0 0.5 2.0 1.0 70 80 7 1.0 1.1 2.0 5.0 1.0 40 60 5 1.0 1.3 0.5 3.0 0.5 2.0 1.0 60 80 5 1.0 1.5 mA mA mA mA mA mA mA mA V V V V V V V V V

Continental Device India Limited

Data Sheet

Page 2 of 4

2N5294, 2N5296, 2N5298

5294 5296 5298 D.C. current gain IC = 0.5 A; V CE = 4 V IC = 1 A; VCE = 4 V IC = 1.5 A; V CE = 4 V hFE* hFE* hFE* min. 30 max. 120 min. max. min. max. 30 120 20 80

Transition frequency IC = 0.2 A; V CE = 4 V Switching time Turn on time V CC = 30 V; V CC = 30 V; V CC = 30 V; Turn off time V CC = 30 V; V CC = 30 V; V CC = 30 V;

fT

min.

0.8

0.8

0.8

MHz

IC = 0.5 A; IB1 = 0.05 A IC = 1 A; I B1 = 0.1 A IC = 1.5 A; IB1 = 0.15 A IC = 0.5 A; IB1 = 0.05 A IC = 1 A; I B2 = 0.1 A IC = 1.5 A; IB2 = 0.15 A

t on t on t on toff toff toff

max. max. max. max. max. max.

5 15

5 15

5 15

s s s s s s

* Pulsed pulse duration = 300 s; duty factor = 0.018.

Notes

Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.

Continental Device India Limited

C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
Continental Device India Limited Data Sheet Page 4 of 4

CDIL is a registered Trademark of